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A Geometry of entanglement and entropy
Authors:
Ramita Sarkar,
Soumik Mahanti,
Prasanta K. Panigrahi
Abstract:
This paper explores the fundamental relationship between the geometry of entanglement and von Neumann entropy, shedding light on the intricate nature of quantum correlations. We provide a comprehensive overview of entanglement, highlighting its crucial role in quantum mechanics. Our focus centers on the connection between entanglement, von Neumann entropy, a measure of the information content with…
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This paper explores the fundamental relationship between the geometry of entanglement and von Neumann entropy, shedding light on the intricate nature of quantum correlations. We provide a comprehensive overview of entanglement, highlighting its crucial role in quantum mechanics. Our focus centers on the connection between entanglement, von Neumann entropy, a measure of the information content within quantum systems and the geometry of composite Hilbert spaces. We discuss various methods for quantifying and characterizing entanglement through a geometric perspective and elucidate how this connection unveils the nature of quantum entanglement, offering valuable insights into the underlying structure of quantum systems. This study underscores the significance of geometry as a key tool for understanding the rich landscape of quantum correlations and their implications across various domains of physics and information theory. An example of entanglement as an indispensable resource for the task of state teleportation is presented at the end.
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Submitted 31 May, 2024; v1 submitted 24 February, 2024;
originally announced February 2024.
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Semi-device-independent certification of quantum non-Markovianity using sequential Random Access Codes
Authors:
Abhinash Kumar Roy,
Varun Srivastava,
Soumik Mahanti,
Christina Giarmatzi,
Alexei Gilchrist
Abstract:
The characterization of multi-time correlations in open quantum systems is of fundamental importance. In this work, we investigate multi-time processes using the process matrix formalism and show that the presence of a quantum non-Markovian environment plays a significant role in enhancing the communication capacity in sequential prepare-transform-measure Quantum Random Access Codes (QRAC). The co…
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The characterization of multi-time correlations in open quantum systems is of fundamental importance. In this work, we investigate multi-time processes using the process matrix formalism and show that the presence of a quantum non-Markovian environment plays a significant role in enhancing the communication capacity in sequential prepare-transform-measure Quantum Random Access Codes (QRAC). The correlated environment enables a quantum advantage to multiple parties, even with projective measurements. In particular, we show that the Markovian and classical non-Markovian processes, i.e. quantum processes with classical feedback from the environment, do not yield sequential quantum advantage. In contrast, it is possible to achieve an advantage in the presence of a quantum non-Markovian environment. Therefore this approach allows a semi-device-independent certification of quantum non-Markovianity. As opposed to entanglement-detection criteria which require the knowledge of the complete process, this method allows to certify the presence of a quantum non-Markovian environment from the observed measurement statistics. Moreover, quantum memory ameliorates the unambiguous certifiable region of unsharp instruments in a semi-device-independent manner.
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Submitted 28 September, 2023;
originally announced September 2023.
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Layer-dependent electronic structures and magnetic ground states of polar-polar $\rm{LaVO_3/KTaO_3}$ (001) interfaces
Authors:
Shubham Patel,
Narayan Mohanta,
Snehasish Nandy,
Subhendra D. Mahanti,
A Taraphder
Abstract:
Employing a first-principles and model Hamiltonian approach, we work out the electronic properties of polar-polar LaVO$_3$/KTaO$_3$ (LVO/KTO, 001) hetero-interfaces, considering configurations with up to six layers of KTO and five layers of LVO. Our computational analyses indicate the existence of multiple Lifshitz transitions (LT) within the $t_{2g}$ bands, potentially manifesting in elevated the…
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Employing a first-principles and model Hamiltonian approach, we work out the electronic properties of polar-polar LaVO$_3$/KTaO$_3$ (LVO/KTO, 001) hetero-interfaces, considering configurations with up to six layers of KTO and five layers of LVO. Our computational analyses indicate the existence of multiple Lifshitz transitions (LT) within the $t_{2g}$ bands, potentially manifesting in elevated thermal conductivity and Seebeck coefficient. The Lifshitz transitions can be fine-tuned by adjusting the number of LVO layers or applying gate voltage. Contrary to experimental report, the spin-orbit coupling is found to be negligible, originating solely from the Ta $5d_{xy}$-derived band of KTO, while the 5$d_{xz}$ and 5$d_{yz}$ bands are considerably away from the Fermi level and LVO overlayers playing no role in it. The magnetic properties of the interfaces, due to Vanadium ions, exhibit a pronounced sensitivity to the number of LVO and KTO layers. Spin-polarized density of states reveals that the interfaces featuring ferromagnetic (FM) ground states are \textit{half-metallic}. The small energy differences between antiferromagnetic (AFM) and ferromagnetic (FM) configurations suggest a potential coexistence of competing AFM and FM ground states within these interfaces. Moreover, we find that an insulator to metal transition at the interface requires a distinct number of LVO layers: a half-metallic FM state appears for two and more LVO layers and a metallic AFM state is found from four LVO layers onwards. The experimentally observed critical thickness for metallicity, therefore, requires consideration of the magnetic interactions. Additionally, we observe that the oxygen-mediated superexchange mechanism governs the behavior of AFM insulators, whereas direct exchange is responsible for the metallic and \textit{half-metallic} traits.
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Submitted 9 December, 2023; v1 submitted 13 July, 2023;
originally announced July 2023.
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Geometric genuine multipartite entanglement for four-qubit systems
Authors:
Ansh Mishra,
Soumik Mahanti,
Abhinash Kumar Roy,
Prasanta K. Panigrahi
Abstract:
Xie and Eberly introduced a genuine multipartite entanglement (GME) measure `concurrence fill'(\textit{Phys. Rev. Lett., \textbf{127}, 040403} (2021)) for three-party systems. It is defined as the area of a triangle whose side lengths represent squared concurrence in each bi-partition. However, it has been recently shown that concurrence fill is not monotonic under LOCC, hence not a faithful measu…
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Xie and Eberly introduced a genuine multipartite entanglement (GME) measure `concurrence fill'(\textit{Phys. Rev. Lett., \textbf{127}, 040403} (2021)) for three-party systems. It is defined as the area of a triangle whose side lengths represent squared concurrence in each bi-partition. However, it has been recently shown that concurrence fill is not monotonic under LOCC, hence not a faithful measure of entanglement. Though it is not a faithful entanglement measure, it encapsulates an elegant geometric interpretation of bipartite squared concurrences. There have been a few attempts to generalize GME measure to four-party settings and beyond. However, some of them are not faithful, and others simply lack an elegant geometric interpretation. The recent proposal from Xie et al. constructs a concurrence tetrahedron, whose volume gives the amount of GME for four-party systems; with generalization to more than four parties being the hypervolume of the simplex structure in that dimension. Here, we show by construction that to capture all aspects of multipartite entanglement, one does not need a more complex structure, and the four-party entanglement can be demonstrated using \textit{2D geometry only}. The subadditivity together with the Araki-Lieb inequality of linear entropy is used to construct a direct extension of the geometric GME to four-party systems resulting in quadrilateral geometry. Our measure can be geometrically interpreted as a combination of three quadrilaterals whose sides result from the concurrence in one-to-three bi-partition, and diagonal as concurrence in two-to-two bipartition.
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Submitted 11 August, 2023; v1 submitted 21 December, 2022;
originally announced December 2022.
