-
Impact of Monoatomic Vacancies in 2D Materials on the Performance of Magnetic Tunnel Junction Devices: Insights from Configurations and Interface Interactions
Authors:
Halimah Harfah,
Yusuf Wicaksono,
Gagus K. Sunnardianto,
Muhammad Aziz Majidi,
Koichi Kusakabe
Abstract:
We investigate the impact of monoatomic vacancies in 2D materials on the performance of magnetic tunnel junction (MTJ) devices using first-principles calculations within Density Functional Theory (DFT). Specifically, we analyze the influence on hexagonal boron nitride (hBN) with various layer configurations, uncovering distinct transmission probability patterns. Transmission calculations were cond…
▽ More
We investigate the impact of monoatomic vacancies in 2D materials on the performance of magnetic tunnel junction (MTJ) devices using first-principles calculations within Density Functional Theory (DFT). Specifically, we analyze the influence on hexagonal boron nitride (hBN) with various layer configurations, uncovering distinct transmission probability patterns. Transmission calculations were conducted using the Landauer-Büttiker formula employing the Non-Equilibrium Green's Function (NEGF) method. In the Ni/hBN(V$_B$)-hBN/Ni system, a significant reduction in transmission probability was observed compared to non-vacancy configurations. However, when two hBN vacancies were considered, creating the Ni/hBN(V$_B$)-hBN(V$_B$)/Ni MTJ system, a new transmission channel mediated by vacancy localized states emerged. The introduction of a monoatomic boron vacancy in the middle hBN layer of the Ni/3hBN/Ni system revealed nuanced effects on the transmission probability, highlighting alterations in the spin minority and majority channels. Additionally, we explore the monoatomic vacancy in the graphene layer in the Ni/hBN-Gr-hBN/Ni MTJ, uncovering a unique transmission channel influenced by the proximity effect. Our findings suggest that the creation of monoatomic vacancies on the insulator barrier of 2D materials induces distinctive characteristics shaped by the interaction between the surface state of the electrode and the localized state of the monoatomic vacancy layer in the MTJ system.
△ Less
Submitted 3 April, 2024;
originally announced April 2024.
-
Ti substitution on Fe sites significantly changes the electronic properties of orthorhombic LaFeO3 perovskites (A first-principles study)
Authors:
Jesaya Situmeang,
Djoko Triyono,
Muhammad Aziz Majidi
Abstract:
A large number of published experimental works suggest that when the Fe ions in orthorhombic LaFeO3 are substituted, band gap reduction is expected. However, recent experimental works observe band gap enhancement with increasing Ti ions replacing Fe ions. While satisfactory explanation on such observations seem absent, a first principles investigation may answer what should really happen. We inves…
▽ More
A large number of published experimental works suggest that when the Fe ions in orthorhombic LaFeO3 are substituted, band gap reduction is expected. However, recent experimental works observe band gap enhancement with increasing Ti ions replacing Fe ions. While satisfactory explanation on such observations seem absent, a first principles investigation may answer what should really happen. We investigate from first-principles the influence of Ti substitution on LaFeO3 at Fe-site as a function of substitution concentration. Amongst the five investigated models, we found that as the Ti substitution concentration increases, the electronic band gap at Fermi level decreases. However, in the model where two Ti ions replace Fe sites in an anti-symmetric arrangement, the Fermi level is crossed. We found that band gap reductions could be caused by the decreased in field splitting between the Fe 3d orbitals and charge competition between Fe-O and Ti-O bonds as inferred from density of states analysis. While band gap reduction with increasing substitution implies better conductivity, cohesive energy becomes less negative although the perovskite distortion parameter does not differ significantly between each models.
△ Less
Submitted 21 January, 2024;
originally announced January 2024.
