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High throughput investigation of an emergent and naturally abundant 2D material: Clinochlore
Authors:
Raphaela de Oliveira,
Luis A. G. Guallichico,
Eduardo Policarpo,
Alisson R. Cadore,
Raul O. Freitas,
Francisco M. C. da Silva,
Verônica de C. Teixeira,
Roberto M. Paniago,
Helio Chacham,
Matheus J. S. Matos,
Angelo Malachias,
Klaus Krambrock,
Ingrid D. Barcelos
Abstract:
Phyllosilicate minerals, which form a class of naturally occurring layered materials (LMs), have been recently considered as a low-cost source of two-dimensional (2D) materials. Clinochlore [Mg5Al(AlSi3)O10(OH)8] is one of the most abundant phyllosilicate minerals in nature, exhibiting the capability to be mechanically exfoliated down to a few layers. An important characteristic clinochlore is the…
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Phyllosilicate minerals, which form a class of naturally occurring layered materials (LMs), have been recently considered as a low-cost source of two-dimensional (2D) materials. Clinochlore [Mg5Al(AlSi3)O10(OH)8] is one of the most abundant phyllosilicate minerals in nature, exhibiting the capability to be mechanically exfoliated down to a few layers. An important characteristic clinochlore is the natural occurrence of defects and impurities which can strongly affect their optoelectronic properties, possibly in technologically interesting ways. In the present work, we carry out a thorough investigation of the clinochlore structure on both bulk and 2D exfoliated forms, discussing its optical features and the influence of the insertion of impurities on its macroscopic properties. Several experimental techniques are employed, followed by theoretical first-principles calculations considering several types of naturally-ocurring transition metal impurities in the mineral lattice and their effect on electronic and optical properties. We demonstrate the existence of requirements concerning surface quality and insulating properties of clinochlore that are mandatory for its suitable application in nanoelectronic devices. The results presented in this work provide important informations for clinochlore potential applications and establish a basis for further works that intend to optimize its properties to relevant 2D technological applications through defect engineering.
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Submitted 20 June, 2022;
originally announced June 2022.
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Exploring the structural and optoelectronic properties of natural insulating phlogopite in van der Waals heterostructures
Authors:
Alisson R. Cadore,
Raphaela de Oliveira,
Raphael L. M. Lobato,
Verônica de C. Teixeira,
Danilo A. Nagaoka,
Vinicius T. Alvarenga,
Jenaina Ribeiro-Soares,
Kenji Watanabe,
Takashi Taniguchi,
Roberto M. Paniago,
Angelo Malachias,
Klaus Krambrock,
Ingrid D. Barcelos,
Christiano J. S. de Matos
Abstract:
Naturally occurring van der Waals crystals have brought unprecedented interest to nanomaterial researchers in recent years. So far, more than 1800 layered materials (LMs) have been identified but only a few insulating and naturally occurring LMs were deeply investigated. Phyllosilicate minerals, which are a class of natural and abundant LMs, have been recently considered as a low-cost source of in…
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Naturally occurring van der Waals crystals have brought unprecedented interest to nanomaterial researchers in recent years. So far, more than 1800 layered materials (LMs) have been identified but only a few insulating and naturally occurring LMs were deeply investigated. Phyllosilicate minerals, which are a class of natural and abundant LMs, have been recently considered as a low-cost source of insulating nanomaterials. Within this family an almost barely explored material emerges: phlogopite [KMg3(AlSi3)O10(OH)2]. Here we carry out a high throughput characterization of this LM by employing several experimental techniques, corroborating the major findings with first-principles calculations. We show that monolayers (1L) and few-layers of this material are air and temperature stable, as well as easily obtained by the standard mechanical exfoliation technique, have an atomically flat surface, and lower bandgap than its bulk counterpart, an unusual trend in LMs. We also systematically study the basic properties of ultrathin phlogopite and demonstrate that natural phlogopite presents iron impurities in its crystal lattice, which decreases its bandgap from about 7 eV to 3.6 eV. Finally, we combine phlogopite crystals with 1L-WS2 in ultrathin van der Waals heterostructures and present a photoluminescence study, revealing a significant enhancement on the 1L-WS2 optical quality (i.e., higher recombination efficiency through neutral excitons) similarly to that obtained on 1L-WS2/hBN heterostructures. Our proof-of-concept study shows that phlogopite should be regarded as a good and promising candidate for LM-based applications as a low-cost layered nanomaterial.
