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A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
Authors:
E. E. Vdovin,
M. T. Greenaway,
Yu. N. Khanin,
S. V. Morozov,
O. Makarovsky,
A. Patanè,
A. Mishchenko,
S. Slizovskiy,
V. I. Fal'ko,
A. K. Geim,
K. S. Novoselov,
L. Eaves
Abstract:
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its…
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Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.
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Submitted 4 July, 2023;
originally announced July 2023.
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Universal mobility characteristics of graphene originating from electron/hole scattering by ionised impurities
Authors:
Jonathan H. Gosling,
Oleg Makarovsky,
Feiran Wang,
Nathan D Cottam,
Mark T. Greenaway,
Amalia Patanè,
Ricky Wildman,
Christopher J. Tuck,
Lyudmila Turyanska,
T. Mark Fromhold
Abstract:
Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's carrier mobility and the variation of its electrical conductance with carrier density. Our model of graphene conductivity is based on a convolution of carrier densit…
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Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's carrier mobility and the variation of its electrical conductance with carrier density. Our model of graphene conductivity is based on a convolution of carrier density and its uncertainty, which reproduces the observed universality. Taking a single conductance measurement as input, this model accurately predicts the full shape of the conductance versus carrier density curves for a wide range of reported graphene samples. We verify the convolution model by numerically solving the Boltzmann transport equation to analyse in detail the effects of charged impurity scattering on carrier mobility. In this model, we also include optical phonons, which relax high-energy charge carriers for small impurity densities. Our numerical and analytical results both capture the universality observed in experiment and provide a way to estimate all key transport parameters of graphene devices. Our results demonstrate how the carrier mobility can be predicted and controlled, thereby providing insights for engineering the properties of 2D materials and heterostructures.
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Submitted 16 May, 2020;
originally announced May 2020.
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Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
Authors:
M. Wang,
C. Andrews,
S. Reimers,
O. J. Amin,
P. Wadley,
R. P. Campion,
S. F. Poole,
J. Felton,
K. W. Edmonds,
B. L. Gallagher,
A. W. Rushforth,
O. Makarovsky,
K. Gas,
M. Sawicki,
D. Kriegner,
J. Zubac,
K. Olejnik,
V. Novak,
T. Jungwirth,
M. Shahrokhvand,
U. Zeitler,
S. S. Dhesi,
F. Maccherozzi
Abstract:
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b…
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Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.
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Submitted 21 June, 2021; v1 submitted 27 November, 2019;
originally announced November 2019.
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Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
Authors:
M. T. Greenaway,
E. E. Vdovin,
D. Ghazaryan,
A. Misra,
A. Mishchenko,
Y. Cao,
Z. Wang,
J. R. Wallbank,
M. Holwill,
Yu. N. Khanin,
S. V. Morozov,
K. Watanabe,
T. Taniguchi,
O. Makarovsky,
T. M. Fromhold,
A. Patanè,
A. K. Geim,
V. I. Fal'ko,
K. S. Novoselov,
L. Eaves
Abstract:
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical…
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Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer hBN barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.
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Submitted 14 December, 2018; v1 submitted 2 October, 2018;
originally announced October 2018.
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Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
Authors:
E. E. Vdovin,
A. Mishchenko,
M. T. Greenaway,
M. J. Zhu,
D. Ghazaryan,
A. Misra,
Y. Cao,
S. V. Morozov,
O. Makarovsky,
A. Patanè,
G. J. Slotman,
M. I. Katsnelson,
A. K. Geim,
K. S. Novoselov,
L. Eaves
Abstract:
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence i…
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We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.
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Submitted 8 December, 2015; v1 submitted 7 December, 2015;
originally announced December 2015.
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Resonant tunnelling between the chiral Landau states of twisted graphene lattices
Authors:
M. T. Greenaway,
E. E. Vdovin,
A. Mishchenko,
O. Makarovsky,
A. Patanè,
J. R. Wallbank,
Y. Cao,
A. V. Kretinin,
M. J. Zhu,
S. V. Morozov,
V. I. Fal'ko,
K. S. Novoselov,
A. K. Geim,
T. M. Fromhold,
L. Eaves
Abstract:
A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers t…
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A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. An applied magnetic field quantises graphene's gapless conduction and valence band states into discrete Landau levels, allowing us to resolve individual inter-Landau level transitions and thereby demonstrate that the energy, momentum and chiral properties of the electrons are conserved in the tunnelling process. We also demonstrate that the change in the semiclassical cyclotron trajectories, following a tunnelling event, is a form of Klein tunnelling for inter-layer transitions.
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Submitted 21 October, 2015; v1 submitted 21 September, 2015;
originally announced September 2015.
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Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
Authors:
A. Mishchenko,
J. S. Tu,
Y. Cao,
R. V. Gorbachev,
J. R. Wallbank,
M. T. Greenaway,
V. E. Morozov,
S. V. Morozov,
M. J. Zhu,
S. L. Wong,
F. Withers,
C. R. Woods,
Y. -J. Kim,
K. Watanabe,
T. Taniguchi,
E. E. Vdovin,
O. Makarovsky,
T. M. Fromhold,
V. I. Falko,
A. K. Geim,
L. Eaves,
K. S. Novoselov
Abstract:
Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic…
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Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology.
