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Laser-induced electron dynamics and surface modification in ruthenium thin films
Authors:
Fedor Akhmetov,
Igor Milov,
Sergey Semin,
Fabio Formisano,
Nikita Medvedev,
Jacobus M. Sturm,
Vasily V. Zhakhovsky,
Igor A. Makhotkin,
Alexey Kimel,
Marcelo Ackermann
Abstract:
We performed the experimental and theoretical study of the heating and damaging of ruthenium thin films induced by femtosecond laser irradiation. Results of an optical pump-probe thermoreflectance experiment with rotating sample allowing to significantly reduce heat accumulation in irradiated spot are presented. We show the evolution of surface morphology from growth of a heat-induced oxide layer…
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We performed the experimental and theoretical study of the heating and damaging of ruthenium thin films induced by femtosecond laser irradiation. Results of an optical pump-probe thermoreflectance experiment with rotating sample allowing to significantly reduce heat accumulation in irradiated spot are presented. We show the evolution of surface morphology from growth of a heat-induced oxide layer at low and intermediate laser fluences to cracking and grooving at high fluences. Theoretical analysis of pump-probe signal allows us to relate behavior of hot electrons in ruthenium to the Fermi smearing mechanism. The analysis of heating is performed with the two-temperature modeling and molecular dynamics simulation, results of which demonstrate that the calculated melting threshold is higher than experimental damage threshold. We attribute it to heat-induced surface stresses leading to cracking which accumulates to more severe damage morphology. Our results provide an upper limit for operational conditions for ruthenium optics and also direct to further studies of the Fermi smearing mechanism in other transition metals.
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Submitted 22 June, 2022; v1 submitted 17 June, 2022;
originally announced June 2022.
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The refined EUV mask model
Authors:
I. A. Makhotkin,
M. Wu,
V. Soltwisch,
F. Scholze,
V. Philipsen
Abstract:
A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for high-NA EUV photo-lithography (EUVL) imaging. The model is derived by combined analysis of the measured EUV and X-ray reflectivity of a state-of-the-art mask blank. T…
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A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for high-NA EUV photo-lithography (EUVL) imaging. The model is derived by combined analysis of the measured EUV and X-ray reflectivity of a state-of-the-art mask blank. These two sets of measurements were analyzed using a combined free-form analysis procedure that delivers high-resolution X-ray and EUV optical constant depth profiles based on self-adapted sets of sublayers as thin as 0.25nm providing a more accurate description of the reflectivity than obtained from only EUV reflectivity. 'Free-form analysis' means that the shape of the layer-interfaces in the model is determined experimentally and is not given a priori by the structure model. To reduce the numerical effort for EUV imaging simulations a low-resolution model of the multilayer and absorber stack with sublayer thicknesses larger than 2nm, that fits to only the EUV reflectance, was derived from the high-resolution model. Rigorous high-NA EUVL simulations were done to compare the performance of the new model to our previous work.
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Submitted 19 December, 2019;
originally announced December 2019.
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A semi-analytical approach for the characterization of ordered 3D nano structures using grazing-incidence X-ray fluorescence
Authors:
K. V. Nikolaev,
V. Soltwisch,
P. Hoenicke,
F. Scholze,
J. de la Rie,
S. N. Yakunin,
I. A. Makhotkin,
R. W. E. van de Kruijs,
F. Bijkerk
Abstract:
Following the recent demonstration of grazing-incidence X-ray fluorescence (GIXRF) based characterization of the 3D atomic distribution of different elements and dimensional parameters of periodic nanoscale structures, this work presents a new computational scheme for the simulation of the angular dependent fluorescence intensities from such periodic 2D and 3D nanoscale structures. The computation…
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Following the recent demonstration of grazing-incidence X-ray fluorescence (GIXRF) based characterization of the 3D atomic distribution of different elements and dimensional parameters of periodic nanoscale structures, this work presents a new computational scheme for the simulation of the angular dependent fluorescence intensities from such periodic 2D and 3D nanoscale structures. The computational scheme is based on the dynamical diffraction theory in many-beam approximation, which allows to derive a semi-analytical solution to the Sherman equation in a linear-algebraic form. The computational scheme has been used to analyze recently published GIXRF data measured on 2D Si3N4 lamellar gratings, as well as on periodically structured 3D Cr nano pillars. Both the dimensional and structural parameters of these nanostructures have been reconstructed by fitting numeric simulations to the experimental GIXRF data. Obtained results show good agreement with nominal parameters used in the manufacturing of the structures, as well as with reconstructed parameters based on the previously published finite element method simulations, in case of the Si3N4 grating.