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Submitted 6 May, 2022;
originally announced May 2022.
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Probing the Electronic Properties of Monolayer MoS$_2$ via Interaction with Molecular Hydrogen
Authors:
Natália P. Rezende,
Alisson R. Cadore,
Andreij C. Gadelha,
Cíntia L. Pereira,
Vinicius Ornelas,
Kenji Watanabe,
Takashi Taniguchi,
André S. Ferlauto,
Ângelo Malachias,
Leonardo C. Campos,
Rodrigo G. Lacerda
Abstract:
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response to H$_2$ that covers a broad range of concentration (0.1 - 90%) at a relatively low operating temperature range (300-473 K). Most important, H$_2$ sensors base…
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This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response to H$_2$ that covers a broad range of concentration (0.1 - 90%) at a relatively low operating temperature range (300-473 K). Most important, H$_2$ sensors based on MoS$_2$ FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS$_2$ monotonically increases as a function of the H$_2$ concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H$_2$ adsorption driven by interaction with sulfur vacancies in the MoS$_2$ surface (VS). This description is in agreement with related density functional theory studies about H$_2$ adsorption on MoS$_2$. Finally, measurements on partially defect-passivated MoS$_2$ FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H$_2$ interaction with the MoS$_2$. These findings provide insights for futures applications in catalytic process between monolayer MoS$_2$ and H$_2$ and also introduce MoS$_2$ FETs as promising H$_2$ sensors.
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Submitted 4 March, 2020;
originally announced March 2020.
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Observation of plasmon-phonon coupling in natural 2D graphene-talc heterostructures
Authors:
Ingrid D. Barcelos,
Alisson R. Cadore,
Ananias B. Alencar,
Francisco C. B. Maia,
Edrian Mania,
Rafael F. Oliveira,
Carlos C. B. Buffon,
Ângelo Malachias,
Raul O. Freitas,
Roberto L. Moreira,
Hélio Chacham
Abstract:
Two-dimensional (2D) materials occupy noteworthy place in nanophotonics providing for subwavelength light confinement and optical phenomena dissimilar to those of their bulk counterparts. In the mid-infrared, graphene-based heterostructures and van der Waals crystals of hexagonal boron nitride (hBN) overwhelmingly concentrate the attention by exhibiting real-space nano-optics from plasmons, phonon…
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Two-dimensional (2D) materials occupy noteworthy place in nanophotonics providing for subwavelength light confinement and optical phenomena dissimilar to those of their bulk counterparts. In the mid-infrared, graphene-based heterostructures and van der Waals crystals of hexagonal boron nitride (hBN) overwhelmingly concentrate the attention by exhibiting real-space nano-optics from plasmons, phonon-polaritons and hybrid plasmon phonon-polaritons quasiparticles. Here we present the mid-infrared nanophotonics of talc, a natural atomically flat layered material, and graphene-talc (G-talc) heterostructures using broadband synchrotron infrared nano-spectroscopy. We achieve wavelength tuning of the talc resonances, assigned to in- and out-of-plane vibrations by changing the thickness of the crystals, which serves as its infrared fingerprints. Moreover, we encounter coupling of the graphene plasmons polaritons with surface optical phonons of talc. As in the case of the G-hBN heterostructures, this coupling configures hybrid surface plasmon phonon-polariton modes causing 30 % increase in intensity for the out-of-plane mode, blue-shift for the in-plane mode and we have succeeded in altering the amplitude of such hybridization by varying the gate voltage. Therefore, our results promote talc and G-talc heterostructures as appealing materials for nanophotonics, like hBN and G-hBN, with potential applications for controllably manipulating infrared electromagnetic radiation at the subdiffraction scale.
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Submitted 15 April, 2018;
originally announced April 2018.