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Classification and Quantification of Entanglement Through Wedge Product and Geometry
Authors:
Soumik Mahanti,
Sagnik Dutta,
Prasanta K. Panigrahi
Abstract:
Wedge product of post-measurement vectors leading to an `area' measure of the parallelogram has been shown to give the generalized I-concurrence measure of entanglement. Extending the wedge product formalism to multi qudit systems, we have presented a modified faithful entanglement measure, incorporating the higher dimensional volume and the area elements of the parallelepiped formed by the post-m…
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Wedge product of post-measurement vectors leading to an `area' measure of the parallelogram has been shown to give the generalized I-concurrence measure of entanglement. Extending the wedge product formalism to multi qudit systems, we have presented a modified faithful entanglement measure, incorporating the higher dimensional volume and the area elements of the parallelepiped formed by the post-measurement vectors. The measure fine grains the entanglement monotone, wherein different entangled classes manifest with different geometries. We have presented a complete analysis for the bipartite qutrit case considering all possible geometric structures. Three entanglement classes can be identified with different geometries of post-measurement vectors, namely three planar vectors, three mutually orthogonal vectors, and three vectors that are neither planar and not all of them are mutually orthogonal. It is further demonstrated that the geometric condition of area and volume maximization naturally leads to the maximization of entanglement. The wedge product approach uncovers an inherent geometry of entanglement and is found to be very useful for characterization and quantification of entanglement in higher dimensional systems.
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Submitted 1 September, 2022;
originally announced September 2022.
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Anomalous pum** in the non-Hermitian Rice-Mele model
Authors:
Abhishek Kumar,
Sarbajit Mazumdar,
S D Mahanti,
Kush Saha
Abstract:
We study topological charge pum** (TCP) in the Rice-Mele (RM) model with irreciprocal hop**. The non-Hermiticity gives rise to interesting pum** physics, owing to the presence of skin effect and exceptional points. In the static 1D RM model, we observe two independent tuning knobs that drive the topological transition, viz., non-Hermitian parameter $γ$ and system size $N$. To elucidate the s…
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We study topological charge pum** (TCP) in the Rice-Mele (RM) model with irreciprocal hop**. The non-Hermiticity gives rise to interesting pum** physics, owing to the presence of skin effect and exceptional points. In the static 1D RM model, we observe two independent tuning knobs that drive the topological transition, viz., non-Hermitian parameter $γ$ and system size $N$. To elucidate the system-size dependency, we made use of the finite-size generalized Brillouin zone (GBZ) scheme. This scheme captures the state pum** of topological edge modes in the static 1D RM model and provides further insight into engineering novel gapless exceptional edge modes with the help of adiabatic drive. Finally, we apply three types of adiabatic protocols to study TCP in the 1+1D RM model. We further explain the number of pumped charges (in each period) using a non-Bloch topological invariant. This exactly explains the presence of different pum** phases in the non-Hermitian RM model as we tune the non-Hermitian parameter $γ$. We observe that in a non-Hermitian system, even a trivial adiabatic protocol can lead to pum** that has no Hermitian counterpart.
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Submitted 14 November, 2023; v1 submitted 7 October, 2021;
originally announced October 2021.
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'Complementarity' in paraxial and non-paraxial optical beams
Authors:
Abhinash Kumar Roy,
Nitish Kumar Chandra,
Soumik Mahanti,
Prasanta K. Panigrahi
Abstract:
Establishing the correspondence of two dimensional paraxial and three dimensional non-paraxial optical beams with the qubit and qutrit systems respectively, we derive a complementary relation between Hilbert-Schmidt coherence, generalized predictability and linear entropy. The linear entropy, a measure of mixedness is shown to saturate the complementarity relation for mixed bi-partite states. For…
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Establishing the correspondence of two dimensional paraxial and three dimensional non-paraxial optical beams with the qubit and qutrit systems respectively, we derive a complementary relation between Hilbert-Schmidt coherence, generalized predictability and linear entropy. The linear entropy, a measure of mixedness is shown to saturate the complementarity relation for mixed bi-partite states. For pure two qubit and qutrit systems, it quantifies the global entanglement and reduces the complementarity relation to the triality relation between coherence, predictability and entanglement. We analyze these relations in wedge-product formalism in order to investigate the innate geometry of the complex vector space. The derived complementary relations offer insights into our ability to manipulate and utilize quantum properties for practical advancements.
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Submitted 26 December, 2023; v1 submitted 28 April, 2021;
originally announced April 2021.
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Quantum fluctuation effects on the ordered Moments in a two dimensional frustrated ferrimagnet
Authors:
Kingshuk Majumdar,
Subhendra D. Mahanti
Abstract:
We propose a novel two-dimensional (2D)frustrated quantum spin-1/2 anisotropic Heisenberg model with alternating ferromagnetic and antiferromagnetic magnetic chains along one direction and antiferromagnetic interactions along the other. The (mean-field) ground state is ferrimagnetic in certain range of the interaction space. Spin-wave theory analysis of the reduction of ordered moments at inequiva…
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We propose a novel two-dimensional (2D)frustrated quantum spin-1/2 anisotropic Heisenberg model with alternating ferromagnetic and antiferromagnetic magnetic chains along one direction and antiferromagnetic interactions along the other. The (mean-field) ground state is ferrimagnetic in certain range of the interaction space. Spin-wave theory analysis of the reduction of ordered moments at inequivalent spin sites and the instability of the spin waves suggest a quantum phase transition which has the characteristics of both the frustrated two-dimensional antiferromagnetic S=1/2 ($J_1, J_2$) model and 1D S$_1$=1, S$_2$=1/2 quantum ferrimagnetic model.
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Submitted 18 January, 2021;
originally announced January 2021.
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Coexistence and interaction of spinons and magnons in an antiferromagnet with alternating antiferromagnetic and ferromagnetic quantum spin chains
Authors:
H. Zhang,
Z. Zhao,
D. Gautreau,
M. Raczkowski,
A. Saha,
V. O. Garlea,
H. Cao,
T. Hong,
H. O. Jeschke,
Subhendra D. Mahanti,
T. Birol,
F. F. Assaad,
X. Ke
Abstract:
In conventional quasi-one-dimensional antiferromagnets with quantum spins, magnetic excitations are carried by either magnons or spinons in different energy regimes: they do not coexist independently, nor could they interact with each other. In this Letter, by combining inelastic neutron scattering, quantum Monte Carlo simulations and Random Phase Approximation calculations, we report the discover…
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In conventional quasi-one-dimensional antiferromagnets with quantum spins, magnetic excitations are carried by either magnons or spinons in different energy regimes: they do not coexist independently, nor could they interact with each other. In this Letter, by combining inelastic neutron scattering, quantum Monte Carlo simulations and Random Phase Approximation calculations, we report the discovery and discuss the physics of the coexistence of magnons and spinons and their interactions in Botallackite-Cu2(OH)3Br. This is a unique quantum antiferromagnet consisting of alternating ferromagnetic and antiferromagnetic Spin-1/2 chains with weak inter-chain couplings. Our study presents a new paradigm where one can study the interaction between two different types of magnetic quasiparticles, magnons and spinons.
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Submitted 29 July, 2020; v1 submitted 18 June, 2020;
originally announced June 2020.
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Evidence for nitrogen gas surface do** of the Bi$_2$Se$_3$ topological insulator
Authors:
Michael Gottschalk,
Mal-Soon Lee,
Eric Goodwin,
Camille Mikolas,
Thomas Chasapis,
Duck Young Chung,
Mercouri Kanatzidis,
S. D. Mahanti,
Stuart Tessmer
Abstract:
Using scanning tunneling spectroscopy we have studied the effects of nitrogen gas exposure on the bismuth selenide density of states. We observe a shift in the Dirac point which is qualitatively consistent with theoretical modeling of nitrogen binding to selenium vacancies. In carefully controlled measurements, Bi$_2$Se$_3$ crystals were initially cleaved in a helium gas environment and then expos…
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Using scanning tunneling spectroscopy we have studied the effects of nitrogen gas exposure on the bismuth selenide density of states. We observe a shift in the Dirac point which is qualitatively consistent with theoretical modeling of nitrogen binding to selenium vacancies. In carefully controlled measurements, Bi$_2$Se$_3$ crystals were initially cleaved in a helium gas environment and then exposed to a 22 SCFH flow of ultra-high purity N$_2$ gas. We observe a resulting change in the spectral curves, with the exposure effect saturating after approximately 50 minutes, ultimately bringing the Dirac point about 50 meV closer to the Fermi level. These results are compared to density functional theoretical calculations, which support a picture of $N_2$ molecules physisorbing near Se vacancies and dissociating into individual N atoms which then bind strongly to Se vacancies. In this interpretation, the binding of the N atom to a Se vacancy site removes the surface defect state created by the vacancy and changes the position of the Fermi energy with respect to the Dirac point.
