-
Magneto-transport in the monolayer MoS2 material system for high-performance field-effect transistor applications
Authors:
Anup Kumar Mandia,
Rohit Kumar,
Seung-Cheol Lee,
Satadeep Bhattacharjee,
Bhaskaran Muralidharan
Abstract:
Electronic transport in monolayer MoS2 is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2 on different substrate materials, identify…
▽ More
Electronic transport in monolayer MoS2 is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2 on different substrate materials, identify the underlying bottlenecks, and provide guidelines for subsequent improvements, we present a deep analysis of the magneto-transport properties in the diffusive limit. Our calculations are performed on suspended monolayer MoS2 and MoS2 on different substrate materials taking into account remote impurity and the intrinsic and extrinsic phonon scattering mechanisms. We calculate the crucial transport parameters such as the Hall mobility, the conductivity tensor elements, the Hall factor, and the magnetoresistance over a wide range of temperatures, carrier concentrations, and magnetic fields. The Hall factor being a key quantity for calculating the carrier concentration and drift mobility, we show that for suspended monolayer MoS2 at room temperature, the Hall factor value is around 1.43 for magnetic fields ranging from 0.001 to 1 Tesla, which deviates significantly from the usual value of unity. In contrast, the Hall factor for various substrates approaches the ideal value of unity and remains stable in response to the magnetic field and temperature. We also show that the MoS2 over an Al2O3 substrate is a good choice for the Hall effect detector. Moreover, the magnetoresistance increases with an increase in magnetic field strength for smaller magnetic fields before reaching saturation at higher magnetic fields. The presented theoretical model quantitatively captures the scaling of mobility and various magnetoresistance coefficients with temperature, carrier densities and magnetic fields.
△ Less
Submitted 1 December, 2023;
originally announced December 2023.
-
High-frequency complex impedance analysis of the two-dimensional semiconducting MXene-$Ti_2CO_2$
Authors:
Anup Kumar Mandia,
Rohit Kumar,
Namitha Anna Koshi,
Seung-Cheol Lee,
Satadeep Bhattacharjee,
Bhaskaran Muralidharan
Abstract:
The two-dimensional compound group of MXenes, which exhibit unique optical, electrical, chemical, and mechanical properties, are an exceptional class of transition metal carbides and nitrides. In addition to traditional applications in Li-S, Li-ion batteries, conductive electrodes, hydrogen storage, and fuel cells, the low lattice thermal conductivity coupled with high electron mobility in the sem…
▽ More
The two-dimensional compound group of MXenes, which exhibit unique optical, electrical, chemical, and mechanical properties, are an exceptional class of transition metal carbides and nitrides. In addition to traditional applications in Li-S, Li-ion batteries, conductive electrodes, hydrogen storage, and fuel cells, the low lattice thermal conductivity coupled with high electron mobility in the semiconducting oxygen-functionalized MXene-$Ti_2CO_2$ has led to the recent interests in high-performance thermoelectric and nanoelectronic devices. Apart from the above dc-transport applications, it is crucial to also understand ac-transport across them, given the growing interest in applications surrounding wireless communications and transparent conductors. In this work, we investigate using our recently developed $ab~initio$ transport model, the real and imaginary components of electron mobility and conductivity to conclusively depict carrier transport beyond the room temperature for frequency ranges upto the terahertz range. We also contrast the carrier mobility and conductivity with respect to the Drude's model to depict its inaccuracies for a meaningful comparison with experiments. Our calculations show the effect of acoustic deformation potential scattering, piezoelectric scattering, and polar optical phonon scattering mechanisms. Without relying on experimental data, our model requires inputs calculated from first principles using density functional theory. Our results set the stage for providing ab-initio based ac-transport calculations given the current research on MXenes for high frequency applications.
△ Less
Submitted 27 January, 2023;
originally announced January 2023.
-
Advancing carrier transport models for InAs/GaSb type-II superlattice MWIR photodetectors
Authors:
Rohit Kumar,
Anup Kumar Mandia,
Anuja Singh,
Bhaskaran Muralidharan
Abstract:
In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in conjunction with the $\bf k.p$ band structure and the envelope function approximation for a detailed computation of the carrier mobility and conductivity of layered t…
▽ More
In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in conjunction with the $\bf k.p$ band structure and the envelope function approximation for a detailed computation of the carrier mobility and conductivity of layered type-II superlattice structures, using which, we unravel two crucial insights. First, the significance of both elastic and inelastic scattering mechanisms, particularly the influence of the interface roughness and polar optical phonon scattering mechanisms in technologically relevant superlattice structures. Second, that the structure-specific Hall mobility and Hall scattering factor reveals that temperature and carrier concentrations significantly affect the Hall scattering factor, which deviates significantly from unity even for small magnetic fields. This reinforces the caution that should be exercised when employing the Hall scattering factor in experimental estimations of drift mobilities and carrier concentrations. Our research hence offers a comprehensive microscopic understanding of carrier dynamics in such technologically relevant superlattices. Our models also provide highly accurate and precise transport parameters beyond the relaxation time approximation and thereby paving the way to develop physics-based device modules for mid-wavelength infrared photodetectors.
