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Stability of the tetragonal phase of BaZrO3 under high pressure
Authors:
Constance Toulouse,
Danila Amoroso,
Robert Oliva,
Cong Xin,
Pierre Bouvier,
Pierre Fertey,
Philippe Veber,
Mario Maglione,
Philippe Ghosez,
Jens Kreisel,
Mael Guennou
Abstract:
In this paper, we revisit the high-pressure behavior of BaZrO3 by a combination of first-principle calculations, Raman spectroscopy, and x-ray diffraction under high pressure. We confirm experimentally the cubic-to-tetragonal transition at 10 GPa and find no evidence for any other phase transition up to 45 GPa, the highest pressures investigated, at variance with past reports. We re-investigate ph…
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In this paper, we revisit the high-pressure behavior of BaZrO3 by a combination of first-principle calculations, Raman spectroscopy, and x-ray diffraction under high pressure. We confirm experimentally the cubic-to-tetragonal transition at 10 GPa and find no evidence for any other phase transition up to 45 GPa, the highest pressures investigated, at variance with past reports. We re-investigate phase stability with density functional theory considering not only the known tetragonal (I4/mcm) phase but also other potential antiferrodistortive candidates. This shows that the tetragonal phase becomes progressively more stable upon increasing pressure as compared to phases with more complex tilt systems. The possibility for a second transition to another tilted phase at higher pressures, and in particular to the very common orthorhombic Pnma structure, is therefore ruled out.
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Submitted 16 August, 2022; v1 submitted 13 May, 2022;
originally announced May 2022.
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Lattice dynamics and Raman spectrum of BaZrO3 single crystals
Authors:
Constance Toulouse,
Danila Amoroso,
Cong Xin,
Philippe Veber,
Monica Ciomaga Hatnean,
Geetha Balakrishnan,
Mario Maglione,
Philippe Ghosez,
Jens Kreisel,
Mael Guennou
Abstract:
BaZrO3 is a perovskite that remains in the simple cubic phase at all temperatures, hence with no first-order Raman-active phonon mode allowed by symmetry. Yet, it exhibits an intense Raman spectrum with sharp and well-defined features. Here, we report the evolution of the Raman spectrum of BaZrO3 single crystals in a broad temperature range (4--1200~K) and discuss its origin with the support of de…
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BaZrO3 is a perovskite that remains in the simple cubic phase at all temperatures, hence with no first-order Raman-active phonon mode allowed by symmetry. Yet, it exhibits an intense Raman spectrum with sharp and well-defined features. Here, we report the evolution of the Raman spectrum of BaZrO3 single crystals in a broad temperature range (4--1200~K) and discuss its origin with the support of detailed first-principle calculations of the lattice dynamics. Phonon calculations are performed not only for the cubic phase of BaZrO3, but also for the low-symmetry phases with octahedra tilts that have been suspected to exist at the nanoscale. We show that the Raman spectrum shows no direct evidence for these nanodomains, but can instead be explained by classical second-order Raman scattering. We provide an assignment of the dominant features to phonon modes combinations. In particular, we show that the high frequency range of the spectrum is dominated by overtones and shows an image of the phonon density of states corresponding to the stretching modes of the oxygen octahedra.
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Submitted 3 July, 2019;
originally announced July 2019.
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Persistent type-II multiferroicity in nanostructured MnWO4 ceramics
Authors:
Pascaline Patureau,
Remi Dessapt,
Philippe Deniard,
U-Chan Chung,
Dominique Michaub,
Michael Josse,
Christophe Payen,
Mario Maglione
Abstract:
We show that the type-II multiferroic properties of bulk MnWO4 are kept in nanostructured ceramics of 50 nm grain size prepared via spark plasma sintering (SPS). This means that ferroelectric polarization is robust against downsizing, which is at variance with standard ferroelectrics like BaTiO3. We ascribe this stability to the spin-driven nature of the ferroe-lectric correlations in type-II mult…
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We show that the type-II multiferroic properties of bulk MnWO4 are kept in nanostructured ceramics of 50 nm grain size prepared via spark plasma sintering (SPS). This means that ferroelectric polarization is robust against downsizing, which is at variance with standard ferroelectrics like BaTiO3. We ascribe this stability to the spin-driven nature of the ferroe-lectric correlations in type-II multiferroics while it is resulting from lattice distortion in other cases. This may open the way for persistent type-II multiferroicity with no need for external stabilization like substrate-generated strain.
