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High-Pressure Phase Diagram of NdFeAsO$_{0.9}$F$_{0.1}$: Disappearance of superconductivity on the verge of ferromagnetism from nd moments
Authors:
Mahmoud Abdel-Hafiez,
M. Mito,
K. Shibayama,
S. Takagi,
M. Ishizuka,
A. N. Vasiliev,
C. Krellner,
H. K. Mao
Abstract:
We investigated transport and magnetic properties of NdFeAsO$_{0.9}$F$_{0.1}$ single crystal under hydrostatic pressures up to 50\,GPa. The ambient pressure superconductivity at $T_{c} \sim$ 45.4\,K is fully suppressed at $P_{c} \sim$ 21 GPa. Upon further increase of the pressure, the ferromagnetism associated with the order of rare-earth subsystem is induced at the border of superconductivity. Ou…
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We investigated transport and magnetic properties of NdFeAsO$_{0.9}$F$_{0.1}$ single crystal under hydrostatic pressures up to 50\,GPa. The ambient pressure superconductivity at $T_{c} \sim$ 45.4\,K is fully suppressed at $P_{c} \sim$ 21 GPa. Upon further increase of the pressure, the ferromagnetism associated with the order of rare-earth subsystem is induced at the border of superconductivity. Our finding is supported by the hysteresis in the magnetization $M$($H$) loops and the strong increase in the field cooled data, $M$($T$), toward low temperatures. We also show that the temperature evolution of the electrical resistivity as a function of pressure is consistent with a crossover from a Fermi-liquid to non-Fermi-liquid to Fermi-liquid. These results give access to the high-pressure side of the superconducting phase diagram in 1111 type of materials.
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Submitted 20 July, 2018;
originally announced July 2018.
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High-pressure behavior of superconducting boron-doped diamond
Authors:
Mahmoud Abdel-Hafiez,
Dinesh Kumar,
R. Thiyagarajan,
Q. Zhang,
R. T. Howie,
K. Sethupathi,
O. Volkova,
A. Vasiliev,
W. Yang,
H. K. Mao,
M. S. Ramachandra Rao
Abstract:
This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3\,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30\,GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients and the grain boundary components u…
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This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3\,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30\,GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients and the grain boundary components undergo an irreversible phase change at 14\,GPa. We show that the blue shift in the pressure-dependent vibrational modes correlates with the negative pressure coefficient of $T_{c}$ in BDD. The analysis of x-ray diffraction data determines the equation of state of the BDD film, revealing a high bulk modulus of $B_{0}$=510$\pm$28\,GPa. The comparative analysis of high-pressure data clarified that the sp$^{2}$ carbons in the grain boundaries transform into hexagonal diamond.
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Submitted 22 September, 2017;
originally announced September 2017.
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Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3
Authors:
P. P. Kong,
F. Sun,
L. Y. Xing,
J. Zhu,
S. J. Zhang,
W. M. Li,
Q. Q. Liu,
X. C. Wang,
S. M. Feng,
X. H. Yu,
J. L. Zhu,
R. C. Yu,
W. G. Yang,
G. Y. Shen,
Y. S. Zhao,
R. Ahuja,
H. K. Mao,
C. Q. **
Abstract:
Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but further theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial stat…
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Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but further theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. Here, we report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. High pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.
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Submitted 17 November, 2014;
originally announced November 2014.
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Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure
Authors:
J. Zhu,
J. L. Zhang,
P. P. Kong,
S. J. Zhang,
X. H. Yu,
J. L. Zhu,
Q. Q. Liu,
X. Li,
R. C. Yu,
R. Ahuja,
W. G. Yang,
G. Y. Shen,
H. K. Mao,
H. M. Weng,
X. Dai,
Z. Fang,
Y. S. Zhao,
C. Q. **
Abstract:
Topological superconductivity is one of most fascinating properties of topological quantum matters that was theoretically proposed and can support Majorana Fermions at the edge state. Superconductivity was previously realized in a Cu-intercalated Bi2Se3 topological compound or a Bi2Te3 topological compound at high pressure. Here we report the discovery of superconductivity in the topological compo…
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Topological superconductivity is one of most fascinating properties of topological quantum matters that was theoretically proposed and can support Majorana Fermions at the edge state. Superconductivity was previously realized in a Cu-intercalated Bi2Se3 topological compound or a Bi2Te3 topological compound at high pressure. Here we report the discovery of superconductivity in the topological compound Sb2Te3 when pressure was applied. The crystal structure analysis results reveal that superconductivity at a low-pressure range occurs at the ambient phase. The Hall coefficient measurements indicate the change of p-type carriers at a low-pressure range within the ambient phase, into n-type at higher pressures, showing intimate relation to superconducting transition temperature. The first principle calculations based on experimental measurements of the crystal lattice show that Sb2Te3 retains its Dirac surface states within the low-pressure ambient phase where superconductivity was observed, which indicates a strong relationship between superconductivity and topology nature.
