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Integration of High-Tc Superconductors with High Q Factor Oxide Mechanical Resonators
Authors:
Nicola Manca,
Alexei Kalaboukhov,
Alejandro E. Plaza,
Leonélio Cichetto Jr,
Emilio Bellingeri,
Francesco Bisio,
Floriana Lombardi,
Daniele Marré,
Luca Pellegrino
Abstract:
Micro-mechanical resonators are building blocks of a variety of applications in basic science and applied electronics. This device technology is mainly based on well-established and reproducible silicon-based fabrication processes with outstanding performances in term of mechanical Q factor and sensitivity to external perturbations. Broadening the functionalities of MEMS by the integration of func…
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Micro-mechanical resonators are building blocks of a variety of applications in basic science and applied electronics. This device technology is mainly based on well-established and reproducible silicon-based fabrication processes with outstanding performances in term of mechanical Q factor and sensitivity to external perturbations. Broadening the functionalities of MEMS by the integration of functional materials is a key step for both applied and fundamental science. However, combining functional materials and silicon-based compounds is challenging. An alternative approach is fabricating MEMS based on complex heterostructures made of materials inherently showing a variety of physical properties such as transition metal oxides. Here, we report on the integration of a high-Tc superconductor YBa2Cu3O7 (YBCO) with high Q factor micro-bridge resonator made of a single-crystal LaAlO3 (LAO) thin film. LAO resonators are tensile strained, with a stress of 345 MPa, show Q factor in the range of tens of thousands, and have low roughness. The topmost YBCO layer deposited by Pulse Laser Deposition shows a superconducting transition starting at 90 K with zero resistance below 78 K. This result opens new possibilities towards the development of advanced transducers, such as bolometers or magnetic field detectors, as well as basic science experiments in solid state physics, material science, and quantum opto-mechanics.
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Submitted 23 January, 2024;
originally announced January 2024.
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Strain, Young's modulus, and structural transition of EuTiO3 thin films probed by micro-mechanical methods
Authors:
Nicola Manca,
Gaia Tarsi,
Alexei Kalaboukhov,
Francesco Bisio,
Federico Caglieris,
Floriana Lombardi,
Daniele Marré,
Luca Pellegrino
Abstract:
EuTiO3 (ETO) is a well-known complex oxide mainly investigated for its magnetic properties and its incipient ferro-electricity. In this work, we demonstrate the realization of suspended micro-mechanical structures, such as cantilevers and micro-bridges, from 100 nm-thick single-crystal epitaxial ETO films deposited on top of SrTiO3(100) substrates. By combining profile analysis and resonance frequ…
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EuTiO3 (ETO) is a well-known complex oxide mainly investigated for its magnetic properties and its incipient ferro-electricity. In this work, we demonstrate the realization of suspended micro-mechanical structures, such as cantilevers and micro-bridges, from 100 nm-thick single-crystal epitaxial ETO films deposited on top of SrTiO3(100) substrates. By combining profile analysis and resonance frequency measurements of these devices, we obtain the Young's modulus, strain, and strain gradients of the ETO thin films. Moreover, we investigate the ETO anti-ferro-distorsive transition by temperature-dependent characterizations, which show a non-monotonic and hysteretic mechanical response. Comparison between experimental and literature data allows us to weight the contribution from thermal expansion and softening to the tuning slope, while a full understanding of the origin of such a wide hysteresis is still missing. We also discuss the influence of oxygen vacancies on the reported mechanical properties by comparing stoichiometric and oxygen-deficient samples.
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Submitted 6 October, 2023; v1 submitted 3 July, 2023;
originally announced July 2023.