-
High Magnetoresistance Ratio on hBN Boron-Vacancy/Graphene Magnetic Tunnel Junction
Authors:
Halimah Harfah,
Yusuf Wicaksono,
Gagus Ketut Sunnardianto,
Muhammad Aziz Majidi,
Koichi Kusakabe
Abstract:
We presents a new strategy to create a van der Waals-based magnetic tunnel junction (MTJ) that consists of a three-atom layer thickness of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) by introducing a monoatomic Boron vacancy in both hBN layers. The magnetic properties and electronic structure of the system were investigated using density functional theory (DFT), while the transmiss…
▽ More
We presents a new strategy to create a van der Waals-based magnetic tunnel junction (MTJ) that consists of a three-atom layer thickness of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) by introducing a monoatomic Boron vacancy in both hBN layers. The magnetic properties and electronic structure of the system were investigated using density functional theory (DFT), while the transmission probability of the MTJ was investigated using the Landauer-Büttiker formalism within the non-equilibrium Green function method. The Stoner gap was found to be created between the spin-majority channel and the spin-minority channel on LDOS of the hBN monoatomic boron-vacancy (V$_B$) near the vicinity of Fermi energy, creating a possible control of the spin valve by considering two different magnetic allignment of hBN(V$_B$) layers, anti-parallel and parallel configuration. The results of the transmission probability calculation showed a high electron transmission in the parallel configuration of the hBN(V$_B$) layers and a low transmission when the antiparallel configuration was considered. A high TMR ratio of approximately 400% was observed when comparing the antiparallel and parallel configuration of hBN(V$_B$) layers in the hBN (V$_B$)/Gr/hBN(V$_B$), giving the highest TMR for the thinnest MTJ system.
△ Less
Submitted 22 December, 2023;
originally announced December 2023.
-
Electrically controllable exchange bias via interface magnetoelectric effect
Authors:
Adam B. Cahaya,
Ansell Alvarez Anderson,
Anugrah Azhar,
Muhammad Aziz Majidi
Abstract:
Exchange bias is a unidirectional magnetic anisotropy that often arise from interfacial interaction of a ferromagnetic and antiferromagnetic layers. In this article, we show that a metallic layer with spin-orbit coupling can induces an exchange bias via an interface magnetoelectric effect. In linear response regime, the interface magnetoelectric effect is induced by spin-orbit couplings that arise…
▽ More
Exchange bias is a unidirectional magnetic anisotropy that often arise from interfacial interaction of a ferromagnetic and antiferromagnetic layers. In this article, we show that a metallic layer with spin-orbit coupling can induces an exchange bias via an interface magnetoelectric effect. In linear response regime, the interface magnetoelectric effect is induced by spin-orbit couplings that arises from the broken symmetry of the system. Furthermore, we demonstrate that the exchange bias can be controlled by electric field.
△ Less
Submitted 5 June, 2023; v1 submitted 21 May, 2023;
originally announced May 2023.
-
High-performance Kerr quantum battery
Authors:
Muhammad Shoufie Ukhtary,
Ahmad R. T. Nugraha,
Adam B. Cahaya,
Andrivo Rusydi,
Muhammad Aziz Majidi
Abstract:
We propose and investigate the performance of a hybrid quantum battery, the so-called Kerr quantum battery, which consists of two interacting quantum oscillators, i.e., the charger is a harmonic oscillator and the battery is an anharmonic oscillator involving the Kerr nonlinearity. Such a setup creates nonuniform spacing between energy levels of the quantum oscillator that increases with the energ…
▽ More
We propose and investigate the performance of a hybrid quantum battery, the so-called Kerr quantum battery, which consists of two interacting quantum oscillators, i.e., the charger is a harmonic oscillator and the battery is an anharmonic oscillator involving the Kerr nonlinearity. Such a setup creates nonuniform spacing between energy levels of the quantum oscillator that increases with the energy level. We find that the Kerr quantum battery can store more energy than the qubit battery and reaches maximum stored energy faster than the harmonic oscillator battery. In particular, the average charging power of the Kerr quantum battery is larger than the qubit battery. Furthermore, most of the stored energy in the Kerr quantum battery can be extracted for work. All of the properties of the Kerr quantum battery are controlled by the strength of nonlinearity, in which the enhancement of the nonlinearity transforms the battery from a harmonic oscillator to a qubit.
