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Antiferromagnetic nanoscale bit arrays of magnetoelectric Cr$_2$O$_3$ thin films
Authors:
Peter Rickhaus,
Oleksandr V. Pylypovskyi,
Gediminas Seniutinas,
Vicent Borras,
Paul Lehmann,
Kai Wagner,
Liza Žaper,
Paulina J. Prusik,
Pavlo Makushko,
Igor Veremchuk,
Tobias Kosub,
René Hübner,
Denis D. Sheka,
Patrick Maletinsky,
Denys Makarov
Abstract:
Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100-nm-thick magnetoelectric Cr$_2$O$_3$ films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the…
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Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100-nm-thick magnetoelectric Cr$_2$O$_3$ films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the domain structure evolves from a multidomain state for larger bits to a single domain state for the smallest bits. Based on spin-lattice simulations, we show that the physics of the domain pattern formation in granular AFM bits is primarily determined by the energy dissipation upon cooling, which results in motion and expelling of AFM domain walls of the bit. Our results provide a way towards the fabrication of single domain AFM-bit-patterned memory devices and the exploration of the interplay between AFM nanostructures and their geometric shape.
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Submitted 27 June, 2024;
originally announced June 2024.
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Spin-orbit interaction driven terahertz nonlinear dynamics in transition metals
Authors:
Ruslan Salikhov,
Markus Lysne,
Philipp Werner,
Igor Ilyakov,
Michael Schüler,
Thales V. A. G. de Oliveira,
Alexey Ponomaryov,
Atiqa Arshad,
Gulloo Lal Prajapati,
Jan-Christoph Deinert,
Pavlo Makushko,
Denys Makarov,
Thomas Cowan,
Jürgen Fassbender,
Jürgen Lindner,
Aleksandra Lindner,
Carmine Ortix,
Sergey Kovalev
Abstract:
The interplay of electric charge, spin, and orbital polarizations, coherently driven by picosecond long oscillations of light fields in spin-orbit coupled systems, is the foundation of emerging terahertz spintronics and orbitronics. The essential rules for how terahertz light interacts with these systems in a nonlinear way are still not understood. In this work, we demonstrate a universally applic…
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The interplay of electric charge, spin, and orbital polarizations, coherently driven by picosecond long oscillations of light fields in spin-orbit coupled systems, is the foundation of emerging terahertz spintronics and orbitronics. The essential rules for how terahertz light interacts with these systems in a nonlinear way are still not understood. In this work, we demonstrate a universally applicable electronic nonlinearity originating from spin-orbit interactions in conducting materials, wherein the interplay of light-induced spin and orbital textures manifests. We utilized terahertz harmonic generation spectroscopy to investigate the nonlinear dynamics over picosecond timescales in various transition metal films. We found that the terahertz harmonic generation efficiency scales with the spin Hall conductivity in the studied films, while the phase takes two possible values (shifted by π), depending on the d-shell filling. These findings elucidate the fundamental mechanisms governing non-equilibrium spin and orbital polarization dynamics at terahertz frequencies, which is relevant for potential applications of terahertz spin- and orbital-based devices.
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Submitted 22 November, 2023;
originally announced November 2023.
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Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films
Authors:
Pavlo Makushko,
Sergey Kovalev,
Yevhen Zabila,
Igor Ilyakov,
Alexey Ponomaryov,
Atiqa Arshad,
Gulloo Lal Prajapati,
Thales V. A. G. de Oliveira,
Jan-Christoph Deinert,
Paul Chekhonin,
Igor Veremchuk,
Tobias Kosub,
Yurii Skourski,
Fabian Ganss,
Denys Makarov,
Carmine Ortix
Abstract:
The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling and occurs in non-centrosymmetric crystals with large Berry curvature -- an emergent magnetic field encoding the geometric properties of electronic wavefunctions.…
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The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling and occurs in non-centrosymmetric crystals with large Berry curvature -- an emergent magnetic field encoding the geometric properties of electronic wavefunctions. The design of (opto)electronic devices based on the NLHE is however hindered by the fact that this nonlinear effect typically appears at low temperatures and in complex compounds characterized by Dirac or Weyl electrons. Here, we show a strong room temperature NLHE in the centrosymmetric elemental material bismuth synthesized in the form of technologically relevant polycrystalline thin films. The ($1\,1\,1$) surface electrons of this material are equipped with a Berry curvature triple that activates side jumps and skew scatterings generating nonlinear transverse currents. We also report a boost of the zero field nonlinear transverse voltage in arc-shaped bismuth stripes due to an extrinsic geometric classical counterpart of the NLHE. This electrical frequency doubling in curved geometries is then extended to optical second harmonic generation in the terahertz (THz) spectral range. The strong nonlinear electrodynamical responses of the surface states are further demonstrated by a concomitant highly efficient THz third harmonic generation which we achieve in a broad range of frequencies in Bi and Bi-based heterostructures. Combined with the possibility of growth on CMOS-compatible and mechanically flexible substrates, these results highlight the potential of Bi thin films for THz (opto)electronic applications.
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Submitted 23 October, 2023;
originally announced October 2023.
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Surface-symmetry-driven Dzyaloshinskii--Moriya interaction and canted ferrimagnetism in collinear magnetoelectric antiferromagnet Cr$_2$O$_3$
Authors:
Oleksandr V. Pylypovskyi,
Sophie F. Weber,
Pavlo Makushko,
Igor Veremchuk,
Nicola A. Spaldin,
Denys Makarov
Abstract:
Antiferromagnets are normally thought of as materials with compensated magnetic sublattices. This adds to their technological advantages but complicates readout of the antiferromagnetic state. We demonstrate theoretically the existence of a Dzyaloshinskii-Moriya interaction (DMI) which is determined by the magnetic symmetry classes of Cr$_2$O$_3$ surfaces with an in-plane magnetic easy axis. The D…
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Antiferromagnets are normally thought of as materials with compensated magnetic sublattices. This adds to their technological advantages but complicates readout of the antiferromagnetic state. We demonstrate theoretically the existence of a Dzyaloshinskii-Moriya interaction (DMI) which is determined by the magnetic symmetry classes of Cr$_2$O$_3$ surfaces with an in-plane magnetic easy axis. The DMI explains a previously predicted out-of-plane magnetization at the nominally compensated surfaces of chromia, leading to a surface-localized canted ferrimagnetism. This is in agreement with magnetotransport measurements and with density functional theory predictions which further allow us to quantify the strength of DMI. The temperature dependence of the transversal resistance for these planes shows distinct behavior in comparison with that of the Cr$_2$O$_3$ $c$ plane, which we attribute to the influence of DMI. Our work provides a framework to analyze surface-driven phenomena in antiferromagnets, and motivates the use of nominally compensated chromia surfaces for antiferomagnetic spintronics and magnonics.
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Submitted 20 October, 2023;
originally announced October 2023.