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Investigation and field effect tuning of thermoelectric properties of SnSe2 flakes
Authors:
I. Pallecchi,
F. Caglieris,
M. Ceccardi,
N. Manca,
D. Marre',
L. Repetto,
M. Schott,
D. I. Bilc,
S. Chaitoglou,
A. Dimoulas,
M. J. Verstraete
Abstract:
The family of Van der Waals dichalcogenides (VdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by higher integration and interfaces which are atomically sharper and cleaner than conventional electronics. Among these functionalities, some VdWDs possess remar…
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The family of Van der Waals dichalcogenides (VdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by higher integration and interfaces which are atomically sharper and cleaner than conventional electronics. Among these functionalities, some VdWDs possess remarkable thermoelectric properties. SnSe2 has been identified as a promising thermoelectric material on the basis of its estimated electronic and transport properties. In this work we carry out experimental meas-urements of the electric and thermoelectric properties of SnSe2 flakes. For a 30 micron thick SnSe2 flake at room temperature, we measure electron mobility of 40 cm^2 V^-1 s^-1, a carrier density of 4 x 10^18 cm^-3, a Seebeck coefficient S around -400 microV/K and thermoelectric power factor around 0.35 mW m^-1 K^-2. The comparison of experimental results with theoretical calculations shows fair agreement and indicates that the dominant carrier scattering mechanisms are polar optical phonons at room temperature and ionized im-purities below 50 K. In order to explore possible improvement of the thermoelectric properties, we carry out reversible electrostatic do** on a thinner flake, in a field effect setup. On this 75 nm thick SnSe2 flake, we measure a field effect variation of the Seebeck coefficient of up to 290 % at low temperature, and a corresponding variation of the thermoelectric power factor of up to 1050 %. We find that the power factor increases with the depletion of n-type charge carriers. Field effect control of thermoelectric transport opens perspectives for boosting energy harvesting and novel switching technologies based on two-dimensional materials.
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Submitted 28 April, 2023;
originally announced April 2023.
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The role of etching anisotropy in the fabrication of freestanding oxide microstructures on SrTiO3(100), SrTiO3(110), and SrTiO3(111) substrates
Authors:
Alejandro Plaza,
Nicola Manca,
Cristina Bernini,
Daniele Marré,
Luca Pellegrino
Abstract:
The release process for the fabrication of freestanding oxide microstructures relies on appropriate, controllable and repeatable wet etching procedures. SrTiO3 is among the most employed substrates for oxide thin films growth and can be decomposed in HF:water solution. Such process is strongly anisotropic and is affected by local defects and substrate cut-plane. We analyze the etching behavior of…
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The release process for the fabrication of freestanding oxide microstructures relies on appropriate, controllable and repeatable wet etching procedures. SrTiO3 is among the most employed substrates for oxide thin films growth and can be decomposed in HF:water solution. Such process is strongly anisotropic and is affected by local defects and substrate cut-plane. We analyze the etching behavior of SrTiO3 substrates having (100), (110), and (111) cut-planes during immersion in a 5% HF:water solution. The etching process over the three substrates is compared in terms of pitting, anisotropy, macroscopic etch rate and underetching effects around HF-resistant (La,Sr)MnO3 thin film micropatterns. The release of targeted structures, such as the reported (La,Sr)MnO3 freestanding microbridges, depends on the substrate crystallographic symmetry and on the in-plane orientation of the structures themselves along the planar directions. By comparing the etching evolution at two different length scales, we distinguish two regimes for the propagation of the etching front: an intrinsic one, owning to a specific lattice direction, and a macroscopic one, resulting from the mixing of different etching fronts. We report the morphologies of the etched SrTiO3 surfaces and the geometries of the underetched regions as well as of the microbridge clam** zones. The reported analysis will enable the design of complex MEMS devices by allowing to model the evolution of the etching process required for the release of arbitrary structures made of oxide thin films deposited on top of STO.
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Submitted 20 July, 2021;
originally announced July 2021.
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Large tunability of strain in WO3 single-crystal microresonators controlled by exposure to H2 gas
Authors:
Nicola Manca,
Giordano Mattoni,
Marco Pelassa,
Warner J. Venstra,
Herre S. J. van der Zant,
Andrea D. Caviglia
Abstract:
Strain engineering is one of the most effective approaches to manipulate the physical state of materials, control their electronic properties, and enable crucial functionalities. Because of their rich phase diagrams arising from competing ground states, quantum materials are an ideal playground for on-demand material control, and can be used to develop emergent technologies, such as adaptive elect…
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Strain engineering is one of the most effective approaches to manipulate the physical state of materials, control their electronic properties, and enable crucial functionalities. Because of their rich phase diagrams arising from competing ground states, quantum materials are an ideal playground for on-demand material control, and can be used to develop emergent technologies, such as adaptive electronics or neuromorphic computing. It was recently suggested that complex oxides could bring unprecedented functionalities to the field of nanomechanics, but the possibility of precisely controlling the stress state of materials is so far lacking. Here we demonstrate the wide and reversible manipulation of the stress state of single-crystal WO3 by strain engineering controlled by catalytic hydrogenation. Progressive incorporation of hydrogen in freestanding ultra-thin structures determines large variations of their mechanical resonance frequencies and induces static deformation. Our results demonstrate hydrogen do** as a new paradigm to reversibly manipulate the mechanical properties of nanodevices based on materials control.