△ Less
Submitted 12 January, 2023;
originally announced January 2023.
-
Can magneto-transport properties provide insight into the functional groups in semiconducting MXenes?
Authors:
Namitha Anna Koshi,
Anup Kumar Mandia,
Bhaskaran Muralidharan,
Seung-Cheol Lee,
Satadeep Bhattacharjee
Abstract:
The Hall scattering factor of Sc2CF2, Sc2CO2 and Sc2C(OH)2 is calculated using Rode's iterative approach by solving the Boltzmann transport equation. This is carried out in conjunction with calculations based on density functional theory. The electrical transport in Sc2CF2, Sc2CO2, and Sc2C(OH)2 is modelled by accounting for both elastic (acoustic and piezoelectric) and inelastic (polar optical ph…
▽ More
The Hall scattering factor of Sc2CF2, Sc2CO2 and Sc2C(OH)2 is calculated using Rode's iterative approach by solving the Boltzmann transport equation. This is carried out in conjunction with calculations based on density functional theory. The electrical transport in Sc2CF2, Sc2CO2, and Sc2C(OH)2 is modelled by accounting for both elastic (acoustic and piezoelectric) and inelastic (polar optical phonon) scattering. Polar optical phonon (POP) scattering is the most significant mechanism in these MXenes. We observe that there is a window of carrier concentration where Hall factor acts dramatically; Sc2CF2 obtains an incredible high value of 2.49 while Sc2CO2 achieves a very small value of approximately 0.5, and Sc2C(OH)2 achieves the so called ideal value of 1. We propose in this paper that such Hall factor behaviour has significant promise in the field of surface group identification in MXenes, an issue that has long baffled researchers.
△ Less
Submitted 28 October, 2022;
originally announced October 2022.
-
Electrical and magneto transport in 2D semiconducting MXene Ti2CO2
Authors:
Anup Kumar Mandia,
Namitha Anna Koshi,
Bhaskaran Muralidharan,
Seung-Cheol Lee,
Satadeep Bhattacharjee
Abstract:
The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction with density functional theory based calculations, we demonstrate that the Hall scattering factor in electron-doped Ti2CO2 varies greatly with temperature and con…
▽ More
The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction with density functional theory based calculations, we demonstrate that the Hall scattering factor in electron-doped Ti2CO2 varies greatly with temperature and concentration, ranging from 0.2 to around 1.3 for weak magnetic fields. The electrical transport was modelled primarily using three scattering mechanisms: piezoelectric scattering, acoustic scattering, and polar optical phonons. Even though the mobility in this material is primarily limited by acoustic phonons, piezoelectric scattering also plays an important role which was not highlighted earlier.
△ Less
Submitted 10 May, 2022; v1 submitted 23 March, 2022;
originally announced March 2022.
-
Comprehensive studies on steady-state and transient electronic transport in In0.52Al0.48As
Authors:
Anup Kumar Mandia,
Bhaskaran Muralidharan,
Seung Cheol Lee,
Satadeep Bhattacharjee
Abstract:
High electron mobility transistors (HEMT) built using In\textsubscript{0.52}Al\textsubscript{0.48}As/In\textsubscript{0.53}Ga\textsubscript{0.47}As on InP substrates are a focus of considerable experimental studies due to their favourable performance for microwave, optical and digital applications. We present a detailed and comprehensive study of steady state and transient electronic transport in…
▽ More
High electron mobility transistors (HEMT) built using In\textsubscript{0.52}Al\textsubscript{0.48}As/In\textsubscript{0.53}Ga\textsubscript{0.47}As on InP substrates are a focus of considerable experimental studies due to their favourable performance for microwave, optical and digital applications. We present a detailed and comprehensive study of steady state and transient electronic transport in In\textsubscript{0.52}Al\textsubscript{0.48}As with the three valley model using the semi-classical ensemble Monte Carlo method and including all important scattering mechanisms. All electronic transport parameters such drift velocity, valley occupation, average electron energy, ionization coefficient and generation rate, electron effective mass, diffusion coefficient, energy and momentum relaxation time are extracted rigorously from the simulations. Using these, we present a complete characterization of the transient electronic transport showing the variation of drift velocity with distance and time. We have then estimated the optimal cut-off frequencies for various device lengths via the velocity overshoot effect. Our analysis shows that for device lengths shorter than $700$ nm, transient effects are significant and should be taken into account for optimal device designs. As a critical example, at length scales of around $100$ nm, we obtain a significant improvement in the cut-off frequency from $261$ GHz to $663$ GHz with the inclusion of transient effects. The field dependence of all extracted parameters here can prove to be helpful for further device analysis and design.
