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Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure
Authors:
Romaine Kerjouan,
Michael Rosticher,
Aurélie Pierret,
Kenji Watanabe,
Takashi Taniguchi,
Sukhdeep Dhillon,
Robson Ferreira,
Daniel Dolfi,
Mark Goerbig,
Bernard Plaçais,
Juliette Mangeney
Abstract:
The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hop** parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum tr…
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The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hop** parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum transport across a succession of strain-induced barriers. We use high-mobility, hBN-encapsulated graphene, transferred over a large (10x10 $μ$m$^{2}$) crenellated hBN substrate. We show the emergence of a broad resistance ancillary peak at positive energy that arises from Klein tunneling barriers induced by the tensile strain at the trench edges. Our theoretical study, in quantitative agreement with experiment, highlights the balanced contributions of strain-induced scalar and pseudo-vector potentials on ballistic transport. Our results establish crenellated van der Waals heterostructures as a promising platform for strain engineering in view of applications and basic physics.
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Submitted 28 February, 2024;
originally announced February 2024.
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Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
Authors:
K. Abdukayumov,
M. Mičica,
F. Ibrahim,
C. Vergnaud,
A. Marty,
J. -Y. Veuillen,
P. Mallet,
I. Gomes de Moraes,
D. Dosenovic,
A. Wright,
J. Tignon,
J. Mangeney,
A. Ouerghi,
V. Renard,
F. Mesple,
F. Bonell,
H. Okuno,
M. Chshiev,
J. -M. George,
H. Jaffrès,
S. Dhillon,
M. Jamet
Abstract:
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t…
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Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission.
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Submitted 11 May, 2023;
originally announced May 2023.
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Atomic Layer-controlled Nonlinear Terahertz Valleytronics in Dirac Semi-metal and Semiconductor PtSe2
Authors:
Minoosh Hemmat,
Sabrine Ayari,
Martin Micica,
Hadrien Vergnet,
Guo Shasha,
Mehdi Arfaoui,
Xuechao Yu,
Daniel Vala,
Adrien Wright,
Kamil Postava,
Juliette Mangeney,
Francesca Carosella,
Sihem Jaziri,
Qi Jie Wang,
Liu Zheng,
Jerome Tignon,
Robson Ferreira,
Emmanuel Baudin,
Sukhdeep Dhillon
Abstract:
Platinum diselenide (PtSe2) is a promising two-dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near-infrared to a semimetal with the number of atomic layers. This gives the material unique THz photonic properties that can be layer-engineered. Here, we demonstrate that a c…
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Platinum diselenide (PtSe2) is a promising two-dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near-infrared to a semimetal with the number of atomic layers. This gives the material unique THz photonic properties that can be layer-engineered. Here, we demonstrate that a controlled THz nonlinearity - tuned from monolayer to bulk PtSe2 - can be realised in wafer size polycrystalline PtSe2 through the generation of ultrafast photocurrents and the engineering of the bandstructure valleys. This is combined with the PtSe2 layer interaction with the substrate for a broken material centro-symmetry permitting a second order nonlinearity. Further, we show layer-dependent circular dichroism, where the sign of the ultrafast currents and hence the phase of the emitted THz pulse can be controlled through the excitation of different bandstructure valleys. In particular, we show that a semimetal has a strong dichroism that is absent in the monolayer and few layer semiconducting limit. The microscopic origins of this TMD bandstructure engineering is highlighted through detailed DFT simulations and show that circular dichroism can be controlled when PtSe2 becomes a semimetal and when the K-valleys can be excited. As well as showing that PtSe2 is a promising material for THz generation through layer controlled optical nonlinearities, this work opens up new class of circular dichroism materials beyond the monolayer limit that has been the case of traditional TMDs, and impacting a range of domains from THz valleytronics, THz spintronics to harmonic generation.
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Submitted 4 April, 2023;
originally announced April 2023.
