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Wafer-Scale Integration of Freestanding Photonic Devices with Color Centers in Silicon Carbide
Authors:
Sridhar Majety,
Victoria A. Norman,
Pranta Saha,
Alex H. Rubin,
Scott Dhuey,
Marina Radulaski
Abstract:
Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate photonic devices at scale while maintaining the properties of quantum emitters. We address this challenge in silicon carbide which has both commercially availa…
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Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate photonic devices at scale while maintaining the properties of quantum emitters. We address this challenge in silicon carbide which has both commercially available wafer-scale substrates and is a host to color centers with desirable optical and spin properties. Using ion beam etching at an angle, we develop a 5-inch wafer process for the fabrication of triangular cross-section photonic devices in bulk 4H-SiC. The developed process has a variability in etch rate and etch angle of 5.4% and 2.9%, respectively. Furthermore, the integrated color centers maintain their optical properties after the etch, thus achieving the nanofabrication goal of wafer-scale nanofabrication in quantum-grade silicon carbide.
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Submitted 13 May, 2024;
originally announced May 2024.
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ICECAP: a 3-in-1 integrated cryogenic system for emission, collection and photon-detection from near infrared quantum nanophotonic devices
Authors:
Victoria A. Norman,
Sridhar Majety,
Alex H. Rubin,
Pranta Saha,
Jeanette Simo,
Bradi Palomarez,
Liang Li,
Pietra B. Curro,
Scott Dhuey,
Selven Virasawmy,
Marina Radulaski
Abstract:
Deployment of quantum telecommunication technologies requires single-photon light emission, collection and detection capability at each network node in cryogenic environments. We combine recent technological advancements in single-photon detectors and cryogenics to demonstrate a 3-in-1 system that incorporates superconducting nanowire single-photon detectors into an optical cryostat operating at t…
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Deployment of quantum telecommunication technologies requires single-photon light emission, collection and detection capability at each network node in cryogenic environments. We combine recent technological advancements in single-photon detectors and cryogenics to demonstrate a 3-in-1 system that incorporates superconducting nanowire single-photon detectors into an optical cryostat operating at temperatures below 2 K. Dubbed the ICECAP system, this cryostation cools samples, collects emission, and detects single photons in one efficient environment suitable for a variety of near infrared quantum emitters. We utilize this system to characterize emission from silicon carbide color centers in photoluminescence and time-resolved measurements. Moreover, we demonstrate the first optical characterization of nitrogen-vacancy centers integrated in 4H-SiC nanopillars.
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Submitted 19 January, 2024;
originally announced January 2024.
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Triangular Cross-Section Beam Splitters in Silicon Carbide for Quantum Information Processing
Authors:
Sridhar Majety,
Pranta Saha,
Zbynka Kekula,
Scott Dhuey,
Marina Radulaski
Abstract:
Triangular cross-section color center photonics in silicon carbide is a leading candidate for scalable implementation of quantum hardware. Within this geometry, we model low-loss beam splitters for applications in key quantum optical operations such as entanglement and single-photon interferometry. We consider triangular cross-section single-mode waveguides for the design of a directional coupler.…
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Triangular cross-section color center photonics in silicon carbide is a leading candidate for scalable implementation of quantum hardware. Within this geometry, we model low-loss beam splitters for applications in key quantum optical operations such as entanglement and single-photon interferometry. We consider triangular cross-section single-mode waveguides for the design of a directional coupler. We optimize parameters for a 50:50 beam splitter. Finally, we test the experimental feasibility of the designs by fabricating triangular waveguides in an ion beam etching process and identify suitable designs for short-term implementation.
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Submitted 13 April, 2024; v1 submitted 13 November, 2023;
originally announced November 2023.
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Triangular Quantum Photonic Devices with Integrated Detectors in Silicon Carbide
Authors:
Sridhar Majety,
Stefan Strohauer,
Pranta Saha,
Fabian Wietschorke,
Jonathan J. Finley,
Kai Müller,
Marina Radulaski
Abstract:
Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission in a triangular cross-section SiC waveguide by introducing a photonic crystal mirror on its one side and a superconducting nanowire single photon detector (SNSP…
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Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission in a triangular cross-section SiC waveguide by introducing a photonic crystal mirror on its one side and a superconducting nanowire single photon detector (SNSPD) on the other. Our modeled triangular cross-section devices with a randomly positioned emitter have a maximum coupling efficiency of 89 % into the desired optical mode and a high coupling efficiency (> 75 %) in more than half of the configurations. For the first time, NbTiN thin films were sputtered on 4H-SiC and the electrical and optical properties of the thin films were measured. We found that the transport properties are similar to the case of NbTiN on SiO2 substrates, while the extinction coefficient is up to 50 % higher for 1680 nm wavelength. Finally, we performed Finite-Difference Time-Domain simulations of triangular cross-section waveguide integrated with an SNSPD to identify optimal nanowire geometries for efficient detection of light from TE and TM polarized modes.
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Submitted 23 December, 2022; v1 submitted 10 August, 2022;
originally announced August 2022.
