Showing 1–12 of 12 results for author: Manus, S

Characterization of Qubit Dephasing by Landau-Zener Interferometry

Authors: F. Forster, G. Petersen, S. Manus, P. Hänggi, D. Schuh, W. Wegscheider, S. Kohler, S. Ludwig

Abstract: Controlling coherent interaction at avoided crossings is at the heart of quantum information processing. The regime between sudden switches and adiabatic transitions is characterized by quantum superpositions that enable interference experiments. Here, we implement periodic passages at intermediate speed in a GaAs-based two-electron charge qubit and observe Landau-Zener-Stückelberg-Majorana (LZSM)… ▽ More Controlling coherent interaction at avoided crossings is at the heart of quantum information processing. The regime between sudden switches and adiabatic transitions is characterized by quantum superpositions that enable interference experiments. Here, we implement periodic passages at intermediate speed in a GaAs-based two-electron charge qubit and observe Landau-Zener-Stückelberg-Majorana (LZSM) quantum interference of the resulting superposition state. We demonstrate that LZSM interferometry is a viable and very general tool to not only study qubit properties but beyond to decipher decoherence caused by complex environmental influences. Our scheme is based on straightforward steady state experiments. The coherence time of our two-electron charge qubit is limited by electron-phonon interaction. It is much longer than previously reported for similar structures. △ Less

Submitted 24 September, 2013; v1 submitted 23 September, 2013; originally announced September 2013.

Comments: 21 pages, 15 figures

Journal ref: Phys. Rev. Lett. 112, 116803 (2014)

Microwave cavity-enhanced transduction for plug and play nanomechanics at room temperature

Authors: Thomas Faust, Peter Krenn, Stephan Manus, Jörg P. Kotthaus, Eva M. Weig

Abstract: Nanomechanical resonators with increasingly high quality factors are enabled following recent insights into energy storage and loss mechanisms in nanoelectromechanical systems (NEMS). Consequently, efficient, non-dissipative transduction schemes are required to avoid the dominating influence of coupling losses. We present an integrated NEMS transducer based on a microwave cavity dielectrically cou… ▽ More Nanomechanical resonators with increasingly high quality factors are enabled following recent insights into energy storage and loss mechanisms in nanoelectromechanical systems (NEMS). Consequently, efficient, non-dissipative transduction schemes are required to avoid the dominating influence of coupling losses. We present an integrated NEMS transducer based on a microwave cavity dielectrically coupled to an array of doubly-clamped pre-stressed silicon nitride beam resonators. This cavity-enhanced detection scheme allows resolving the resonators' Brownian motion at room temperature while preserving their high mechanical quality factor of 290,000 at 6.6 MHz. Furthermore, our approach constitutes an "opto"mechanical system in which backaction effects of the microwave field are employed to alter the effective dam** of the resonators. In particular, cavity-pumped self-oscillation yields a linewidth of only 5 Hz. Thereby, an adjustement-free, all-integrated and self-driven nanoelectromechanical resonator array interfaced by just two microwave connectors is realised, potentially useful for applications in sensing and signal processing. △ Less

Submitted 27 December, 2011; v1 submitted 6 September, 2011; originally announced September 2011.

Journal ref: Nat. Commun. 3:728 (2012)

Radio frequency pulsed-gate charge spectroscopy on coupled quantum dots

Authors: D. Harbusch, S. Manus, H. P. Tranitz, W. Wegscheider, S. Ludwig

Abstract: Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum point contact as detector. A key component of our setup is a sample holder optimized for broadband radio frequency applications. Our setup can detect displaceme… ▽ More Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum point contact as detector. A key component of our setup is a sample holder optimized for broadband radio frequency applications. Our setup can detect displacements of single electrons on time scales well below a nanosecond. Tunneling rates through individual barriers and relaxation times are obtained by using a rate equation model. We demonstrate the full characterization of a tunable double quantum dot using this technique, which could also be used for coherent charge qubit control. △ Less

Submitted 11 November, 2010; v1 submitted 29 June, 2010; originally announced June 2010.