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Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator
Authors:
E. Rongione,
L. Baringthon,
D. She,
G. Patriarche,
R. Lebrun,
A. Lemaitre,
M. Morassi,
N. Reyren,
M. Micica,
J. Mangeney,
J. Tignon,
F. Bertran,
S. Dhillon,
P. Le Fevre,
H. Jaffres,
J. -M. George
Abstract:
The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface…
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The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation.
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Submitted 25 March, 2023;
originally announced March 2023.
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Ultrashort pulse generation from a graphene-coupled passively mode-locked terahertz laser
Authors:
Elisa Riccardi,
Valentino Pistore,
Seonggil Kang,
Lukas Seitner,
Anna De Vetter,
Christian Jirauschek,
Juliette Mangeney,
Lianhe Li,
A. Giles Davies,
Edmund H. Linfield,
Andrea C. Ferrari,
Sukhdeep S. Dhillon,
Miriam S. Vitiello
Abstract:
The generation of stable trains of ultra-short (fs-ps), terahertz (THz)-frequency radiation pulses, with large instantaneous intensities, is an underpinning requirement for the investigation of light-matter interactions, for metrology and for ultra-high-speed communications. In solid-state electrically-pumped lasers, the primary route for generating short pulses is through passive mode-locking. Ho…
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The generation of stable trains of ultra-short (fs-ps), terahertz (THz)-frequency radiation pulses, with large instantaneous intensities, is an underpinning requirement for the investigation of light-matter interactions, for metrology and for ultra-high-speed communications. In solid-state electrically-pumped lasers, the primary route for generating short pulses is through passive mode-locking. However, this has not yet been achieved in the THz range, defining one of the longest standing goals over the last two decades. In fact, the realization of passive mode-locking has long been assumed to be inherently hindered by the fast recovery times associated with the intersubband gain of THz lasers. Here, we demonstrate a self-starting miniaturized ultra-short pulse THz laser, exploiting an original device architecture that includes the surface patterning of multilayer-graphene saturable absorbers distributed along the entire cavity of a double-metal semiconductor 2.30-3.55 THz wire laser. Self-starting pulsed emission with 4.0-ps-long pulses in a compact, all-electronic, all-passive and inexpensive configuration is demonstrated.
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Submitted 21 September, 2022;
originally announced September 2022.
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Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin-phonon interactions
Authors:
E. Rongione,
O. Gueckstock,
M. Mattern,
O. Gomonay,
H. Meer,
C. Schmitt,
R. Ramos,
E. Saitoh,
J. Sinova,
H. Jaffrès,
M. Mičica,
J. Mangeney,
S. T. B. Goennenwein,
S. Geprägs,
T. Kampfrath,
M. Kläui,
M. Bargheer,
T. S. Seifert,
S. Dhillon,
R. Lebrun
Abstract:
Antiferromagnetic materials have been proposed as new types of narrowband THz spintronic devices owing to their ultrafast spin dynamics. Manipulating coherently their spin dynamics, however, remains a key challenge that is envisioned to be accomplished by spin-orbit torques or direct optical excitations. Here, we demonstrate the combined generation of broadband THz (incoherent) magnons and narrowb…
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Antiferromagnetic materials have been proposed as new types of narrowband THz spintronic devices owing to their ultrafast spin dynamics. Manipulating coherently their spin dynamics, however, remains a key challenge that is envisioned to be accomplished by spin-orbit torques or direct optical excitations. Here, we demonstrate the combined generation of broadband THz (incoherent) magnons and narrowband (coherent) magnons at 1 THz in low dam** thin films of NiO/Pt. We evidence, experimentally and through modelling, two excitation processes of magnetization dynamics in NiO, an off-resonant instantaneous optical spin torque and a strain-wave-induced THz torque induced by ultrafast Pt excitation. Both phenomena lead to the emission of a THz signal through the inverse spin Hall effect in the adjacent heavy metal layer. We unravel the characteristic timescales of the two excitation processes found to be < 50 fs and > 300 fs, respectively, and thus open new routes towards the development of fast opto-spintronic devices based on antiferromagnetic materials.
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Submitted 24 May, 2022;
originally announced May 2022.
