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Sha** non-reciprocal caustic spin-wave beams
Authors:
Dinesh Wagle,
Daniel Stoeffler,
Loic Temdie,
Mojtaba Taghipour Kaffash,
Vincent Castel,
H. Majjad,
R. Bernard,
Yves Henry,
Matthieu Bailleul,
M. Benjamin Jungfleisch,
Vincent Vlaminck
Abstract:
A caustic is a mathematical concept describing the beam formation when the beam envelope is reflected or refracted by a manifold. While caustics are common in a wide range of physical systems, caustics typically exhibit a reciprocal wave propagation and are challenging to control. Here, we utilize the highly anisotropic dispersion and inherent non-reciprocity of a magnonic system to shape non-reci…
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A caustic is a mathematical concept describing the beam formation when the beam envelope is reflected or refracted by a manifold. While caustics are common in a wide range of physical systems, caustics typically exhibit a reciprocal wave propagation and are challenging to control. Here, we utilize the highly anisotropic dispersion and inherent non-reciprocity of a magnonic system to shape non-reciprocal emission of caustic-like spin wave beams in an extended 200 nm thick yttrium iron garnet (YIG) film from a nano-constricted rf waveguide. We introduce a near-field diffraction model to study spin-wave beamforming in homogeneous in-plane magnetized thin films, and reveal the propagation of non-reciprocal spin-wave beams directly emitted from the nanoconstriction by spatially resolved micro-focused Brillouin light spectroscopy (BLS). The experimental results agree well with both micromagnetic simulation, and the near-field diffraction model. The proposed method can be readily implemented to study spin-wave interference at the sub-micron scale, which is central to the development of wave-based computing applications and magnonic devices.
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Submitted 23 April, 2024;
originally announced April 2024.
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Symmetry-dependent dielectric screening of optical phonons in monolayer graphene
Authors:
Loïc Moczko,
Sven Reichardt,
Aditya Singh,
Xin Zhang,
Luis E. Parra López,
Joanna L. P. Wolff,
Aditi Raman Moghe,
Etienne Lorchat,
Rajendra Singh,
Kenji Watanabe,
Takashi Taniguchi,
Hicham Majjad,
Michelangelo Romeo,
Arnaud Gloppe,
Ludger Wirtz,
Stéphane Berciaud
Abstract:
Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn anomalies in the phonon dispersion, providing an image of the Fermi surface in a non-electronic observable. Kohn anomalies become prominent in low-dimensional syste…
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Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn anomalies in the phonon dispersion, providing an image of the Fermi surface in a non-electronic observable. Kohn anomalies become prominent in low-dimensional systems, in particular in graphene, where they appear as sharp kinks in the in-plane optical phonon branches. However, in spite of intense research efforts on electron-phonon coupling in graphene and related van der Waals heterostructures, little is known regarding the links between the symmetry properties of optical phonons at and near Kohn anomalies and their sensitivity towards the local environment. Here, using inelastic light scattering (Raman) spectroscopy, we investigate a set of custom-designed graphene-based van der Waals heterostructures, wherein dielectric screening is finely controlled at the atomic layer level. We demonstrate experimentally and explain theoretically that, depending exclusively on their symmetry properties, the two main Raman modes of graphene react differently to the surrounding environment. While the Raman-active near-zone-edge optical phonons in graphene undergo changes in their frequencies due to the neighboring dielectric environment, the in-plane, zone-centre optical phonons are symmetry-protected from the influence of the latter. These results shed new light on the unique electron-phonon coupling properties in graphene and related systems and provide invaluable guidelines to characterise dielectric screening in van der Waals heterostructures and moiré superlattices.
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Submitted 20 October, 2023;
originally announced October 2023.
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Probing Spin Wave Diffraction Patterns of Curved Antennas
Authors:
Loic Temdie,
Vincent Castel,
Vincent Vlaminck,
Matthias Benjamin Jungfleisch,
Romain Bernard,
Hicham Majjad,
Daniel Stoeffler,
Yves Henry,
Matthieu Bailleul
Abstract:
We report on the dependence of curvilinear shaped coplanar waveguides on the near-field diffraction patterns of spin waves propagating in perpendicularly magnetized thin films. Implementing the propagating spin waves spectroscopy techniques on either concentrically or eccentrically shaped antennas, we show how the link budget is directly affected by the spin wave interference, in good agreement wi…
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We report on the dependence of curvilinear shaped coplanar waveguides on the near-field diffraction patterns of spin waves propagating in perpendicularly magnetized thin films. Implementing the propagating spin waves spectroscopy techniques on either concentrically or eccentrically shaped antennas, we show how the link budget is directly affected by the spin wave interference, in good agreement with near-field diffraction simulations. This work demonstrates the feasibility to inductively probe a magnon interference pattern with a resolution down to 1$μ$m$^2$, and provides a methodology for sha** spin wave beams from an antenna design. This methodology is successfully implemented in the case study of a spin wave Young's interference experiment.
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Submitted 11 September, 2023;
originally announced September 2023.
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High wave vector non-reciprocal spin wave beams
Authors:
L. Temdie,
V. Castel,
C. Dubs,
G. Pradhan,
J. Solano,
H. Majjad,
R. Bernard,
Y. Henry,
M. Bailleul,
V. Vlaminck
Abstract:
We report unidirectional transmission of micron-wide spin waves beams in a 55 nm thin YIG. We downscaled a chiral coupling technique implementing Ni80Fe20 nanowires arrays with different widths and lattice spacing to study the non-reciprocal transmission of exchange spin waves down to lambda = 80 nm. A full spin wave spectroscopy analysis of these high wavevector coupled-modes shows some difficult…
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We report unidirectional transmission of micron-wide spin waves beams in a 55 nm thin YIG. We downscaled a chiral coupling technique implementing Ni80Fe20 nanowires arrays with different widths and lattice spacing to study the non-reciprocal transmission of exchange spin waves down to lambda = 80 nm. A full spin wave spectroscopy analysis of these high wavevector coupled-modes shows some difficulties to characterize their propagation properties, due to both the non-monotonous field dependence of the coupling efficiency, and also the inhomogeneous stray field from the nanowires.