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Study of Growth Properties of InAs Islands on Nucleation Sites Defined by Focused Ion Beam
Authors:
R-Ribeiro Andrade,
D. R. Miquita,
T. L. Vasconcelos,
R. Kawabata,
A. Malachias,
M. P. Pire,
P. L. Souza,
W. N. Rodrigues
Abstract:
This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001) surfaces, acting as preferential nucleation sites for InAs islands grown by Metal-Organic Vapor Phase Epitaxy. Ion doses ranging from $10^{15}$ to $10^{16}$…
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This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001) surfaces, acting as preferential nucleation sites for InAs islands grown by Metal-Organic Vapor Phase Epitaxy. Ion doses ranging from $10^{15}$ to $10^{16}$ $Ga^{+}$/$cm^{2}$ were used and islands were grown for two sub-monolayer coverages. We observe the formation of clusters in the inner surfaces of the FIB produced cavities and show that for low doses templates the nanostructures are mainly coherent while templates created with large ion doses lead to the growth of incoherent islands with larger island density. The modified island growth is described by a simple model based on the surface potential and the net adatom flow to the cavities. We observe that obtained morphologies result from a competition between coarsening and coalescence mechanisms.
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Submitted 15 March, 2016;
originally announced March 2016.
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Structural analysis of polycrystalline graphene systems by Raman spectroscopy
Authors:
J. Ribeiro-Soares,
M. E. Oliveros,
C. Garin,
M. V. David,
L. G. P. Martins,
C. A. Almeida,
E. H. Martins-Ferreira,
K. Takai,
T. Enoki,
R. Magalhães-Paniago,
A. Malachias,
A. Jorio,
B. S. Archanjo,
C. A. Achete,
L. G. Cançado
Abstract:
A theoretical model supported by experimental results explains the dependence of the Raman scattering signal on the evolution of structural parameters along the amorphization trajectory of polycrystalline graphene systems. Four parameters rule the scattering efficiencies, two structural and two related to the scattering dynamics. With the crystallite sizes previously defined from X-ray diffraction…
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A theoretical model supported by experimental results explains the dependence of the Raman scattering signal on the evolution of structural parameters along the amorphization trajectory of polycrystalline graphene systems. Four parameters rule the scattering efficiencies, two structural and two related to the scattering dynamics. With the crystallite sizes previously defined from X-ray diffraction and microscopy experiments, the three other parameters (the average grain boundaries width, the phonon coherence length, and the electron coherence length) are extracted from the Raman data with the geometrical model proposed here. The broadly used intensity ratio between the C-C stretching (G band) and the defect-induced (D band) modes can be used to measure crystallite sizes only for samples with sizes larger than the phonon coherence length, which is found equal to 32 nm. The Raman linewidth of the G band is ideal to characterize the crystallite sizes below the phonon coherence length, down to the average grain boundaries width, which is found to be 2.8 nm. "Ready-to-use" equations to determine the crystallite dimensions based on Raman spectroscopy data are given.
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Submitted 20 November, 2015;
originally announced November 2015.
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Experimental realization of coexisting states of rolled-up and wrinkled nanomembranes by strain and etching control
Authors:
Peter Cendula,
Angelo Malachias,
Christoph Deneke,
Suwit Kiravittaya,
Oliver G. Schmidt
Abstract:
Self-positioned nanomembranes such as rolled-up tubes and wrinkled thin films have been potential systems for a variety of applications and basic studies on elastic properties of nanometer-thick systems. Although there is a clear driving force towards elastic energy 1
minimization in each system, the exploration of intermediate states where specific characteristics could be chosen by a slight modi…
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Self-positioned nanomembranes such as rolled-up tubes and wrinkled thin films have been potential systems for a variety of applications and basic studies on elastic properties of nanometer-thick systems. Although there is a clear driving force towards elastic energy 1
minimization in each system, the exploration of intermediate states where specific characteristics could be chosen by a slight modification of a processing parameter had not been experimentally realized. In this work, arrays of freestanding III-V nanomembranes (NM) supported on one edge and presenting a coexistence of these two main behaviors were obtained by design of strain conditions in the NMs and controlled selective etching of patterned substrates. As the etching process continues a mixture of wrinkled and rolled-up states is achieved. For very long etching times an onset of plastic cracks was observed in the points with localized stress. The well- defined morphological periodicity of the relaxed NMs was compared with finite element simulations of their elastic relaxation. The evolution of strain in the NMs with etching time was directly evaluated by X-ray diffraction, providing a comprehensive scenario of transitions among competing and coexisting strain states.