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Submitted 5 September, 2018;
originally announced September 2018.
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A Study Concerning the Electronic Conductivity in Eumelanin Thin Films
Authors:
Ludovico Migliaccio,
Paola Manini,
Carla Minarini,
Paolo Tassini,
Maria Grazia Maglione,
Alessandro Pezzella
Abstract:
This work presents conclusive observations about the long lasting topic of eumelanins' electronic vs. ionic conduction, allowing to access unprecedented conductivity of this mammal pigment. Key strengths of the study include, the easy eumelanin thin film fabrication protocol based on solvent free and high vacuum annealing technology; the first achievement of eumelanin conductivity up to 10^2 S/cm,…
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This work presents conclusive observations about the long lasting topic of eumelanins' electronic vs. ionic conduction, allowing to access unprecedented conductivity of this mammal pigment. Key strengths of the study include, the easy eumelanin thin film fabrication protocol based on solvent free and high vacuum annealing technology; the first achievement of eumelanin conductivity up to 10^2 S/cm, an exceptional increase of over nine order of magnitude with respect to commonly recorded values; decisive demonstration of the electronic nature of charge transport in eumelanins. Overall these elements provide the reversal of the long lasting paradigm attributing a key role to water in eumelanin electrical conductivity, opening - thanks to the conductivity level achieved - to a completely new perspective for the eumelanin exploitation in organic electronics and bioelectronics.
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Submitted 21 June, 2018; v1 submitted 18 November, 2017;
originally announced November 2017.
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Drastic changes of electronic structure and crystal chemistry upon oxidation of SnII2TiO4E2 into SnIV2TiO6: an ab initio study
Authors:
Samir F. Matar,
Mario Maglione,
Michel Nakhl,
Charbel Kfoury,
Jean Etourneau
Abstract:
From DFT based calculations establishing energy-volume equations of state and electron localization map**, the electronic structure and crystal chemistry changes from Sn2TiO4 to Sn2TiO6 by oxidation are rationalized; the key effect being the destabilization of divalent tin SnII towards tetravalent state SnIV leading to rutile Sn2TiO6 as experimentally observed. The subsequent electronic structur…
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From DFT based calculations establishing energy-volume equations of state and electron localization map**, the electronic structure and crystal chemistry changes from Sn2TiO4 to Sn2TiO6 by oxidation are rationalized; the key effect being the destabilization of divalent tin SnII towards tetravalent state SnIV leading to rutile Sn2TiO6 as experimentally observed. The subsequent electronic structure change is highlighted in the relative change of the electronic band gap which increases from ~1eV up to 2.2 eV and the 1.5 times increase of the bulk modulus assigned to the change from covalently SnII based compound to the more ionic SnIV one. Such trends are also confronted with the relevant properties of black SnIIO characterized by very small band gap.
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Submitted 14 June, 2016;
originally announced June 2016.
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Intrinsic ionic screening of the ferroelectric polarization of KTP
Authors:
Mario Maglione,
Anand Theerthan,
Vincent Rodriguez,
Alexandra Pena,
Carlota Canalias,
Bertrand Menaert,
Benoit Boulanger
Abstract:
Mobile charges and lattice polarization interact in ferroelectric materials because of the Coulomb interaction between the mobile free charges and the fixed lattice dipoles. We have investigated this mutual screening in KTiOPO4, a ferroelectric/superionic single crystal in which the mobile charges are K+ ions. The ionic accumulation close to the crystal surfaces leads to orders of magnitude increa…
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Mobile charges and lattice polarization interact in ferroelectric materials because of the Coulomb interaction between the mobile free charges and the fixed lattice dipoles. We have investigated this mutual screening in KTiOPO4, a ferroelectric/superionic single crystal in which the mobile charges are K+ ions. The ionic accumulation close to the crystal surfaces leads to orders of magnitude increase of the Second Harmonic Generation. This ionic space charge model is supported by the absence of such an effect in non-ionic conductor but ferroelectric BaTiO3, by its temperature dependence in KTiOPO4 and by its broad depletion at domain walls.
