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Strong atomic reconstruction in twisted bilayers of highly flexible InSe: Machine-Learned Interatomic Potential and continuum model approaches
Authors:
Samuel J. Magorrian,
Anas Siddiqui,
Nicholas D. M. Hine
Abstract:
The relaxation of atomic positions to their optimal structural arrangement is crucial for understanding the emergence of new physical behavior in long scale superstructures in twisted bilayers of two-dimensional materials. The amount of deviation from a rigid moiré structure will depend on the elastic properties of the constituent monolayers which for the twisted bilayer - the more flexible the mo…
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The relaxation of atomic positions to their optimal structural arrangement is crucial for understanding the emergence of new physical behavior in long scale superstructures in twisted bilayers of two-dimensional materials. The amount of deviation from a rigid moiré structure will depend on the elastic properties of the constituent monolayers which for the twisted bilayer - the more flexible the monolayers are, the lower the energy required to deform the layers to maximize the areas with an energetically optimal interlayer arrangement of atoms. We investigate this atomic reconstruction for twisted bilayers of highly flexible InSe. Results using two methods are demonstrated - first we train a machine-learned interatomic potential (MLIP) to enable fully atomistic relaxations of small-twist-angle large-length-scale moiré supercells while retaining density functional theory (DFT) level accuracy. We find substantial out-of-plane corrugation and in-plane domain formation for a wide range of twist angles and moiré length scales. We then adapt an existing continuum approach and show that it can reproduce some, but not all, features of the fully atomistic calculations.
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Submitted 27 June, 2024;
originally announced June 2024.
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Strain-dependent one-dimensional confinement channels in twisted bilayer 1T$'$-WTe$_2$
Authors:
Samuel J. Magorrian,
Nicholas D. M. Hine
Abstract:
The low symmetry and anistropic lattice of 1T$'$ WTe$_2$ is responsible for the existence of parallel one-dimensional channels in the moiré patterns of twisted bilayers. This gives the opportunity to explore moiré physics of a different nature to that widely observed in twisted bilayers of materials with hexagonal symmetries. Here, we combine plane-wave and linear-scaling density functional theory…
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The low symmetry and anistropic lattice of 1T$'$ WTe$_2$ is responsible for the existence of parallel one-dimensional channels in the moiré patterns of twisted bilayers. This gives the opportunity to explore moiré physics of a different nature to that widely observed in twisted bilayers of materials with hexagonal symmetries. Here, we combine plane-wave and linear-scaling density functional theory calculations to describe the electronic properties of twisted bilayer 1T$'$ WTe$_2$. For a small change in the lattice parameters of the constituent 1T$'$ WTe$_2$ monolayers, we find a substantial moiré-induced striped electrostatic potential landscape in the twisted bilayer, with a peak-to-trough magnitude $>$200~meV.
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Submitted 16 April, 2024;
originally announced April 2024.
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Band alignment and interlayer hybridisation in transition metal dichalcogenide/hexagonal boron nitride heterostructures
Authors:
S. J. Magorrian,
A. J. Graham,
N. Yeung,
F. Ferreira,
P. V. Nguyen,
A. Barinov,
V. I. Fal'ko,
N. R. Wilson,
N. D. M. Hine
Abstract:
In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting band hybridisation, are key factors in determining a range of electronic properties. This work examines these effects for heterostructures of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN), an ubiquitous combination given the role of hBN as an encapsulating material. By c…
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In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting band hybridisation, are key factors in determining a range of electronic properties. This work examines these effects for heterostructures of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN), an ubiquitous combination given the role of hBN as an encapsulating material. By comparing results of density functional calculations with experimental angle-resolved photoemission spectroscopy (ARPES) results, we explore the hybridisation between the valence states of the TMD and hBN layers, and show that it introduces avoided crossings between the TMD and hBN bands, with umklapp processes opening `ghost' avoided crossings in individual bands. Comparison between DFT and ARPES spectra for the MoSe$_2$/hBN heterostructure shows that the valence bands of MoSe$_2$ and hBN are significantly further separated in energy in experiment as compared to DFT. We then show that a novel scissor operator can be applied to the hBN valence states in the DFT calculations, to correct the band alignment and enable quantitative comparison to ARPES, explaining avoided crossings and other features of band visibility in the ARPES spectra.
