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Strong magneto-optical responses of an ensemble of defect-bound excitons in aged WS$_{2}$ and WSe$_{2}$ monolayers
Authors:
Frederico B. Sousa,
Alessandra Ames,
Mingzu Liu,
Pedro L. Gastelois,
Vinícius A. Oliveira,
Da Zhou,
Matheus J. S. Matos,
Helio Chacham,
Mauricio Terrones,
Marcio D. Teodoro,
Leandro M. Malard
Abstract:
Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is possible to break the energy degeneracy between their K and $-$K valleys. Thus, this analogous valley Zeeman effect opens the possibility of controlling and distinguishing the spin and valley of charge carriers in TMDs by t…
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Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is possible to break the energy degeneracy between their K and $-$K valleys. Thus, this analogous valley Zeeman effect opens the possibility of controlling and distinguishing the spin and valley of charge carriers in TMDs by their optical transition energies, making these materials promising for the next generation of spintronic and photonic devices. However, the free excitons of pristine TMD monolayer samples present a moderate valley Zeeman splitting, which is measured by their g-factor values that are approximately $-4$. Therefore, for application purposes it is mandatory alternative excitonic states with higher magnetic responses. Here we investigate the valley Zeeman effect in aged WS$_{2}$ and WSe$_{2}$ grown monolayers by magneto-photoluminescence measurements at cryogenic temperatures. These samples present a lower energy defect-bound exciton emission related to defects adsorbed during the aging process. While the free excitons of these samples exhibit g-factors between $-3$ and $-4$, their defect-bound excitons present giant effective g-factor values of $-(25.0 \pm 0.2)$ and $-(19.1 \pm 0.2)$ for WS$_{2}$ and WSe$_{2}$ aged monolayers, respectively. In addition, we observe a significant spin polarization of charge carriers in the defective mid gap states induced by the external magnetic fields. We explain this spin polarized population in terms of a spin-flip transition mechanism, which is also responsible for the magnetic dependent light emission of the defect-bound exciton states. Our work sheds light in the potential of aged TMDs as candidates for spintronic based devices.
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Submitted 5 April, 2024;
originally announced April 2024.
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Nano-optical investigation of grain boundaries, strain and edges in CVD grown MoS$_{2}$ monolayers
Authors:
Frederico B. Sousa,
Rafael Battistella Nadas,
Rafael Martins,
Ana P. M. Barboza,
Jaqueline S. Soares,
Bernardo R. A. Neves,
Ive Silvestre,
Ado Jorio,
Leandro M. Malard
Abstract:
The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a wide researched topic over the past decades. Optical characterization such as photoluminescence and Raman spectroscopies are important tools to probe their physical properties and the impact of defects. However, conventional optical techniques present a spatial resoluti…
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The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a wide researched topic over the past decades. Optical characterization such as photoluminescence and Raman spectroscopies are important tools to probe their physical properties and the impact of defects. However, conventional optical techniques present a spatial resolution limitation lying in a $μ$m-scale, which can be overcomed by the use of near-field optical measurements. Here, we use tip-enhanced photoluminescence and Raman spectroscopies to unveil nanoscale optical heterogeneities at grain boundaries, local strain fields and edges in grown MoS$_{2}$ monolayers. A noticeable enhancement of the exciton peak intensity corresponding to a trion emission quenching is observed at narrow regions down to 47 nm of width at grain boundaries related to do** effects. Besides, localized strain fields inside the sample lead to non-uniformities in the intensity and energy position of photoluminescence peaks. Finally, distinct samples present different nano-optical responses at their edges due to strain and passivation defects. The passivated defective edges show a photoluminescence intensity enhancement and energy blueshift as well as a frequency blueshift of the 2LA Raman mode. On the other hand, the strained edges display a photoluminescence energy redshift and frequency redshifts for E$_{2g}$ and 2LA Raman modes. Our work shows that different defect features can be only probed by using optical spectroscopies with a nanometric resolution, thus revealing hindered local impact of different nanoscale defects in two-dimensional materials.
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Submitted 22 January, 2024;
originally announced January 2024.