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Submitted 20 March, 2015;
originally announced March 2015.
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Magnetic field tuning of polaron losses in Fe doped BaTiO3 single crystals
Authors:
R. Anand Theerthan,
Alla Artemenko,
Mario Maglione
Abstract:
Artificial tuning of dielectric parameters can result from interface conductivity in polycrystalline materials. In ferroelectric single crystals, it was already shown that ferroelectric domain walls can be the source of such artificial coupling. We show here that low temperature dielectric losses can be tuned by a dc magnetic field. Since such losses were previously ascribed to polaron relaxation…
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Artificial tuning of dielectric parameters can result from interface conductivity in polycrystalline materials. In ferroelectric single crystals, it was already shown that ferroelectric domain walls can be the source of such artificial coupling. We show here that low temperature dielectric losses can be tuned by a dc magnetic field. Since such losses were previously ascribed to polaron relaxation we suggest this results from the interaction of hop** polarons with the magnetic field. The fact that this losses alteration has no counterpart on the real part of the dielectric permittivity confirms that no interface is to be involved in this purely dynamical effect. The contribution of mobile charges hop** among Fe related centers was confirmed by ESR spectroscopy showing maximum intensity at ca T\sim40 K.
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Submitted 6 July, 2012;
originally announced July 2012.
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Polaron relaxation in ferroelectric thin films
Authors:
E. Arveux,
D. Levasseur,
A. Rousseau,
S. Payan,
M. Maglione,
G. Guegan
Abstract:
We report a dielectric relaxation in ferroelectric thin films of the ABO3 family. We have compared films of different compositions with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperature (T<100K) for frequencies from 100Hz up to 10MHz. This relaxation activation energy is always lower than 200meV. It is very similar to th…
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We report a dielectric relaxation in ferroelectric thin films of the ABO3 family. We have compared films of different compositions with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperature (T<100K) for frequencies from 100Hz up to 10MHz. This relaxation activation energy is always lower than 200meV. It is very similar to the polaron relaxation that we reported in the parent bulk perovskites. Being independent of the materials size, morphology and texture, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific sha**
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Submitted 10 January, 2012;
originally announced January 2012.
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High-frequency dielectric spectroscopy of batio3 core - silica shell nanocomposites: Problem of interdiffusion
Authors:
D. Nuzhnyy,
J. Petzelt,
V. Bovtun,
M. Kempa,
M. Savinov,
C. Elissalde,
U-C. Chung,
D. Michau,
M. Maglione,
C. Estournes
Abstract:
Three types of BaTiO3 core - amorphous nano-shell composite ceramics were processed from the same core-shell powder by standard sintering, spark-plasma sintering and two-step sintering techniques and characterized by XRD, HRSEM and broad-band dielectric spectroscopy in the frequency range 10^3 - 10^13 Hz including the THz and IR range. The samples differed by porosity and by the amount of interdif…
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Three types of BaTiO3 core - amorphous nano-shell composite ceramics were processed from the same core-shell powder by standard sintering, spark-plasma sintering and two-step sintering techniques and characterized by XRD, HRSEM and broad-band dielectric spectroscopy in the frequency range 10^3 - 10^13 Hz including the THz and IR range. The samples differed by porosity and by the amount of interdiffusion from the cores to shells, in correlation with their increasing porosity. The dielectric spectra were also calculated using suitable models based on effective medium approximation. The measurements revealed a strong dielectric dispersion below the THz range, which cannot be explained by the modeling, and whose strength was in correlation with the degree of interdiffusion. We assigned it to an effect of the interdiffusion layers, giving rise to a strong interfacial polarization. It appears that the high-frequency dielectric spectroscopy is an extremely sensitive tool for detection of any gradient layers and sample inhomogeneities even in dielectric materials with negligible conductivity.
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Submitted 16 November, 2011;
originally announced November 2011.