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Submitted 3 April, 2020;
originally announced April 2020.
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Site-substitution in GdMnO3 : effects on structural, electronic and magnetic properties
Authors:
Sudipta Mahana,
Bipul Rakshit,
Pronoy Nandi,
Raktima Basu,
Sandip Dhara,
U. Manju,
Subhendra D. Mahanti,
D. Topwal
Abstract:
We report on detailed structural, electronic and magnetic studies of GdMn$_{1-x}$Cr$_x$O$_3$ for Cr do** levels 0 $\le$ $x$ $\le$ 1. In the solid solutions, the Jahn-Teller distortion associated with Mn$^{3+}$ ions gives rise to major changes in the ${bc}$-plane sub-lattice and also the effective orbital ordering in the ${ab}$-plane, which persist up to the compositions $x$ $\sim$ 0.35. These di…
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We report on detailed structural, electronic and magnetic studies of GdMn$_{1-x}$Cr$_x$O$_3$ for Cr do** levels 0 $\le$ $x$ $\le$ 1. In the solid solutions, the Jahn-Teller distortion associated with Mn$^{3+}$ ions gives rise to major changes in the ${bc}$-plane sub-lattice and also the effective orbital ordering in the ${ab}$-plane, which persist up to the compositions $x$ $\sim$ 0.35. These distinct features in the lattice and orbital degrees of freedom are also correlated with $bc$-plane anisotropy of the local Gd environment. A gradual evolution of electronic states with do** is also clearly seen in O $K$-edge x-ray absorption spectra. Evidence of magnetization reversal in field-cooled-cooling mode for $x$ $\ge$ 0.35 coinciding the Jahn-Teller crossover, suggests a close correlation between magnetic interaction and structural distortion. These observations indicate a strong entanglement between lattice, spin, electronic and orbital degrees of freedom. The nonmonotonic variation of remnant magnetization can be explained by do** induced modification of magnetic interactions. Density functional theory calculations are consistent with a layer-by-layer type do** with ferromagnetic (antiferomagnetic) coupling between Mn (Cr) ions for intermediate compound ($x$ = 0.5), which is distinct from that observed for the end members GMnO$_3$ and GdCrO$_3$.
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Submitted 6 August, 2019;
originally announced August 2019.
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Quantum Robots Can Fly; Play Games: An IBM Quantum Experience
Authors:
Soumik Mahanti,
Santanu Das,
Bikash K. Behera,
Prasanta K. Panigrahi
Abstract:
Quantum Robot is an excellent future application that can be achieved with the help of a quantum computer. As a practical example, quantum controlled Braitenberg vehicles proposed by Raghuvanshi et al. [Proceedings of the 37th International Symposium on Multiple-Valued Logic (2007)] is a mobile quantum system and hence acts as a quantum robot. Braitenberg vehicles are simple circuit robots which c…
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Quantum Robot is an excellent future application that can be achieved with the help of a quantum computer. As a practical example, quantum controlled Braitenberg vehicles proposed by Raghuvanshi et al. [Proceedings of the 37th International Symposium on Multiple-Valued Logic (2007)] is a mobile quantum system and hence acts as a quantum robot. Braitenberg vehicles are simple circuit robots which can experience natural behaviours like fear, aggression and love etc. These robots can be controlled by quantum circuits incorporating quantum principles such as entanglement and superposition. Complex behaviours can be mimicked by a quantum circuit that can be implemented in a quantum robot. Here we investigate the scheme of Raghuvanshi et al. and propose a new quantum circuit to make the quantum robot fly. We demonstrate one of its application in playing a game. The quantum robot we present here shows the behaviour of `fear' and its movement is deterministic in nature. This phenomenon can be successfully modelled in a game, where it can always avoid accident. The proposed quantum circuit is designed in IBM quantum experience describing the above protocol.
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Submitted 27 May, 2019;
originally announced May 2019.
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Spin dynamics of antiferromagnetically coupled ferromagnetic bilayers -- the case of Cr$_2$WO$_6$ and Cr$_2$MoO$_6$
Authors:
Kingshuk Majumdar,
Subhendra D. Mahanti
Abstract:
Recent inelastic neutron diffraction measurements on Cr$_2$(Te, W, Mo)O$_6$ have revealed that these systems consist of bilayers of spin-3/2 Cr$^{3+}$ ions with strong antiferromagnetic inter-bilayer coupling and tuneable intra-bilayer coupling from ferro (for W and Mo) to antiferro (for Te). These measurements have determined the ground state spin structure and the values of sublattice magnetizat…
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Recent inelastic neutron diffraction measurements on Cr$_2$(Te, W, Mo)O$_6$ have revealed that these systems consist of bilayers of spin-3/2 Cr$^{3+}$ ions with strong antiferromagnetic inter-bilayer coupling and tuneable intra-bilayer coupling from ferro (for W and Mo) to antiferro (for Te). These measurements have determined the ground state spin structure and the values of sublattice magnetization, which shows significant reduction of sublattice magnetization from the atomic spin value of 3.0$μ_B$ for Cr$^{3+}$ atoms. In an earlier paper we theoretically investigated the low temperature spin dynamics of Cr$_2$TeO$_6$ bilayer system where both the intra and inter-bilayer couplings are antiferromagnetic. In this paper we investigate Cr$_2$WO$_6$ and Cr$_2$MoO$_6$ systems where intra-bilayer exchange couplings are ferromagnetic but the inter-bilayer exchange couplings are antiferromagnetic. We obtain the magnon dispersion, sublattice magnetization, two-magnon density of states, longitudinal spin-spin correlation function, and its powder average and compare the results for these systems with results for Cr$_2$TeO$_6$.
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Submitted 20 March, 2019;
originally announced March 2019.
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Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition
Authors:
M. Zhu,
J. Peng,
T. Zou,
K. Prokes,
S. D. Mahanti,
T. Hong,
Z. Q. Mao,
G. Q. Liu,
X. Ke
Abstract:
We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulat…
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We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.
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Submitted 7 February, 2018;
originally announced February 2018.
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Local inversion symmetry breaking and spin-phonon coupling in perovskite GdCrO3
Authors:
Sudipta Mahana,
Bipul Rakshit,
Raktima Basu,
Sandip Dhara,
Boby Joseph,
U. Manju,
Subhendra D. Mahanti,
D. Topwal
Abstract:
Our detailed temperature dependent synchrotron powder x-ray diffraction studies along with first-principles density functional perturbation theory calculations, enable us to shed light on the origin of ferroelectricity in GdCrO3. The actual lattice symmetry is found to be noncentrosymmetric orthorhombic Pna21 structure, sup- porting polar nature of the system. Polar distortion is driven by local s…
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Our detailed temperature dependent synchrotron powder x-ray diffraction studies along with first-principles density functional perturbation theory calculations, enable us to shed light on the origin of ferroelectricity in GdCrO3. The actual lattice symmetry is found to be noncentrosymmetric orthorhombic Pna21 structure, sup- porting polar nature of the system. Polar distortion is driven by local symmetry breaking and by local distortions dominated by Gd off-centering. Our study reveals an intimate analogy between GdCrO3 and YCrO3. However, a distinctive difference exists that Gd is less displacive compared to Y, which results in an orthorhombic P na21 structure in GdCrO3 in contrast to monoclinic structure in YCrO3 and consequently, decreases its polar property. This is due to the subtle forces involving Gd-4f electrons either directly or indirectly. A strong magneto-electric coupling is revealed using Raman measurements based analysis in the system below Cr-ordering temperature, indicating their relevance to ferroelectric modulation.
