Showing 1–2 of 2 results for author: Makarovsky, O N

Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

Authors: A. D. Giddings, O. N. Makarovsky, M. N. Khalid, S. Yasin, K. W. Edmonds, R. P. Campion, J. Wunderlich, T. Jungwirth, D. A. Williams, B. L. Gallagher, C. T. Foxon

Abstract: We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theor… ▽ More We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consistent with the Coulomb blockade AMR mechanism. △ Less

Submitted 1 July, 2008; v1 submitted 24 March, 2008; originally announced March 2008.

Comments: 10 pages, 5 figures

Journal ref: New J. Phys. 10, 085004 (2008)

Magnetoresistance of Si(001) MOSFETs with high concentration of electrons

Authors: L. Smrcka, O. N. Makarovsky, S. G. Schemenchinskii, P. Vasek, V. Jurka

Abstract: We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlin… ▽ More We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlinear field dependence of the Hall resistance accompany the novel oscillations at high carrier concentrations. The heating of the 2D electron layers leads to suppression of the observed anomalies. △ Less

Submitted 12 June, 2003; originally announced June 2003.

Comments: 4 pages, 6 figures, elsart/PHYEAUTH macros; to be presented on the EP2DS-15 Conference in Nara, Japan