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Ultrafast Broadband Strong-Field Tunnelling in Asymmetric Nanogaps for Time-Resolved Nanoscopy
Authors:
Haoqing Ning,
Marios Maimaris,
Jiewen Wei,
Emilie Gérouville,
Evangelos Moutoulas,
Zhu Meng,
Clement Ferchaud,
Dmitry Maslennikov,
Navendu Mondal,
Tong Wang,
Colin Chow,
Aleksandar P. Ivanov,
Joshua B. Edel,
Saif A. Haque,
Misha Ivanov,
Jon P. Marangos,
Dimitra G. Georgiadou,
Artem A. Bakulin
Abstract:
Femtosecond-fast and nanometre-size pulses of electrons are emerging as unique probes for ultrafast dynamics at the nanoscale. Presently, such pulses are achievable only in highly sophisticated ultrafast electron microscopes or equally complex setups involving few-cycle-pulsed lasers with stable carrier-envelope phase (CEP) and nanotip probes. Here, we show that the generation of femtosecond pulse…
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Femtosecond-fast and nanometre-size pulses of electrons are emerging as unique probes for ultrafast dynamics at the nanoscale. Presently, such pulses are achievable only in highly sophisticated ultrafast electron microscopes or equally complex setups involving few-cycle-pulsed lasers with stable carrier-envelope phase (CEP) and nanotip probes. Here, we show that the generation of femtosecond pulses of nanoscale tunnelling electrons can be achieved in any ultrafast optical laboratory, using any (deep-UV to mid-IR) femtosecond laser in combination with photosensitive asymmetric nanogap (PAN) diodes fabricated via easy-to-scale adhesion lithography. The dominant mechanism producing tunnelling electrons in PANs is strong-field emission, which is easily achievable without CEP locking or external bias voltage. We employ PANs to demonstrate ultrafast nanoscopy of metal-halide perovskite quantum dots immobilised inside a 10-nm Al/Au nanogap and to characterise laser pulses across the entire optical region (266-6700 nm). Short electron pulses in PANs open the way towards scalable on-chip femtosecond electron measurements and novel design approaches for integrated ultrafast sensing nanodevices.
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Submitted 21 May, 2024;
originally announced May 2024.
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Interplay Between Mixed and Pure Exciton States Controls Singlet Fission in Rubrene Single Crystals
Authors:
Dmitry R. Maslennikov,
Marios Maimaris,
Haoqing Ning,
Xijia Zheng,
Navendu Mondal,
Vladimir V. Bruevich,
Saied Md Pratik,
Andrew J. Musser,
Vitaly Podzorov,
Jean-Luc Bredas,
Veaceslav Coropceanu,
Artem A. Bakulin
Abstract:
Singlet fission (SF) is a multielectron process in which one singlet exciton S converts into a pair of triplet excitons T+T. SF is widely studied as it may help overcome the Shockley-Queisser efficiency limit for semiconductor photovoltaic cells. To elucidate and control the SF mechanism, great attention has been given to the identification of intermediate states in SF materials, which often appea…
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Singlet fission (SF) is a multielectron process in which one singlet exciton S converts into a pair of triplet excitons T+T. SF is widely studied as it may help overcome the Shockley-Queisser efficiency limit for semiconductor photovoltaic cells. To elucidate and control the SF mechanism, great attention has been given to the identification of intermediate states in SF materials, which often appear elusive due to the complexity and fast timescales of the SF process. Here, we apply 10fs-1ms transient absorption techniques to high-purity rubrene single crystals to disentangle the intrinsic fission dynamics from the effects of defects and grain boundaries and to identify reliably the fission intermediates. We show that above-gap excitation directly generates a hybrid vibronically assisted mixture of singlet state and triplet-pair multiexciton [S:TT], which rapidly (<100fs) and coherently branches into pure singlet or triplet excitations. The relaxation of [S:TT] to S is followed by a relatively slow and temperature-activated (48 meV activation energy) incoherent fission process. The SF competing pathways and intermediates revealed here unify the observations and models presented in previous studies of SF in rubrene and propose alternative strategies for the development of SF-enhanced photovoltaic materials.
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Submitted 21 August, 2023;
originally announced August 2023.
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Multi-Pulse Terahertz Spectroscopy Unveils Hot Polaron Photoconductivity Dynamics in Metal-Halide Perovskites
Authors:
Xijia Zheng,
Thomas R. Hopper,
Andrei Gorodetsky,
Marios Maimaris,
Weidong Xu,
Bradley A. A. Martin,
Jarvist M. Frost,
Artem A. Bakulin
Abstract:
The behavior of hot carriers in metal-halide perovskites (MHPs) present a valuable foundation for understanding the details of carrier-phonon coupling in the materials as well as the prospective development of highly efficient hot carrier and carrier multiplication solar cells. Whilst the carrier population dynamics during cooling have been intensely studied, the evolution of the hot carrier prope…
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The behavior of hot carriers in metal-halide perovskites (MHPs) present a valuable foundation for understanding the details of carrier-phonon coupling in the materials as well as the prospective development of highly efficient hot carrier and carrier multiplication solar cells. Whilst the carrier population dynamics during cooling have been intensely studied, the evolution of the hot carrier properties, namely the hot carrier mobility, remain largely unexplored. To address this, we introduce a novel ultrafast visible pump - infrared push - terahertz probe spectroscopy (PPP-THz) to monitor the real-time conductivity dynamics of cooling carriers in methylammonium lead iodide. We find a decrease in mobility upon optically depositing energy into the carriers, which is typical of band-transport. Surprisingly, the conductivity recovery dynamics are incommensurate with the intraband relaxation measured by an analogous experiment with an infrared probe (PPP- IR), and exhibit a negligible dependence on the density of hot carriers. These results and the kinetic modelling reveal the importance of highly-localized lattice heating on the mobility of the hot electronic states. This collective polaron-lattice phenomenon may contribute to the unusual photophysics observed in MHPs and should be accounted for in devices that utilize hot carriers.
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Submitted 19 August, 2021; v1 submitted 30 June, 2021;
originally announced June 2021.