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Submitted 27 June, 2013;
originally announced June 2013.
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Superconductivity at 31 K in 111 type iron arsenide superconductor NaxFeAs induced by pressure
Authors:
S. J. Zhang,
X. C. Wang,
Q. Q. Liu,
Y. X. Lv,
X. H. Yu,
Z. J. Lin.,
Y. S. Zhao,
L. Wang,
Y. Ding,
H. K. Mao,
C. Q. **
Abstract:
The effect of pressure on superconductivity of 111 type NaxFeAs is investigated through temperature dependent electrical resistance measurement in a diamond anvil cell. The superconducting transition temperature (Tc) increases from 26 K to a maximum 31 K as the pressure increases from ambient to 3 GPa. Further increasing pressure suppresses Tc drastically. The behavior of pressure tuned Tc in Na…
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The effect of pressure on superconductivity of 111 type NaxFeAs is investigated through temperature dependent electrical resistance measurement in a diamond anvil cell. The superconducting transition temperature (Tc) increases from 26 K to a maximum 31 K as the pressure increases from ambient to 3 GPa. Further increasing pressure suppresses Tc drastically. The behavior of pressure tuned Tc in NaxFeAs is much different from that in LixFeAs, although they have the same Cu2Sb type structure
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Submitted 10 December, 2009;
originally announced December 2009.
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Layered Structures Favor Superconductivity in Compressed Solid SiH$_{4}$
Authors:
X. J. Chen,
J. L. Wang,
V. V. Struzhkin,
H. K. Mao,
R. J. Hemley,
H. Q. Lin
Abstract:
The electronic and lattice dynamical properties of compressed solid SiH$_{4}$ have been calculated in the pressure range up to 300 GPa with density functional theory. We find that structures having a layered network with eight-fold SiH$_{8}$ coordination favor metallization and superconductivity. SiH$_{4}$ in these layered structures is predicted to have superconducting transition temperatures r…
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The electronic and lattice dynamical properties of compressed solid SiH$_{4}$ have been calculated in the pressure range up to 300 GPa with density functional theory. We find that structures having a layered network with eight-fold SiH$_{8}$ coordination favor metallization and superconductivity. SiH$_{4}$ in these layered structures is predicted to have superconducting transition temperatures ranging from 20 to 80 K, thus presenting new possibilities for exploring high temperature superconductivity in this hydrogen-rich system.
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Submitted 18 March, 2008;
originally announced March 2008.
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Development and Application of a Diaphragm Micro-Pump with Piezoelectric Device
Authors:
H. K. Ma,
B. R. Hou,
H. Y. Wu,
C. Y. Lin,
J. J. Gao,
M. C. Kou
Abstract:
In this study, a new type of thin, compact, and light weighed diaphragm micro-pump has been successfully developed to actuate the liquid by the vibration of a diaphragm. The micro-diaphragm pump with two valves is fabricated in an aluminum case by using highly accurate CNC machine, and the cross-section dimension is 5mm x 8mm. Both valves and diaphragm are manufactured from PDMS. The amplitude o…
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In this study, a new type of thin, compact, and light weighed diaphragm micro-pump has been successfully developed to actuate the liquid by the vibration of a diaphragm. The micro-diaphragm pump with two valves is fabricated in an aluminum case by using highly accurate CNC machine, and the cross-section dimension is 5mm x 8mm. Both valves and diaphragm are manufactured from PDMS. The amplitude of vibration by a piezoelectric device produces an oscillating flow which may change the chamber volume by changing the curvature of a diaphragm. Several experimental set-ups for performance test in a single micro-diaphragm pump, isothermal flow open system, and a closed liquid cooling system is designed and implemented. The performance of one-side actuating micro-diaphragm pump is affected by the design of check valves, diaphragm, piezoelectric device, chamber volume, input voltage and frequency. The measured maximum flow rate of present design is 72 ml/min at zero total pump head in the range of operation frequency 70-180 Hz.