Journal ref: Phys. Rev. B 82, 195310 (2010)

Spatially resolved ultrafast transport current in GaAs photoswitches

Authors: L. Prechtel, S. Manus, D. Schuh, W. Wegscheider, A. W. Holleitner

Abstract: We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is interpreted by a transport current. A time-of-flight analysis allows us to determine the velocity of the photogenerated charge carriers in the transport c… ▽ More We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is interpreted by a transport current. A time-of-flight analysis allows us to determine the velocity of the photogenerated charge carriers in the transport current. It exceeds the Fermi and the single-particle quantum velocities. This suggests that the excitation of a collective electron-hole plasma and not single charge-carriers dominates the ultrafast transport current in GaAs photoswitches. △ Less

Submitted 11 May, 2010; originally announced May 2010.

Comments: 10 pages, 3 figures

Long exciton spin memory in coupled quantum wells

Authors: Katarzyna Kowalik-Seidl, Xaver P. Vögele, Bernhard N. Rimpfl, Stephan Manus, Dieter Schuh, Werner Wegscheider, Alexander W. Holleitner, Jörg P. Kotthaus

Abstract: Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pum** laser pulse, de… ▽ More Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pum** laser pulse, demonstrating directly a very long relaxation time of exciton spin. The observed spin memory effect exceeds the radiative lifetime of the indirect excitons. △ Less

Submitted 16 July, 2010; v1 submitted 1 April, 2010; originally announced April 2010.

Comments: 4 pages, 2 figures

Journal ref: Appl. Phys. Lett. 97, 011104 (2010)

Photoconductive gain in semiconductor quantum wires

Authors: K. -D. Hof, C. Rossler, S. Manus, J. P. Kotthaus, A. W. Holleitner, D. Schuh, W. Wegscheider

Abstract: We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which sh… ▽ More We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the one-dimensional subbands of the quantum wire. Here we demonstrate that the effect persists up to a temperature of about 17 Kelvin. △ Less

Submitted 6 October, 2008; originally announced October 2008.

Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires

Authors: K. -D. Hof, C. Rossler, S. Manus, J. P. Kotthaus, A. W. Holleitner, D. Schuh, W. Wegscheider

Abstract: We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well whic… ▽ More We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The non-linear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes. △ Less

Submitted 6 June, 2008; originally announced June 2008.

Optically induced transport properties of freely suspended semiconductor submicron channels

Authors: C. Rossler, K. -D. Hof, S. Manus, S. Ludwig, J. P. Kotthaus, J. Simon, A. W. Holleitner, D. Schuh, W. Wegscheider

Abstract: We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a ti… ▽ More We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds. △ Less

Submitted 15 May, 2008; originally announced May 2008.

Journal ref: Appl. Phys. Lett. 93, 071107 (2008)

Optical detection of single electron spin resonance in a quantum dot

Authors: Martin Kroner, Kathrina M. Weiss, Benjamin Biedermann, Stefan Seidl, Stefan Manus, Alexander Holleitner, Antonio Badolato, Pierre M. Petroff, Brian D. Gerardot, Richard J. Warburton, Khaled Karrai

Abstract: We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pum** of the spin with a coherent laser. Contrast is restored by applying a radio frequency (rf) magnetic field at the spin resonance. The scheme is sensitive even to rf fields of just a few micro-T. In one case, the spin resonance behaves… ▽ More We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pum** of the spin with a coherent laser. Contrast is restored by applying a radio frequency (rf) magnetic field at the spin resonance. The scheme is sensitive even to rf fields of just a few micro-T. In one case, the spin resonance behaves exactly as a driven 3-level quantum system (a lambda-system) with weak dam**. In another, the dot exhibits remarkably strong (67% signal recovery) and narrow (0.34 MHz) spin resonances with fluctuating resonant positions, evidence of unusual dynamic processes of non-Markovian character. △ Less

Submitted 25 October, 2007; originally announced October 2007.