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Submitted 5 October, 2022; v1 submitted 19 July, 2022;
originally announced July 2022.
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Multifaceted moiré superlattice physics in twisted WSe$_2$ bilayers
Authors:
S. J. Magorrian,
V. V. Enaldiev,
V. Zólyomi,
Fábio Ferreira,
Vladimir I. Fal'ko,
David A. Ruiz-Tijerina
Abstract:
Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (…
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Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (P) and anti-parallel (AP) orientations of the monolayer unit cells. We apply these models to describe moiré superlattice effects in twisted WSe${}_2$ bilayers, in conjunction with microscopic \emph{ab initio} calculations, and considering the influence of encapsulation, pressure and an electric displacement field. Our analysis takes into account mesoscale lattice relaxation, interlayer hybridisation, piezopotentials, and a weak ferroelectric charge transfer between the layers, and describes a multitude of possibilities offered by this system, depending on the choices of P or AP orientation, twist angle magnitude, and electron/hole valley.
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Submitted 28 September, 2021; v1 submitted 10 June, 2021;
originally announced June 2021.
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Tunable spin-orbit coupling in two-dimensional InSe
Authors:
A. Ceferino,
S. J. Magorrian,
V. Zólyomi,
D. A. Bandurin,
A. K. Geim,
A. Patanè,
Z. D. Kovalyuk,
Z. R. Kudrynskyi,
I. V. Grigorieva,
V. I. Fal'ko
Abstract:
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding…
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We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.
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Submitted 8 June, 2021;
originally announced June 2021.
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Band energy landscapes in twisted homobilayers of transition metal dichalcogenides
Authors:
Fábio Ferreira,
Samuel Magorrian,
Vladimir Enaldiev,
David Ruiz-Tijerina,
Vladimir Fal'ko
Abstract:
Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heterostructures. Here, we study how interlayer hybridization, weak ferroelectric charge transfer between layers, and piezoelectric response to deformations set the valence and conduction band edges across the moir{é} superce…
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Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heterostructures. Here, we study how interlayer hybridization, weak ferroelectric charge transfer between layers, and piezoelectric response to deformations set the valence and conduction band edges across the moir{é} supercell in twistronic homobilayers of MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$. We show that, due to the lack of inversion symmetry in the monolayer crystals, bilayers with parallel (P) and anti-parallel (AP) unit cell orientations display contrasting behaviors. For P-bilayers at small twist angles we find band edges in the middle of triangular domains of preferential stacking. In AP-bilayers at marginal twist angles ($θ_{AP} < 1^\circ$) the band edges are located in small regions around the intersections of domain walls, giving highly localized quantum dot states.
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Submitted 17 June, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
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Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
Authors:
F. Ferreira,
V. V. Enaldiev,
V. I. Fal'ko,
S. J. Magorrian
Abstract:
In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs) - in particular, WSe$_2$ - for which we find a substantial stacking-dependent charge trans…
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In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs) - in particular, WSe$_2$ - for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.
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Submitted 7 June, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
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Structures of bulk hexagonal post-transition-metal chalcogenides from dispersion-corrected density-functional theory
Authors:
S. J. Magorrian,
V. Zolyomi,
N. D. Drummond
Abstract:
We use dispersion-corrected density-functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post-transition-metal chalcogenides, to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals regarding the…
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We use dispersion-corrected density-functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post-transition-metal chalcogenides, to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals regarding the energetic orderings of polytypes, but we find that for each material there are multiple stacking orders with relative energies of less than 1 meV per monolayer unit cell, implying that stacking faults are expected to be abundant in all post-transition-metal chalcogenides. By fitting a simple model to all our energy data, we predict that the most stable hexagonal structure has P$6_3$/mmc space group in each case, but that the stacking order differs between GaS, GaSe, GaTe, and InS on the one hand and InSe and InTe on the other. At zero pressure, the relative energies obtained with different functionals disagree by around 1-5 meV per monolayer unit cell, which is not sufficient to identify the most stable structure unambiguously; however, multi-GPa pressures reduce the number of competing phases significantly. At higher pressures, an AB$'$-stacked structure of the most stable monolayer polytype is found to be the most stable bulk structure; this structure has not been reported in experiments thus far.
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Submitted 18 March, 2021; v1 submitted 27 January, 2021;
originally announced January 2021.
