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Gating effects in antiferromagnetic CuMnAs
Authors:
M. J. Grzybowski,
P. Wadley,
K. W. Edmonds,
R. P. Campion,
K. Dybko,
M. Majewicz,
B. L. Gallagher,
M. Sawicki,
T. Dietl
Abstract:
Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the Néel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current-induced spin-orbit torques commensurate with spin directio…
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Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the Néel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current-induced spin-orbit torques commensurate with spin directions and topological Dirac quasiparticles. Here, we report on the observation of a reversible effect of an electric field on the resistivity of CuMnAs thin films, employing ionic liquid as a gate insulator. The data allow to determine the carrier type, concentration, and mobility independently of the Hall effect that may be affected by an anomalous component.
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Submitted 9 August, 2019;
originally announced August 2019.
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Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
Authors:
Karolina Kalbarczyk,
Krzysztof Dybko,
Katarzyna Gas,
Dariusz Sztenkiel,
Marek Foltyn,
Magdalena Majewicz,
Piotr Nowicki,
Elżbieta Łusakowska,
Detlef Hommel,
Maciej Sawicki
Abstract:
Schottky barrier height and the ideality factor $η$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10M$Ω$ resistances already at room temperature are indicative that a nearly conductive-dislocation-free elec…
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Schottky barrier height and the ideality factor $η$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10M$Ω$ resistances already at room temperature are indicative that a nearly conductive-dislocation-free electrical properties are achieved. The analysis of temperature dependence of the forward bias I-V characteristics in the frame of the thermionic emission model yields Ti-(Ga,Mn)N Schottky barrier height to be slightly lower but close in character to other metal/GaN junctions. However, the large magnitudes of the ideality factor $η$>1.5 for T$\leqslant$300K, point to a sizable current blocking in the structure. While it remains to be seen whether it is due to the presence of (Ga,Mn)N barrier or due to other factors which reduce the effective area of the junction, an existence of a substantial serial resistance may hold the key to explain similar observations in other devices of a corresponding structure and technological relevance.
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Submitted 23 July, 2019;
originally announced July 2019.
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Perspectives of HgTe Topological Insulators for Quantum Hall Metrology
Authors:
Ivan Yahniuk,
Sergey S. Krishtopenko,
Grzegorz Grabecki,
Benoit Jouault,
Christophe Consejo,
Wilfried Desrat,
Magdalena Majewicz,
Alexander M. Kadykov,
Kirill E. Spirin,
Vladimir I. Gavrilenko,
Nikolay N. Mikhailov,
Sergey A. Dvoretsky,
Dmytro B. But,
Frederic Teppe,
Jerzy Wróbel,
Grzegorz Cywiński,
1 Sławomir Kret,
Tomasz Dietl,
Wojciech Knap
Abstract:
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states to…
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We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B $\leq$ 1.4T) and simultaneously realtively high teperatures (liquid helium, T $\geq$ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices.
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Submitted 17 October, 2018;
originally announced October 2018.
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Conductance resonances and crossing of the edge channels in the quantum Hall ferromagnet state of Cd(Mn)Te microstructures
Authors:
E. Bobko,
D. Płoch,
D. Śnieżek,
M. Majewicz,
M. Fołtyn,
T. Wojciechowski,
S. Chusnutdinow,
T. Wojtowicz,
J. Wróbel
Abstract:
In this paper we report on the observation of very high and narrow magnetoconductance peaks which we attribute to the transition to quantum Hall ferromagnet (QHFM) state occurring at the edges of the sample. We show that the expected spatial degeneracy of chiral edge channels is spontaneously lifted in agreement with theoretical studies performed within the Hartree-Fock approximation. We indicate…
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In this paper we report on the observation of very high and narrow magnetoconductance peaks which we attribute to the transition to quantum Hall ferromagnet (QHFM) state occurring at the edges of the sample. We show that the expected spatial degeneracy of chiral edge channels is spontaneously lifted in agreement with theoretical studies performed within the Hartree-Fock approximation. We indicate also that separated edge currents which flow in parallel, may nevertheless cross at certain points, giving rise to the formation of topological defects or one-dimensional magnetic domains. Furthermore, we find that such local crossing of chiral channels can be induced on demand by coupling spin states of a Landau level to different current terminals and applying a DC source-drain voltage.
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Submitted 11 April, 2019; v1 submitted 10 April, 2018;
originally announced April 2018.