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Submitted 15 June, 2021;
originally announced June 2021.
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Bringing GNU Emacs to Native Code
Authors:
Andrea Corallo,
Luca Nassi,
Nicola Manca
Abstract:
Emacs Lisp (Elisp) is the Lisp dialect used by the Emacs text editor family. GNU Emacs can currently execute Elisp code either interpreted or byte-interpreted after it has been compiled to byte-code. In this work we discuss the implementation of an optimizing compiler approach for Elisp targeting native code. The native compiler employs the byte-compiler's internal representation as input and expl…
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Emacs Lisp (Elisp) is the Lisp dialect used by the Emacs text editor family. GNU Emacs can currently execute Elisp code either interpreted or byte-interpreted after it has been compiled to byte-code. In this work we discuss the implementation of an optimizing compiler approach for Elisp targeting native code. The native compiler employs the byte-compiler's internal representation as input and exploits libgccjit to achieve code generation using the GNU Compiler Collection (GCC) infrastructure. Generated executables are stored as binary files and can be loaded and unloaded dynamically. Most of the functionality of the compiler is written in Elisp itself, including several optimization passes, paired with a C back-end to interface with the GNU Emacs core and libgccjit. Though still a work in progress, our implementation is able to bootstrap a functional Emacs and compile all lexically scoped Elisp files, including the whole GNU Emacs Lisp Package Archive (ELPA). Native-compiled Elisp shows an increase of performance ranging from 2.3x up to 42x with respect to the equivalent byte-code, measured over a set of small benchmarks.
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Submitted 6 April, 2020;
originally announced April 2020.
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Coupling lattice instabilities across the interface in ultrathin oxide heterostructures
Authors:
T. C. van Thiel,
J. Fowlie,
C. Autieri,
N. Manca,
M. Šiškins,
D. Afanasiev,
S. Gariglio,
A. D. Caviglia
Abstract:
Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of…
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Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of $\text{SrIrO}_3$, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, $\text{SrIrO}_3$ orthorhombic domains couple directly to tetragonal domains in $\text{SrTiO}_3$. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the $\text{SrIrO}_3$ film. The close proximity to the metal-insulator transition in ultrathin $\text{SrIrO}_3$ causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure-property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures.
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Submitted 24 February, 2020;
originally announced February 2020.
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Anisotropic magnetoresistance in spin-orbit semimetal SrIrO3
Authors:
Dirk J. Groenendijk,
Nicola Manca,
Joeri de Bruijckere,
Ana Mafalda R. V. L. Monteiro,
Rocco Gaudenzi,
Herre S. J. van der Zant,
Andrea D. Caviglia
Abstract:
SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic magnetoresistance (AMR) of SrIrO3 thin films, which is closely linked to spin-orbit coupling and probes correlations between electronic transport, magnetic order and or…
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SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic magnetoresistance (AMR) of SrIrO3 thin films, which is closely linked to spin-orbit coupling and probes correlations between electronic transport, magnetic order and orbital states. We show that the low-temperature negative magnetoresistance is anisotropic with respect to the magnetic field orientation, and its angular dependence reveals the appearance of a fourfold symmetric component above a critical magnetic field. We show that this AMR component is of magnetocrystalline origin, and attribute the observed transition to a field-induced magnetic state in SrIrO3.
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Submitted 24 January, 2020;
originally announced January 2020.