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Effects of Vanadium Do** on the Optical Response and Electronic Structure of WS$_{2}$ Monolayers
Authors:
Frederico B. Sousa,
Boyang Zheng,
Mingzu Liu,
Geovani C. Resende,
Da Zhou,
Marcos A. Pimenta,
Mauricio Terrones,
Vincent H. Crespi,
Leandro M. Malard
Abstract:
Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$ and WSe$_2$ monolayers, which exhibits a ferromagnetic ordering even above room temperature. However, a broadband characterization of their electronic band stru…
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Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$ and WSe$_2$ monolayers, which exhibits a ferromagnetic ordering even above room temperature. However, a broadband characterization of their electronic band structure and its dependence on vanadium concentration is still lacking. Therefore, here we perform power-dependent photoluminescence, resonant four-wave mixing, and differential reflectance spectroscopy to study the optical transitions close to the A exciton energy of vanadium-doped WS$_2$ monolayers with distinct concentrations. Instead of a single A exciton peak, vanadium-doped samples exhibit two photoluminescence peaks associated with transitions to occupied and unoccupied bands. Moreover, resonant Raman spectroscopy and resonant second-harmonic generation measurements revealed a blueshift in the B exciton but no energy change in the C exciton as vanadium is introduced in the monolayers. Density functional theory calculations showed that the band structure is sensitive to the Hubbard \(U\) correction for vanadium and several scenarios are proposed to explain the two photoluminescence peaks around the A exciton energy region. Our work provides the first broadband optical characterization of these two-dimensional dilute magnetic semiconductors, shedding light on the novel electronic features of WS$_{2}$ monolayers which are tunable by the vanadium concentration.
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Submitted 17 January, 2024;
originally announced January 2024.
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Amplification of interlayer exciton emission in twisted WSe$_2$/WSe$_2$/MoSe$_2$ heterotrilayers
Authors:
Chirag C. Palekar,
Paulo E. Faria Junior,
Barbara Rosa,
Frederico B. Sousa,
Leandro M. Malard,
Jaroslav Fabian,
Stephan Reitzenstein
Abstract:
Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of interlayer excitons. This limits the use of layered 2D materials as a versatile platform for develo** innovative optoelectronic and spintronic devices.…
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Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of interlayer excitons. This limits the use of layered 2D materials as a versatile platform for develo** innovative optoelectronic and spintronic devices. In this study, we report on the emission enhancement of interlayer excitons in multilayered-stacked monolayers through the fabrication of heterotrilayers consisting of WSe$_2$/WSe$_2$/MoSe$_2$ with differing twist angles. Our results show that an additional WSe$_2$ monolayer introduces new absorption pathways, leading to an improvement in the emission of interlayer excitons by more than an order of magnitude. The emission boost is affected by the twist angle, and we observe a tenfold increase in the heterotrilayer area when there is a 44$^\circ$ angle between the WSe$_2$ and MoSe$_2$ materials, as opposed to their heterobilayer counterparts. Furthermore, using density functional theory, we identify the emergence of new carrier transfer pathways in the three-layer sample which extends the current understanding of 2D semiconducting heterostructures. In addition, our research provides a viable way to significantly enhance the emission of interlayer excitons. The emission enhancement of interlayer excitons is significant not only for studying the fundamental properties of interlayer excitons, but also for enabling optoelectronic applications that utilize engineered 2D quantum materials with high luminescence yield.
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Submitted 4 November, 2023;
originally announced November 2023.
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Excitonic Resonances in Coherent Anti-Stokes Raman Scattering from Single Wall Carbon Nanotubes
Authors:
Georgy Gordeev,
Lucas Lafeta,
Benjamin Scott Flavel,
Ado Jorio,
Leandro M. Malard
Abstract:
In this work we investigate the role of exciton resonances in coherent anti-Stokes Raman scattering (er-CARS) in single walled carbon nanotubes (SWCNTs). We drive the nanotube system in simultaneous phonon and excitonic resonances, where we observe a superior enhancement by orders of magnitude exceeding non-resonant cases. We investigated the resonant effects in five $(n,m)$ chiralities and find t…
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In this work we investigate the role of exciton resonances in coherent anti-Stokes Raman scattering (er-CARS) in single walled carbon nanotubes (SWCNTs). We drive the nanotube system in simultaneous phonon and excitonic resonances, where we observe a superior enhancement by orders of magnitude exceeding non-resonant cases. We investigated the resonant effects in five $(n,m)$ chiralities and find that the er-CARS intensity varies drastically between different nanotube species. The experimental results are compared with a perturbation theory model. Finally, we show that such giant resonant non-linear signals enable rapid map** and local heating of individualized CNTs, suggesting easy tracking of CNTs for future nanotoxology studies and therapeutic application in biological tissues.