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Submitted 17 June, 2017;
originally announced June 2017.
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Unusual UUDD magnetic chain structure of the spin-1/2 tetragonally distorted spinel GeCu2O4
Authors:
T. Zou,
Y. -Q. Cai,
C. R. dela Cruz,
V. O. Garlea,
S. D. Mahanti,
J. -G. Cheng,
X. Ke
Abstract:
GeCu2O4 exhibits a tetragonal spinel structure due to the strong Jahn-Teller distortion associated with Cu2+ ions. We show that its magnetic structure can be described as slabs composed of a pair of layers with orthogonally oriented spin 1/2 Cu chains in the basal ab plane. The spins between the two layers within a slab are collinearly aligned while the spin directions of neighboring slabs are per…
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GeCu2O4 exhibits a tetragonal spinel structure due to the strong Jahn-Teller distortion associated with Cu2+ ions. We show that its magnetic structure can be described as slabs composed of a pair of layers with orthogonally oriented spin 1/2 Cu chains in the basal ab plane. The spins between the two layers within a slab are collinearly aligned while the spin directions of neighboring slabs are perpendicular to each other. Interestingly, we find that spins along each chain form an unusual up-up-down-down (UUDD) pattern, suggesting a non-negligible nearest-neighbor biquadratic exchange interaction in the effective classical spin Hamiltonian. We hypothesize that spin-orbit coupling and orbital mixing of Cu2+ ions in this system is non-negligible, which calls for future calculations using perturbation theory with extended Hilbert (spin and orbital) space and calculations based on density functional theory including spin-orbit coupling and looking at the global stability of the UUDD state.
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Submitted 22 October, 2016;
originally announced October 2016.
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Electronic Structure, Transport and Phonons of SrAg$Ch$F ($Ch$=S, Se, Te): Bulk Superlattice Thermoelectrics
Authors:
Vijay Kumar Gudelli,
V. Kanchana,
G. Vaitheeswaran,
David J. Singh,
A. Svane,
N. E. Christensen,
Subhendra D. Mahanti
Abstract:
We report calculations of the electronic structure, vibrational properties and transport for the p-type semiconductors, SrAg$Ch$F ($Ch$=S, Se and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 $cm^{-1}$, indicative of a material with low thermal conductivity. The bands at and near the valence band maxima are highly two dimensional, which lead…
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We report calculations of the electronic structure, vibrational properties and transport for the p-type semiconductors, SrAg$Ch$F ($Ch$=S, Se and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 $cm^{-1}$, indicative of a material with low thermal conductivity. The bands at and near the valence band maxima are highly two dimensional, which leads to high thermopowers even at high carrier concentrations, which is a combination that suggests good thermoelectric performance. These materials may be regarded as bulk realizations of superlattice thermoelectrics.
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Submitted 1 October, 2015;
originally announced October 2015.
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Spin dynamics of antiferromagnetically coupled bilayers - the case of Cr_2TeO_6
Authors:
Kingshuk Majumdar,
S. D. Mahanti
Abstract:
Understanding the dynamics of interacting quantum spins has been one of the active areas of condensed matter physics research. Recently, extensive inelastic neutron scattering measurements have been carried out in an interesting class of systems, Cr_2(W, Te, Mo)O_6. These systems consist of bilayers of Cr^{3+} spins (S=3/2) with strong antiferromagnetic inter-bilayer coupling (J) and tuneable intr…
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Understanding the dynamics of interacting quantum spins has been one of the active areas of condensed matter physics research. Recently, extensive inelastic neutron scattering measurements have been carried out in an interesting class of systems, Cr_2(W, Te, Mo)O_6. These systems consist of bilayers of Cr^{3+} spins (S=3/2) with strong antiferromagnetic inter-bilayer coupling (J) and tuneable intra-bilayer coupling (j) from ferro (for W and Mo) to antiferro (for Te). In the limit when J>|j|, the system reduces to weakly interacting quantum spin-3/2 dimers. In this paper we discuss the low-temperature magnetic properties of Cr_2TeO_6 systems where both intra-layer and inter-layer exchange couplings are antiferromagnetic, i.e. J,j>0. Using linear spin-wave theory we obtain the magnon dispersion, sublattice magnetization, two-magnon density of states, and longitudinal spin-spin correlation function.
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Submitted 24 August, 2018; v1 submitted 31 August, 2015;
originally announced September 2015.
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Exploring Packaging Strategies of Nano-embedded Thermoelectric Generators
Authors:
Aniket Singha,
Subhendra D. Mahanti,
Bhaskaran Muralidharan
Abstract:
Embedding nanostructures within a bulk matrix is an important practical approach towards the electronic engineering of high performance thermoelectric systems. For power generation applications, it ideally combines the efficiency benefit offered by low dimensional systems along with the high power output advantage offered by bulk systems. In this work, we uncover a few crucial details about how to…
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Embedding nanostructures within a bulk matrix is an important practical approach towards the electronic engineering of high performance thermoelectric systems. For power generation applications, it ideally combines the efficiency benefit offered by low dimensional systems along with the high power output advantage offered by bulk systems. In this work, we uncover a few crucial details about how to embed nanowires and nanoflakes in a bulk matrix so that an overall advantage over pure bulk may be achieved. First and foremost, we point out that a performance degradation with respect to bulk is inevitable as the nanostructure transitions to being multi moded. It is then shown that a nano embedded system of suitable cross-section offers a power density advantage over a wide range of efficiencies at higher packing fractions, and this range gradually narrows down to the high efficiency regime, as the packing fraction is reduced. Finally, we introduce a metric - \emph{the advantage factor}, to elucidate quantitatively, the enhancement in the power density offered via nano-embedding at a given efficiency. In the end, we explore the maximum effective width of nano-embedding which serves as a reference in designing generators in the efficiency range of interest.
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Submitted 3 May, 2015;
originally announced May 2015.
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Spin splitting in 2D monochalcogenide semiconductors
Authors:
Dat T. Do,
Subhendra D. Mahanti,
Chih Wei Lai
Abstract:
We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer $ε$- and $γ$-type, and odd-number $β$-type GaS, GaSe, and InSe crys…
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We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer $ε$- and $γ$-type, and odd-number $β$-type GaS, GaSe, and InSe crystals are noncentrosymmetric. The spin splittings of the UVB and the LCB near the $Γ$-point in the Brillouin zone are finite, but still smaller than those in a zinc-blende semiconductor such as GaAs. On the other hand, the spin splitting is zero in centrosymmetric bulk and even-number few-layer $β$-type GaS, GaSe, and InSe, owing to the constraint of spatial inversion symmetry. By contrast, GaTe exhibits zero spin splitting because it is centrosymmetric down to a single layer. In these monochalcogenide semiconductors, the separation of the non-degenerate conduction and valence bands from adjacent bands results in the suppression of Elliot-Yafet spin relaxation mechanism. Therefore, the electron- and hole-spin relaxation times in these systems with zero or minimal spin splittings are expected to exceed those in GaAs when the D'yakonov-Perel' spin relaxation mechanism is also suppressed.