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Ultrafast spin-charge conversion at SnBi$_2$Te$_4$/Co topological insulator interfaces probed by terahertz emission spectroscopy
Authors:
E. Rongione,
S. Fragkos,
L. Baringthon,
J. Hawecker,
E. Xenogiannopoulou,
P. Tsipas,
C. Song,
M. Micica,
J. Mangeney,
J. Tignon,
T. Boulier,
N. Reyren,
R. Lebrun,
J. -M. George,
P. Lefèvre,
S. Dhillon,
A. Dimoulas,
H. Jaffres
Abstract:
Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, we demonstrate sizable THz emission from a nanometric thick topological insul…
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Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, we demonstrate sizable THz emission from a nanometric thick topological insultator (TI)/ferromagnetic junction - SnBi$_2$Te$_4$/Co - specifically designed to avoid bulk band crossing with the TSS at the Fermi level, unlike its parent material Bi$_2$Te$_3$. THz emission time domain spectroscopy (TDS) is used to indicate the TSS contribution to the SCC by investigating the TI thickness and angular dependence of the THz emission. This work illustrates THz emission TDS as a powerful tool alongside angular resolved photoemission spectroscopy (ARPES) methods to investigate the interfacial spintronic properties of TI/ferromagnet bilayers.
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Submitted 16 March, 2022;
originally announced March 2022.
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Spintronic THz emitters based on transition metals and semi-metals/Pt multilayers
Authors:
J. Hawecker,
E. Rongione,
A. Markou,
S. Krishnia,
F. Godel,
S. Collin,
R. Lebrun,
J. Tignon,
J. Mangeney,
T. Boulier,
J. -M. George,
C. Felser,
H. Jaffrès,
S. Dhillon
Abstract:
Spintronic terahertz (THz) emitters (STE) based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials and control of these interfaces at the nanometer level has become vital to engineer their THz emission properties.In this work, we present studies of the optimization of such structures th…
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Spintronic terahertz (THz) emitters (STE) based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials and control of these interfaces at the nanometer level has become vital to engineer their THz emission properties.In this work, we present studies of the optimization of such structures through a multi-pronged approach, taking advantage of material and interface engineering to enhance the THz spintronic emission. This includes: the application of multi-stacks of HM/FM junctions and their application to trilayer structures, the use of spin-sinks to simultaneously enhance the THz emitted fields and reduce the use of thick Pt layers to reduce optical absorption, and the use of semi-metals to increase the spin polarization and thus the THz emission. Through these approaches, significant enhancements of the THz field can be achieved. Importantly, taking into account the optical absorption permits to elucidate novel phenomena such as the relation between the spin diffusion length and the spin-sink using THz spectroscopy, as well as possibly distinguishing between self and interface spin-to-charge conversion in semi-metals.
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Submitted 16 March, 2022;
originally announced March 2022.
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Self-Kerr effect across the yellow $\mathrm{Cu_2O}$ Rydberg series
Authors:
Corentin Morin,
Jérôme Tignon,
Juliette Mangeney,
Sukhdeep Dhillon,
Gerard Czajkowski,
Karol Karpiński,
Sylwia Zielińska-Raczyńska,
David Ziemkiewicz,
Thomas Boulier
Abstract:
We investigate the nonlinear refraction induced by Rydberg excitons in $\mathrm{Cu_2O}$. Using a high-precision interferometry imaging technique that spatially resolves the nonlinear phase shift, we observe significant shifts at extremely low laser intensity near each exciton resonance. From this, we derive the nonlinear index $\mathrm{n_2}$, present the $\mathrm{n_2}$ spectrum for $n\geq 5$ and r…
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We investigate the nonlinear refraction induced by Rydberg excitons in $\mathrm{Cu_2O}$. Using a high-precision interferometry imaging technique that spatially resolves the nonlinear phase shift, we observe significant shifts at extremely low laser intensity near each exciton resonance. From this, we derive the nonlinear index $\mathrm{n_2}$, present the $\mathrm{n_2}$ spectrum for $n\geq 5$ and report large $\mathrm{n_2}$ values of order $10^{-3}$ mm$^2$/mW. Moreover, we observe a rapid saturation of the Kerr nonlinearity and find that the saturation intensity $\mathrm{I_{sat}}$ decreases as $n^{-7}$. We explain this with the Rydberg blockade mechanism, whereby giant Rydberg interactions limit the exciton density, resulting in a maximum phase shift of 0.5 rad in our setup.