△ Less
Submitted 23 June, 2023; v1 submitted 4 May, 2023;
originally announced May 2023.
-
Computational study of III-V direct-gap semiconductors for thermoradiative cell applications
Authors:
Muhammad Y. Hanna,
Muhammad Aziz Majidi,
Ahmad R. T. Nugraha
Abstract:
We investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the III-V group. The TR cells generate electricity from thermal radiation, and their efficiency is influenced by several factors such as the bandgap, temperature diffe…
▽ More
We investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the III-V group. The TR cells generate electricity from thermal radiation, and their efficiency is influenced by several factors such as the bandgap, temperature difference, and absorption spectrum. To create a realistic model, we incorporate sub-bandgap and heat losses in our calculations and utilize density-functional theory to determine the energy gap and optical properties of each material. Our findings suggest that the effect of absorptivity on the material, especially when the sub-bandgap and heat losses are considered, can decrease the efficiency of TR cells. However, careful treatment of the absorptivity indicates that not all materials have the same trend of decrease in the TR cell efficiency when taking the loss mechanisms into account. We observe that GaSb exhibits the highest power density, while InP demonstrates the lowest one. Moreover, GaAs and InP exhibit relatively high efficiency without the sub-bandgap and heat losses, whereas InAs display lower efficiency without considering the losses, yet exhibit higher resistance to sub-bandgap and heat losses compared to the other materials, thus effectively becoming the best TR cell material in the III-V group of semiconductors.
△ Less
Submitted 28 April, 2023;
originally announced April 2023.
-
Enhancement of spin mixing conductance by $s$-$d$ orbital hybridization in heavy metals
Authors:
Adam B. Cahaya,
Rico M. Sitorus,
Anugrah Azhar,
Ahmad R. T. Nugraha,
Muhammad Aziz Majidi
Abstract:
In a magnetic multilayer, the spin transfer between localized magnetization dynamics and itinerant conduction spin arises from the interaction between a normal metal and an adjacent ferromagnetic layer. The spin-mixing conductance then governs the spin-transfer torques and spin pum** at the magnetic interface. Theoretical description of spin-mixing conductance at the magnetic interface often emp…
▽ More
In a magnetic multilayer, the spin transfer between localized magnetization dynamics and itinerant conduction spin arises from the interaction between a normal metal and an adjacent ferromagnetic layer. The spin-mixing conductance then governs the spin-transfer torques and spin pum** at the magnetic interface. Theoretical description of spin-mixing conductance at the magnetic interface often employs a single conduction-band model. However, there is orbital hybridization between conduction $s$ electron and localized $d$ electron of the heavy transition metal, in which the single conduction-band model is insufficient to describe the $s$-$d$ orbital hybridization. In this work, using the generalized Anderson model, we estimate the spin-mixing conductance that arises from the $s$-$d$ orbital hybridization. We find that the orbital hybridization increases the magnitude of the spin-mixing conductance.
△ Less
Submitted 29 June, 2022; v1 submitted 19 June, 2022;
originally announced June 2022.
-
Effect of interfacial spin mixing conductance on gyromagnetic ratio of Gd substituted Y$_{3}$Fe$_{5}$O$_{12}$
Authors:
Adam B. Cahaya,
Anugrah Azhar,
Dede Djuhana,
Muhammad Aziz Majidi
Abstract:
Due to its low intrinsic dam**, Y$_3$Fe$_5$O$_{12}$ and its substituted variations are often used for ferromagnetic layer at spin pum** experiment. Spin pum** is an interfacial spin current generation in the interface of ferromagnet and non-magnetic metal, governed by spin mixing conductance parameter $G^{\uparrow\downarrow}$. $G^{\uparrow\downarrow}$ has been shown to enhance the dam** of…
▽ More
Due to its low intrinsic dam**, Y$_3$Fe$_5$O$_{12}$ and its substituted variations are often used for ferromagnetic layer at spin pum** experiment. Spin pum** is an interfacial spin current generation in the interface of ferromagnet and non-magnetic metal, governed by spin mixing conductance parameter $G^{\uparrow\downarrow}$. $G^{\uparrow\downarrow}$ has been shown to enhance the dam** of the ferromagnetic layer. The theory suggested that the effect of $G^{\uparrow\downarrow}$ on gyromagnetic ratio only come from its negligible imaginary part. In this article, we show that the different dam** of ferrimagnetic lattices induced by $G^{\uparrow\downarrow}$ can affect the gyromagnetic ratio of Gd-substituted Y$_3$Fe$_5$O$_{12}$.