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Bimodal Phase Diagram of the Superfluid Density in LaAlO3/SrTiO3 Revealed by an Interfacial Waveguide Resonator
Authors:
Nicola Manca,
Daniel Bothner,
Ana M. R. V. L. Monteiro,
Dejan Davidovikj,
Yildiz G. Sağlam,
Mark Jenkins,
Marc Gabay,
Gary A. Steele,
Andrea D. Caviglia
Abstract:
We explore the superconducting phase diagram of the two-dimensional electron system at the LaAlO3/SrTiO3 interface by monitoring the frequencies of the cavity modes of a coplanar waveguide resonator fabricated in the interface itself. We determine the phase diagram of the superconducting transition as a function of temperature and electrostatic gating, finding that both the superfluid density and…
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We explore the superconducting phase diagram of the two-dimensional electron system at the LaAlO3/SrTiO3 interface by monitoring the frequencies of the cavity modes of a coplanar waveguide resonator fabricated in the interface itself. We determine the phase diagram of the superconducting transition as a function of temperature and electrostatic gating, finding that both the superfluid density and the transition temperature follow a dome shape, but that the two are not monotonically related. The ground state of this 2DES is interpreted as a Josephson junction array, where a transition from long- to short-range order occurs as a function of the electronic do**. The synergy between correlated oxides and superconducting circuits is revealed to be a promising route to investigate these exotic compounds, complementary to standard magneto-transport measurements.
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Submitted 31 January, 2019; v1 submitted 28 September, 2018;
originally announced September 2018.
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Balanced electron-hole transport in spin-orbit semimetal SrIrO3 heterostructures
Authors:
Nicola Manca,
Dirk J. Groenendijk,
Ilaria Pallecchi,
Carmine Autieri,
Lucas M. K. Tang,
Francesca Telesio,
Giordano Mattoni,
Alix McCollam,
Silvia Picozzi,
Andrea D. Caviglia
Abstract:
Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5d oxide SrIrO3 hosts parabolic bands of heavy holes and light elec…
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Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5d oxide SrIrO3 hosts parabolic bands of heavy holes and light electrons in gapped Dirac cones due to the interplay between electron-electron interactions and spin-orbit coupling. We present a multifold approach relying on different experimental techniques and theoretical calculations to disentangle its complex electronic properties. By combining magnetotransport and thermoelectric measurements in a field-effect geometry with first-principles calculations, we quantitatively determine the transport coefficients of different conduction channels. Despite their different dispersion relationships, electrons and holes are found to have strikingly similar transport coefficients, yielding a holelike response under field-effect and thermoelectric measurements and a linear, electronlike Hall effect up to 33 T.
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Submitted 16 February, 2018; v1 submitted 14 November, 2017;
originally announced November 2017.
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Charge do** and large lattice expansion in oxygen-deficient heteroepitaxial WO3
Authors:
Giordano Mattoni,
Alessio Filippetti,
Nicola Manca,
Pavlo Zubko,
Andrea D. Caviglia
Abstract:
Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are particularly appealing, taking advantage from high surface-to-volume ratio and tunable physical properties. However, the growth of stoichiometric, crystalline thin…
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Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are particularly appealing, taking advantage from high surface-to-volume ratio and tunable physical properties. However, the growth of stoichiometric, crystalline thin films is challenging because the deposition conditions are very sensitive to the formation of oxygen vacancies. In this work, we show how background oxygen pressure during pulsed laser deposition can be used to tune the structural and electronic properties of WO3 thin films. By performing X-ray diffraction and low-temperature transport measurements, we find changes in WO3 lattice volume up to 10%, concomitantly with an insulator-to-metal transition as a function of increased level of electron do**. We use advanced ab initio calculations to describe in detail the properties of the oxygen vacancy defect states, and their evolution in terms of excess charge concentration. Our results depict an intriguing scenario where structural, electronic, optical, and transport properties of WO3 single-crystal thin films can all be purposely tuned by a suited control of oxygen vacancies formation during growth.
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Submitted 14 November, 2017;
originally announced November 2017.