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Submitted 4 June, 2015; v1 submitted 2 April, 2015;
originally announced April 2015.
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Charge ordering and self-assembled nanostructures in a fcc Coulomb lattice gas
Authors:
Khang Hoang,
Keyur Desai,
S. D. Mahanti
Abstract:
The compositional ordering of Ag, Pb, Sb, Te ions in (AgSbTe$_{2}$)$_{x}$(PbTe)$_{2(1-x)}$ systems possessing a NaCl structure is studied using a Coulomb lattice gas (CLG) model on a face-centered cubic (fcc) lattice and Monte Carlo simulations. Our results show different possible microstructural orderings. Ordered superlattice structures formed out of AgSbTe$_{2}$ layers separated by Pb$_{2}$Te…
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The compositional ordering of Ag, Pb, Sb, Te ions in (AgSbTe$_{2}$)$_{x}$(PbTe)$_{2(1-x)}$ systems possessing a NaCl structure is studied using a Coulomb lattice gas (CLG) model on a face-centered cubic (fcc) lattice and Monte Carlo simulations. Our results show different possible microstructural orderings. Ordered superlattice structures formed out of AgSbTe$_{2}$ layers separated by Pb$_{2}$Te$_{2}$ layers are observed for a large range of $x$ values. For $x=0.5$, we see an array of tubular structures formed by AgSbTe$_{2}$ and Pb$_{2}$Te$_{2}$ blocks. For $x=1$, AgSbTe$_{2}$ has a body-centered tetragonal (bct) structure which is in agreement with previous Monte Carlo simulation results for restricted primitive model (RPM) at closed packed density. The phase diagram of this frustrated CLG system is discussed.
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Submitted 5 January, 2015;
originally announced January 2015.
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Electronic structure of monolayers of group V atoms: Puckering and spin orbit interaction in nano-slabs
Authors:
Dat T. Do,
Subhendra D. Mahanti
Abstract:
Inspired by the observation of mass less Dirac particles associated with low energy excitations of 2-dimensional (2D) honeycomb (HC) lattices of group IV atoms (C, Si, Ge, Sn) near the Dirac points (DPs) and spin-orbit interaction (SOI) induced gaps at the DPs, we have investigated the electronic structure of 2D HC lattices of group V atoms (As, Sb, Bi). Here also one sees DPs at the K points in t…
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Inspired by the observation of mass less Dirac particles associated with low energy excitations of 2-dimensional (2D) honeycomb (HC) lattices of group IV atoms (C, Si, Ge, Sn) near the Dirac points (DPs) and spin-orbit interaction (SOI) induced gaps at the DPs, we have investigated the electronic structure of 2D HC lattices of group V atoms (As, Sb, Bi). Here also one sees DPs at the K points in the Brillouin zone for both planar (flat) and puckered sheets. Unlike the group IV systems the Fermi energy in group V systems lies above the DPs. The flat sheets are metallic but undergo structural distortions to form puckered sheets that are semiconducting. SOI profoundly alters the band structure, opens up gaps at the DPs, and in binary systems BiSb and SbAs gives large Rashba-type spin splitting. Nano-slabs of group V atoms show excellent thermoelectric properties, particularly in the hole-doped regime.
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Submitted 5 December, 2014;
originally announced December 2014.
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Tuning the magnetic exchange via a control of orbital hybridization in Cr2(Te1-xWx)O6
Authors:
M. Zhu,
D. Do,
C. R. Dela Cruz,
Z. Dun,
H. D. Zhou,
S. D. Mahanti,
X. Ke
Abstract:
We report the complex magnetic phase diagram and electronic structure of Cr2(Te1-xWx)O6 systems. While compounds with different x values possess the same crystal structure, they display different magnetic structures below and above xc = 0.7, where both the transition temperature TN and sublattice magnetization (Ms) reach a minimum. Unlike many known cases where magnetic interactions are controlled…
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We report the complex magnetic phase diagram and electronic structure of Cr2(Te1-xWx)O6 systems. While compounds with different x values possess the same crystal structure, they display different magnetic structures below and above xc = 0.7, where both the transition temperature TN and sublattice magnetization (Ms) reach a minimum. Unlike many known cases where magnetic interactions are controlled either by injection of charge carriers or by structural distortion induced via chemical do**, in the present case it is achieved by tuning the orbital hybridization between Cr 3d and O 2p orbitals through W 5d states. The result is supported by ab-initio electronic structure calculations. Through this concept, we introduce a new approach to tune magnetic and electronic properties via chemical do**.
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Submitted 3 September, 2014;
originally announced September 2014.
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Thermoelectric properties of marcasite and pyrite FeX$_2$(X=Se,Te): A first principle study
Authors:
Vijay Kumar Gudelli,
V. Kanchana,
G. Vaitheeswaran,
M. C. Valsakumar,
S. D. Mahanti
Abstract:
Electronic structure and thermoelectric properties of marcasite (m) and synthetic pyrite (p) phases of FeX$_2$ (X=Se,Te) have been investigated using first principles density functional theory and Boltzmann transport equation. The plane wave pseudopotential approximation was used to study the structural properties and full-potential linear augmented plane wave method was used to obtain the electro…
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Electronic structure and thermoelectric properties of marcasite (m) and synthetic pyrite (p) phases of FeX$_2$ (X=Se,Te) have been investigated using first principles density functional theory and Boltzmann transport equation. The plane wave pseudopotential approximation was used to study the structural properties and full-potential linear augmented plane wave method was used to obtain the electronic structure and thermoelectric properties (thermopower and power factor scaled by relaxation time). From total energy calculations we find that m-FeSe$_2$ and m-FeTe$_2$ are stable at ambient conditions and no structural transition from marcasite to pyrite is seen under the application of hydrostatic pressure. The calculated ground state structural properties agree quite well with available experiments. From the calculated thermoelectric properties, we find that both m and p forms are good candidates for thermoelectric applications. However, hole doped m-FeSe$_2$ appears to be the best among all the four systems.
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Submitted 15 February, 2014;
originally announced February 2014.
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Electronic structure of Zr-Ni-Sn systems: role of clustering and nanostructures in Half-Heusler and Heusler limits
Authors:
Dat T. Do,
S. D. Mahanti,
Jiji J. Pulikkotil
Abstract:
Half-Heusler and Heusler compounds have been of great interest for several decades for thermoelectric, magnetic, half-metallic and many other interesting properties. Among these systems, Zr-Ni-Sn compounds are interesting thermoelectrics which can go from semiconducting half-Heusler (HH) limit, ZrNiSn, to metallic Heusler (FH) limit, ZrNi$_2$Sn. Recently Makogo et al. [J. Am. Chem. Soc. 133, 18843…
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Half-Heusler and Heusler compounds have been of great interest for several decades for thermoelectric, magnetic, half-metallic and many other interesting properties. Among these systems, Zr-Ni-Sn compounds are interesting thermoelectrics which can go from semiconducting half-Heusler (HH) limit, ZrNiSn, to metallic Heusler (FH) limit, ZrNi$_2$Sn. Recently Makogo et al. [J. Am. Chem. Soc. 133, 18843 (2011)] found that dramatic improvement in the thermoelectric power factor of HH can be achieved by putting excess Ni into the system. This was attributed to an energy filtering mechanism due to the formation of FH nanostructures in the HH matrix. Using density functional theory we have investigated clustering and nanostructure formation in HH$_{1-x}$FH$_x$ systems near the HH and FH ends and found that excess Ni atoms in HH tend to stay close to each other and form nanoclusters of FH. On the other hand, there is competing interaction between Ni-vacancies in FH which prevent them from forming HH nano clusters. Effects of nano inclusions on the electronic structure at both HH and FH ends will be discussed.