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Piezoelectric networks and ferroelectric moiré superlattice domains in twistronic WS$_2$/MoS$_2$ and WSe$_2$/MoSe$_2$ bilayers
Authors:
V. V. Enaldiev,
F. Ferreira,
S. J. Magorrian,
V. I. Fal'ko
Abstract:
Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trap** of charge carriers and excitons by ferroelectric polarisation and piezoelectric charges by domain structures in twistronic WX$_2$/MoX$_2$ bilayers (X=S,Se). For almost aligned 2H-type bilayers, we find that holes and el…
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Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trap** of charge carriers and excitons by ferroelectric polarisation and piezoelectric charges by domain structures in twistronic WX$_2$/MoX$_2$ bilayers (X=S,Se). For almost aligned 2H-type bilayers, we find that holes and electrons are trapped in the opposite -- WMo and XX (tungsten over molybdenum {\it versus} overlaying chalcogens) -- corners of the honeycomb domain wall network, swap** their position at a twist angle $0.2^{\circ}$, with XX corners providing $30$\,meV deep traps for the interlayer excitons for all angles. In 3R-type bilayers, both electrons and holes are trapped in triangular "3R stacking" domains, where WX$_2$ chalcogens set over MoX$_2$ molybdenums, which act as $130$\,meV deep quantum boxes for interlayer excitons for twist angles $\lesssim 1^{\circ}$, for larger angles shifting towards domain wall network XX stacking sites.
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Submitted 4 February, 2021; v1 submitted 9 November, 2020;
originally announced November 2020.
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Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures
Authors:
Abigail J. Graham,
Johanna Zultak,
Matthew J. Hamer,
Viktor Zolyomi,
Samuel Magorrian,
Alexei Barinov,
Viktor Kandyba,
Alessio Giampietri,
Andrea Locatelli,
Francesca Genuzio,
Natalie C. Teutsch,
Temok Salazar,
Nicholas D. M. Hine,
Vladimir I. Fal'ko,
Roman V. Gorbachev,
Neil R. Wilson
Abstract:
In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattic…
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In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering.
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Submitted 8 January, 2021; v1 submitted 27 August, 2020;
originally announced August 2020.
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Crossover from weakly indirect to direct excitons in atomically thin films of InSe
Authors:
Adrián Ceferino,
Kok Wee Song,
Samuel J. Magorrian,
Viktor Zólyomi,
Vladimir I. Fal'ko
Abstract:
We perform a $\mathbf{k \cdot p}$ theory analysis of the spectra of the lowest energy and excited states of the excitons in few-layer atomically thin films of InSe taking into account in-plane electric polarizability of the film and the influence of the encapsulation environment. For the thinner films, the lowest-energy state of the exciton is weakly indirect in momentum space, with its dispersion…
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We perform a $\mathbf{k \cdot p}$ theory analysis of the spectra of the lowest energy and excited states of the excitons in few-layer atomically thin films of InSe taking into account in-plane electric polarizability of the film and the influence of the encapsulation environment. For the thinner films, the lowest-energy state of the exciton is weakly indirect in momentum space, with its dispersion showing minima at a layer-number-dependent wave number, due to an inverted edge of a relatively flat topmost valence band branch of the InSe film spectrum and we compute the activation energy from the momentum dark exciton ground state into the bright state. For the films with more than seven In$_2$Se$_2$ layers, the exciton dispersion minimum shifts to $Γ$-point.
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Submitted 22 June, 2020; v1 submitted 14 January, 2020;
originally announced January 2020.
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Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides
Authors:
V. V. Enaldiev,
V. Zólyomi,
C. Yelgel,
S. J. Magorrian,
V. I. Fal'ko
Abstract:
We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Pa…
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We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles $θ^{\circ}<θ^{\circ}_P\sim 2.5^{\circ}$ and $θ^{\circ}<θ^{\circ}_{AP}\sim 1^{\circ}$ for, respectively, bilayers with parallel (P) and antiparallel (AP) orientation of the monolayer unit cells and suggest how the domain structures would manifest itself in local probe scanning of marginally twisted P- and AP-bilayers.
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Submitted 5 April, 2020; v1 submitted 28 November, 2019;
originally announced November 2019.
