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Exact continuum theory of anti-Klein tunneling in bilayer graphene
Authors:
P. A. Maksym,
H. Aoki
Abstract:
Exact conditions for anti-Klein transmission zeros are found analytically with a 4-component continuum approach which includes trigonal war**. Anti-Klein tunneling occurs at oblique incidence on steps and barriers with soft and hard walls as well as in the known case of normal incidence on a hard step. The necessary energy and angle of incidence depend on the crystallographic orientation of the…
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Exact conditions for anti-Klein transmission zeros are found analytically with a 4-component continuum approach which includes trigonal war**. Anti-Klein tunneling occurs at oblique incidence on steps and barriers with soft and hard walls as well as in the known case of normal incidence on a hard step. The necessary energy and angle of incidence depend on the crystallographic orientation of the step or barrier. At normal incidence on an armchair step in unbiased bilayer graphene, anti-Klein tunneling occurs because both the continuum and the tight binding Hamiltonians are invariant under layer and site interchange. At oblique incidence, anti-Klein tunneling is valley-dependent even in the absence of trigonal war**. An experimental arrangement that functions both as a detector of anti-Klein tunneling and a valley polarizer is suggested. There are cases where anti-Klein tunneling occurs in the 4-component theory but not in the 2-component approximation.
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Submitted 16 June, 2023;
originally announced June 2023.
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Complete Spin and Valley Polarization by Total External Reflection from Potential Barriers in Bilayer Graphene and Monolayer Transition Metal Dichalcogenides
Authors:
P. A. Maksym,
H. Aoki
Abstract:
It is shown that potential barriers in bilayer graphene (BLG) and monolayer transition metal dichalcogenides (TMDs) can split a valley unpolarized incident current into reflected and transmitted currents with opposite valley polarization. Valley asymmetric transmission inevitably occurs because of the low symmetry of the total Hamiltonian and when total external reflection occurs the transmission…
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It is shown that potential barriers in bilayer graphene (BLG) and monolayer transition metal dichalcogenides (TMDs) can split a valley unpolarized incident current into reflected and transmitted currents with opposite valley polarization. Valley asymmetric transmission inevitably occurs because of the low symmetry of the total Hamiltonian and when total external reflection occurs the transmission is 100% valley polarized in BLG and 100% spin and valley polarized in TMDs, except for exponentially small corrections. By adjusting the potential, 100% polarization can be obtained regardless of the crystallographic orientation of the barrier. A valley polarizer can be realized by arranging for a collimated beam of carriers to be incident on a barrier within the range of angles for total external reflection. The transmission coefficients of barriers with a relative rotation of $\pmπ/3$ are related by symmetry. This allows two barriers to be used to demonstrate that the current is valley polarized. A soft-walled potential is used to model the barrier and the method used to find the transmission coefficients is explained. In the case of monolayer TMDs, a 4-band k.p Hamiltonian is used and the k.p parameters are obtained by fitting to ab-initio band structures.
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Submitted 9 September, 2021; v1 submitted 8 November, 2019;
originally announced November 2019.
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Probing the local electronic structure of isovalent Bi atoms in InP
Authors:
C. M. Krammel,
A. R. da Cruz,
M. E. Flatté,
M. Roy,
P. A. Maksym,
L. Y. Zhang,
K. Wang,
Y. Y. Li,
S. M. Wang,
P. M. Koenraad
Abstract:
Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled state X-STM images on the natural $\{110\}$ cleavage planes. The Bi impurity state has a hig…
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Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled state X-STM images on the natural $\{110\}$ cleavage planes. The Bi impurity state has a highly anisotropic bowtie-like structure and extends over several lattice sites. These Bi-induced charge redistributions extend along the $\left\langle 110\right\rangle$ directions, which define the bowtie-like structures we observe. Local tight-binding calculations reproduce the experimentally observed spatial structure of the Bi impurity state. In addition, the influence of the Bi atoms on the electronic structure is investigated in scanning tunneling spectroscopy measurements. These measurements show that Bi induces a resonant state in the valence band, which shifts the band edge towards higher energies. This is in good agreement to first principles calculations. Furthermore, we show that the energetic position of the Bi induced resonance and its influence on the onset of the valence band edge depend crucially on the position of the Bi atoms relative to the cleavage plane.
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Submitted 31 January, 2020; v1 submitted 4 June, 2019;
originally announced June 2019.
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Magnetic field controlled vacuum charge in graphene quantum dots with a mass gap
Authors:
P. A. Maksym,
H. Aoki
Abstract:
The effect of a magnetic field on the charged vacuum is investigated. The field dependence of the energy levels causes jumps in the total vacuum charge that occur whenever an energy level crosses the Fermi level and this leads to re-entrant cycles of vacuum charging and discharging. In atomic systems these effects require astrophysical magnetic fields of around 10^8 T but in graphene with a mass g…
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The effect of a magnetic field on the charged vacuum is investigated. The field dependence of the energy levels causes jumps in the total vacuum charge that occur whenever an energy level crosses the Fermi level and this leads to re-entrant cycles of vacuum charging and discharging. In atomic systems these effects require astrophysical magnetic fields of around 10^8 T but in graphene with a mass gap they occur in laboratory fields of about 1 T or lower. It is suggested that an electrostatic graphene quantum dot defined by a gate electrode provides a solid state model of the as yet unobserved charged vacuum as well as a model of an atomic system in an extreme astrophysical environment. Phase diagrams are computed to show how the total vacuum charge depends on the confining potential strength and applied magnetic field. In addition the field dependence of the vacuum charge density is investigated and experimental consequences are discussed.
