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Energy Barriers for Thermally Activated Magnetization Reversal in Perpendicularly Magnetized Nanodisks in a Transverse Field
Authors:
Corrado Carlo Maria Capriata,
Bengt Gunnar Malm,
Andrew D. Kent,
Gabriel D. Chaves-O'Flynn
Abstract:
Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of a perpendicularly magnetized MTJ (pMTJ) can lower the energy barrier ($E_b$) to these transitions leading to faster fluctuations. In this study, we present ana…
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Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of a perpendicularly magnetized MTJ (pMTJ) can lower the energy barrier ($E_b$) to these transitions leading to faster fluctuations. In this study, we present analytical and numerical calculations of $E_b$ considering both coherent (macrospin) reversal and non-uniform wall-mediated magnetization reversal for a selection of nanodisk diameters and applied fields. Non-uniform reversal processes dominate for larger diameters, and our numerical calculations of $E_b$ using the String method show that the transition state has a sigmoidal magnetization profile. The latter can be described with an analytical expression that depends on only one spatial dimension, parallel to the applied field, which is also the preferred direction of profile motion during reversal. Our results provide nanodisk energy barriers as a function of the transverse field, nanodisk diameter, and material characteristics, which are useful for designing stochastic bitstreams.
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Submitted 23 May, 2023; v1 submitted 16 May, 2023;
originally announced May 2023.
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Stochastic magnetic actuated random transducer devices based on perpendicular magnetic tunnel junctions
Authors:
Laura Rehm,
Corrado Carlo Maria Capriata,
Misra Shashank,
J. Darby Smith,
Mustafa Pinarbasi,
B. Gunnar Malm,
Andrew D. Kent
Abstract:
True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpendicular magnetic tunnel junction nanopillars (pMTJs) activated by short duration (ns) pulses in the ballistic limit for such applications. In this limit, a pulse can transform the Boltzmann distribution of initial free…
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True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpendicular magnetic tunnel junction nanopillars (pMTJs) activated by short duration (ns) pulses in the ballistic limit for such applications. In this limit, a pulse can transform the Boltzmann distribution of initial free layer magnetization states into randomly magnetized down or up states, i.e. a bit that is 0 or 1, easily determined by measurement of the junction's tunnel resistance. It is demonstrated that bitstreams with millions of events: 1) are very well described by the binomial distribution; 2) can be used to create a uniform distribution of 8-bit random numbers; 3) pass multiple statistical tests for true randomness, including all the National Institute of Standards tests for random number generators with only one XOR operation; and 4) can have no drift in the bit probability with time. The results presented here show that pMTJs operated in the ballistic regime can generate true random numbers at GHz bitrates, while being more robust to environmental changes, such as their operating temperature, compared to other stochastic nanomagnetic devices.
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Submitted 15 September, 2022; v1 submitted 3 September, 2022;
originally announced September 2022.
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Frequency Stability of Spin-Hall Nano-Oscillators with Realistic Grain Structure
Authors:
Corrado Carlo Maria Capriata,
Sheng Jiang,
Mykola Dvornik,
Johan Åkerman,
Bengt Gunnar Malm
Abstract:
Nano-constriction spin-Hall nano-oscillators (NC-SHNOs) are one of the most promising alternatives among the microwave spintronics devices. They can provide highly coherent and widely tuneable microwave signals and can be fabricated at low temperatures, which makes them compatible with back-end-of-the-line CMOS processing. For its applications, the frequency stability of each device is crucial, in…
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Nano-constriction spin-Hall nano-oscillators (NC-SHNOs) are one of the most promising alternatives among the microwave spintronics devices. They can provide highly coherent and widely tuneable microwave signals and can be fabricated at low temperatures, which makes them compatible with back-end-of-the-line CMOS processing. For its applications, the frequency stability of each device is crucial, in particular for synchronization of oscillator arrays. In this work, we focus on the influence of a realistic grain structure on the SHNO frequency stability using both measurements as well as micromagnetic simulations. Grains in the thin ferromagnetic metal films can influence the output characteristic of the SHNO since the exchange coupling is reduced locally at the grain boundaries. This work provides a novel micromagnetic simulation method, for systematic investigation of frequency instability or variability from device-to-device. Experimentally, a device-to-device frequency variability of ~270 MHz was found and in some extreme cases, a double-mode oscillation was observed in the high current operation range. This oscillation behavior was reproduced in simulations, where the inclusion of grains resulted in a frequency variability of ~100 MHz and double-mode oscillations for some particular configurations. The double modes are consistent with a partial decoupling, or non-coherent operation, of two oscillating regions located at the nano-constriction edges.
