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Electric field control of RKKY coupling through solid-state ionics
Authors:
Maria Ameziane,
Roy Rosenkamp,
Lukáš Flajšman,
Sebastiaan van Dijken,
Rhodri Mansell
Abstract:
Placing a suitable spacer layer between two magnetic layers can lead to an interaction between the magnetic layers known as Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling. Controlling RKKY coupling, particularly the ability to switch between ferromagnetic and antiferromagnetic coupling, would enable novel magnetic data storage devices. By combining solid-state Li ion battery technology with an out-…
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Placing a suitable spacer layer between two magnetic layers can lead to an interaction between the magnetic layers known as Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling. Controlling RKKY coupling, particularly the ability to switch between ferromagnetic and antiferromagnetic coupling, would enable novel magnetic data storage devices. By combining solid-state Li ion battery technology with an out-of-plane magnetized Co/Pt-based stack coupled through a Ru interlayer we investigate the effects of the insertion of Li ions on the magnetic properties of the stack. The RKKY coupling and its voltage dependence is measured as a function of the Ru interlayer thickness, along with the effects of repeated voltage cycling. The Li ions both change the amplitude of the RKKY coupling and its phase, leading to the ability to switch the RKKY coupling between ferromagnetic and antiferromagnetic with applied voltages.
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Submitted 27 January, 2023;
originally announced January 2023.
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Solid-state lithium-ion supercapacitor for voltage control of skyrmions
Authors:
Maria Ameziane,
Joonatan Huhtasalo,
Lukáš Flajšman,
Rhodri Mansell,
Sebastiaan van Dijken
Abstract:
Ionic control of magnetism gives rise to high magneto-electric coupling efficiencies at low voltages, which is essential for low-power magnetism-based non-conventional computing technologies. However, for on-chip applications, magneto-ionic devices typically suffer from slow kinetics, poor cyclability, impractical liquid architectures or strong ambient effects. As a route to overcoming these probl…
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Ionic control of magnetism gives rise to high magneto-electric coupling efficiencies at low voltages, which is essential for low-power magnetism-based non-conventional computing technologies. However, for on-chip applications, magneto-ionic devices typically suffer from slow kinetics, poor cyclability, impractical liquid architectures or strong ambient effects. As a route to overcoming these problems, we demonstrate an LiPON-based solid-state ionic supercapacitor with a magnetic Pt/Co$_{40}$Fe$_{40}$B$_{20}$/Pt thin-film electrode which enables voltage control of a magnetic skyrmion state. Skyrmion nucleation and annihilation are caused by Li ion accumulation and depletion at the magnetic interface under an applied voltage. The skyrmion density can be controlled through dc applied fields or through voltage pulses. The skyrmions are nucleated by single 60-$μ$s voltage pulses and devices are cycled 750,000 times without loss of electrical performance. Our results demonstrate a simple and robust approach to ionic control of magnetism in spin-based devices.
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Submitted 27 January, 2023;
originally announced January 2023.
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Thermal motion of skyrmion arrays in granular films
Authors:
Yifan Zhou,
Rhodri Mansell,
Tapio Ala-Nissila,
Sebastiaan van Dijken
Abstract:
Magnetic skyrmions are topologically-distinct swirls of magnetic moments which display particle-like behaviour, including the ability to undergo thermally-driven diffusion. In this paper we study the thermally activated motion of arrays of skyrmions using temperature dependent micromagnetic simulations where the skyrmions form spontaneously. In particular, we study the interaction of skyrmions wit…
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Magnetic skyrmions are topologically-distinct swirls of magnetic moments which display particle-like behaviour, including the ability to undergo thermally-driven diffusion. In this paper we study the thermally activated motion of arrays of skyrmions using temperature dependent micromagnetic simulations where the skyrmions form spontaneously. In particular, we study the interaction of skyrmions with grain boundaries, which are a typical feature of sputtered ultrathin films used in experimental devices. We find the interactions lead to two distinct regimes. For longer lag times the grains lead to a reduction in the diffusion coefficient, which is strongest for grain sizes similar to the skyrmion diameter. At shorter lag times the presence of grains enhances the effective diffusion coefficient due to the gyrotropic motion of the skyrmions induced by their interactions with grain boundaries. For grain sizes significantly larger than the skyrmion diameter clustering of the skyrmions occurs in grains with lower magnetic anisotropy.