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Submitted 12 January, 2023; v1 submitted 10 November, 2022;
originally announced November 2022.
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Dynamically-enhanced strain in atomically thin resonators
Authors:
Xin Zhang,
Kevin Makles,
Léo Colombier,
Dominik Metten,
Hicham Majjad,
Pierre Verlot,
Stéphane Berciaud
Abstract:
Graphene and related two-dimensional (2D) materials associate remarkable mechanical, electronic, optical and phononic properties. As such, 2D materials are promising for hybrid systems that couple their elementary excitations (excitons, phonons) to their macroscopic mechanical modes. These built-in systems may yield enhanced strain-mediated coupling compared to bulkier architectures, e.g., compris…
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Graphene and related two-dimensional (2D) materials associate remarkable mechanical, electronic, optical and phononic properties. As such, 2D materials are promising for hybrid systems that couple their elementary excitations (excitons, phonons) to their macroscopic mechanical modes. These built-in systems may yield enhanced strain-mediated coupling compared to bulkier architectures, e.g., comprising a single quantum emitter coupled to a nano-mechanical resonator. Here, using micro-Raman spectroscopy on pristine monolayer graphene drums, we demonstrate that the macroscopic flexural vibrations of graphene induce dynamical optical phonon softening. This softening is an unambiguous fingerprint of dynamically-induced tensile strain that reaches values up to $\mathbf{\approx 4 \times 10^{-4}}$ under strong non-linear driving. Such non-linearly enhanced strain exceeds the values predicted for harmonic vibrations with the same root mean square (RMS) amplitude by more than one order of magnitude. Our work holds promise for dynamical strain engineering and dynamical strain-mediated control of light-matter interactions in 2D materials and related heterostructures.
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Submitted 5 November, 2020; v1 submitted 24 March, 2020;
originally announced March 2020.
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Optically rewritable memory in a graphene/ferroelectric-photovoltaic heterostructure
Authors:
D. Kundys,
A. Cascales,
A. S. Makhort,
H. Majjad,
F. Chevrier,
B. Doudin,
A. Fedrizzi,
B. Kundys
Abstract:
Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical flue…
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Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical fluence. The competition between light-induced charge generation in ferroelectric-photovoltaic substrate with subsequent relaxation processes provides the selective photocarrier trap** control affecting the do** of 2D overlayer. These findings open the road to photonic control of 2D devices for all -optical modulators and a variety of all-optical logic circuits, memories and field-effect transistors.
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Submitted 12 March, 2021; v1 submitted 18 March, 2020;
originally announced March 2020.
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Multi-state and non-volatile control of graphene conductivity with surface electric fields
Authors:
V. Iurchuk,
H. Majjad,
F. Chevrier,
D. Kundys,
B. Leconte,
B. Doudin,
B. Kundys
Abstract:
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is demonstrated under low sub-coercive electric fields, with a susceptibility exceeding by more than two orders of magnitude those reported in a vertical gating geometry.…
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Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is demonstrated under low sub-coercive electric fields, with a susceptibility exceeding by more than two orders of magnitude those reported in a vertical gating geometry. Our example of reversible and low-power lateral control over 11 memory states in the graphene conductivity illustrates the possibility of multimemory and multifunctional applications, as top and bottom inputs remain accessible.
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Submitted 14 November, 2015;
originally announced November 2015.
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Subcoercive and multilevel ferroelastic remnant states with resistive readout
Authors:
B. Kundys,
V. Iurchuk,
C. Meny,
H. Majjad,
B. Doudin
Abstract:
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for applications. We propose here to take advantage of the multiferroic properties of ferroelectrics, using ferroelasticity to create a remnant strain, persisting after stressi…
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Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for applications. We propose here to take advantage of the multiferroic properties of ferroelectrics, using ferroelasticity to create a remnant strain, persisting after stressing the material by converse piezoelectricity means. While large electric fields are needed to switch the polarization, here writing occurs at subcoercive much lower field values, which can efficiently imprint multiple remnant strain states. A proof-of-principle device, with the simplest and non-optimized resistance strain detection design, is shown here to exhibit 13-memory states of high reproducibility and reliability. The related advantages in lower power consumption and limited device fatigue make our approach relevant for applications.
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Submitted 13 June, 2014;
originally announced June 2014.
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Random barrier double-well model for resistive switching in tunnel barriers
Authors:
Eric Bertin,
David Halley,
Yves Henry,
Nabil Najjari,
Hicham Majjad,
Martin Bowen,
Victor DaCosta,
Jacek Arabski,
Bernard Doudin
Abstract:
The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the conductance of the barrier and leads to the resistive switching effects. A double-well model for trapped electrons in MgO is introduced to theoretically describe th…
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The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the conductance of the barrier and leads to the resistive switching effects. A double-well model for trapped electrons in MgO is introduced to theoretically describe this phenomenon. Including the statistical distribution of potential barrier heights for these traps leads to a power-law dependence of the resistance as a function of time, under a constant bias voltage. This model also predicts a power-law relation of the hysteresis as a function of the voltage sweep frequency. Experimental transport results strongly support this model and in particular confirm the expected power laws dependencies of resistance. They moreover indicate that the exponent of these power laws varies with temperature as theoretically predicted.
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Submitted 18 May, 2011; v1 submitted 28 June, 2010;
originally announced June 2010.