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Submitted 15 May, 2014; v1 submitted 10 December, 2013;
originally announced December 2013.
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Electronically Driven Fragmentation of Silver Nanocrystals Revealed by Ultrafast Electron Crystallography
Authors:
Ramani K. Raman,
Ryan A. Murdick,
Richard J. Worhatch,
Yoshie Murooka,
Subhendra D. Mahanti,
Tzong-Ru T. Han,
Chong-Yu Ruan
Abstract:
We report an ultrafast electron diffraction study of silver nanocrystals under surface plasmon resonance excitation, leading to a concerted fragmentation. By examining simultaneously transient structural, thermal, and Coulombic signatures of the prefragmented state, an electronically driven nonthermal fragmentation scenario is proposed.
We report an ultrafast electron diffraction study of silver nanocrystals under surface plasmon resonance excitation, leading to a concerted fragmentation. By examining simultaneously transient structural, thermal, and Coulombic signatures of the prefragmented state, an electronically driven nonthermal fragmentation scenario is proposed.
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Submitted 12 September, 2013;
originally announced September 2013.
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Bonds, bands, and bandgaps in tetrahedrally bonded ternary compounds: the role of group V Lone Pairs
Authors:
Dat Do,
S. D. Mahanti
Abstract:
An interesting class of tetrahedrally coordinated ternary compounds have attracted considerable interest because of their potential as good thermoelectrics. These compounds, denoted as I$_3$-V-VI$_4$, contain three monovalent-I (Cu, Ag), one nominally pentavalent-V (P, As, Sb, Bi), and four hexavalent-VI (S, Se, Te) atoms; and can be visualized as ternary derivatives of the II-VI zincblende or wur…
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An interesting class of tetrahedrally coordinated ternary compounds have attracted considerable interest because of their potential as good thermoelectrics. These compounds, denoted as I$_3$-V-VI$_4$, contain three monovalent-I (Cu, Ag), one nominally pentavalent-V (P, As, Sb, Bi), and four hexavalent-VI (S, Se, Te) atoms; and can be visualized as ternary derivatives of the II-VI zincblende or wurtzite semiconductors, obtained by starting from four unit cells of (II-VI) and replacing four type II atoms by three type I and one type V atoms. In trying to understand their electronic structures and transport properties, some fundamental questions arise: whether V atoms are indeed pentavalent and if not how do these compounds become semiconductors, what is the role of V lone pair electrons in the origin of band gaps, and what are the general characteristics of states near the valence band maxima and the conduction band minima. We answer some of these questions using ab initio calculations (density functional methods with both local and nonlocal exchange-correlation potential).
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Submitted 11 September, 2013; v1 submitted 3 June, 2013;
originally announced June 2013.
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Antimony arsenide: Chemical ordering in the compound SbAs
Authors:
Daniel P. Shoemaker,
Thomas C. Chasapis,
Dat Do,
Melanie C. Francisco,
Duck Young Chung,
S. D. Mahanti,
Anna Llobet,
Mercouri G. Kanatzidis
Abstract:
The semimetallic Group V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their electronic bonding characteristics produce a unique crystal structure, the rhombohedral A7 structure, which accommodates lone pairs on each site. Here we show…
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The semimetallic Group V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their electronic bonding characteristics produce a unique crystal structure, the rhombohedral A7 structure, which accommodates lone pairs on each site. Here we show that the A7 structure can display chemical ordering of Sb and As, which were previously thought to mix randomly. Our structural characterization of the compound SbAs is performed by single-crystal and high-resolution synchrotron x-ray diffraction, and neutron and x-ray pair distribution function analysis. All least-squares refinements indicate ordering of Sb and As, resulting in a GeTe-type structure without inversion symmetry. High-temperature diffraction studies reveal an ordering transition around 550 K. Transport and infrared reflectivity measurements, along with first-principles calculations, confirm that SbAs is a semimetal, albeit with a direct band separation larger than that of Sb or As. Because even subtle substitutions in the semimetals, notably Bi_{1-x}Sb_x, can open semiconducting energy gaps, a further investigation of the interplay between chemical ordering and electronic structure on the A7 lattice is warranted.
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Submitted 6 October, 2012;
originally announced October 2012.
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The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3
Authors:
Megan Romanowich,
Mal-Soon Lee,
Duck-Young Chung,
Jung-Hwan Song,
S. D. Mahanti,
Mercouri G. Kanatzidis,
Stuart H. Tessmer
Abstract:
In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density functional calculations using a slab model and analysis of the partial density-of-states show that the background is consistent with bulk-…
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In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density functional calculations using a slab model and analysis of the partial density-of-states show that the background is consistent with bulk-like states with small amplitudes at the surface. The topological surface states coexist with bulk-like states in the valence band, appearing as a shoulder in the projected band structure. These results strongly support the picture suggested by recent scattering experiments of the quantum interference of topological and bulk-like surface states.
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Submitted 5 October, 2012;
originally announced October 2012.
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Frustrated classical Heisenberg and XY models in 2 dimensions with nearest neighbor exchange: exact solution for the ground state phase diagram
Authors:
L. X. Hayden,
T. A. Kaplan,
S. D. Mahanti
Abstract:
The ground state phase diagram is determined exactly for the frustrated classical Heisenberg model plus nearest-neighbor biquadratic exchange interactions on a 2-dimensional lattice. A square- and a rhombic-symmetry version are considered. There appear ferromagnetic, incommensurate-spiral, "up-up-down-down" (uudd) and canted ferromagnetic states, a non-spiral coplanar state that is an ordered vort…
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The ground state phase diagram is determined exactly for the frustrated classical Heisenberg model plus nearest-neighbor biquadratic exchange interactions on a 2-dimensional lattice. A square- and a rhombic-symmetry version are considered. There appear ferromagnetic, incommensurate-spiral, "up-up-down-down" (uudd) and canted ferromagnetic states, a non-spiral coplanar state that is an ordered vortex lattice, plus a non-coplanar ordered state (a "conical vortex lattice"). In the rhombic case, which adds biquadratic terms to the Heisenberg model used widely for insulating manganites, the uudd state found is the E-type state observed; this along with accounting essentially for the variety of ground states found in these materials, shows that this model probably contains the long-sought mechanism behind the uudd state.
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Submitted 8 April, 2010; v1 submitted 29 March, 2010;
originally announced March 2010.
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Impurity clustering and impurity-induced bands in PbTe-, SnTe-, and GeTe-based bulk thermoelectrics
Authors:
Khang Hoang,
S. D. Mahanti,
Mercouri G. Kanatzidis
Abstract:
Complex multicomponent systems based on PbTe, SnTe, and GeTe are of great interest for infrared devices and high-temperature thermoelectric applications. A deeper understanding of the atomic and electronic structure of these materials is crucial for explaining, predicting, and optimizing their properties, and to suggest new materials for better performance. In this work, we present our first-pri…
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Complex multicomponent systems based on PbTe, SnTe, and GeTe are of great interest for infrared devices and high-temperature thermoelectric applications. A deeper understanding of the atomic and electronic structure of these materials is crucial for explaining, predicting, and optimizing their properties, and to suggest new materials for better performance. In this work, we present our first-principles studies of the energy bands associated with various monovalent (Na, K, and Ag) and trivalent (Sb and Bi) impurities and impurity clusters in PbTe, SnTe, and GeTe using supercell models. We find that monovalent and trivalent impurity atoms tend to come close to one another and form impurity-rich clusters, and the electronic structure of the host materials is strongly perturbed by the impurities. There are impurity-induced bands associated with the trivalent impurities that split off from the conduction-band bottom with large shifts towards the valence-band top. This is due to the interaction between the $p$ states of the trivalent impurity cation and the divalent anion which tends to drive the systems towards metallicity. The introduction of monovalent impurities (in the presence of trivalent impurities) significantly reduces (in PbTe and GeTe) or slightly enhances (in SnTe) the effect of the trivalent impurities. One, therefore, can tailor the band gap and band structure near the band gap (hence transport properties) by choosing the type of impurity and its concentration or tuning the monovalent/trivalent ratio. Based on the calculated band structures, we are able to explain qualitatively the measured transport properties of the whole class of PbTe-, SnTe-, and GeTe-based bulk thermoelectrics.