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Submitted 18 March, 2021;
originally announced March 2021.
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Voltage control of skyrmions: creation, annihilation and zero-magnetic field stablization
Authors:
Yifan Zhou,
Rhodri Mansell,
Sebastiaan van Dijken
Abstract:
Voltage manipulation of skyrmions is a promising path towards low-energy spintronic devices. Here, voltage effects on skyrmions in a GdOx/Gd/Co/Pt heterostructure are observed experimentally. The results show that the skyrmion density can be both enhanced and depleted by the application of an electric field, along with the ability, at certain magnetic fields to completely switch the skyrmion state…
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Voltage manipulation of skyrmions is a promising path towards low-energy spintronic devices. Here, voltage effects on skyrmions in a GdOx/Gd/Co/Pt heterostructure are observed experimentally. The results show that the skyrmion density can be both enhanced and depleted by the application of an electric field, along with the ability, at certain magnetic fields to completely switch the skyrmion state on and off. Further, a zero magnetic field skyrmion state can be stablized under a negative bias voltage using a defined voltage and magnetic field sequence. The voltage effects measured here occur on a few-second timescale, suggesting an origin in voltage-controlled magnetic anisotropy rather than ionic effects. By investigating the skyrmion nucleation rate as a function of temperature, we extract the energy barrier to skyrmion nucleation in our sample. Further, micromagnetic simulations are used to explore the effect of changing the anisotropy and Dzyaloshinskii-Moriya interaction on skyrmion density. Our work demonstrates the control of skyrmions by voltages, showing functionalities desirable for commercial devices.
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Submitted 18 February, 2021;
originally announced February 2021.
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Electronic and magnetic characterization of epitaxial CrBr$_3$ monolayers
Authors:
Shawulienu Kezilebieke,
Orlando J. Silveira,
Md N. Huda,
Viliam Vaňo,
Markus Aapro,
Somesh Chandra Ganguli,
Jouko Lahtinen,
Rhodri Mansell,
Sebastiaan van Dijken,
Adam S. Foster,
Peter Liljeroth
Abstract:
The ability to imprint a given material property to another through proximity effect in layered two-dimensional materials has opened the way to the creation of designer materials. Here, we use molecular-beam epitaxy (MBE) for a direct synthesis of a superconductor-magnet hybrid heterostructure by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer ferromagnetic chromium trib…
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The ability to imprint a given material property to another through proximity effect in layered two-dimensional materials has opened the way to the creation of designer materials. Here, we use molecular-beam epitaxy (MBE) for a direct synthesis of a superconductor-magnet hybrid heterostructure by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer ferromagnetic chromium tribromide (CrBr$_3$). Using different characterization techniques and density-functional theory (DFT) calculations, we have confirmed that the CrBr$_3$ monolayer retains its ferromagnetic ordering with a magnetocrystalline anisotropy favoring an out-of-plane spin orientation. Low-temperature scanning tunneling microscopy (STM) measurements show a slight reduction of the superconducting gap of NbSe$_2$ and the formation of a vortex lattice on the CrBr$_3$ layer in experiments under an external magnetic field. Our results contribute to the broader framework of exploiting proximity effects to realize novel phenomena in 2D heterostructures.
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Submitted 28 September, 2020;
originally announced September 2020.