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Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware
Authors:
Pranta Saha,
Sridhar Majety,
Marina Radulaski
Abstract:
Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on an…
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Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photonic band gap in structures with a triangular cross-section, which can be used as a guiding principle in develo** efficient quantum nanophotonic hardware in silicon carbide. Furthermore, we propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror, which can be utilized for efficient collection and propagating mode selection of light emission.
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Submitted 4 January, 2023; v1 submitted 5 August, 2022;
originally announced August 2022.
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Quantum Information Processing With Integrated Silicon Carbide Photonics
Authors:
Sridhar Majety,
Pranta Saha,
Victoria A. Norman,
Marina Radulaski
Abstract:
Color centers in wide band gap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, spin-photon and spin-spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information pr…
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Color centers in wide band gap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, spin-photon and spin-spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing, in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies have amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.
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Submitted 12 March, 2022; v1 submitted 29 October, 2021;
originally announced November 2021.
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Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
Authors:
Charles Babin,
Rainer Stöhr,
Naoya Morioka,
Tobias Linkewitz,
Timo Steidl,
Raphael Wörnle,
Di Liu,
Erik Hesselmeier,
Vadim Vorobyov,
Andrej Denisenko,
Mario Hentschel,
Christian Gobert,
Patrick Berwian,
Georgy V. Astakhov,
Wolfgang Knolle,
Sridhar Majety,
Pranta Saha,
Marina Radulaski,
Nguyen Tien Son,
Jawad Ul-Hassan,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In par…
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Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.
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Submitted 29 September, 2021; v1 submitted 10 September, 2021;
originally announced September 2021.
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Towards an Open Global Air Quality Monitoring Platform to Assess Children's Exposure to Air Pollutants in the Light of COVID-19 Lockdowns
Authors:
Christina Last,
Prithviraj Pramanik,
Nikita Saini,
Akash Smaran Majety,
Do-Hyung Kim,
Manuel García-Herranz,
Subhabrata Majumdar
Abstract:
This ongoing work attempts to understand and address the requirements of UNICEF, a leading organization working in children's welfare, where they aim to tackle the problem of air quality for children at a global level. We are motivated by the lack of a proper model to account for heavily fluctuating air quality levels across the world in the wake of the COVID-19 pandemic, leading to uncertainty am…
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This ongoing work attempts to understand and address the requirements of UNICEF, a leading organization working in children's welfare, where they aim to tackle the problem of air quality for children at a global level. We are motivated by the lack of a proper model to account for heavily fluctuating air quality levels across the world in the wake of the COVID-19 pandemic, leading to uncertainty among public health professionals on the exact levels of children's exposure to air pollutants. We create an initial model as per the agency's requirement to generate insights through a combination of virtual meetups and online presentations. Our research team comprised of UNICEF's researchers and a group of volunteer data scientists. The presentations were delivered to a number of scientists and domain experts from UNICEF and community champions working with open data. We highlight their feedback and possible avenues to develop this research further.
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Submitted 17 March, 2021;
originally announced March 2021.
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Quantum photonics in triangular-cross-section nanodevices in silicon carbide
Authors:
Sridhar Majety,
Victoria A. Norman,
Liang Li,
Miranda Bell,
Pranta Saha,
Marina Radulaski
Abstract:
Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color centers are best defined. We model triangular cross-section waveguides and photonic crystal cavities using Finite-Difference Time-Domain and Finite-Difference Eigens…
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Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color centers are best defined. We model triangular cross-section waveguides and photonic crystal cavities using Finite-Difference Time-Domain and Finite-Difference Eigensolver approaches. We analyze optimal color center positioning within the modes of these devices and provide estimates on achievable Purcell enhancement in nanocavities with applications in quantum communications. Using open quantum system modeling, we explore emitter-cavity interactions of multiple non-identical color centers coupled to both a single cavity and a photonic crystal molecule in SiC. We observe polariton and subradiant state formation in the cavity-protected regime of cavity quantum electrodynamics applicable in quantum simulation.
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Submitted 19 January, 2022; v1 submitted 3 December, 2020;
originally announced December 2020.
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Novel color center platforms enabling fundamental scientific discovery
Authors:
Victoria Norman,
Sridhar Majety,
Zhipan Wang,
William H. Casey,
Nicholas Curro,
Marina Radulaski
Abstract:
Color centers are versatile systems that generate quantum light, sense magnetic fields and produce spin-photon entanglement. We review how these properties have pushed the limits of fundamental knowledge in a variety of scientific disciplines, from rejecting local-realistic theories to sensing superconducting phase transitions. In the light of recent progress in material processing and device fabr…
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Color centers are versatile systems that generate quantum light, sense magnetic fields and produce spin-photon entanglement. We review how these properties have pushed the limits of fundamental knowledge in a variety of scientific disciplines, from rejecting local-realistic theories to sensing superconducting phase transitions. In the light of recent progress in material processing and device fabrication, we identify new opportunities for interdisciplinary fundamental discoveries in physics and geochemistry.
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Submitted 29 April, 2020; v1 submitted 24 March, 2020;
originally announced March 2020.