△ Less
Submitted 14 August, 2020;
originally announced August 2020.
-
Semi-classical electronic transport properties of ternary compound AlGaAs$_2$: Role of different scattering mechanisms
Authors:
Soubhik Chakrabarty,
Anup Kumar Mandia,
Bhaskaran Muralidharan,
Seung Cheol Lee,
Satadeep Bhattacharjee
Abstract:
We present a comprehensive investigation of semi-classical transport properties of n-type ternary compound AlGaAs2, using Rode's iterative method. Four scattering mechanisms, have been included in our transport calculation, namely, ionized impurity, piezoelectric, acoustic deformation and polar optical phonon (POP). The scattering rates have been calculated in terms of ab-initio parameters. We con…
▽ More
We present a comprehensive investigation of semi-classical transport properties of n-type ternary compound AlGaAs2, using Rode's iterative method. Four scattering mechanisms, have been included in our transport calculation, namely, ionized impurity, piezoelectric, acoustic deformation and polar optical phonon (POP). The scattering rates have been calculated in terms of ab-initio parameters. We consider AlGaAs2 to have two distinct crystal geometries, one in tetragonal phase (space group: ), while the other one having body centered tetragonal crystal structure (space group:). We have observed higher electron mobility in the body centered tetragonal phase, thereby making it more suitable for high mobility device application, over the tetragonal phase. In order to understand the differences in electron moblities for these two phases, curvatures of the E-k graph of the conduction bands for these phases have been compared. At room temperature, the dominant contribution in electron mobility was found to be provided by inelastic POP scattering. We have also noted that mobility is underestimated in relaxation time approximation as compared with the Rode's iterative approach.
△ Less
Submitted 27 September, 2019;
originally announced September 2019.
-
AMMCR: Ab-initio model for mobility and conductivity calculation by using Rode Algorithm
Authors:
Anup Kumar Mandia,
Bhaskaran Muralidharan,
Jung-Hae Choi,
Seung-Cheol Lee,
Satadeep Bhattacharjee
Abstract:
We present a module to calculate the mobility and conductivity of semi-conducting materials using Rode's algorithm. This module uses a variety of electronic structure inputs derived from the Density Functional Theory (DFT). We have demonstrated good agreement with experimental results for the case of Cadmium Sulfide (CdS). We also provide a comparison with the widely used method, the so called Rel…
▽ More
We present a module to calculate the mobility and conductivity of semi-conducting materials using Rode's algorithm. This module uses a variety of electronic structure inputs derived from the Density Functional Theory (DFT). We have demonstrated good agreement with experimental results for the case of Cadmium Sulfide (CdS). We also provide a comparison with the widely used method, the so called Relaxation Time Approximation (RTA) and demonstrated the improvisation of the results compared to RTA. The present version of the module is interfaced with Vienna ab-initio simulation package (VASP).
△ Less
Submitted 23 May, 2020; v1 submitted 18 July, 2019;
originally announced July 2019.
-
Ab-initio semi-classical electronic transport in ZnSe: The role of inelastic scattering mechanisms
Authors:
Anup Kumar Mandia,
Renuka Patnaik,
Bhaskaran Muralidharan,
Seung-Cheol Lee,
Satadeep Bhattacharjee
Abstract:
We present a detailed ab-initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and polar optical phonon scattering and their relative importance at low and room temperature for various n-ZnSe samples are discussed in depth. We have clearly noted that inelastic polar optical phonon scattering is the most…
▽ More
We present a detailed ab-initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and polar optical phonon scattering and their relative importance at low and room temperature for various n-ZnSe samples are discussed in depth. We have clearly noted that inelastic polar optical phonon scattering is the most dominant scattering mechanism over most of the temperature region. Our results are in good agreement with the experimental data for the mobility and conductivity obtained at different do** concentrations over a wider range of temperatures. Also we compare these results with the ones obtained with relaxation time approximation (RTA) which clearly demonstrate the superiority of the iterative method over RTA.
△ Less
Submitted 22 May, 2019; v1 submitted 6 October, 2018;
originally announced October 2018.