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Atomic reconstruction in twisted bilayers of transition metal dichalcogenides
Authors:
Astrid Weston,
Yichao Zou,
Vladimir Enaldiev,
Alex Summerfield,
Nicholas Clark,
Viktor Z'olyomi,
Abigail Graham,
Celal Yelgel,
Samuel Magorrian,
Mingwei Zhou,
Johanna Zultak,
David Hopkinson,
Alexei Barinov,
Thomas Bointon,
Andrey Kretinin,
Neil R. Wilson,
Peter H. Beton,
Vladimir I. Fal'ko,
Sarah J. Haigh,
Roman Gorbachev
Abstract:
Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bil…
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Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bilayers twisted to a small angle, $θ<3^{\circ}$, reconstructs into energetically favorable stacking domains separated by a network of stacking faults. For crystal alignments close to 3R stacking, a tessellated pattern of mirror reflected triangular 3R domains emerges, separated by a network of partial dislocations which persist to the smallest twist angles. Scanning tunneling measurements show that the electronic properties of those 3R domains appear qualitatively different from 2H TMDs, featuring layer-polarized conduction band states caused by lack of both inversion and mirror symmetry. In contrast, for alignments close to 2H stacking, stable 2H domains dominate, with nuclei of an earlier unnoticed metastable phase limited to $\sim$ 5nm in size. This appears as a kagome-like pattern at $θ\sim 1^{\circ}$, transitioning at $θ\rightarrow 0$ to a hexagonal array of screw dislocations separating large-area 2H domains.
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Submitted 7 July, 2020; v1 submitted 28 November, 2019;
originally announced November 2019.
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Ultra-thin van der Waals crystals as semiconductor quantum wells
Authors:
Johanna Zultak,
Samuel Magorrian,
Maciej Koperski,
Alistair Garner,
Matthew J Hamer,
Endre Tovari,
Kostya S Novoselov,
Alexander Zhukov,
Yichao Zou,
Neil R. Wilson,
Sarah J Haigh,
Andrey Kretinin,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn't been explored in the case of 2D materials.…
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Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn't been explored in the case of 2D materials. Here we transfer this concept onto the van der Waals heterostructures which utilize few-layers films of InSe as quantum wells. The precise control over the energy of the subbands and their uniformity guarantees extremely high quality of the electronic transport in such systems. Using novel tunnelling and light emitting devices, for the first time we reveal the full subbands structure by studying resonance features in the tunnelling current, photoabsorption and light emission. In the future, these systems will allow development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer films of van der Waals materials.
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Submitted 31 October, 2019; v1 submitted 9 October, 2019;
originally announced October 2019.
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Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures
Authors:
Daniel J. Terry,
Viktor Zólyomi,
Matthew Hamer,
Anastasia V. Tyurnina,
David G. Hopkinson,
Alexander M. Rakowski,
Samuel J. Magorrian,
Nick Clark,
Yuri M. Andreev,
Olga Kazakova,
Konstantin Novoselov,
Sarah J. Haigh,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band…
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Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band gap in 2D crystals of InSe more than doubles in the monolayer compared to thick multilayer crystals, while the high mobility of conduction band electrons is promoted by their light in-plane mass. Here, we use Raman and PL measurements of encapsulated few layer samples, coupled with accurate atomic force and transmission electron microscope structural characterisation to reveal new optical properties of atomically thin GaSe preserved by hBN encapsulation. The band gaps we observe complement the spectral range provided by InSe films, so that optical activity of these two almost lattice-matched PTMC films and their heterostructures densely cover the spectrum of photons from violet to infrared. We demonstrate the realisation of the latter by the first observation of interlayer excitonic photoluminescence in few-layer InSe-GaSe heterostructures. The spatially indirect transition is direct in k-space and therefore is bright, while its energy can be tuned in a broad range by the number of layers.
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Submitted 3 October, 2018;
originally announced October 2018.