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Submitted 3 November, 2023; v1 submitted 6 May, 2023;
originally announced May 2023.
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Revealing Interfaces of Two-Dimensional Lateral Heterostructures by Second Harmonic Generation
Authors:
Frederico B. Sousa,
Lucas Lafeta,
Alisson R. Cadore,
Prasana K. Sahoo,
Leandro M. Malard
Abstract:
The interface between two different semiconductors is crucial in determining the electronic properties at the heterojunction, therefore novel techniques that can probe these regions are of particular interest. Recently it has been shown that heterojunctions of two-dimensional transition metal dichalcogenides have sharp and epitaxial interfaces that can be used to the next generation of flexible an…
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The interface between two different semiconductors is crucial in determining the electronic properties at the heterojunction, therefore novel techniques that can probe these regions are of particular interest. Recently it has been shown that heterojunctions of two-dimensional transition metal dichalcogenides have sharp and epitaxial interfaces that can be used to the next generation of flexible and on chip optoelectronic devices. Here, we show that second harmonic generation (SHG) can be used as an optical tool to reveal these atomically sharp interfaces in different lateral heterostructures. We observed an enhancement of the SH intensity at the heterojunctions, and showed that is due to a coherent superposition of the SH emission from each material. This constructive interference pattern reveals a phase difference arising from the distinct second-order susceptibilities of both materials at the interface. Our results demonstrate that SHG microscopy is a sensitive characterization technique to unveil nanometric features in layered materials and their heterostructures.
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Submitted 10 August, 2021;
originally announced August 2021.
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Multimodal microscopy for characterization of amyloid-${\unicode[Times]{x3B2}}$ plaques biomarkers in animal model of Alzheimer's disease
Authors:
Renan Cunha,
Lucas Lafeta,
Emerson A. Fonseca,
Alexandre Barbosa,
Marco A. Romano-Silva,
Rafael Vieira,
Ado Jorio,
Leandro M. Malard
Abstract:
Given the long subclinical stage of Alzheimer's disease (AD), the study of biomarkers is relevant both for early diagnosis and the fundamental understanding of the pathophysiology of AD. Biomarkers provided by amyloid-${\unicode[Times]{x3B2}}$ (A${\unicode[Times]{x3B2}}$) plaques have led to an increasing interest in characterizing this hallmark of AD due to its promising potential. In this work,…
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Given the long subclinical stage of Alzheimer's disease (AD), the study of biomarkers is relevant both for early diagnosis and the fundamental understanding of the pathophysiology of AD. Biomarkers provided by amyloid-${\unicode[Times]{x3B2}}$ (A${\unicode[Times]{x3B2}}$) plaques have led to an increasing interest in characterizing this hallmark of AD due to its promising potential. In this work, we characterize A${\unicode[Times]{x3B2}}$ plaques by label-free multimodal imaging: we combine two-photon excitation autofluorescence (TPEA), second harmonic generation (SHG), spontaneous Raman scattering (SpRS), coherent anti-Stokes Raman scattering (CARS), and stimulated Raman scattering (SRS) to describe and compare high-resolution images of A${\unicode[Times]{x3B2}}$ plaques in brain tissues of an AD mouse model. Comparing single-laser techniques images, we discuss the origin of the SHG, which can be used to locate the plaque core reliably. We study both the core and the halo with vibrational microscopy and compare SpRS and SRS microscopies for different frequencies. We also combine SpRS spectroscopy with SRS microscopy and present two core biomarkers unexplored with SRS microscopy: phenylalanine and amide B. We provide high-resolution SRS images with the spatial distribution of these biomarkers in the plaque and compared them with images of the amide I distribution. The obtained spatial correlation corroborates the feasibility of these biomarkers in the study of A${\unicode[Times]{x3B2}}$ plaques. Furthermore, since amide B enables rapid imaging, we discuss its potential as a novel fingerprint for diagnostic applications.