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Magnetoplasmonic properties of perpendicularly magnetized $[$Co/Pt$]_{N}$ nanodots
Authors:
Francisco Freire-Fernández,
Rhodri Mansell,
Sebastiaan van Dijken
Abstract:
We demonstrate a ten-fold resonant enhancement of magneto-optical effects in perpendicularly magnetized $[$Co/Pt$]_{N}$ nanodots mediated by the excitation of optimized plasmon modes. Two magnetoplasmonic systems are considered; square arrays of $[$Co/Pt$]_{N}$ nanodots on glass and identical arrays on a Au/SiO2 bilayer. On glass, the optical and magneto-optical spectra of the nanodot arrays are d…
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We demonstrate a ten-fold resonant enhancement of magneto-optical effects in perpendicularly magnetized $[$Co/Pt$]_{N}$ nanodots mediated by the excitation of optimized plasmon modes. Two magnetoplasmonic systems are considered; square arrays of $[$Co/Pt$]_{N}$ nanodots on glass and identical arrays on a Au/SiO2 bilayer. On glass, the optical and magneto-optical spectra of the nanodot arrays are dominated by the excitation of a surface lattice resonance (SLR), whereas on Au/SiO${}_{2}$, a narrow surface plasmon polariton (SPP) resonance tailors the spectra further. Both the SLR and SPP modes are magneto-optically active leading to an enhancement of the Kerr angle. We detail the dependence of optical and magneto-optical spectra on the number of Co/Pt bilayer repetitions, the nanodot diameter, and the array period, offering design rules on how to maximize and spectrally tune the magneto-optical response of perpendicularly magnetized $[$Co/Pt$]_{N}$ nanodots.
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Submitted 15 November, 2019;
originally announced November 2019.
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Electronic and Magnetic Characterization of Epitaxial VSe$_2$ Monolayers on Superconducting NbSe$_2$
Authors:
Shawulienu Kezilebieke,
Md Nurul Huda,
Paul Dreher,
Ilkka Manninen,
Yifan Zhou,
Jani Sainio,
Rhodri Mansell,
Miguel M. Ugeda,
Sebastiaan van Dijken,
Hannu-Pekka Komsa,
Peter Liljeroth
Abstract:
Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct synthesis of superconductor-magnet hybrid heterostructures by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer (ML) vanadium diselenide…
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Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct synthesis of superconductor-magnet hybrid heterostructures by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer (ML) vanadium diselenide (VSe$_2$). More significantly, the in-situ growth in ultra-high vacuum (UHV) allows to produce a clean and an atomically sharp interfaces. Combining different characterization techniques and density-functional theory (DFT) calculations, we investigate the electronic and magnetic properties of VSe$_2$ on NbSe$_2$. Low temperature scanning tunneling microscopy (STM) measurements demonstrate a reduction of the superconducting gap on VSe$_2$ layer. This together with the lack of charge density wave signatures indicates magnetization of the sheet, but not of a conventional itinerant ferromagnet.
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Submitted 12 November, 2019; v1 submitted 23 September, 2019;
originally announced September 2019.
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Thickness dependence of electron-electron interactions in topological p-n junctions
Authors:
Dirk Backes,
Danhong Huang,
Rhodri Mansell,
Martin Lanius,
Jörn Kampmeier,
David Ritchie,
Gregor Mussler,
Godfrey Gumbs,
Detlev Grützmacher,
Vijay Narayan
Abstract:
Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a find…
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Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers.
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Submitted 12 December, 2018;
originally announced December 2018.
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Symmetry-Breaking Interlayer Dzyaloshinskii-Moriya Interactions in Synthetic Antiferromagnets
Authors:
Amalio Fernández-Pacheco,
Elena Vedmedenko,
Fanny Ummelen,
Rhodri Mansell,
Dorothée Petit,
Russell P. Cowburn
Abstract:
The magnetic interfacial Dzyaloshinskii-Moriya interaction (DMI) in multi-layered thin films can lead to exotic chiral spin states, of paramount importance for future spintronic technologies. Interfacial DMI is normally manifested as an intralayer interaction, mediated via a paramagnetic heavy metal in systems lacking inversion symmetry. Here we show how, by designing synthetic antiferromagnets wi…
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The magnetic interfacial Dzyaloshinskii-Moriya interaction (DMI) in multi-layered thin films can lead to exotic chiral spin states, of paramount importance for future spintronic technologies. Interfacial DMI is normally manifested as an intralayer interaction, mediated via a paramagnetic heavy metal in systems lacking inversion symmetry. Here we show how, by designing synthetic antiferromagnets with canted magnetization states, it is also possible to observe interfacial interlayer-DMI at room temperature. The interlayer-DMI breaks the symmetry of the magnetic reversal process via the emergence of noncollinear spin states, which results in chiral exchange-biased hysteresis loops. This work opens up yet unexplored avenues for the development of new chiral spin textures in multi-layered thin film systems.