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Hybrid $\mathbf{k\cdot p}$-tight-binding model for intersubband optics in atomically thin InSe films
Authors:
Samuel J. Magorrian,
Adrian Ceferino,
Viktor Zólyomi,
Vladimir I. Fal'ko
Abstract:
We propose atomic films of n-doped $γ$-InSe as a platform for intersubband optics in the infrared (IR) and far infrared (FIR) range, coupled to out-of-plane polarized light. Depending on the film thickness (number of layers) of the InSe film these transitions span from $\sim 0.7$ eV for bilayer to $\sim 0.05$ eV for 15-layer InSe. We use a hybrid $\mathbf{k} \cdot \mathbf{p}$ theory and tight-bind…
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We propose atomic films of n-doped $γ$-InSe as a platform for intersubband optics in the infrared (IR) and far infrared (FIR) range, coupled to out-of-plane polarized light. Depending on the film thickness (number of layers) of the InSe film these transitions span from $\sim 0.7$ eV for bilayer to $\sim 0.05$ eV for 15-layer InSe. We use a hybrid $\mathbf{k} \cdot \mathbf{p}$ theory and tight-binding model, fully parametrized using density functional theory, to predict their oscillator strengths and thermal linewidths at room temperature.
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Submitted 12 April, 2018; v1 submitted 22 January, 2018;
originally announced January 2018.
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Spin-orbit coupling, optical transitions, and spin pum** in mono- and few-layer InSe
Authors:
S. J. Magorrian,
V. Zólyomi,
V. I. Fal'ko
Abstract:
We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic SOC in both In and Se, can be viewed as a transition between two dominantly $s$- and $p_z$-orbital based bands, accompanied by an electron spin-flip. Having par…
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We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic SOC in both In and Se, can be viewed as a transition between two dominantly $s$- and $p_z$-orbital based bands, accompanied by an electron spin-flip. Having parametrized $\mathbf{k\cdot p}$ theory using first principles density functional theory we estimate the absorption for $σ^{\pm}$ circularly polarized photons in the monolayer as $\sim 1.5\%$, which saturates to $\sim 0.3\%$ in thicker films ($3-5$ layers). Circularly polarized light can be used to selectively excite electrons into spin-polarized states in the conduction band, which permits optical pum** of the spin polarization of In nuclei through the hyperfine interaction.
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Submitted 9 November, 2017;
originally announced November 2017.
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Electronic and optical properties of two-dimensional InSe from a DFT-parameterized tight-binding model
Authors:
S. J. Magorrian,
V. Zólyomi,
V. I. Fal'ko
Abstract:
We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono- and bilayer InSe. For the valence and c…
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We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono- and bilayer InSe. For the valence and conduction band edges of few-layer InSe, which appear to be in the vicinity of the $Γ$ point, we calculate the absorption coefficient for the principal optical transitions as a function of the number of layers, $N$. We find a strong dependence on $N$ of the principal optical transition energies, selection rules, and optical oscillation strengths, in agreement with recent observations \cite{Bandurin2016}. Also, we find that the conduction band electrons are relatively light ($m \propto 0.14-0.18 m_e$), in contrast to an almost flat, and slightly inverted, dispersion of valence band holes near the $Γ$-point, which is found for up to $N \propto 6$.
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Submitted 2 December, 2016; v1 submitted 1 November, 2016;
originally announced November 2016.
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Polarization memory in the nonpolar magnetic ground state of multiferroic CuFeO2
Authors:
J. Beilsten-Edmands,
S. J. Magorrian,
F. R. Foronda,
D. Prabhakaran,
P. G. Radaelli,
R. D. Johnson
Abstract:
We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically-induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase, we find that the nonpolar collinear antiferromagnetic ground state at B = 0 T retains a strong memory of the polarization magnitude and direction, such that up…
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We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically-induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase, we find that the nonpolar collinear antiferromagnetic ground state at B = 0 T retains a strong memory of the polarization magnitude and direction, such that upon re-entering the ferroelectric phase a net polarization of comparable magnitude to the initial polarization is recovered in the absence of external bias. This memory effect is very robust: in pulsed-magnetic-field measurements, several pulses into the ferroelectric phase with reverse bias are required to switch the polarization direction, with significant switching only seen after the system is driven out of the ferroelectric phase and ground state either magnetically (by application of B > 13 T) or thermally. The memory effect is also largely insensitive to the magnetoelastic domain composition, since no change in the memory effect is observed for a sample driven into a single-domain state by application of stress in the [1-10] direction. On the basis of Monte Carlo simulations of the ground state spin configurations, we propose that the memory effect is due to the existence of helical domain walls within the nonpolar collinear antiferromagnetic ground state, which would retain the helicity of the polar phase for certain magnetothermal histories.
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Submitted 7 October, 2016;
originally announced October 2016.
