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Large electro-opto-mechanical coupling in VO2 neuristors
Authors:
Upanya Khandelwal,
Rama Satya Sandilya,
Rajeev Kumar Rai,
Deepak Sharma,
Smruti Rekha Mahapatra,
Debasish Mondal,
Navakanta Bhat,
Naga Phani Aetkuri,
Sushobhan Avasthi,
Saurabh Chandorkar,
Pavan Nukala
Abstract:
Biological neurons are electro-mechanical systems, where the generation and propagation of an action potential is coupled to generation and transmission of an acoustic wave. Neuristors, such as VO2, characterized by insulator-metal transition (IMT) and negative differential resistance, can be engineered as self-oscillators, which are good approximations of biological neurons in the domain of elect…
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Biological neurons are electro-mechanical systems, where the generation and propagation of an action potential is coupled to generation and transmission of an acoustic wave. Neuristors, such as VO2, characterized by insulator-metal transition (IMT) and negative differential resistance, can be engineered as self-oscillators, which are good approximations of biological neurons in the domain of electrical signals. In this study, we show that these self-oscillators are coupled electro-opto-mechanical systems, with better energy conversion coefficients than the conventional electromechanical or electrooptical materials. This is due to the significant contrast in the material's resistance, optical refractive index and density across the induced temperature range in a Joule heating driven IMT. We carried out laser interferometry to measure the opto-mechanical response while simultaneously driving the devices electrically into self-oscillations of different kinds. We analyzed films of various thicknesses, engineered device geometry and performed analytical modelling to decouple the effects of refractive index change vis-a-vis mechanical strain in the interferometry signal. We show that the effective piezoelectric coefficient (d13*) for our neuristor devices is 660 pm/V, making them viable alternatives to Pb-based piezoelectrics for MEMS applications. Furthermore, we show that the effective electro-optic coefficient (r13*) is ~22 nm/V, which is much larger than that in thin-film and bulk Pockels materials.
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Submitted 25 June, 2023;
originally announced June 2023.
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Modulation-Do** a Correlated Electron Insulator
Authors:
Debasish Mondal,
Smruti Rekha Mahapatra,
Abigail M Derrico,
Rajeev Kumar Rai,
Jay R Paudel,
Christoph Schlueter,
Andrei Gloskovskii,
Rajdeep Banerjee,
Frank M F DeGroot,
Dipankar D Sarma,
Awadhesh Narayan,
Pavan Nukala,
Alexander X Gray,
Naga Phani B Aetukuri
Abstract:
Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modu…
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Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at do** concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-do** as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.
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Submitted 7 January, 2023;
originally announced January 2023.
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Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions
Authors:
Debasish Mondal,
Smruti Rekha Mahapatra,
Tanweer Ahmed,
Suresh Kumar Podapangi,
Arindam Ghosh,
Naga Phani B. Aetukuri
Abstract:
Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. Howeve…
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Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. However, the deposition of rutile oxides, such as VO$_2$, with atomic-layer precision has been challenging. In this work, we used pulsed laser deposition (PLD) to grow atomically-smooth VO$_2$ thin films on rutile TiO$_2$ (101) substrates. We show that optimal substrate preparation procedure followed by the deposition of VO$_2$ films at a temperature conducive for step-flow growth mode is essential for achieving atomically-smooth VO$_2$ films. The films deposited at optimal substrate temperatures show a step and terrace structure of the underlying TiO$_2$ substrate. At lower deposition temperatures, there is a transition to a mixed growth mode comprising of island growth and layer-by-layer growth modes. VO$_2$ films deposited at optimal substrate temperatures undergo a metal to insulator transition at a transition temperature of $\sim$325 K with $\sim$10$^3$ times increase in resistance, akin to MIT in bulk VO$_2$.
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Submitted 8 August, 2019;
originally announced August 2019.