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Submitted 7 February, 2021;
originally announced February 2021.
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Second- and third-order optical susceptibilities in bidimensional semiconductors near excitons states
Authors:
Lucas Lafeta,
Aurea Corradi,
Tianyi Zhang,
Ethan Kahn,
Ismail Bilgin,
Bruno R. Carvalho,
Swastik Kar,
Mauricio Terrones,
Leandro M. Malard
Abstract:
Semiconducting Transition Metal Dichalcogenides (TMDs) have significant nonlinear optical effects. In this work we have used second-harmonic generation (SHG) and the four-wave mixing (FWM) spectroscopy in resonance with the excitons in MoS2, MoSe2, and WS2 monolayers to characterize the nonlinear optical properties of these materials. We show that trions and excitons are responsible for enhancing…
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Semiconducting Transition Metal Dichalcogenides (TMDs) have significant nonlinear optical effects. In this work we have used second-harmonic generation (SHG) and the four-wave mixing (FWM) spectroscopy in resonance with the excitons in MoS2, MoSe2, and WS2 monolayers to characterize the nonlinear optical properties of these materials. We show that trions and excitons are responsible for enhancing the nonlinear optical response, and determine the exciton and trion energies by comparing with the photoluminescence spectra. Moreover, we extract the second and third order optical sheet susceptibility near exciton energies and compare with values found in the literature. We also demonstrate the ability to generate different nonlinear effects in a wide spectral range in the visible region for monolayer MoS2, opening the possibility of using two-dimensional materials for nonlinear optoelectronic and photonic applications.
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Submitted 25 January, 2021;
originally announced January 2021.
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Gate-tunable non-volatile photomemory effect in MoS$_2$ transistors
Authors:
Andreij C. Gadelha,
Alisson R. Cadore,
Kenji Watanabe,
Takashi Tanigushi,
Ana M. de Paula,
Leandro M. Malard,
Rodrigo G. Lacerda,
Leonardo C. Campos
Abstract:
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodo** effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodo** promotes changes on…
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Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodo** effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodo** promotes changes on the conductance of MoS$_2$ leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of years. Furthermore, we show that the photodo** is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodo**, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS$_2$ phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures.
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Submitted 17 June, 2020;
originally announced June 2020.
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Local photodo** in monolayer MoS2
Authors:
Andreij C. Gadelha,
Alisson R. Cadore,
Lucas Lafeta,
Ana M. de Paula,
Leandro M. Malard,
Rodrigo G. Lacerda,
Leonardo C. Campos
Abstract:
Inducing electrostatic do** in 2D materials by laser exposure (photodo** effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodo** in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodo** modulates the photo…
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Inducing electrostatic do** in 2D materials by laser exposure (photodo** effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodo** in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodo** modulates the photocurrent generation in MoS2 transistors locally. We claim that the photodo** fills the electronic states in MoS2 conduction band, preventing the photon-absorption and the photocurrent generation by the MoS2 sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS2 on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodo** generation. Our work gives a step forward to the understanding of the photodo** effect in MoS2 transistors and the implementation of such an effect in integrated devices.
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Submitted 16 June, 2020;
originally announced June 2020.
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Nonlinear dark-field imaging of 1D defects in monolayer dichalcogenides
Authors:
Bruno R. Carvalho,
Yuanxi Wang,
Kazunori Fujisawa,
Tianyi Zhang,
Ethan Kahn,
Ismail Bilgin,
Pulickel M. Ajayan,
Ana M. de Paula,
Marcos A. Pimenta,
Swastik Kar,
Vincent H. Crespi,
Mauricio Terrones,
Leandro M. Malard
Abstract:
Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D de…
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Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D defects in 2D materials is lacking. Scanning transmission electron microscopy (STEM), Raman, photoluminescence and nonlinear optical spectroscopies, are all extremely valuable, but current implementations suffer from low throughput and a destructive nature (STEM) or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and non-destructively probe grain boundaries and edges in monolayer dichalcogenides (i.e. MoSe2, MoS2 and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Cerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defects metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress towards both applications and fundamental materials discoveries.