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Submitted 30 August, 2019;
originally announced August 2019.
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Towards Time-Resolved Atomic Structure Determination by X-Ray Standing Waves at a Free-Electron Laser
Authors:
Giuseppe Mercurio,
Igor A. Makhotkin,
Igor Milov,
Young Yong Kim,
Ivan A. Zaluzhnyy,
Siarhei Dziarzhytski,
Lukas Wenthaus,
Ivan A. Vartanyants,
Wilfried Wurth
Abstract:
We demonstrate the structural sensitivity and accuracy of the standing wave technique at a high repetition rate free-electron laser, FLASH at DESY in Hamburg, by measuring the photoelectron yield from the surface SiO2 of Mo/Si multilayers. These experiments open up the possibility to obtain unprecedented structural information of adsorbate and surface atoms with picometer spatial accuracy and femt…
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We demonstrate the structural sensitivity and accuracy of the standing wave technique at a high repetition rate free-electron laser, FLASH at DESY in Hamburg, by measuring the photoelectron yield from the surface SiO2 of Mo/Si multilayers. These experiments open up the possibility to obtain unprecedented structural information of adsorbate and surface atoms with picometer spatial accuracy and femtosecond temporal resolution. This technique will substantially contribute to a fundamental understanding of chemical reactions at catalytic surfaces and the structural dynamics of superconductors.
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Submitted 12 June, 2018;
originally announced June 2018.
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Model independent X-ray standing wave analysis of periodic multilayer structures
Authors:
S. N. Yakunin,
I. A. Makhotkin,
M. A. Chuev,
E. M. Pashaev,
E. Zoethout,
E. Louis,
R. W. E. van de Kruijs,
S. Yu. Seregin,
I. A. Subbotin,
D. V. Novikov,
F. Bijkerk,
M. V. Kovalchuk
Abstract:
We present a model independent approach for the reconstruction of the atomic concentration profile in a nanoscale layered structure, as measured using the X-ray fluorescence yield modulated by an X-ray standing wave (XSW). The approach is based on the direct regularized solution of the system of linear equations that characterizes the fluorescence yield. The suggested technique was optimized for,…
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We present a model independent approach for the reconstruction of the atomic concentration profile in a nanoscale layered structure, as measured using the X-ray fluorescence yield modulated by an X-ray standing wave (XSW). The approach is based on the direct regularized solution of the system of linear equations that characterizes the fluorescence yield. The suggested technique was optimized for, but not limited to, the analysis of periodic layered structures where the XSW is formed under Bragg conditions. The developed approach was applied to the reconstruction of the atomic concentration profiles for LaN/BN multilayers with 50 periods of 35 A thick layers. The object is especially difficult to analyse with traditional methods, as the estimated thickness of the interface region between the constituent materials is comparable to the individual layer thicknesses. However, using the suggested technique it was possible to reconstruct the La atomic profile, showing that the La atoms stay localized within the LaN layers and interfaces and do not diffuse into the BN layer. The atomic distributions were found with an accuracy of 1 A. The analysis of the Kr fluorescence yield showed that Kr atoms originating from the sputter gas are trapped in both the LaN-on-BN and the BN-on-LaN interfaces.
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Submitted 12 September, 2013;
originally announced September 2013.