△ Less
Submitted 1 April, 2022;
originally announced April 2022.
-
Ultimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin
Authors:
Yusuf Wicaksono,
Halimah Harfah,
Gagus Ketut Sunnardianto,
Muhammad Aziz Majidi,
Koichi Kusakabe
Abstract:
$\require{mediawiki-texvc}$ A theoretical study is presented on the in-plane conductance of graphene that is partially sandwiched by Ni(111) slabs with a finite size and atom-scale width of $\approx12.08 Å…
▽ More
$\require{mediawiki-texvc}$ A theoretical study is presented on the in-plane conductance of graphene that is partially sandwiched by Ni(111) slabs with a finite size and atom-scale width of $\approx12.08 Å$. In the sandwiched part, the gapped Dirac cone of graphene can be controlled via pseudospin by changing the magnetic alignment of the Ni(111) slabs. When the magnetic moments of the upper and lower Ni(111) slabs have antiparallel and parallel configurations, the bandgap at the Dirac cone is open and closed, respectively. The transmission probability calculation for the in-plane conductance of the system indicated that the antiparallel configuration would result in nearly zero conductance of $E-E_F=0.2$ eV. In the parallel configuration, the transmission probability calculation indicated that the system would have a profile similar to that of pristine graphene. A comparison of the transmission probabilities of the antiparallel and parallel configurations indicated that a high magnetoresistance of $1450\%$ could be achieved. An ultimate magnetoresistance can be expected if the Ni(111) slab widths are increased to the nanometer scale.
△ Less
Submitted 6 June, 2021;
originally announced June 2021.
-
High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission
Authors:
Halimah Harfah,
Yusuf Wicaksono,
Gagus Ketut Sunnardianto,
Muhammad Aziz Majidi,
Koichi Kusakabea
Abstract:
This work presents an ab-initio study of a few-layers hexagonal boron nitride (hBN) and hBN-graphene heterostructure sandwiched between Ni(111) layers. The aim of this study is to understand the electron transmission process through the interface. Spin-polarized density functional theory calculations and transmission probability calculations were conducted on Ni(111)/$n$hBN/Ni(111) with $n$ = 2, 3…
▽ More
This work presents an ab-initio study of a few-layers hexagonal boron nitride (hBN) and hBN-graphene heterostructure sandwiched between Ni(111) layers. The aim of this study is to understand the electron transmission process through the interface. Spin-polarized density functional theory calculations and transmission probability calculations were conducted on Ni(111)/$n$hBN/Ni(111) with $n$ = 2, 3, 4, and 5 as well as on Ni(111)/hBN-Gr-hBN/Ni(111). Slabs with magnetic alignment in an anti-parallel configuration (APC) and parallel configuration (PC) were considered. The pd-hybridizations at both the upper and lower interfaces between the Ni slabs and hBN were found to stabilize the system. The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit a high tunneling magnetoresistance (TMR) ratio at ~0.28 eV for $n$ = 2 and 0.34 eV for $n$ > 2, which are slightly higher than the Fermi energy. The observed shifting of this high TMR ratio originates from the transmission of electrons through the surface states of the $d_{z^2}$-orbital of Ni atoms at interfaces which are hybridized with the $p_z$-orbital of N atoms. In the case of $n$ > 2, the proximity effect causes an evanescent wave, contributing to decreasing transmission probability but increasing the TMR ratio. However, TMR ratio, as well as transmission probability, was found to be increased, by replacing the unhybridized hBN layer of the Ni/3hBN/Ni MTJ with graphene, thus becoming Ni/hBN-Gr-hBN/Ni. A TMR ratio as high as ~1200% was observed at an energy of 0.34 eV, which is higher than the Fermi energy. Furthermore, a design is proposed for a device based on a new reading mechanism using the high TMR observed just above the Fermi energy level.