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Submitted 29 October, 2018; v1 submitted 3 October, 2018;
originally announced October 2018.
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Nano scale thermo-electrical detection of magnetic domain wall propagation
Authors:
Patryk Krzysteczko,
James Wells,
Alexander Fernandez Scarioni,
Zbynek Soban,
Tomas Janda,
Xiukun Hu,
Vit Saidl,
Richard P. Campion,
Rhodri Mansell,
Ji-Hyun Lee,
Russell P. Cowburn,
Petr Nemec,
Olga Kazakova,
Joerg Wunderlich,
Hans Werner Schumacher
Abstract:
In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition…
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In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition speed, or can only be applied on specific materials. Here, we show that the anomalous Nernst effect provides a simple and powerful tool to precisely track the position and motion of a single DW propagating in a PMA nanowire. We detect field and current driven DW propagation in both metallic heterostructures and dilute magnetic semiconductors over a broad temperature range. The demonstrated spatial resolution below 20 nm is comparable to the DW width in typical metallic PMA systems.
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Submitted 23 November, 2016;
originally announced November 2016.
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Topological states and phase transitions in Sb$_2$Te$_3$-GeTe multilayers
Authors:
Thuy-Anh Nguyen,
Dirk Backes,
Angadjit Singh,
Rhodri Mansell,
Crispin Barnes,
David A. Ritchie,
Gregor Mussler,
Martin Lanius,
Detlev Grützmacher,
Vijay Narayan
Abstract:
Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes interact…
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Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes interact is lacking. Here, working with multilayers of the TI Sb$_2$Te$_3$ and the band insulator GeTe, we provide experimental evidence of a multiple topological modes in a single Sb$_2$Te$_3$-GeTe-Sb$_2$Te$_3$ structure. Furthermore, we show that reducing the thickness of the GeTe layer induces a phase transition from a Dirac-like phase to a gapped phase. By comparing different multilayer structures we demonstrate that this transition occurs due to the hybridisation of states associated with different TI films. Our results demonstrate that the Sb$_2$Te$_3$-GeTe system offers strong potential towards manipulating topological states as well as towards controlledly inducing various topological phases.
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Submitted 23 May, 2016;
originally announced May 2016.
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Disentangling surface and bulk transport in topological-insulator $p$-$n$ junctions
Authors:
D. Backes,
D. Huang,
R. Mansell,
M. Lanius,
J. Kampmeier,
D. A. Ritchie,
G. Mussler,
G. Gumbs,
D. Grützmacher,
V. Narayan
Abstract:
By combining $n$-type $\mathrm{Bi_2Te_3}$ and $p$-type $\mathrm{Sb_2Te_3}$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between $n$- and $p$-type surface carriers. Here we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical…
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By combining $n$-type $\mathrm{Bi_2Te_3}$ and $p$-type $\mathrm{Sb_2Te_3}$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between $n$- and $p$-type surface carriers. Here we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical $\mathrm{Bi_2Te_3/Sb_2Te_3}$ heterostructures with varying relative thicknesses of the top and bottom layers. With increasing thickness of the $\mathrm{Sb_2Te_3}$ layer we observe a change from $n$- to $p$-type behavior via a specific thickness where the Hall signal is immeasurable. Assuming that the the bulk and surface states contribute in parallel, we can calculate and reproduce the dependence of the Hall and longitudinal components of resistivity on the film thickness. This highlights the role played by the bulk conduction channels which, importantly, cannot be probed using surface sensitive spectroscopic techniques. Our calculations are then buttressed by a semi-classical Boltzmann transport theory which rigorously shows the vanishing of the Hall signal. Our results provide crucial experimental and theoretical insights into the relative roles of the surface and bulk in the vertical topological $p$-$n$ junctions.
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Submitted 18 September, 2017; v1 submitted 22 May, 2016;
originally announced May 2016.
