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Tailoring Photoluminescence by Strain-Engineering in Layered Perovskite Flakes
Authors:
Davide Spirito,
María Barra-Burillo,
Francesco Calavalle,
Costanza Lucia Manganelli,
Marco Gobbi,
Rainer Hillenbrand,
Fèlix Casanova,
Luis E. Hueso,
Beatriz Martín-García
Abstract:
Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical properties. Here, we investigate the temperature-dependent microphotoluminescence (PL) of 2D $(C_6H_5CH_2CH_2NH_3)_2Cs_3Pb_4Br_{13}$ HOIP subject to biaxia…
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Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical properties. Here, we investigate the temperature-dependent microphotoluminescence (PL) of 2D $(C_6H_5CH_2CH_2NH_3)_2Cs_3Pb_4Br_{13}$ HOIP subject to biaxial strain induced by a $SiO_2$ ring platform on which flakes are placed by viscoelastic stam**. At 80 K, we found that a strain of <1% can change the PL emission from a single peak (unstrained) to three well-resolved peaks. Supported by micro-Raman spectroscopy, we show that the thermomechanically generated strain modulates the bandgap due to changes in the octahedral tilting and lattice expansion. Mechanical simulations demonstrate the coexistence of tensile and compressive strain along the flake. The observed PL peaks add an interesting feature to the rich phenomenology of photoluminescence in 2D HOIPs, which can be exploited in tailored sensing and optoelectronic devices.
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Submitted 21 April, 2024;
originally announced April 2024.
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Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge$_{1-x}$Sn$_{x}$
Authors:
Agnieszka Anna Corley-Wiciak,
Diana Ryzhak,
Marvin Hartwig Zoellner,
Costanza Lucia Manganelli,
Omar Concepción,
Oliver Skibitzki,
Detlev Grützmacher,
Dan Buca,
Giovanni Capellini,
Davide Spirito
Abstract:
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layers that present mechanical deformation and anisotropic lattice expansion. In this work, a temperature-dependent Raman study in epitaxial Ge and Ge…
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Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layers that present mechanical deformation and anisotropic lattice expansion. In this work, a temperature-dependent Raman study in epitaxial Ge and Ge$_{1-x}$Sn$_{x}$ layers is presented. A model is introduced for the Raman mode energy shift as a function of temperature, comprising thermal expansion of the strained lattice and anharmonic corrections. With support of x-ray diffraction, the model is calibrated on experimental data of epitaxial Ge grown on Si and Ge$_{1-x}$Sn$_{x}$ grown on Ge/Si, finding that the main difference between bulk and epitaxial layers is related to the anisotropic lattice expansion. The phonon anharmonicity and other parameters do not depend on dislocation defect density (in the range $7\cdot 10^6$ - $4\cdot 10^8$ cm$^{-2}$) nor on alloy composition in the range 5-14 at.%. The strain-shift coefficient for the main model of Ge and for the Ge-Ge vibrational mode of Ge$_{1-x}$Sn$_{x}$ is weakly dependent on temperature and is around -500 cm$^{-1}$. In Ge$_{1-x}$Sn$_{x}$, the composition-shift coefficient amounts to -100 cm$^{-1}$, independent of temperature and strain.
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Submitted 5 February, 2024;
originally announced February 2024.
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Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
Authors:
C. Corley-Wiciak,
M. H. Zoellner,
I. Zaitsev,
K. Anand,
E. Zatterin,
Y. Yamamoto,
A. A. Corley-Wiciak,
F. Reichmann,
W. Langheinrich,
L. R. Schreiber,
C. L. Manganelli,
M. Virgilio,
C. Richter,
G. Capellini
Abstract:
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-in…
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The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-induced local modulations of the strain tensor components in the range of $2 - 8 \times 10^{-4}$ with ~60 nm lateral resolution. We have evaluated that these strain fluctuations are reflected into local modulations of the potential of the conduction band minimum larger than 2 meV, which is close to the orbital energy of an electrostatic quantum dot. We observe that the sign of the strain modulations at a given depth of the quantum well layer depends on the lateral dimensions of the electrodes. Since our work explores the impact of device geometry on the strain-induced energy landscape, it enables further optimization of the design of scaled CMOS-processed quantum devices.
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Submitted 18 April, 2023;
originally announced April 2023.
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Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
Authors:
M. Montanari,
M. Virgilio,
C. L. Manganelli,
P. Zaumseil,
M. H. Zoellner,
Y. Hou,
M. A. Schubert,
L. Persichetti,
L. Di Gaspare,
M. De Seta,
E. Vitiello,
E. Bonera,
F. Pezzoli,
G. Capellini
Abstract:
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow u…
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In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow us to unambiguously disentangle the spectral features of the quantum wells from those originating in the virtual substrate and to evaluate the impact on the optical properties of key parameters, such as quantum confinement, layer compositions, excess carrier density, and lattice strain. This detailed understanding of the radiative recombination processes is of paramount importance for the development of Ge/GeSi-based optical devices.
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Submitted 21 November, 2018;
originally announced November 2018.
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Modeling of strain-induced Pockels effect in Silicon
Authors:
Costanza Lucia Manganelli,
Paolo Pintus,
Claudio Bonati
Abstract:
We propose a theoretical model to describe the strain-induced linear electro-optic (Pockels) effect in centro-symmetric crystals. The general formulation is presented and the specific case of the strained silicon is investigated in detail because of its attractive properties for integrated optics. The outcome of this analysis is a linear relation between the second order susceptibility tensor and…
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We propose a theoretical model to describe the strain-induced linear electro-optic (Pockels) effect in centro-symmetric crystals. The general formulation is presented and the specific case of the strained silicon is investigated in detail because of its attractive properties for integrated optics. The outcome of this analysis is a linear relation between the second order susceptibility tensor and the strain gradient tensor, depending generically on fifteen coefficients. The proposed model greatly simplifies the description of the electro-optic effect in strained silicon waveguides, providing a powerful and effective tool for design and optimization of optical devices.
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Submitted 24 December, 2016; v1 submitted 23 July, 2015;
originally announced July 2015.