△ Less
Submitted 18 April, 2021;
originally announced April 2021.
-
Effects of screened Coulomb interaction on spin transfer torque
Authors:
Adam B. Cahaya,
Muhammad Aziz Majidi
Abstract:
In a magnetic multilayer, magnetizations can be manipulated by spin transfer torque. Both spin transfer torque and its reciprocal effect, spin pum**, are governed by spin mixing conductance. The magnitude of spin mixing conductance at the interface of nearly magnetic metal has been theoretically shown to be enhanced by electron-electron interaction. However, experiments show both increasing and…
▽ More
In a magnetic multilayer, magnetizations can be manipulated by spin transfer torque. Both spin transfer torque and its reciprocal effect, spin pum**, are governed by spin mixing conductance. The magnitude of spin mixing conductance at the interface of nearly magnetic metal has been theoretically shown to be enhanced by electron-electron interaction. However, experiments show both increasing and decreasing values of spin mixing conductance for metals with larger electron-electron interaction. Here we take into account the effect of electron-electron interaction on the screening of the Coulomb interaction at the magnetic interface to correctly describe the experiment.
△ Less
Submitted 15 March, 2021; v1 submitted 4 March, 2021;
originally announced March 2021.
-
Yukawa potential for realistic prediction of Hubbard and Hund interaction parameters for transition metals
Authors:
Adam B. Cahaya,
Anugrah Azhar,
Muhammad Aziz Majidi
Abstract:
The generalized Hubbard model is an important theoretical model for modeling strongly correlated materials. To be able to theoretically predict the properties of the materials, the model requires Hubbard's $U$ and Hund's $J$ parameter that represent the on-site Coulomb and exchange interaction, respectively. For bare Coulomb interactions, the analytic expression of $U$ and $J$ are analytically des…
▽ More
The generalized Hubbard model is an important theoretical model for modeling strongly correlated materials. To be able to theoretically predict the properties of the materials, the model requires Hubbard's $U$ and Hund's $J$ parameter that represent the on-site Coulomb and exchange interaction, respectively. For bare Coulomb interactions, the analytic expression of $U$ and $J$ are analytically described by Racah's $A,B,C$ parameters. However, the values of $U$ are too large for transition-metal-based materials. To obtain more accurate values for realistic materials, we employ a Yukawa-type screened Coulomb interaction, characterized by screening constant $λ$. We characterize $λ$ for transition metals. The modified $A,B,C$ parameters give a more realistic $U$ and $J$ values.
△ Less
Submitted 2 April, 2021; v1 submitted 28 February, 2021;
originally announced March 2021.