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Submitted 12 March, 2019;
originally announced March 2019.
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Anomalous Non-linear Optical Response Of Graphene Near Phonon Resonances
Authors:
Lucas Lafetá,
Alisson Cardore,
Thiago G. Mendes Sá,
Kenji Watanabe,
Takashi Taniguchi,
Leonardo C. Campos,
Ado Jorio,
Leandro M. Malard
Abstract:
In this work we probe the third-order non-linear optical property of graphene, hexagonal boron nitride and their heterostructure by the use of coherent anti-Stokes Raman Spectroscopy. When the energy difference of the two input fields match the phonon energy, the anti-Stokes emission intensity is enhanced in h-BN, as usually expected while for graphene a anomalous decrease is observed. This behavi…
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In this work we probe the third-order non-linear optical property of graphene, hexagonal boron nitride and their heterostructure by the use of coherent anti-Stokes Raman Spectroscopy. When the energy difference of the two input fields match the phonon energy, the anti-Stokes emission intensity is enhanced in h-BN, as usually expected while for graphene a anomalous decrease is observed. This behaviour can be understood in terms of q coupling between the electronic continuum and a discrete phonon state. We have also measured a graphene/h-BN heterostructure and demonstrate that the anomalous effect in graphene dominates the heterostructure optical response.
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Submitted 31 January, 2017;
originally announced January 2017.
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Observation of Intense Second Harmonic Generation from MoS$_{2}$ Atomic Crystals
Authors:
Leandro M. Malard,
Thonimar V. Alencar,
Ana Paula M. Barboza,
Kin Fai Mak,
Ana M. de Paula
Abstract:
Since de discovery of graphene, the family of 2-dimensional materials has attracted much recent attention. In this work, the nonlinear optical properties of few-layer MoS2 two-dimensional crystals are studied using femtosecond laser pulses. We observed highly efficient second harmonic generation from the odd-layer crystals, which shows a polarization intensity dependence that directly reveals the…
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Since de discovery of graphene, the family of 2-dimensional materials has attracted much recent attention. In this work, the nonlinear optical properties of few-layer MoS2 two-dimensional crystals are studied using femtosecond laser pulses. We observed highly efficient second harmonic generation from the odd-layer crystals, which shows a polarization intensity dependence that directly reveals the underlying symmetry and orientation of the crystal. Additionally, the measured second-order susceptibility spectra provide information about the electronic structure of the material. Our results open up new opportunities for studying the non-linear optical properties in these novel 2D crystals.
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Submitted 15 April, 2013;
originally announced April 2013.
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Observation of out-of-plane vibrations in few-layer graphene
Authors:
Chun Hung Lui,
Leandro M. Malard,
SukHyun Kim,
Gabriel Lantz,
François E. Laverge,
Riichiro Saito,
Tony F. Heinz
Abstract:
We report the observation of layer breathing mode (LBM) vibrations in few-layer graphene (FLG) samples of thickness from 2 to 6 layers, exhibiting both Bernal (AB) and rhombohedral (ABC) stacking order. The LBM vibrations are identified using a Raman combination band lying around 1720 cm-1. From double resonance theory, we identify the feature as the LOZO' combination mode of the out-of-plane LBM…
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We report the observation of layer breathing mode (LBM) vibrations in few-layer graphene (FLG) samples of thickness from 2 to 6 layers, exhibiting both Bernal (AB) and rhombohedral (ABC) stacking order. The LBM vibrations are identified using a Raman combination band lying around 1720 cm-1. From double resonance theory, we identify the feature as the LOZO' combination mode of the out-of-plane LBM (ZO') and the in-plane longitudinal optical mode (LO). The LOZO' Raman band is found to exhibit multiple peaks, with a unique line shape for each layer thickness and stacking order. These complex line shapes of the LOZO'-mode arise both from the material-dependent selection of different phonons in the double-resonance Raman process and from the detailed structure of the different branches of LBM in FLG.