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Submitted 18 February, 2022;
originally announced February 2022.
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Spin injection efficiency at metallic interfaces probed by THz emission spectroscopy
Authors:
Jacques Hawecker,
T. H. Dang,
Enzo Rongione,
James Boust,
Sophie Collin,
Jean-Marie George,
Henri-Jean Drouhin,
Yannis Laplace,
Romain Grasset,
**gwei Dong,
Juliette Mangeney,
Jerome Tignon,
Henri Jaffrès,
Luca Perfetti,
Sukhdeep Dhillon
Abstract:
Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic interfaces. However, its relation to traditional, steady state, ferromagnetic resonance techniques is poorly understood. Here we investigate nanometric trilayers of Co/X/Pt (X=Ti, Au or Au0:85W0:15) as a function of the 'X' l…
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Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic interfaces. However, its relation to traditional, steady state, ferromagnetic resonance techniques is poorly understood. Here we investigate nanometric trilayers of Co/X/Pt (X=Ti, Au or Au0:85W0:15) as a function of the 'X' layer thickness, where THz emission generated by the inverse spin Hall effect is compared to the Gilbert dam** of the ferromagnetic resonance. Through the insertion of the 'X' layer we show that the ultrafast spin current injected in the non-magnetic layer defines a direct spin conductance, whereas the Gilbert dam** leads to an effective spin mixing-conductance of the trilayer. Importantly, we show that these two parameters are connected to each other and that spin-memory losses can be modeled via an effective Hamiltonian with Rashba fields. This work highlights that magneto-circuits concepts can be successfully extended to ultrafast spintronic devices, as well as enhancing the understanding of spin-to-charge conversion processes through the complementarity between ultrafast THz spectroscopy and steady state techniques.
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Submitted 17 March, 2021;
originally announced March 2021.
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Tamm Cavity in the Terahertz Spectral Range
Authors:
Simon Messelot,
Clémentine Symonds,
Joël Bellessa,
Jérôme Tignon,
Sukhdeep Dhillon,
Jean-Blaise Brubach,
Pascale Roy,
Juliette Mangeney
Abstract:
Electromagnetic resonators, which are based on optical cavities or electronic circuits, are key elements to enhance and control light-matter interaction. In the THz range, current optical cavities exhibit very high-quality factors with $(λ/2)^3$ mode volumes limited by diffraction, whereas resonant electronic circuits show low quality factor but provide strong subwavelength effective volume (…
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Electromagnetic resonators, which are based on optical cavities or electronic circuits, are key elements to enhance and control light-matter interaction. In the THz range, current optical cavities exhibit very high-quality factors with $(λ/2)^3$ mode volumes limited by diffraction, whereas resonant electronic circuits show low quality factor but provide strong subwavelength effective volume ($10^{-6} λ^3$). To overcome the limitations of each type of resonator, great efforts are being devoted to improving the performances of current methods or to the emergence of original approaches. Here, we report on an optical resonator based on Tamm modes newly applied to the THz range, comprising a metallic layer on a distributed Bragg reflector and demonstrating a high-quality factor of 230 at $\sim$1 THz. We further experimentally and theoretically show a fine-tuning of the Tamm mode frequency (over a 250 GHz range) and polarization sensitivity by subwavelength structuration of the metallic layer. Electromagnetic simulations also reveal that THz Tamm modes are confined over a $λ$/2 length within the distributed Bragg reflector and can be ideally coupled to both bulk materials and 2D materials. These THz Tamm cavities are therefore attractive as basic building blocks of lasers, for the development of advanced THz optoelectronic devices such as sensitive detectors, high-contrast modulators, narrow filters, and polarizers, as well as for THz cavity quantum electrodynamics in nanostructures.
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Submitted 8 March, 2021;
originally announced March 2021.