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Submitted 8 September, 2014;
originally announced September 2014.
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High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As
Authors:
M. Wang,
K. W. Edmonds,
B. L. Gallagher,
A. W. Rushforth,
O. Makarovsky,
A. Patanè,
R. P. Campion,
C. T. Foxon,
V. Novak,
T. Jungwirth
Abstract:
We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical cond…
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We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band.
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Submitted 11 March, 2013;
originally announced March 2013.
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Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
Authors:
Thanasis Georgiou,
Rashid Jalil,
Branson D. Belle,
Liam Britnell,
Roman V. Gorbachev,
Sergey V. Morozov,
Yong-** Kim,
Ali Gholinia,
Sarah J. Haigh,
Oleg Makarovsky,
Laurence Eaves,
Leonid A. Ponomarenko,
Andre K. Geim,
Kostya S. Novoselov,
Artem Mishchenko
Abstract:
The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating ph…
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The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates.
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Submitted 21 November, 2012;
originally announced November 2012.
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Correspondence on "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band" by M. Dobrowolska et al
Authors:
K. W. Edmonds,
B. L. Gallagher,
M. Wang,
A. W. Rushforth,
O. Makarovsky,
A. Patane,
R. P. Campion,
C. T. Foxon,
V. Novak,
T. Jungwirth
Abstract:
Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus the magnetic order in (Ga,Mn)As is not consistent with the isolated impurity band scenario.
Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus the magnetic order in (Ga,Mn)As is not consistent with the isolated impurity band scenario.
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Submitted 16 November, 2012;
originally announced November 2012.
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Controlling high-frequency collective electron dynamics via single-particle complexity
Authors:
N. Alexeeva,
M. T. Greenaway,
A. G. Balanov,
O. Makarovsky,
A. Patanè,
M. B. Gaifullin,
F. Kusmartsev,
T. M. Fromhold
Abstract:
We demonstrate, through experiment and theory, enhanced high-frequency current oscillations due to magnetically-induced conduction resonances in superlattices. Strong increase in the ac power originates from complex single-electron dynamics, characterized by abrupt resonant transitions between unbound and localized trajectories, which trigger and shape propagating charge domains. Our data demonstr…
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We demonstrate, through experiment and theory, enhanced high-frequency current oscillations due to magnetically-induced conduction resonances in superlattices. Strong increase in the ac power originates from complex single-electron dynamics, characterized by abrupt resonant transitions between unbound and localized trajectories, which trigger and shape propagating charge domains. Our data demonstrate that external fields can tune the collective behavior of quantum particles by imprinting configurable patterns in the single-particle classical phase space.
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Submitted 21 July, 2012;
originally announced July 2012.
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Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As
Authors:
J. Masek,
F. Maca,
J. Kudrnovsky,
O. Makarovsky,
L. Eaves,
R. P. Campion,
K. W. Edmonds,
A. W. Rushforth,
C. T. Foxon,
B. L. Gallagher,
V. Novak,
Jairo Sinova,
T. Jungwirth
Abstract:
We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor;…
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We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor; this microscopic spectral character is consistent with the physical premise of the k.p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire do** range we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As.
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Submitted 27 July, 2010;
originally announced July 2010.
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Sensitive detection of photoexcited carriers by resonant tunneling through a single quantum dot
Authors:
E. E. Vdovin,
O. Makarovsky,
A. Patane,
L. Eaves,
Yu. N. Khanin
Abstract:
We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of these holes lowers the electrostatic energy of the quantum dot state and switches the current carrying channel from fully open to fully closed with a high on/o…
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We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of these holes lowers the electrostatic energy of the quantum dot state and switches the current carrying channel from fully open to fully closed with a high on/off ratio (> 50). The device can be reset by means of a bias voltage pulse. These properties are of interest for charge sensitive photon counting devices.
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Submitted 9 July, 2009;
originally announced July 2009.
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Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions
Authors:
A. D. Giddings,
O. N. Makarovsky,
M. N. Khalid,
S. Yasin,
K. W. Edmonds,
R. P. Campion,
J. Wunderlich,
T. Jungwirth,
D. A. Williams,
B. L. Gallagher,
C. T. Foxon
Abstract:
We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theor…
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We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consistent with the Coulomb blockade AMR mechanism.
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Submitted 1 July, 2008; v1 submitted 24 March, 2008;
originally announced March 2008.
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Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot
Authors:
E. E. Vdovin,
Yu. N. Khanin,
O. Makarovsky,
A. Patane,
L. Eaves,
M. Henini,
C. J. Mellor,
K. A. Benedict,
R. Airey
Abstract:
We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the…
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We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.
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Submitted 23 March, 2007;
originally announced March 2007.
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Magnetoresistance of Si(001) MOSFETs with high concentration of electrons
Authors:
L. Smrcka,
O. N. Makarovsky,
S. G. Schemenchinskii,
P. Vasek,
V. Jurka
Abstract:
We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlin…
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We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlinear field dependence of the Hall resistance accompany the novel oscillations at high carrier concentrations. The heating of the 2D electron layers leads to suppression of the observed anomalies.
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Submitted 12 June, 2003;
originally announced June 2003.