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Submitted 3 February, 2010; v1 submitted 13 November, 2009;
originally announced November 2009.
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Defect induced rigidity enhancement in layered semiconductors
Authors:
Zs. Rak,
S. D. Mahanti,
K. C. Mandal,
N. C. Fernelius
Abstract:
We discuss the mechanism responsible for the observed improvement in the structural properties of In doped GaSe, a layered material of great current interest. Formation energy calculations show that by tuning the Fermi energy, In can substitute for Ga or can go as an interstitial charged defect$(\text{In}_{\text{i}}^{\text{3+}})$. We find that $\text{In}_{\text{i}}^{\text{3+}}$ dramatically incr…
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We discuss the mechanism responsible for the observed improvement in the structural properties of In doped GaSe, a layered material of great current interest. Formation energy calculations show that by tuning the Fermi energy, In can substitute for Ga or can go as an interstitial charged defect$(\text{In}_{\text{i}}^{\text{3+}})$. We find that $\text{In}_{\text{i}}^{\text{3+}}$ dramatically increases the shear stiffness of GaSe, explaining the observed enhancement in the rigidity of In doped p-GaSe. The mechanism responsible for rigidity enhancement discussed here is quite general and applicable to a large class of layered solids with weak interlayer bonding.
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Submitted 24 June, 2009;
originally announced June 2009.
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Comment on 'Distorted perovskite with $e_g^1$ configuration as a frustrated spin system'
Authors:
T. A. Kaplan,
S. D. Mahanti
Abstract:
Interesting magnetic structure found experimentally in a series of manganites RMnO$_3$, where R is a rare earth, was explained, ostensibly, by Kimura et al, in terms of a classical Heisenberg model with an assumed set of exchange parameters, nearest-neighbor and next-nearest-neighbor interactions, $J_n$. They calculated a phase diagram as a function of these parameters for the ground state, in w…
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Interesting magnetic structure found experimentally in a series of manganites RMnO$_3$, where R is a rare earth, was explained, ostensibly, by Kimura et al, in terms of a classical Heisenberg model with an assumed set of exchange parameters, nearest-neighbor and next-nearest-neighbor interactions, $J_n$. They calculated a phase diagram as a function of these parameters for the ground state, in which the important "up-up-down-down" or E-phase occurs for finite ratios of the $J_n$. In this Comment we show that this state does not occur for such ratios; the error is traced to an incorrect method for minimizing the energy. The correct phase diagram is given. We also point out that the finite temperature phase diagram presented there is incorrect.
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Submitted 19 May, 2009; v1 submitted 10 April, 2009;
originally announced April 2009.
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Scanning tunneling microscopy study of the CeTe3 charge density wave
Authors:
A. Tomic,
Zs. Rak,
J. P. Veazey,
S. D. Mahanti,
S. H. Tessmer,
C. D. Malliakas,
M. G. Kanatzidis
Abstract:
We have studied the nature of the surface charge distribution in CeTe3. This is a simple, cleavable, layered material with a robust one-dimensional incommensurate charge density wave (CDW). Scanning tunneling microscopy (STM) has been applied on the exposed surface of a cleaved single crystal. At 77 K, the STM images show both the atomic lattice of surface Te atoms arranged in a square net and t…
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We have studied the nature of the surface charge distribution in CeTe3. This is a simple, cleavable, layered material with a robust one-dimensional incommensurate charge density wave (CDW). Scanning tunneling microscopy (STM) has been applied on the exposed surface of a cleaved single crystal. At 77 K, the STM images show both the atomic lattice of surface Te atoms arranged in a square net and the CDW modulations oriented at 45 degrees with respect to the Te net. Fourier transform of the STM data shows Te square lattice peaks, and peaks related to the CDW oriented at 45 degrees to the lattice peaks. In addition, clear peaks are present, consistent with subsurface structure and wave vector mixing effects. These data are supported by electronic structure calculations, which show that the subsurface signal most likely arises from a lattice of Ce atoms situated 2.53 angstroms below the surface Te net.
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Submitted 19 August, 2008;
originally announced August 2008.
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Canted-spin-caused electric dipoles: a local symmetry theory
Authors:
T. A. Kaplan,
S. D. Mahanti
Abstract:
A pair of magnetic atoms with canted spins Sa, Sb can give rise to an electric dipole moment P. Several forms for the behavior of such a moment have appeared in the theoretical literature, some of which have been invoked to explain experimental results found in various multiferroic materials. The forms specifically are P1 ~ R x (Sa x Sb); P2 ~ Sa x Sb, and P3 ~ Sa (R . Sa) - Sb (R . Sb), where R i…
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A pair of magnetic atoms with canted spins Sa, Sb can give rise to an electric dipole moment P. Several forms for the behavior of such a moment have appeared in the theoretical literature, some of which have been invoked to explain experimental results found in various multiferroic materials. The forms specifically are P1 ~ R x (Sa x Sb); P2 ~ Sa x Sb, and P3 ~ Sa (R . Sa) - Sb (R . Sb), where R is the relative position of the atoms and Sa, Sb are unit vectors. To unify and generalize these various forms we consider P as the most general quadratic function of the spin components that vanishes whenever Sa and Sb are collinear, i.e. we consider the most general expressions that require spin canting. The study reveals new forms. We generalize to the vector P, Moriya's symmetry considerations regarding the (scalar) Dzyaloshinskii-Moriya energy D. Sa x Sb (which led to restrictions on D). This provides a rigorous symmetry argument which shows that P1 is allowed no matter how high the symmetry of the atoms plus environment, and gives restrictions for all other contributions. The analysis leads to the suggestion of terms omitted in the existing microscopic models, suggests a new mechanism behind the ferroelectricity found in the 'proper screw structure' of CuXO2, X=Fe, Cr, and predicts an unusual antiferroelectric ordering in the antiferromagnetically and ferroelectrically ordered phase of RbFe(MoO4)2.
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Submitted 6 April, 2011; v1 submitted 4 August, 2008;
originally announced August 2008.
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Hartree-Fock variational bounds for ground state energy of chargeless fermions with finite magnetic moment in presence of a hard core potential:A stable ferromagnetic state
Authors:
Sudhanshu S. Jha,
S. D. Mahanti
Abstract:
We use different types of determinantal Hartree-Fock (HF) wave functions to calculate variational bounds for the ground state energy of spin-half fermions in volume V_0, with mass m, electric charge zero, and magnetic moment mu, which are interacting through long range magnetic dipole-dipole interaction. We find that at high densities when the average inter particle distance r_0 becomes small co…
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We use different types of determinantal Hartree-Fock (HF) wave functions to calculate variational bounds for the ground state energy of spin-half fermions in volume V_0, with mass m, electric charge zero, and magnetic moment mu, which are interacting through long range magnetic dipole-dipole interaction. We find that at high densities when the average inter particle distance r_0 becomes small compared to the magnetic length r_m, a ferromagnetic state with spheroidal occupation function, involving quadrupolar deformation, gives a lower energy compared to the variational energy for the uniform paramagnetic state. This HF variational bound to the ground state energy turns out to have a lower energy than our earlier calculation in which instead of a determinantal wavefunction we had used a positive semi-definite single particle density matrix operator whose eigenvalues, having quadrupolar deformation, were allowed to take any value from 0 to 1. This system is of course still unstable towards infinite density collapse, but we show here explicitly that a suitable short range repulsive (hard core) interaction of strength U_0 and range a can stop this collapse.The existence of a stable high density ferromagnetic state with spheroidal occupation function is possible as long as the ratio of hard-core and magnetic dipole coupling constants is not very small compared to 1.