-
Spin-Current Control by Induced Electric-Polarization Reversal in Ni/hBN/Ni: A Cross-Correlation Material
Authors:
Halimah Harfah,
Yusuf Wicaksono,
Muhammad Aziz Majidi,
Koichi Kusakabe
Abstract:
We undertook an ab-initio study of hexagonal boron nitride (hBN) sandwiched between Ni(111) layers to examine the interface of this material structure. We considered Ni(111)/hBN/Ni(111) with a slab with three Ni atomic layers to determine the exact atom arrangement at the interface. The density functional theory calculations for 36 stacking arrangements, which are doubled with respect to the magne…
▽ More
We undertook an ab-initio study of hexagonal boron nitride (hBN) sandwiched between Ni(111) layers to examine the interface of this material structure. We considered Ni(111)/hBN/Ni(111) with a slab with three Ni atomic layers to determine the exact atom arrangement at the interface. The density functional theory calculations for 36 stacking arrangements, which are doubled with respect to the magnetic alignment of slabs in an anti-parallel configuration (APC) and parallel configuration (PC), revealed that the number of formed weak chemical bonds, in the pd-hybridization between the N and Ni atoms, is decisive. A maximum of two pd-hybridization bonds stabilized the structure, with APC proving to be the most favorable magnetic alignment, in line with the results of previous experimental studies. In the lowest energy state, an induced magnetic moment at an N site appears when N is moved closer to one of the Ni atoms. Interestingly, the moment direction is switched by the position of the N layer in the resulting bi-stable state with electrical polarization when APC is chosen. The transmission probability calculation of Ni/hBN/Ni having the determined interface structure at the center of the junction exhibits a spin-filtering effect where the spin-polarized current is controlled by the electric field when a field-induced reversal of the polarization is realized.
△ Less
Submitted 29 May, 2019;
originally announced May 2019.
-
Temperature-dependent and anisotropic optical response of layered Pr$_{0.5}$Ca$_{1.5}$MnO$_{4}$ probed by spectroscopic ellipsometry
Authors:
M. A. Majidi,
E. Thoeng,
P. K. Gogoi,
F. Wendt,
S. H. Wang,
I. Santoso,
T. C. Asmara,
I. P. Handayani,
P. H. M. van Loosdrecht,
A. A. Nugroho,
M. Rübhausen,
A. Rusydi
Abstract:
We study the temperature dependence as well as anisotropy of optical conductivity ($σ_1$) in the pseudocubic single crystal Pr$_{0.5}$Ca$_{1.5}$MnO$_{4}$ using spectrocopic ellipsometry. Three transition temperatures are observed and can be linked to charge-orbital ($T_{\rm CO/OO}$ $\sim$ 320 K), two-dimensional-antiferromagnetic (2D-AFM) ($\sim$ 200 K), and three-dimensional AFM (…
▽ More
We study the temperature dependence as well as anisotropy of optical conductivity ($σ_1$) in the pseudocubic single crystal Pr$_{0.5}$Ca$_{1.5}$MnO$_{4}$ using spectrocopic ellipsometry. Three transition temperatures are observed and can be linked to charge-orbital ($T_{\rm CO/OO}$ $\sim$ 320 K), two-dimensional-antiferromagnetic (2D-AFM) ($\sim$ 200 K), and three-dimensional AFM ($T_{\rm N} \sim$ 125 K) orderings. Below $T_{\rm CO/OO}$, $σ_1$ shows a charge ordering peak ($\sim$0.8 eV) with a significant blue shift as the temperature decreases. Calculations based on a model that incorporates a static Jahn-Teller distortion and assumes the existence of a local charge imbalance between two different sublattices support this assignment and explain the blue shift. This view is further supported by the partial spectral weight analysis showing the onset of optical anisotropy at $T_{\rm CO/OO}$ in the charge-ordering region ($0.5-2.5$ eV). Interestingly, in the charge-transfer region ($2.5-4$ eV), the spectral weight shows anomalies around the $T_{\rm 2D-AFM}$ that we attribute to the role of oxygen-$p$ orbitals in stabilizing the CE-type magnetic ordering. Our result shows the importance of spin, charge, and lattice degrees of freedom in this layered manganite.
△ Less
Submitted 13 January, 2015;
originally announced January 2015.