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Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy
Authors:
T. H. Dang,
J. Hawecker,
E. Rongione,
G. Baez Flores,
D. Q. To,
J. C. Rojas-Sanchez,
H. Nong,
J. Mangeney,
J. Tignon,
F. Godel,
S. Collin,
P. Seneor,
M. Bibes,
A. Fert,
M. Anane,
J. -M. George,
L. Vila,
M. Cosset-Cheneau,
D. Dolfi,
R. Lebrun,
P. Bortolotti,
K. Belashchenko,
S. Dhillon,
H. Jaffrès
Abstract:
Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inv…
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Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pum** measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pum** for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion.
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Submitted 12 December, 2020;
originally announced December 2020.
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Ultrasensitive Photoresponse of Graphene Quantum Dot in the Coulomb Blockade Regime to THz Radiation
Authors:
E. Riccardi,
S. Massabeau,
F. Valmorra,
S. Messelot,
M. Rosticher,
J. Tignon,
K. Watanabe,
T. Taniguchi,
M. Delbecq,
S. Dhillon,
R. Ferreira,
S. Balibar,
T. Kontos,
J. Mangeney
Abstract:
Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonst…
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Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of $\sim$10 pW provides a photocurrent response in the nanoampere range, resulting from a renormalization of the chemical potential of the GQD of $\sim$0.15 meV. We attribute this photoresponse to an interfacial photogating effect. Furthermore, our analysis reveals the absence of thermal effects, opening new directions in the study of coherent quantum effects at THz frequencies in GQDs.
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Submitted 4 June, 2020;
originally announced June 2020.
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Mutually synchronized macroscopic Josephson oscillations demonstrated by polarization analysis of superconducting terahertz emitters
Authors:
M. Tsujimoto,
S. Fujita,
G. Kuwano,
K. Maeda,
A. Elarabi,
J. Hawecker,
J. Tignon,
J. Mangeney,
S. S. Dhillon,
I. Kakeya
Abstract:
We demonstrate mutual synchronization of Josephson oscillations in multiple stacks of intrinsic Josephson junctions of the cuprate superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. Detailed analysis of the full polarization parameters allows the determination of a phase correlation between the stacks: a simultaneous emission state is described by a linear combination of individual emission states with…
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We demonstrate mutual synchronization of Josephson oscillations in multiple stacks of intrinsic Josephson junctions of the cuprate superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. Detailed analysis of the full polarization parameters allows the determination of a phase correlation between the stacks: a simultaneous emission state is described by a linear combination of individual emission states with a phase retardation. This proves that the stacks are coupled via a Josephson plasma in a superconducting substrate and the coupling matrices can be extracted from polarization analyses. Our findings suggest a route towards the realization of high-power terahertz sources based on the synchronization of a large number of intrinsic Josephson junctions.
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Submitted 15 April, 2020;
originally announced April 2020.
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Giant optical nonlinearity cancellation in quantum wells
Authors:
S. Houver,
A. Lebreton,
T. A. S. Pereira,
G. Xu,
R. Colombelli,
I. Kundu,
L. H. Li,
E. H. Linfield,
A. G. Davies,
J. Mangeney,
J. Tignon,
R. Ferreira,
S. S. Dhillon
Abstract:
Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their explo…
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Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their exploitation in frequency conversion. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant cancellation effects in systems with many confined quantum states. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband resonant nonlinearities, we show that these giant cancellations are a result of interfering second-order nonlinear contributions of light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of materials, this work can be employed as a new, extremely sensitive tool to elucidate the bandstructure properties of complex quantum well systems.
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Submitted 4 January, 2019;
originally announced January 2019.