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Submitted 22 July, 2014;
originally announced July 2014.
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Observation of strain-free rolled-up CVD graphene single layers: towards unstrained heterostructures
Authors:
Ingrid D. Barcelos,
Luciano G. Moura,
Rodrigo G. Lacerda,
Angelo Malachias
Abstract:
Single layer graphene foils produced by Chemical Vapor Deposition (CVD) are rolled with self-positioned layers of InGaAs/Cr forming compact multi-turn tubular structures that consist on successive graphene/metal/semiconductor heterojunctions on a radial superlattice. Using elasticity theory and Raman spectroscopy we show that it is possible to produce homogeneously curved graphene with curvature r…
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Single layer graphene foils produced by Chemical Vapor Deposition (CVD) are rolled with self-positioned layers of InGaAs/Cr forming compact multi-turn tubular structures that consist on successive graphene/metal/semiconductor heterojunctions on a radial superlattice. Using elasticity theory and Raman spectroscopy we show that it is possible to produce homogeneously curved graphene with curvature radius on the 600nm-1200nm range. Additionally, the study of tubular structures also allows the extraction of values for the elastic constants of graphene that are in excellent agreement with elastic constants found in the literature. However, our process has the advantage of leading to a well-defined and nonlocal curvature. Since our curvature radius lie in a range between the large radius studied using mechanical bending and the reduced radius induced by Atomic Force Microscopy experiments we can figure out whether bending effects can be a majoritary driving force for modifications in graphene electronic status. From the results described in this work one can assume that curvature effects solely do not modify the Raman signature of graphene and that strain phenomena observed previously can be ascribed to stretching due to the formation of local atomic bonds. This implies that the interactions of graphene with additional materials on heterostructures must be investigated in detail prior to the development of applications and devices.
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Submitted 8 May, 2014;
originally announced May 2014.
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Structural and magnetic properties of an InGaAs/Fe$_3$Si superlattice in cylindrical geometry
Authors:
Ch. Deneke,
J. Schumann,
R. Engelhard,
J. Thomas,
C. Müller,
M. S. Khatri,
A. Malachias,
M. Weisser,
T. H. Metzger,
O. G. Schmidt
Abstract:
The structure and the magnetic properties of an InGaAs/Fe3Si superlattice in a cylindrical geometry are investigated by electron microscopy techniques, x-ray diffraction and magnetometry. To form a radial superlattice, a pseudomorphic InGaAs/Fe3As bilayer has been released from its substrate self-forming into a rolled-up microtube. Oxide-free interfaces as well as areas of crystalline bonding ar…
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The structure and the magnetic properties of an InGaAs/Fe3Si superlattice in a cylindrical geometry are investigated by electron microscopy techniques, x-ray diffraction and magnetometry. To form a radial superlattice, a pseudomorphic InGaAs/Fe3As bilayer has been released from its substrate self-forming into a rolled-up microtube. Oxide-free interfaces as well as areas of crystalline bonding are observed and an overall lattice mismatch between succeeding layers is determined. The cylindrical symmetry of the final radial superlattice shows a significant effect on the magnetization behavior of the rolled-up layers.
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Submitted 10 February, 2009; v1 submitted 5 October, 2008;
originally announced October 2008.
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Direct strain and elastic energy evaluation in rolled-up semiconductor tubes by x-ray micro-diffraction
Authors:
A. Malachias,
Ch. Deneke,
B. Krause,
C. Mocuta,
S. Kiravittaya,
T. H. Metzger,
O. G. Schmidt
Abstract:
We depict the use of x-ray diffraction as a tool to directly probe the strain status in rolled-up semiconductor tubes. By employing continuum elasticity theory and a simple model we are able to simulate quantitatively the strain relaxation in perfect crystalline III-V semiconductor bi- and multilayers as well as in rolled-up layers with dislocations. The reduction in the local elastic energy is…
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We depict the use of x-ray diffraction as a tool to directly probe the strain status in rolled-up semiconductor tubes. By employing continuum elasticity theory and a simple model we are able to simulate quantitatively the strain relaxation in perfect crystalline III-V semiconductor bi- and multilayers as well as in rolled-up layers with dislocations. The reduction in the local elastic energy is evaluated for each case. Limitations of the technique and theoretical model are discussed in detail.