-
Theoretical study of optical conductivity of graphene with magnetic and nonmagnetic adatoms
Authors:
Muhammad Aziz Majidi,
Syahril Siregar,
Andrivo Rusydi
Abstract:
We present a theoretical study of the optical conductivity of graphene with magnetic and nonmagnetic adatoms. First, by introducing alternating potential in a pure graphene, we demonstrate a gap formation in the density of states and the corresponding optical conductivity. We highlight the distinction between such a gap formation and the so-called Pauli blocking effect. Next, we apply this idea to…
▽ More
We present a theoretical study of the optical conductivity of graphene with magnetic and nonmagnetic adatoms. First, by introducing alternating potential in a pure graphene, we demonstrate a gap formation in the density of states and the corresponding optical conductivity. We highlight the distinction between such a gap formation and the so-called Pauli blocking effect. Next, we apply this idea to graphene with adatoms by introducing magnetic interactions between the carrier spins and the spins of the adatoms. Exploring various possible ground-state spin configurations of the adatoms, we find that antiferromagnetic configuration yields the lowest total electronic energy, and is the only configuration that forms a gap. Furthermore, we analyze four different circumstances leading to similar gaplike structures and propose a means to interpret the magneticity and the possible orderings of the adatoms on graphene solely from the optical conductivity data. We apply this analysis to the recently reported experimental data of oxygenated graphene.
△ Less
Submitted 11 January, 2015;
originally announced January 2015.
-
Direct observation of room temperature high-energy resonant excitonic effects in graphene
Authors:
I. Santoso,
P. K Gogoi,
H. B. Su,
H. Huang,
Y. Lu,
D. Qi,
W. Chen,
M. A. Majidi,
Y. P. Feng,
A. T. S. Wee,
K. P. Loh,
T. Venkatesan,
R. P. Saichu,
A. Goos,
A. Kotlov,
M. Ruebhausen,
A. Rusydi
Abstract:
Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room temperature and for a very large number of graphene layers $N$$\approx$75, thus suggesting a poor screening in graphene. The optical conductivity ($σ_1$) of reso…
▽ More
Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room temperature and for a very large number of graphene layers $N$$\approx$75, thus suggesting a poor screening in graphene. The optical conductivity ($σ_1$) of resonant exciton scales linearly with number of graphene layer (up to \emph{at least} 8 layers) implying quantum character of electrons in graphene. Furthermore, a prominent excitation at 5.4eV, which is a mixture of interband transitions from $π$ to $π^{*}$ at the M point and a $π$ plasmonic excitation, is observed. In contrast, for graphite the resonant exciton is not observable but strong interband transitions are seen instead. Supported by theoretical calculations, for $N \leq$ 28 the $σ_1$ is dominated by the resonant exciton, while for $N >$ 28 it is a mixture between exitonic and interband transitions. The latter is characteristic for graphite, indicating a crossover in the electronic structure. Our study shows that important elementary excitations in graphene occur at high binding energies and elucidate the differences in the way electrons interact in graphene and graphite.
△ Less
Submitted 16 January, 2011;
originally announced January 2011.
-
Theory of high energy optical conductivity and the role of oxygens in manganites
Authors:
Muhammad Aziz Majidi,
Haibin Su,
Yuan ** Feng,
Michael Ruebhausen,
Andrivo Rusydi
Abstract:
Recent experimental study reveals the optical conductivity of La$_{1-x}$Ca$_x$MnO$_3$ over a wide range of energy and the occurrence of spectral weight transfer as the system transforms from paramagnetic insulating to ferromagnetic metallic phase [Rusydi {\it et al.}, Phys. Rev. B {\bf 78}, 125110 (2008)]. We propose a model and calculation within the Dynamical Mean Field Theory to explain this ph…
▽ More
Recent experimental study reveals the optical conductivity of La$_{1-x}$Ca$_x$MnO$_3$ over a wide range of energy and the occurrence of spectral weight transfer as the system transforms from paramagnetic insulating to ferromagnetic metallic phase [Rusydi {\it et al.}, Phys. Rev. B {\bf 78}, 125110 (2008)]. We propose a model and calculation within the Dynamical Mean Field Theory to explain this phenomenon. We find the role of oxygens in mediating the hop** of electrons between manganeses as the key that determines the structures of the optical conductivity. In addition, by parametrizing the hop** integrals through magnetization, our result suggests a possible scenario that explains the occurrence of spectral weight transfer, in which the ferromagnatic ordering increases the rate of electron transfer from O$_{2p}$ orbitals to upper Mn$_{e_g}$ orbitals while simultaneously decreasing the rate of electron transfer from O$_{2p}$ orbitals to lower Mn$_{e_g}$orbitals, as temperature is varied across the ferromagnetic transition. With this scenario, our optical conductivity calculation shows very good quantitative agreement with the experimental data.