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Submitted 21 March, 2007;
originally announced March 2007.
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Simple microscopic model of the magneto-electric effect in non-collinear magnets
Authors:
T. A. Kaplan,
S. D. Mahanti
Abstract:
A 2-site 2-electron model with s- and p-states on each site, having constrained average site-spins S_a, S_b, with angle theta between them, simpler than the previous closely-related model of Katsura et al (KNB), is considered. Intra-site Coulomb repulsion and inter-site spin-orbit coupling V_(SO) are included. The ground state has an electric dipole moment pi consistent with the result of KNB, p…
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A 2-site 2-electron model with s- and p-states on each site, having constrained average site-spins S_a, S_b, with angle theta between them, simpler than the previous closely-related model of Katsura et al (KNB), is considered. Intra-site Coulomb repulsion and inter-site spin-orbit coupling V_(SO) are included. The ground state has an electric dipole moment pi consistent with the result of KNB, pi proportional to R x (S_a x S_b) = f, R connecting the two sites, and application to a spiral leads to ferroelectric polarization with direction f, also in agreement with the previous result. However, the present result shows the expected behavior pi goes to 0 as V_(SO) goes to 0, unlike the previous one.
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Submitted 10 August, 2006;
originally announced August 2006.
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Ab initio studies of electronic structure of defects in PbTe
Authors:
Salameh Ahmad,
S. D. Mahanti,
Khang Hoang,
M. G. Kanatzidis
Abstract:
Understanding the detailed electronic structure of deep defect states in narrow band-gap semiconductors has been a challenging problem. Recently, self-consistent ab initio calculations within density functional theory (DFT) using supercell models have been successful in tackling this problem. In this paper, we carry out such calculations in PbTe, a well-known narrow band-gap semiconductor, for a…
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Understanding the detailed electronic structure of deep defect states in narrow band-gap semiconductors has been a challenging problem. Recently, self-consistent ab initio calculations within density functional theory (DFT) using supercell models have been successful in tackling this problem. In this paper, we carry out such calculations in PbTe, a well-known narrow band-gap semiconductor, for a large class of defects: cationic and anionic substitutional impurities of different valence, and cationic and anionic vacancies. For the cationic defects, we study a series of compounds RPb2n-1Te2n, where R is vacancy or monovalent, divalent, or trivalent atom; for the anionic defects, we study compounds MPb2nTe2n-1, where M is vacancy, S, Se or I. We find that the density of states (DOS) near the top of the valence band and the bottom of the conduction band get significantly modified for most of these defects. This suggests that the transport properties of PbTe in the presence of impurities can not be interpreted by simple carrier do** concepts, confirming such ideas developed from qualitative and semi-quantitative arguments.
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Submitted 22 May, 2006;
originally announced May 2006.
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Resonant States in the Electronic Structure of the High Performance Thermoelectrics AgPb$_{m}SbTe$_{2+m}$ ; The Role of Ag-Sb Microstructures
Authors:
Daniel Bilc,
S. D. Mahanti,
Kuei-Fang Hsu,
Eric Quarez,
Robert Pcionek,
M. G. Kanatzidis
Abstract:
Ab initio electronic structure calculations based on gradient corrected density functional theory were performed on a class of novel quaternary compounds AgPb$_{m}SbTe$_{2+m}$, which were found to be excellent high temperature thermoelctrics with large figure of merit ZT ~2.2 at 800K. We find that resonant states appear near the top of the valence and bottom of the conduction bands of bulk PbTe…
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Ab initio electronic structure calculations based on gradient corrected density functional theory were performed on a class of novel quaternary compounds AgPb$_{m}SbTe$_{2+m}$, which were found to be excellent high temperature thermoelctrics with large figure of merit ZT ~2.2 at 800K. We find that resonant states appear near the top of the valence and bottom of the conduction bands of bulk PbTe when Ag and Sb replace Pb. These states can be understood in terms of modified Te-Ag(Sb) bonds. Electronic structure near the gap depends sensitively on the microstructural arrangements of Ag-Sb atoms, suggesting that large ZT values may originate from the nature of these ordering arrangements.
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Submitted 11 August, 2004; v1 submitted 6 August, 2004;
originally announced August 2004.
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Temperature dependent total scattering structural study of CaCu3Ti4O12
Authors:
E. S. Bozin,
V. Petkov,
P. W. Barnes,
P. M. Woodward,
T. Vogt,
S. D. Mahanti,
S. J. L. Billinge
Abstract:
X-ray and neutron powder diffraction data as a function of temperature are analyzed for the colossal dielectric constant material CaCu3Ti4O12. The local structure is studied using atomic pair distribution function analysis. No evidence is found for enhanced oxygen displacement parameters suggesting that short-range octahedral tilt disorder is minimal. However, an unusual temperature dependence f…
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X-ray and neutron powder diffraction data as a function of temperature are analyzed for the colossal dielectric constant material CaCu3Ti4O12. The local structure is studied using atomic pair distribution function analysis. No evidence is found for enhanced oxygen displacement parameters suggesting that short-range octahedral tilt disorder is minimal. However, an unusual temperature dependence for the atomic displacement parameters of calcium and copper is observed. Temperature dependent modeling of the structure, using bond valence concepts, suggests that the calcium atoms become underbonded below approximately 260 K, which provides a rationale for the unusually high Ca displacement parameters at low temperature.
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Submitted 11 March, 2003;
originally announced March 2003.
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Scanning Tunneling Microscopy of Defect States in the Semiconductor Bi$_2$Se$_3$
Authors:
S. Urazhdin,
D. Bilc,
S. H. Tessmer,
S. D. Mahanti,
Theodora Kyratsi,
M. G. Kanatzidis
Abstract:
Scanning tunneling spectroscopy images of Bi$_2$Se$_3$ doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model we show that the geometry of the defect states in Bi$_2$Se$_3$ can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface a…
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Scanning tunneling spectroscopy images of Bi$_2$Se$_3$ doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model we show that the geometry of the defect states in Bi$_2$Se$_3$ can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.
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Submitted 4 September, 2002; v1 submitted 20 December, 2001;
originally announced December 2001.
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Structure of nanocrystalline materials using atomic pair distribution function analysis: study of LiMoS2
Authors:
V. Petkov,
S. J. L. Billinge,
P. Larson,
S. D. Mahanti,
T. Vogt,
K. K. Rangan,
M. G. Kanatzidis
Abstract:
The structure of LiMoS2 has been experimentally determined for the first time. The approach of atomic pair distribution function (PDF) analysis was used because of the lack of well defined Bragg peaks due to the short structural coherence (~ 50 A) in this intercalation compound. This represents one of the first instances where the structure of such poorly diffracting material was determined from…
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The structure of LiMoS2 has been experimentally determined for the first time. The approach of atomic pair distribution function (PDF) analysis was used because of the lack of well defined Bragg peaks due to the short structural coherence (~ 50 A) in this intercalation compound. This represents one of the first instances where the structure of such poorly diffracting material was determined from the total scattering including diffuse as well as Bragg scattering. The reduction of Mo by Li results in Mo-Mo bonding with the formation of chains of distorted Mo-S6 octahedra. Using the refined structural parameters the electronic band-structure for this material has been calculated and is in good agreement with observed material properties.
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Submitted 15 June, 2001;
originally announced June 2001.