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Submitted 7 September, 2008;
originally announced September 2008.
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Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires
Authors:
J. C. Gonz'alez,
A. Malachias,
J. C. de Sousa,
R-Ribeiro Andrade,
M. V. B. Moreira,
A. G. de Oliveira
Abstract:
We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of In$_{0.86}$Ga$_{0.14}$As. Unlike typical vapor-liquid-solid g…
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We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of In$_{0.86}$Ga$_{0.14}$As. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.
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Submitted 13 May, 2008; v1 submitted 13 March, 2008;
originally announced March 2008.
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Strain selectivity of SiGe wet chemical etchants
Authors:
M. Stoffel,
A. Malachias,
T. Merdzhanova,
F. Cavallo,
G. Isella,
D. Chrastina,
H. von Kaenel,
A. Rastelli,
O. G. Schmidt
Abstract:
We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants…
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We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants are isotropic with no preferential etching of particular facets.
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Submitted 28 January, 2008;
originally announced January 2008.
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Magnetic structure and critical behavior of GdRhIn$_{5}$: resonant x-ray diffraction and renormalization group analysis
Authors:
E. Granado,
B. Uchoa,
A. Malachias,
R. Lora-Serrano,
P. G. Pagliuso,
H. Westfahl Jr
Abstract:
The magnetic structure and fluctuations of tetragonal GdRhIn5 were studied by resonant x-ray diffraction at the Gd LII and LIII edges, followed by a renormalization group analysis for this and other related Gd-based compounds, namely Gd2IrIn8 and GdIn3. These compounds are spin-only analogs of the isostructural Ce-based heavy-fermion superconductors. The ground state of GdRhIn5 shows a commensur…
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The magnetic structure and fluctuations of tetragonal GdRhIn5 were studied by resonant x-ray diffraction at the Gd LII and LIII edges, followed by a renormalization group analysis for this and other related Gd-based compounds, namely Gd2IrIn8 and GdIn3. These compounds are spin-only analogs of the isostructural Ce-based heavy-fermion superconductors. The ground state of GdRhIn5 shows a commensurate antiferromagnetic spin structure with propagation vector tau = (0,1/2, 1/2), corresponding to a parallel spin alignment along the a-direction and antiparallel alignment along b and c. A comparison between this magnetic structure and those of other members of the Rm(Co,Rh,Ir)n In3m+2n family (R =rare earth, n = 0, 1; m = 1, 2) indicates that, in general, tau is determined by a competition between first-(J1) and second-neighbor(J2) antiferromagnetic (AFM) interactions. While a large J1 /J2 ratio favors an antiparallel alignment along the three directions (the so-called G-AFM structure), a smaller ratio favors the magnetic structure of GdRhIn5 (C-AFM). In particular, it is inferred that the heavy-fermion superconductor CeRhIn5 is in a frontier between these two ground states, which may explain its non-collinear spiral magnetic structure. The critical behavior of GdRhIn5 close to the paramagnetic transition at TN = 39 K was also studied in detail. A typical second-order transition with the ordered magnetization critical parameter beta = 0.35 was experimentally found, and theoretically investigated by means of a renormalization group analysis.
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Submitted 5 July, 2006;
originally announced July 2006.
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Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering
Authors:
A. Malachias,
T. U. Schulli,
G. Medeiros-Ribeiro,
M. Stoffel,
O. G. Schmidt,
T. H. Metzger,
R. Magalhaes-Paniago
Abstract:
X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limite…
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X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limited region of the islands where the stoichiometry is close to Si0.5Ge0.5.
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Submitted 25 November, 2004;
originally announced November 2004.