Comments: 4 pages, 5 figures

Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator

Authors: M. Shayegan, K. Karrai, Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, S. Manus

Abstract: We demonstrate the use of a piezoelectric actuator to apply, at low temperatures, uniaxial stress in the plane of a two-dimensional electron system confined to a modulation-doped AlAs quantum well. Via the application of stress, which can be tuned in situ and continuously, we control the energies and occupations of the conduction-band minima and the electronic properties of the electron system.… ▽ More We demonstrate the use of a piezoelectric actuator to apply, at low temperatures, uniaxial stress in the plane of a two-dimensional electron system confined to a modulation-doped AlAs quantum well. Via the application of stress, which can be tuned in situ and continuously, we control the energies and occupations of the conduction-band minima and the electronic properties of the electron system. We also report measurements of the longitudinal and transverse strain versus bias for the actuator at 300, 77, and 4.2 K. A pronounced hysteresis is observed at 300 and 77 K, while at 4.2 K, strain is nearly linear and shows very little hysteresis with the applied bias. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Comments: 2 figures

Journal ref: Applied Physics Letters, Vol. 83, No. 25, pp. 5235-5237, 22 December 2003

Nanomechanical resonators operating as charge detectors in the nonlinear regime

Authors: H. Kroemmer, A. Erbe, A. Tilke, S. Manus, R. H. Blick

Abstract: We present measurements on nanomechanical resonators machined from Silicon-on-Insulator substrates. The resonators are designed as freely suspended Au/Si beams of lengths on the order of 1 - 4 um and a thickness of 200 nm. The beams are driven into nonlinear response by an applied modulation at radio frequencies and a magnetic field in plane. The strong hysteresis of the magnetomotive response a… ▽ More We present measurements on nanomechanical resonators machined from Silicon-on-Insulator substrates. The resonators are designed as freely suspended Au/Si beams of lengths on the order of 1 - 4 um and a thickness of 200 nm. The beams are driven into nonlinear response by an applied modulation at radio frequencies and a magnetic field in plane. The strong hysteresis of the magnetomotive response allows sensitive charge detection by varying the electrostatic potential of a gate electrode. △ Less

Submitted 21 October, 1999; originally announced October 1999.

Comments: 8 pages, 6 figures

Parallel Quantum-Point-Contacts as High-Frequency-Mixers

Authors: A. G. C. Haubrich, D. A. Wharam, H. Kriegelstein, S. Manus, A. Lorke, A. C. Gossard, J. P. Kotthaus

Abstract: We present the results of high-frequency mixing experiments performed upon parallel quantum point-contacts defined in the two-dimensional electron gas of an Al_{x}Ga_{1-x}As/GaAs-heterostructure. The parallel geometry, fabricated using a novel double-resist technology, enables the point-contact device to be impedance matched over a wide frequency range and, in addition, increases the power level… ▽ More We present the results of high-frequency mixing experiments performed upon parallel quantum point-contacts defined in the two-dimensional electron gas of an Al_{x}Ga_{1-x}As/GaAs-heterostructure. The parallel geometry, fabricated using a novel double-resist technology, enables the point-contact device to be impedance matched over a wide frequency range and, in addition, increases the power levels of the mixing signal while simultaneously reducing the parasitic source-drain capacitance. Here, we consider two parallel quantum point-contact devices with 155 and 110 point-contacts respectively; both devices operated successfully at liquid helium and liquid nitrogen temperatures with a minimal conversion loss of 13 dB. △ Less

Submitted 2 June, 1997; v1 submitted 30 May, 1997; originally announced May 1997.

Comments: 4 figures, RevTeX, to be published in the 16 June 1997 issue of Applied Physic Letters