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Superconducting quantum point contact with split gates in the two dimensional LaAlO3/SrTiO3 superfluid
Authors:
Holger Thierschmann,
Emre Mulazimoglu,
Nicola Manca,
Srijit Goswami,
Teun M. Klapwijk,
Andrea D. Caviglia
Abstract:
One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact formed with split gates in GaAs/AlGaAs heterostructures. Being carried out on a single material, they represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel with certain transmission coefficients. It has been a long standin…
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One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact formed with split gates in GaAs/AlGaAs heterostructures. Being carried out on a single material, they represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel with certain transmission coefficients. It has been a long standing goal to achieve similar experimental conditions also in superconductors, only reached in atomic scale mechanically tunable break junctions of conventional superconducting metals, but here the Fermi wavelength is so short that it leads to a mixing of quantum transport with atomic orbital physics. Here we demonstrate for the first time the formation of a superconducting quantum point contact (SQPC) with split gate technology in a superconductor, utilizing the unique gate tunability of the two dimensional superfluid at the LaAlO3/SrTiO3 (LAO/STO) interface. When the constriction is tuned through the action of metallic split gates we identify three regimes of transport: (i) SQPC for which the supercurrent is carried only by a few quantum transport channels. (ii) Superconducting island strongly coupled to the equilibrium reservoirs. (iii) Charge island with a discrete spectrum weakly coupled to the reservoirs. Our experiments demonstrate the feasibility of a new generation of mesoscopic all-superconductor quantum transport devices.
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Submitted 2 October, 2017;
originally announced October 2017.
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Spin-orbit semimetal SrIrO$_3$ in the two-dimensional limit
Authors:
D. J. Groenendijk,
C. Autieri,
J. Girovsky,
M. Carmen Martinez-Velarte,
N. Manca,
G. Mattoni,
A. M. R. V. L. Monteiro,
N. Gauquelin,
J. Verbeeck,
A. F. Otte,
M. Gabay,
S. Picozzi,
A. D. Caviglia
Abstract:
We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by sc…
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We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by scanning tunneling spectroscopy, showing that 4 unit cells SrIrO$_3$ is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO$_3$ is accompanied by antiferromagnetic order.
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Submitted 27 June, 2017;
originally announced June 2017.
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Selective high frequency mechanical actuation driven by the VO2 electronic instability
Authors:
Nicola Manca,
Luca Pellegrino,
Teruo Kanki,
Warner J. Venstra,
Giordano Mattoni,
Yoshiyuki Higuchi,
Hidekazu Tanaka,
Andrea D. Caviglia,
Daniele Marré
Abstract:
Micro- and nano-electromechanical resonators are a fundamental building block of modern technology, used in environmental monitoring, robotics, medical tools as well as fundamental science. These devices rely on dedicated electronics to generate their driving signal, resulting in an increased complexity and size. Here, we present a new paradigm to achieve high-frequency mechanical actuation based…
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Micro- and nano-electromechanical resonators are a fundamental building block of modern technology, used in environmental monitoring, robotics, medical tools as well as fundamental science. These devices rely on dedicated electronics to generate their driving signal, resulting in an increased complexity and size. Here, we present a new paradigm to achieve high-frequency mechanical actuation based on the metal-insulator transition of VO$\mathrm{_2}$, where the steep variation of its electronic properties enables to realize high-frequency electrical oscillations. The dual nature of this phase change, which is both electronic and structural, turns the electrical oscillations into an intrinsic actuation mechanism, powered by a small DC voltage and capable to selectively excite the different mechanical modes of a microstructure. Our results pave the way towards the realization of micro- and nano-electro-mechanical systems with autonomous actuation from integrated DC power sources such as solar cells or micro-batteries.
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Submitted 18 September, 2017; v1 submitted 15 March, 2017;
originally announced April 2017.
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Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers
Authors:
Giordano Mattoni,
David J. Baek,
Nicola Manca,
Nils Verhagen,
Lena F. Kourkoutis,
Alessio Filippetti,
Andrea D. Caviglia
Abstract:
Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the most studied in this regard, and its origin is determined by both the presence of a polar field in LaAlO3 and the insurgence of point defects, such as oxygen vacan…
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Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the most studied in this regard, and its origin is determined by both the presence of a polar field in LaAlO3 and the insurgence of point defects, such as oxygen vacancies and intermixed cations. These defects usually reside in the conduction channel and are responsible for a decreased electronic mobility. In this work we use an amorphous WO3 overlayer to control the defect formation and obtain an increased electron mobility and effective mass in WO3/LaAlO3/SrTiO3 heterostructures. The studied system shows a sharp insulator-to-metal transition as a function of both LaAlO3 and WO3 layer thickness. Low-temperature magnetotransport reveals a strong magnetoresistance reaching 900% at 10 T and 1.5 K, the presence of multiple conduction channels with carrier mobility up to 80 000 cm2/Vs and an unusually high effective mass of 5.6 me. The amorphous character of the WO3 overlayer makes this a versatile approach for defect control at oxide interfaces, which could be applied to other heterestrostures disregarding the constraints imposed by crystal symmetry.
