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Electronic Correlations in Multielectron Silicon Quantum Dots
Authors:
Dylan H. Liang,
MengKe Feng,
Philip Y. Mai,
Jesus D. Cifuentes,
Andrew S. Dzurak,
Andre Saraiva
Abstract:
Silicon quantum computing has the potential to revolutionize technology with capabilities to solve real-life problems that are computationally complex or even intractable for modern computers [1] by offering sufficient high quality qubits to perform complex error-corrected calculations. Silicon metal-oxide-semiconductor based quantum dots present a promising pathway for realizing practical quantum…
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Silicon quantum computing has the potential to revolutionize technology with capabilities to solve real-life problems that are computationally complex or even intractable for modern computers [1] by offering sufficient high quality qubits to perform complex error-corrected calculations. Silicon metal-oxide-semiconductor based quantum dots present a promising pathway for realizing practical quantum computers. To improve certain qubit properties, it is a common strategy to incorporate multiple electrons in the same dot in order to form qubits in higher confined orbital states. Theoretical modelling is an essential part of understanding the quantum behaviour of these electrons, providing a basis for validating the physical working of device models as well as providing insights into experimental data.
Hartree-Fock theory is an imperative tool for the electronic structure modelling of multi-electron quantum dots due to its ability to simulate a large number of electrons with manageable computation load. However, an efficient calculation of the self-consistent field becomes hard because dot formations in silicon are characterized by strong electron-electron interactions and conduction band valleys, besides the relatively high comparative effective mass, which add to create a behaviour dominated by repulsion between electrons rather than a well established shell structure. In this paper, we present a Hartree-Fock-based method that accounts for these complexities for the modelling of silicon quantum dots. With this method, we first establish the significance of including electron-electron interactions and valley degree of freedom and their implications. We then explore a simple case of anisotropic dots and observe the impact of anisotropy on dot formations.
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Submitted 5 July, 2024;
originally announced July 2024.
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Path integral simulation of exchange interactions in CMOS spin qubits
Authors:
Jesús D. Cifuentes,
Philip Y. Mai,
Frédéric Schlattner,
H. Ekmel Ercan,
MengKe Feng,
Christopher C. Escott,
Andrew S. Dzurak,
Andre Saraiva
Abstract:
The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interaction…
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The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interactions of three-dimensional electrically defined quantum dots. We apply this model to silicon metal-oxide-semiconductor (MOS) devices and we benchmark our method against well-tested full configuration interaction (FCI) simulations. As an application, we study the impact of a single charge trap on two exchanging dots, opening the possibility of using this code to test the tolerance to disorder of CMOS devices. This algorithm provides an accurate description of this system, setting up an initial step to integrate PIMC algorithms into development of semiconductor quantum computers.
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Submitted 3 August, 2023; v1 submitted 7 July, 2023;
originally announced July 2023.
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Bounds to electron spin qubit variability for scalable CMOS architectures
Authors:
Jesús D. Cifuentes,
Tuomo Tanttu,
Will Gilbert,
Jonathan Y. Huang,
Ensar Vahapoglu,
Ross C. C. Leon,
Santiago Serrano,
Dennis Otter,
Daniel Dunmore,
Philip Y. Mai,
Frédéric Schlattner,
MengKe Feng,
Kohei Itoh,
Nikolay Abrosimov,
Hans-Joachim Pohl,
Michael Thewalt,
Arne Laucht,
Chih Hwan Yang,
Christopher C. Escott,
Wee Han Lim,
Fay E. Hudson,
Rajib Rahman,
Andrew S. Dzurak,
Andre Saraiva
Abstract:
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, co…
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Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and develo** theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.
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Submitted 5 July, 2024; v1 submitted 26 March, 2023;
originally announced March 2023.
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On-demand electrical control of spin qubits
Authors:
Will Gilbert,
Tuomo Tanttu,
Wee Han Lim,
MengKe Feng,
Jonathan Y. Huang,
Jesus D. Cifuentes,
Santiago Serrano,
Philip Y. Mai,
Ross C. C. Leon,
Christopher C. Escott,
Kohei M. Itoh,
Nikolay V. Abrosimov,
Hans-Joachim Pohl,
Michael L. W. Thewalt,
Fay E. Hudson,
Andrea Morello,
Arne Laucht,
Chih Hwan Yang,
Andre Saraiva,
Andrew S. Dzurak
Abstract:
Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnet…
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Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors.
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Submitted 18 March, 2022; v1 submitted 17 January, 2022;
originally announced January 2022.