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Submitted 23 November, 2012;
originally announced November 2012.
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Proposal for a magnetic field induced graphene dot
Authors:
P. A. Maksym,
M. Roy,
M. F. Craciun,
M. Yamamoto,
S. Tarucha,
H. Aoki
Abstract:
Quantum dots induced by a strong magnetic field applied to a single layer of graphene in the perpendicular direction are investigated. The dot is defined by a model potential which consists of a well of depth $ΔV$ relative to a flat asymptotic part and quantum states formed from the zeroth Landau level are considered. The energy of the dot states cannot be lower than $-ΔV$ relative to the asymptot…
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Quantum dots induced by a strong magnetic field applied to a single layer of graphene in the perpendicular direction are investigated. The dot is defined by a model potential which consists of a well of depth $ΔV$ relative to a flat asymptotic part and quantum states formed from the zeroth Landau level are considered. The energy of the dot states cannot be lower than $-ΔV$ relative to the asymptotic potential. Consequently, when $ΔV$ is chosen to be about half of the gap between the zeroth and first Landau levels, the dot states are isolated energetically in the gap between Landau level 0 and Landau level -1. This is confirmed with numerical calculations of the magnetic field dependent energy spectrum and the quantum states. Remarkably, an antidot formed by reversing the sign of $ΔV$ also confines electrons but in the energy region between Landau level 0 and Landau level +1. This unusual behaviour gives an unambiguous signal of the novel physics of graphene quantum dots.
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Submitted 23 July, 2010;
originally announced July 2010.
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Magnetic field induced confinement-deconfinement transition in graphene quantum dots
Authors:
G. Giavaras,
P. A. Maksym,
M. Roy
Abstract:
Massless Dirac particles cannot be confined by an electrostatic potential. This is a problem for making graphene quantum dots but confinement can be achieved with a magnetic field and here, general conditions for confined and deconfined states are derived. There is a class of potentials for which the character of the state can be controlled at will. Then a confinement-deconfinement transition oc…
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Massless Dirac particles cannot be confined by an electrostatic potential. This is a problem for making graphene quantum dots but confinement can be achieved with a magnetic field and here, general conditions for confined and deconfined states are derived. There is a class of potentials for which the character of the state can be controlled at will. Then a confinement-deconfinement transition occurs which allows the Klein paradox to be probed experimentally in graphene dots.
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Submitted 20 May, 2008;
originally announced May 2008.
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Accurate Model of a Vertical Pillar Quantum Dot
Authors:
P. A. Maksym,
Y. Nishi,
D. G. Austing,
T. Hatano,
L. P. Kouwenhoven,
H. Aoki,
S. Tarucha
Abstract:
An accurate model of a vertical pillar quantum dot is described. The full three dimensional structure of the device containing the dot is taken into account and this leads to an effective two dimensional model in which electrons move in the two lateral dimensions, the confinement is parabolic and the interaction potential is very different from the bare Coulomb potential. The potentials are foun…
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An accurate model of a vertical pillar quantum dot is described. The full three dimensional structure of the device containing the dot is taken into account and this leads to an effective two dimensional model in which electrons move in the two lateral dimensions, the confinement is parabolic and the interaction potential is very different from the bare Coulomb potential. The potentials are found from the device structure and a few adjustable parameters. Numerically stable calculation procedures for the interaction potential are detailed and procedures for deriving parameter values from experimental addition energy and chemical potential data are described. The model is able to explain magnetic field dependent addition energy and chemical potential data for an individual dot to an accuracy of about 5%, the accuracy level needed to determine ground state quantum numbers from experimental transport data. Applications to excited state transport data are also described.
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Submitted 20 April, 2008;
originally announced April 2008.
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Transitions between electron-molecule states in electrostatic quantum dots
Authors:
P. A. Maksym,
H. Aoki
Abstract:
Intermediate spin states that occur in electrostatic dots in the magnetic field regime just beyond the maximum density droplet are investigated. The 5-electron system is studied with exact diagonalization and group theory. The results indicate that the intermediate spin states are mixed symmetry states with a superposition of 5- and 4-fold electron-molecule configurations. A superposition of 5-…
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Intermediate spin states that occur in electrostatic dots in the magnetic field regime just beyond the maximum density droplet are investigated. The 5-electron system is studied with exact diagonalization and group theory. The results indicate that the intermediate spin states are mixed symmetry states with a superposition of 5- and 4-fold electron-molecule configurations. A superposition of 5- and 4-fold correlation functions is found to reproduce the exact mixed symmetry pair correlation function to around 2%.