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Submitted 21 April, 2017;
originally announced April 2017.
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Programmable Mechanical Resonances in MEMS by Localized Joule Heating of Phase Change Materials
Authors:
Nicola Manca,
Luca Pellegrino,
Teruo Kanki,
Syouta Yamasaki,
Hidekazu Tanaka,
Antonio Sergio Siri,
Daniele Marré
Abstract:
A programmable micromechanical resonator based on a VO2 thin film is reported. Multiple mechanical eigenfrequency states are programmed using Joule heating as local power source, gradually driving the phase transition of VO2 around its Metal-Insulator transition temperature. Phase coexistence of domains is used to tune the stiffness of the device via local control of internal stresses and mechanic…
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A programmable micromechanical resonator based on a VO2 thin film is reported. Multiple mechanical eigenfrequency states are programmed using Joule heating as local power source, gradually driving the phase transition of VO2 around its Metal-Insulator transition temperature. Phase coexistence of domains is used to tune the stiffness of the device via local control of internal stresses and mechanical properties. This study opens perspectives for develo** mechanically configurable nanostructure arrays.
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Submitted 7 February, 2017;
originally announced February 2017.
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Reversible oxygen vacancies do** in (La$_{0.7}$,Sr$_{0.3}$)MnO$_3$ microbridges by combined self-heating and electromigration
Authors:
Nicola Manca,
Luca Pellegrino,
Daniele Marré
Abstract:
Combination of electric fields and Joule self-heating is used to change the oxygen stoichiometry and promote oxygen vacancy drift in a free-standing $\mathrm{(La,Sr)MnO_3}$ thin film microbridge placed in controlled atmosphere. By controlling the local oxygen vacancies concentration, we can reversibly switch our LSMO-based microbridges from metallic to insulating behavior on timescales lower than…
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Combination of electric fields and Joule self-heating is used to change the oxygen stoichiometry and promote oxygen vacancy drift in a free-standing $\mathrm{(La,Sr)MnO_3}$ thin film microbridge placed in controlled atmosphere. By controlling the local oxygen vacancies concentration, we can reversibly switch our LSMO-based microbridges from metallic to insulating behavior on timescales lower than 1 s and with small applied voltages (<5 V). The strong temperature gradients given by the microbridge geometry strongly confine the motion of oxygen vacancies, limiting the modified region within the free-standing area. Multiple resistive states can be set by selected current pulses that determine different oxygen vacancies profiles within the device . Qualitative analysis of device operation is also provided with the support of Finite Element Analysis.
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Submitted 2 February, 2017;
originally announced February 2017.
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Influence of thermal boundary conditions on the current-driven resistive transition in $\mathbf{VO_2}$ microbridges
Authors:
Nicola Manca,
Teruo Kanki,
Hidekazu Tanaka,
Daniele Marré,
Luca Pellegrino
Abstract:
We investigate the resistive switching behaviour of $\mathrm{VO_2}$ microbridges under current bias as a function of temperature and thermal coupling with the heat bath. Upon increasing the electrical current bias, the formation of the metallic phase can progress smoothly or through sharp jumps. The magnitude and threshold current values of these sharp resistance drops show random behaviour and ar…
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We investigate the resistive switching behaviour of $\mathrm{VO_2}$ microbridges under current bias as a function of temperature and thermal coupling with the heat bath. Upon increasing the electrical current bias, the formation of the metallic phase can progress smoothly or through sharp jumps. The magnitude and threshold current values of these sharp resistance drops show random behaviour and are dramatically influenced by thermal dissipation conditions. Our results also evidence how the propagation of the metallic phase induced by electrical current in $\mathrm{VO_2}$, and thus the shape of the resulting high-conductivity path, are not predictable. We discuss the origin of the switching events through a simple electro-thermal model based on the domain structure of $\mathrm{VO_2}$ films that can be useful to improve the stability and controllability of future $\mathrm{VO_2}$-based devices.