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Submitted 14 December, 2020;
originally announced December 2020.
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Impact of intra-grain spin wave reflections on nano-contact spin torque oscillators
Authors:
Anders J. Eklund,
Mykola Dvornik,
Fatjon Qejvanaj,
Sheng Jiang,
Sunjae Chung,
Johan Åkerman,
B. Gunnar Malm
Abstract:
We investigate the origin of the experimentally observed varying current-frequency nonlinearity of the propagating spin wave mode in nano-contact spin torque oscillators. Nominally identical devices with 100 nm diameter are characterized by electrical microwave measurements and show large variation in the generated frequency as a function of drive current. This quantitative and qualitative device-…
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We investigate the origin of the experimentally observed varying current-frequency nonlinearity of the propagating spin wave mode in nano-contact spin torque oscillators. Nominally identical devices with 100 nm diameter are characterized by electrical microwave measurements and show large variation in the generated frequency as a function of drive current. This quantitative and qualitative device-to-device variation is described in terms of continuous and discontinuous nonlinear transitions between linear current intervals. The thin film grain microstructure in our samples is determined using atomic force and scanning electron microscopy to be on the scale of 30 nm. Micromagnetic simulations show that the reflection of spin waves against the grain boundaries results in standing wave resonance configurations. For a simulated device with a single artificial grain, the frequency increases linearly with the drive current until the decreased wavelength eventually forces another spin wave anti-node to be formed. This transition results in a discontinuous step in the frequency versus current relation. Simulations of complete, randomly generated grain microstructures additionally shows continuous nonlinearity and a resulting device-to-device variation in frequency that is similar to the experimental levels. The impact of temperature from 4 K to 300 K on the resonance mode-transition nonlinearity and frequency noise is investigated using simulations and it is found that the peak levels of the spectral linewidth as a function of drive current agrees quantitatively with typical levels found in experiments at room temperature.
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Submitted 19 August, 2020;
originally announced August 2020.
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Micromagnetic Modeling of Telegraphic Mode Jum** in Microwave Spin Torque Oscillators
Authors:
B. Gunnar Malm,
Anders Eklund,
Mykola Dvornik
Abstract:
The time domain stability of microwave spin torque oscillators (STOs) has been investigated by systematic micromagnetic simulations. A model based on internal spin wave reflection at grain boundaries with reduced exchange coupling was implemented and used to study the oscillator under quasi-stable operating conditions. Telegraphic mode jum** between two operating frequencies (23.3 and 24.1 GHz)…
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The time domain stability of microwave spin torque oscillators (STOs) has been investigated by systematic micromagnetic simulations. A model based on internal spin wave reflection at grain boundaries with reduced exchange coupling was implemented and used to study the oscillator under quasi-stable operating conditions. Telegraphic mode jum** between two operating frequencies (23.3 and 24.1 GHz) was observed in the time domain with characteristic dwell times in the range of 10-100 ns. The oscillating volume was shown to have a different shape at the distinct operating frequencies. The shape difference is governed by spin wave reflections at the grain boundaries. The resulting non-linear behavior of the oscillator was shown to be a collective effect of spin wave scattering at different locations within a few spin wavelengths from the nano-contact.
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Submitted 18 September, 2019;
originally announced September 2019.
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Spin-Torque and Spin-Hall Nano-Oscillators
Authors:
Tingsu Chen,
Randy K. Dumas,
Anders Eklund,
Pranaba K. Muduli,
Afhin Houshang,
Ahmad A. Awad,
Philipp Dürrenfeld,
B. Gunnar Malm,
Ana Rusu,
Johan Åkerman
Abstract:
This paper reviews the state of the art in spin-torque and spin Hall effect driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the…
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This paper reviews the state of the art in spin-torque and spin Hall effect driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the potential for these oscillators in a wide range of applications, from microwave signal sources and detectors to neuromorphic computation elements, is discussed together with the specific electronic circuitry that has so far been designed to harness this potential.
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Submitted 10 December, 2015;
originally announced December 2015.
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Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers
Authors:
B. Gunnar Malm,
Mohammadreza Kolahdouz,
Fredrik Forsberg,
Frank Niklaus
Abstract:
The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K. This modeling approach can be used for different, graded and constant, SiGe profiles,. It is also capable of…
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The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K. This modeling approach can be used for different, graded and constant, SiGe profiles,. It is also capable of predicting the influence of background auto-do** on the TCR of the detectors
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Submitted 9 December, 2011;
originally announced December 2011.