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Submitted 29 June, 2006;
originally announced June 2006.
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Intermediate Low Spin States in a Few-electron Quantum Dot in the $ν\le 1$ Regime
Authors:
Y. Nishi,
P. A. Maksym,
D. G. Austing,
T. Hatano,
L. P. Kouwenhoven,
H. Aoki,
S. Tarucha
Abstract:
We study the effects of electron-electron interactions in a circular few-electron vertical quantum dot in such a strong magnetic field that the filling factor $ν\le 1$. We measure excitation spectra and find ground state transitions beyond the maximum density droplet ($ν=1$) region. We compare the observed spectra with those calculated by exact diagonalization to identify the ground state quantu…
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We study the effects of electron-electron interactions in a circular few-electron vertical quantum dot in such a strong magnetic field that the filling factor $ν\le 1$. We measure excitation spectra and find ground state transitions beyond the maximum density droplet ($ν=1$) region. We compare the observed spectra with those calculated by exact diagonalization to identify the ground state quantum numbers, and find that intermediate low-spin states occur between adjacent spin-polarized magic number states.
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Submitted 12 December, 2005;
originally announced December 2005.
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Vertically coupled double quantum dots in magnetic fields
Authors:
Hiroshi Imamura,
Peter A. Maksym,
Hideo Aoki
Abstract:
Ground-state and excited-state properties of vertically coupled double quantum dots are studied by exact diagonalization. Magic-number total angular momenta that minimize the total energy are found to reflect a crossover between electron configurations dominated by intra-layer correlation and ones dominated by inter-layer correlation. The position of the crossover is governed by the strength of…
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Ground-state and excited-state properties of vertically coupled double quantum dots are studied by exact diagonalization. Magic-number total angular momenta that minimize the total energy are found to reflect a crossover between electron configurations dominated by intra-layer correlation and ones dominated by inter-layer correlation. The position of the crossover is governed by the strength of the inter-layer electron tunneling and magnetic field. The magic numbers should have an observable effect on the far infra-red optical absorption spectrum, since Kohn's theorem does not hold when the confinement potential is different for two dots. This is indeed confirmed here from a numerical calculation that includes Landau level mixing. Our results take full account of the effect of spin degrees of freedom. A key feature is that the total spin, $S$, of the system and the magic-number angular momentum are intimately linked because of strong electron correlation. Thus $S$ jumps hand in hand with the total angular momentum as the magnetic field is varied. One important consequence of this is that the spin blockade (an inhibition of single-electron tunneling) should occur in some magnetic field regions because of a spin selection rule. Owing to the flexibility arising from the presence of both intra-layer and inter-layer correlations, the spin blockade is easier to realize in double dots than in single dots.
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Submitted 24 January, 1999;
originally announced January 1999.
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Spin-Blockade in Single and Double Quantum Dots in Magnetic Fields: a Correlation Effect
Authors:
Hiroshi Imamura,
Hideo Aoki,
Peter A. Maksym
Abstract:
The total spin of correlated electrons in a quantum dot changes with magnetic field and this effect is generally linked to the change in the total angular momentum from one magic number to another, which can be understood in terms of an `electron molecule' picture for strong fields. Here we propose to exploit this fact to realize a spin blockade, i.e., electrons are prohibited to tunnel at speci…
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The total spin of correlated electrons in a quantum dot changes with magnetic field and this effect is generally linked to the change in the total angular momentum from one magic number to another, which can be understood in terms of an `electron molecule' picture for strong fields. Here we propose to exploit this fact to realize a spin blockade, i.e., electrons are prohibited to tunnel at specific values of the magnetic field. The spin-blockade regions have been obtained by calculating both the ground and excited states. In double dots the spin-blockade condition is found to be less stringent than in single dots.
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Submitted 25 December, 1997;
originally announced December 1997.
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Symmetry of `molecular' configurations of interacting electrons in a quantum dot in strong magnetic fields
Authors:
Hiroshi Imamura,
Peter A. Maksym,
Hideo Aoki
Abstract:
A molecular description for magic-number configurations of interacting electrons in a quantum dot in high magnetic fields developed by one of the authors has been elaborated for four, five and six electron dots. For four electrons, the magic spin-singlet states are found to alternate between two different resonating valence bond (RVB)-like states. For the five-electron spin-polarized case, the m…
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A molecular description for magic-number configurations of interacting electrons in a quantum dot in high magnetic fields developed by one of the authors has been elaborated for four, five and six electron dots. For four electrons, the magic spin-singlet states are found to alternate between two different resonating valence bond (RVB)-like states. For the five-electron spin-polarized case, the molecular description is shown to work for the known phenomenon of magic-number sequences that correspond to both the N-fold symmetric ring configuration and a $(N-1)$-fold symmetric one with a center electron. A six-electron dot is shown here to have an additional feature in which inclusion of quantum mechanical mixing between classical configurations, which are deformed and degenerate, restores the N-fold symmetry and reproduces the ground-state energy accurately.
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Submitted 25 December, 1997;
originally announced December 1997.