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Submitted 2 February, 2017;
originally announced February 2017.
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Side gate tunable Josephson junctions at the LaAlO$_3$/SrTiO$_3$ interface
Authors:
A. M. R. V. L. Monteiro,
D. J. Groenendijk,
N. Manca,
E. Mulazimoglu,
S. Goswami,
Ya. Blanter,
L. M. K. Vandersypen,
A. D. Caviglia
Abstract:
Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO$_3$/SrTiO$_3$ interface as a model system, we employ a single-step lithographic process to realize gate tunable Josephson junctions through a combination of lateral confinement and local side gating. The acti…
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Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO$_3$/SrTiO$_3$ interface as a model system, we employ a single-step lithographic process to realize gate tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.
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Submitted 19 January, 2017; v1 submitted 12 September, 2016;
originally announced September 2016.
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Quantum paraelectricity probed by superconducting resonators
Authors:
Dejan Davidovikj,
Nicola Manca,
Herre S. J. van der Zant,
Andrea D. Caviglia,
Gary A. Steele
Abstract:
Superconducting coplanar waveguide (CPW), resonators are powerful and versatile tools used in areas ranging from radiation detection to circuit quantum electrodynamics. Their potential for low intrinsic losses makes them attractive as sensitive probes of electronic properties of bulk materials and thin films. Here we use superconducting MoRe CPW resonators, to investigate the high-frequency (up to…
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Superconducting coplanar waveguide (CPW), resonators are powerful and versatile tools used in areas ranging from radiation detection to circuit quantum electrodynamics. Their potential for low intrinsic losses makes them attractive as sensitive probes of electronic properties of bulk materials and thin films. Here we use superconducting MoRe CPW resonators, to investigate the high-frequency (up to 0.3 GHz) and low temperature (down to 3.5 K) permittivity of SrTiO3, a non-linear dielectric on the verge of a ferroelectric transition (quantum paraelectricity). We perform a quantitative analysis of its dielectric properties as a function of external dc bias (up to +-15V), rf power and mode number and discuss our results within the framework of the most recent theoretical models. We also discuss the origin of a fatigue effect that reduces the tunability of the dielectric constant of SrTiO3, which we relate to the presence of oxygen vacancies.
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Submitted 24 May, 2017; v1 submitted 27 July, 2016;
originally announced July 2016.
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Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures
Authors:
D. J. Groenendijk,
N. Manca,
G. Mattoni,
L. Kootstra,
S. Gariglio,
Y. Huang,
E. van Heumen,
A. D. Caviglia
Abstract:
Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modifica…
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Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices.
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Submitted 5 August, 2016; v1 submitted 9 May, 2016;
originally announced May 2016.
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Striped nanoscale phase separation at the metal-insulator transition of heteroepitaxial nickelates
Authors:
Giordano Mattoni,
Pavlo Zubko,
Francesco Maccherozzi,
Alexander J. H. van der Torren,
Daan B. Boltje,
Marios Hadjimichael,
Nicola Manca,
Sara Catalano,
Marta Gibert,
Yanwei Liu,
Jan Aarts,
Jean-Marc Triscone,
Sarnjeet S. Dhesi,
Andrea D. Caviglia
Abstract:
Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscal…
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Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscale formation and growth of insulating domains across the temperature-driven MIT in NdNiO3 epitaxial thin films. Heteroepitaxy is found to strongly determine the nanoscale nature of the phase transition, inducing preferential formation of striped domains along the terraces of atomically flat stepped surfaces. We show that the distribution of transition temperatures is an intrinsic local property, set by surface morphology and stable across multiple temperature cycles. Our data provides new insights into the MIT of heteroepitaxial nickelates and points to a rich, nanoscale phenomenology in this strongly correlated material.
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Submitted 16 November, 2016; v1 submitted 14 February, 2016;
originally announced February 2016.
