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Fragility of the antichiral edge states under disorder
Authors:
Marwa Mannaï,
Eduardo V. Castro,
Sonia Haddad
Abstract:
Chiral edge states are the fingerprint of the bulk-edge correspondence in a Chern insulator. Co-propagating edge modes, known as antichiral edge states, have been predicted to occur in the so-called modified Haldane model describing a two-dimensional semi-metal with broken time reversal symmetry. These counterintuitive edge modes are argued to be immune to backscattering and extremely robust again…
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Chiral edge states are the fingerprint of the bulk-edge correspondence in a Chern insulator. Co-propagating edge modes, known as antichiral edge states, have been predicted to occur in the so-called modified Haldane model describing a two-dimensional semi-metal with broken time reversal symmetry. These counterintuitive edge modes are argued to be immune to backscattering and extremely robust against disorder. Here, we investigate the robustness of the antichiral edge states in the presence of Anderson disorder. By analysing different localization parameters, we show that, contrary to the general belief, these edge modes are fragile against disorder, and can be easily localized. Our work provides insights to improve the transport efficiency in the burgeoning fields of antichiral topological photonics and acoustics.
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Submitted 5 December, 2023;
originally announced December 2023.
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Stacking-induced Chern insulator
Authors:
Marwa Mannaï,
Jean-Noël Fuchs,
Frédéric Piéchon,
Sonia Haddad
Abstract:
Graphene can be turned into a semimetal with broken time-reversal symmetry by adding a valley-dependent pseudo-scalar potential that shifts the Dirac point energies in opposite directions, as in the modified Haldane model. We consider a bilayer obtained by stacking two time-reversed copies of the modified Haldane model, where conduction and valence bands cross to give rise to a nodal line in each…
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Graphene can be turned into a semimetal with broken time-reversal symmetry by adding a valley-dependent pseudo-scalar potential that shifts the Dirac point energies in opposite directions, as in the modified Haldane model. We consider a bilayer obtained by stacking two time-reversed copies of the modified Haldane model, where conduction and valence bands cross to give rise to a nodal line in each valleys. In the AB stacking, the interlayer hop** lifts the degeneracy of the nodal lines and induces a band repulsion, leading surprisingly to a chiral insulator with a Chern number $C=\pm2$. As a consequence a pair of chiral edge states appears at the boundaries of the ribbon bilayer geometry. In contrast, the AA stacking does not show nontrivial topological phases. We discuss possible experimental implementations of our results.
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Submitted 13 January, 2023; v1 submitted 4 August, 2022;
originally announced August 2022.
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Twistronics versus straintronics in twisted bilayers of graphene and transition metal dichalcogenides
Authors:
Marwa Mannaï,
Sonia Haddad
Abstract:
Several numerical studies have shown that the electronic properties of twisted bilayers of graphene (TBLG) and transition metal dichalcogenides (TMDs) are tunable by strain engineering of the stacking layers. In particular, the flatness of the low-energy moiré bands of the rigid and the relaxed TBLG was found to be, substantially, sensitive to the strain. However, to the best of our knowledge, the…
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Several numerical studies have shown that the electronic properties of twisted bilayers of graphene (TBLG) and transition metal dichalcogenides (TMDs) are tunable by strain engineering of the stacking layers. In particular, the flatness of the low-energy moiré bands of the rigid and the relaxed TBLG was found to be, substantially, sensitive to the strain. However, to the best of our knowledge, there are no full analytical calculations of the effect of strain on such bands. We derive, based on the continuum model of moiré flat bands, the low-energy Hamiltonian of twisted homobilayers of graphene and TMDs under strain at small twist angles. We obtain the analytical expressions of the strain-renormalized Dirac velocities and explain the role of strain in the emergence of the flat bands. We discuss how strain could correct the twist angles and bring them closer to the magic angle $θ_m\sim1.05^{\circ}$ of TBLG and how it may reduce the widths of the lowest-energy bands at charge neutrality of the twisted homobilayer of TMDs. The analytical results are compared with numerical and experimental findings and also with our numerical calculations based on the continuum model.
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Submitted 23 May, 2021; v1 submitted 17 November, 2020;
originally announced November 2020.
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Strain tuned topology in the Haldane and the modified Haldane models
Authors:
Marwa Mannaï,
Sonia Haddad
Abstract:
We study the interplay between a uniaxial strain and the topology of the Haldane and the modified Haldane models which, respectively, exhibit chiral and antichiral edge modes. The latter were, recently, predicted by Colomés and Franz (Phys. Rev. Lett. {\bf 120}, 086603 (2018)) and expected to take place in the transition metal dichalcogenides. Using the continuum approximation and a tight-binding…
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We study the interplay between a uniaxial strain and the topology of the Haldane and the modified Haldane models which, respectively, exhibit chiral and antichiral edge modes. The latter were, recently, predicted by Colomés and Franz (Phys. Rev. Lett. {\bf 120}, 086603 (2018)) and expected to take place in the transition metal dichalcogenides. Using the continuum approximation and a tight-binding approach, we investigate the effect of the strain on the topological phases and the corresponding edge modes. We show that the strain could induce transitions between topological phases with opposite Chern numbers or tune a topological phase into a trivial one. As a consequence, the dispersions of the chiral and antichiral edge modes are found to be strain dependent. The strain may reverse the direction of propagation of these modes and eventually destroy them. This effect may be used for strain-tunable edge currents in topological insulators and two-dimensional transition metal dichalcogenides.
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Submitted 10 April, 2020; v1 submitted 25 July, 2019;
originally announced July 2019.