△ Less
Submitted 16 January, 2011;
originally announced January 2011.
-
The effect of spin-orbit interaction and attractive Coulomb potential on the magnetic properties of Ga$_{1-x}$Mn$_{x}$As
Authors:
A. -M. Nili,
M. A. Majidi,
P. Reis,
J. Moreno,
M. Jarrell
Abstract:
We employ the dynamical mean-field approximation to study the magnetic properties of a model relevant for the dilute magnetic semiconductors. Our model includes the spin-orbit coupling on the hole bands, the exchange interaction, and the attractive Coulomb potential between the negatively charged magnetic ions and the itinerant holes. The inclusion of the Coulomb potential significantly renormaliz…
▽ More
We employ the dynamical mean-field approximation to study the magnetic properties of a model relevant for the dilute magnetic semiconductors. Our model includes the spin-orbit coupling on the hole bands, the exchange interaction, and the attractive Coulomb potential between the negatively charged magnetic ions and the itinerant holes. The inclusion of the Coulomb potential significantly renormalizes the exchange coupling and enhances the ferromagnetic transition temperature for a wide range of couplings. We also explore the effect of the spin-orbit interaction by using two different values of the ratio of the effective masses of the heavy and light holes. We show that in the regime of small $J_{c}$-$V$ the spin-orbit interaction enhances $T_{c}$, while for large enough values of $J_{c}$-$V$ magnetic frustration reduces $T_c$ to values comparable to the previously calculated strong coupling limit.
△ Less
Submitted 6 July, 2010; v1 submitted 4 June, 2010;
originally announced June 2010.
-
Charge Density Wave Driven Ferromagnetism in the Periodic Anderson Model
Authors:
M. A. Majidi,
D. G. S. P. Doluweera,
B. Moritz,
P. R. C. Kent,
J. Moreno,
M. Jarrell
Abstract:
We demonstrate the existence of ferromagnetism in the Periodic Anderson Model (PAM) at conduction-band filling near a quarter. We show that this ferromagnetism is not supported by Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions but is instead driven by the precursors of charge density wave (CDW) formation in the conduction electron band. To study the effect of spatial correlations, we compare…
▽ More
We demonstrate the existence of ferromagnetism in the Periodic Anderson Model (PAM) at conduction-band filling near a quarter. We show that this ferromagnetism is not supported by Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions but is instead driven by the precursors of charge density wave (CDW) formation in the conduction electron band. To study the effect of spatial correlations, we compare Dynamical Mean field Approximation (DMFA) and Dynamical Cluster Approximation (DCA) results. We find that both RKKY and CDW driven ferromagnetism persist as short-range correlations are incorporated into the theory. Both DMFA and DCA show the precursors of CDW formation through the strong enhancement of the d-electron CDW susceptibility as the temperature decreases, up to the ferromagnetic transition temperature. In addition, the DCA captures the signal of a band gap opening due to Peierls instability.
△ Less
Submitted 31 October, 2007;
originally announced October 2007.
-
Dynamics of Impurity and Valence Bands in GaMnAs within the Dynamical Mean Field Approximation
Authors:
M. A. Majidi,
J. Moreno,
M. Jarrell,
R. S. Fishman,
K. Aryanpour
Abstract:
We calculate the density-of-states and the spectral function of GaMnAs within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasi-particle and impurity bands in the paramagnetic and ferromagnetic phases for…
▽ More
We calculate the density-of-states and the spectral function of GaMnAs within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasi-particle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling at the Mn do** of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.
△ Less
Submitted 26 October, 2005;
originally announced October 2005.