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Submitted 7 April, 2012;
originally announced April 2012.
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Characterizing top gated bilayer graphene interaction with its environment by Raman spectroscopy
Authors:
D. L. Mafra,
P. Gava,
L. M. Malard,
R. S. Borges,
G. G. Silva,
J. A. Leon,
F. Plentz,
F. Mauri,
M. A. Pimenta
Abstract:
In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is explained in terms of mixing of the Raman (Eg) and infrared (Eu) phonon modes, due to different do** in the two layers. We theoretically analyze our data in…
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In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is explained in terms of mixing of the Raman (Eg) and infrared (Eu) phonon modes, due to different do** in the two layers. We theoretically analyze our data in terms of the bilayer graphene phonon self-energy which includes non-homogeneous charge carrier do** between the graphene layers. We show that the comparison between the experiment and theoretical model not only gives information about the total charge concentration in the bilayer graphene device, but also allows to separately quantify the amount of unintentional charge coming from the top and the bottom of the system, and therefore to characterize the interaction of bilayer graphene with its surrounding environment.
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Submitted 19 April, 2011;
originally announced April 2011.
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Observation of Intra- and Inter-band Transitions in the Optical Response of Graphene
Authors:
Leandro M. Malard,
Kin Fai Mak,
A. H. Castro Neto,
N. M. R. Peres,
Tony F. Heinz
Abstract:
The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with increasing pump fluence. The response arises from a combination of bleaching of the inter-band trans…
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The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with increasing pump fluence. The response arises from a combination of bleaching of the inter-band transitions by Pauli blocking and induced absorption from the intra-band transitions of the carriers. The latter dominates at low electronic temperature, but, despite an increase in Drude scattering rate, is overwhelmed by the former at high electronic temperature. The time-evolution of the optical conductivity in all regimes can described in terms of a time-varying electronic temperature.
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Submitted 15 April, 2011;
originally announced April 2011.
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Observation of the Kohn anomaly near the K point of bilayer graphene
Authors:
D. L. Mafra,
L. M. Malard,
S. K. Doorn,
H. Htoon,
J. Nilsson,
A. H. Castro Neto,
M. A. Pimenta
Abstract:
The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the R…
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The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the Raman features. A softening of the phonon branches was observed near the K point, and results evidence the Kohn anomaly and the importance of considering electron-phonon and electron-electron interactions to correctly describe the phonon dispersion in graphene systems.
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Submitted 19 July, 2009;
originally announced July 2009.
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Group theory analysis of electrons and phonons in N-layer graphene systems
Authors:
L. M. Malard,
D. L. Mafra,
M. H. D. Guimarães,
M. S. C. Mazzoni,
A. Jorio
Abstract:
In this work we study the symmetry properties of electrons and phonons in graphene systems as function of the number of layers. We derive the selection rules for the electron-radiation and for the electron-phonon interactions at all points in the Brillouin zone. By considering these selection rules, we address the double resonance Raman scattering process. The monolayer and bilayer graphene in t…
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In this work we study the symmetry properties of electrons and phonons in graphene systems as function of the number of layers. We derive the selection rules for the electron-radiation and for the electron-phonon interactions at all points in the Brillouin zone. By considering these selection rules, we address the double resonance Raman scattering process. The monolayer and bilayer graphene in the presence of an applied electric field are also discussed.
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Submitted 6 December, 2008;
originally announced December 2008.
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Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
Authors:
L. M. Malard,
D. C. Elias,
E. S. Alves,
M. A. Pimenta
Abstract:
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry…
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A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
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Submitted 18 August, 2008;
originally announced August 2008.
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Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
Authors:
L. M. Malard,
J. Nilsson,
D. C. Elias,
J. C. Brant,
F. Plentz,
E. S. Alves,
A. H. Castro Neto,
M. A. Pimenta
Abstract:
The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of ele…
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The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.
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Submitted 9 August, 2007;
originally announced August 2007.