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2D materials coupled to hybrid metal-dielectric waveguides for THz technology
Authors:
P. Huang,
S. Massabeau,
J. Tignon,
S. Dhillon,
A. Degiron,
J. Mangeney
Abstract:
In this letter, we propose hybrid metal-dielectric waveguides coupled to 2D materials that provide strong light-matter interaction at THz frequencies. We investigate the properties of the fundamental propagating modes and show that the strength of in-plane electric field components is maximized at the top of the dielectric strip on which the 2D material is deposited. Our simulation predicts 100 %…
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In this letter, we propose hybrid metal-dielectric waveguides coupled to 2D materials that provide strong light-matter interaction at THz frequencies. We investigate the properties of the fundamental propagating modes and show that the strength of in-plane electric field components is maximized at the top of the dielectric strip on which the 2D material is deposited. Our simulation predicts 100 % modulation of THz light by tuning the Fermi level of a graphene sheet deposited onto a 1mm-long waveguide. We also show the potential of graphene multilayers coupled to these waveguides for achieving lasing at THz frequency. Our approach is compatible with CMOS or THz quantum cascade laser technologies.
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Submitted 15 February, 2018;
originally announced February 2018.
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High permittivity processed SrTiO3 for metamaterials applications at terahertz frequencies
Authors:
Cyrielle Dupas,
Sophie Guillemet-Fritsch,
Pierre-Marie Geffroy,
Thierry Chartier,
Matthieu Baillergeau,
Juliette Mangeney,
Jean-Pierre Ganne,
Simon Marcellin,
Aloyse Degiron,
Eric Akmansoy
Abstract:
High permittivity SrTiO3 for the realization of all-dielectric metamaterials operating at terahertz frequencies was fabricated. A comparison of different processing routes evidences that Spark Plasma Sintering is the most effective sintering process to yield high density ceramic with high permittivity. We compare this sintering process with two others. The elaborated samples are characterized in t…
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High permittivity SrTiO3 for the realization of all-dielectric metamaterials operating at terahertz frequencies was fabricated. A comparison of different processing routes evidences that Spark Plasma Sintering is the most effective sintering process to yield high density ceramic with high permittivity. We compare this sintering process with two others. The elaborated samples are characterized in the low frequency and in the terahertz frequency ranges. Their relative permittivities are compared with that a reference \sto single crystal. The permittivity of the sample elaborated by Spark Plasma Sintering is as high as that the single crystal.
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Submitted 28 November, 2017;
originally announced February 2018.
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Room temperature broadband coherent terahertz emission induced by dynamical photon drag in graphene
Authors:
J. Maysonnave,
S. Huppert,
F. Wang,
S. Maero,
C. Berger,
W. de Heer,
T. B. Norris,
L. A. De Vaulchier,
S. Dhillon,
J. Tignon,
R. Ferreira,
J. Mangeney
Abstract:
Nonlinear couplings between photons and electrons in new materials give rise to a wealth of interesting nonlinear phenomena. This includes frequency mixing, optical rectification or nonlinear current generation, which are of particular interest for generating radiation in spectral regions that are difficult to access, such as the terahertz gap. Owing to its specific linear dispersion and high elec…
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Nonlinear couplings between photons and electrons in new materials give rise to a wealth of interesting nonlinear phenomena. This includes frequency mixing, optical rectification or nonlinear current generation, which are of particular interest for generating radiation in spectral regions that are difficult to access, such as the terahertz gap. Owing to its specific linear dispersion and high electron mobility at room temperature, graphene is particularly attractive for realizing strong nonlinear effects. However, since graphene is a centrosymmetric material, second-order nonlinearities a priori cancel, which imposes to rely on less attractive third-order nonlinearities. It was nevertheless recently demonstrated that dc-second-order nonlinear currents as well as ultrafast ac-currents can be generated in graphene under optical excitation. The asymmetry is introduced by the excitation at oblique incidence, resulting in the transfer of photon momentum to the electron system, known as the photon drag effect. Here, we show broadband coherent terahertz emission, ranging from about 0.1-4 THz, in epitaxial graphene under femtosecond optical excitation, induced by a dynamical photon drag current. We demonstrate that, in contrast to most optical processes in graphene, the next-nearest-neighbor couplings as well as the distinct electron-hole dynamics are of paramount importance in this effect. Our results indicate that dynamical photon drag effect can provide emission up to 60 THz opening new routes for the generation of ultra-broadband terahertz pulses at room temperature.
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Submitted 25 May, 2014;
originally announced May 2014.