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Submitted 21 February, 2008;
originally announced February 2008.
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Melting of tantalum at high pressure determined by angle dispersive x-ray diffraction in a double-sided laser-heated diamond-anvil cell
Authors:
D. Errandonea,
M. Somayazulu,
D. Hausermann,
H. K. Mao
Abstract:
The high pressure and high temperature phase diagram of Ta has been studied in a laser-heated diamond-anvil cell (DAC) using x-ray diffraction measurements up to 52 GPa and 3800 K. The melting was observed at nine different pressures, being the melting temperature in good agreement with previous laser-heated DAC experiments, but in contradiction with several theoretical calculations and previous…
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The high pressure and high temperature phase diagram of Ta has been studied in a laser-heated diamond-anvil cell (DAC) using x-ray diffraction measurements up to 52 GPa and 3800 K. The melting was observed at nine different pressures, being the melting temperature in good agreement with previous laser-heated DAC experiments, but in contradiction with several theoretical calculations and previous piston-cylinder apparatus experiments. A small slope for the melting curve of Ta is estimated (dTm/dP = 24 K/GPa at 1 bar) and a possible explanation for this behaviour is given. Finally, a P-V-T equation of states is obtained, being the temperature dependence of the thermal expansion coefficient and the bulk modulus estimated.
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Submitted 13 October, 2003;
originally announced October 2003.
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Phonon-assisted electronic topological transition in MgB2 under pressure
Authors:
V. V. Struzhkin,
A. F. Goncharov,
R. J. Hemley,
H. K. Mao,
G. Lapertot,
S. L. Bud'ko,
P. C. Canfield
Abstract:
We report measurements of the superconducting critical temperature Tc of polycrystalline MgB2 samples containing isotopically pure (10)B and (11)B under quasi-hydrostatic pressure conditions in He pressure media up to 44 GPa. Measurements to volume compressions V/V_0 ~ 0.82 allow us to observe a kink in the volume dependence of Tc for Mg(10)B2 (at 20 GPa) and Mg(11)B2 (at 15 GPa). The pressure d…
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We report measurements of the superconducting critical temperature Tc of polycrystalline MgB2 samples containing isotopically pure (10)B and (11)B under quasi-hydrostatic pressure conditions in He pressure media up to 44 GPa. Measurements to volume compressions V/V_0 ~ 0.82 allow us to observe a kink in the volume dependence of Tc for Mg(10)B2 (at 20 GPa) and Mg(11)B2 (at 15 GPa). The pressure dependence of the E(2g) mode also changes abruptly around 20 GPa for the Mg(10)B2 sample. The anharmonic character of the E(2g) phonon mode and anomalies in Tc pressure dependence are interpreted as the result of a phonon-assisted Lifshitz electronic topological transition.
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Submitted 27 June, 2001;
originally announced June 2001.
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Pressure Dependence of the Raman Spectrum, Lattice Parameters and Superconducting Critical Temperature of MgB2
Authors:
A. F. Goncharov,
V. V. Struzhkin,
E. Gregoryanz,
H. K. Mao,
R. J. Hemley,
G. Lapertot,
S. L. Bud'ko,
P. C. Canfield,
I. I. Mazin
Abstract:
We have observed a strongly broadened Raman band of MgB2 that shows anomalously large pressure dependence of its frequency. This band and its pressure dependence can be interpreted as the E2g zone center phonon, which is strongly anharmonic because of coupling to electronic excitations. The pressure dependence of Tc was measured to 14 GPa in hydrostatic conditions and can be explained only when…
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We have observed a strongly broadened Raman band of MgB2 that shows anomalously large pressure dependence of its frequency. This band and its pressure dependence can be interpreted as the E2g zone center phonon, which is strongly anharmonic because of coupling to electronic excitations. The pressure dependence of Tc was measured to 14 GPa in hydrostatic conditions and can be explained only when a substantial pressure dependence of the Hopfield parameter h=N(0)<I2>~(V0/V)^2.3(6)is taken into account.
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Submitted 13 June, 2001;
originally announced June 2001.