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Effect of nonmagnetic substituents Mg and Zn on the phase competition in the multiferroic antiferromagnet MnWO4
Authors:
Lynda Meddar,
Michael Josse,
Philippe Deniard,
Carole La,
Gilles André,
Françoise Damay,
Vaclav Petricek,
Stéphane Jobic,
Myung-Hwan Whangbo,
Mario Maglione,
Christophe Payen
Abstract:
The effects of substituting nonmagnetic Mg2+ and Zn2+ ions for the Mn2+ (S = 5/2) ions on the structural, magnetic and dielectric properties of the multiferroic frustrated antiferromagnet MnWO4 were investigated. Polycrystalline samples of Mn1-xMgxWO4 and Mn1-xZnxWO4 (0<x<0.3) solid solutions were prepared by a solid-state route and characterized via X-ray and neutron diffraction, magnetization, a…
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The effects of substituting nonmagnetic Mg2+ and Zn2+ ions for the Mn2+ (S = 5/2) ions on the structural, magnetic and dielectric properties of the multiferroic frustrated antiferromagnet MnWO4 were investigated. Polycrystalline samples of Mn1-xMgxWO4 and Mn1-xZnxWO4 (0<x<0.3) solid solutions were prepared by a solid-state route and characterized via X-ray and neutron diffraction, magnetization, and dielectric permittivity measurements. Mg and Zn substitutions give rise to very similar effects. The Neel temperature TN, the AF3-to-AF2 magnetic phase transition temperature T2, and the critical ferroelectric temperature Tc = T2 of MnWO4 are reduced upon the nonmagnetic do**. At the lowest temperature (T = 1.5 K), the incommensurate magnetic structure for x(Mg) = 0.15 and x(Zn) = 0.15 corresponds to either a sinusoidal spin arrangement or an elliptical spin-spiral phase similar to the polar AF2 structure observed in MnWO4. These findings were discussed by considering the effects of the Mg and Zn substitutions on the crystal lattice and on the spin exchange network of MnWO4.
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Submitted 1 December, 2010;
originally announced December 2010.
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Laser Induced Periodic Surface Crystalline Patterns on SrO-0.5Li2O-4.5B2O3 and BaO-0.5Na2O-4.5B2O3 Glasses and Optical Second Harmonic Generation
Authors:
Rahul Vaish,
Vincent Rodriguez,
Mario Maglione,
J. Etourneau,
K. B. R. Varma
Abstract:
Transparent SrO-0.5Li2O-4.5B2O3 (SLBO) and BaO-0.5Na2O-4.5B2O3 (BNBO) glasses were fabricated via the conventional melt-quenching technique. The amorphous and glassy characteristics of the as-quenched samples were respectively confirmed by X-ray powder diffraction (XRD) and Differential Thermal Analysis (DTA) studies. Optically clear SLBO and BNBO glass nano/microcrystal composites were obtained b…
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Transparent SrO-0.5Li2O-4.5B2O3 (SLBO) and BaO-0.5Na2O-4.5B2O3 (BNBO) glasses were fabricated via the conventional melt-quenching technique. The amorphous and glassy characteristics of the as-quenched samples were respectively confirmed by X-ray powder diffraction (XRD) and Differential Thermal Analysis (DTA) studies. Optically clear SLBO and BNBO glass nano/microcrystal composites were obtained by heat-treating the as-quenched glasses slightly above their respective glass transition temperatures. These glass nano/microcrystal composites exhibited second harmonic signals in transmission mode when exposed to infrared laser beam at λ=1064 nm. Interestingly second-harmonic waves were found to undergo optical diffraction and was attributed to the presence of self-organized microcrystalline patterns associated with 0.5-2μm periodicities.
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Submitted 12 July, 2010;
originally announced July 2010.
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Polarons, free charge localisation and effective dielectric permittivity in oxides
Authors:
Mario Maglione
Abstract:
This review will deal with several types of free charge localisation in oxides and their consequences on the effective dielectric spectra of such materials. The first one is the polaronic localisation at the unit cell scale on residual impurities in ferroelectric networks. The second one is the collective localisation of free charge at macroscopic interfaces like surfaces, electrodes and grain bou…
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This review will deal with several types of free charge localisation in oxides and their consequences on the effective dielectric spectra of such materials. The first one is the polaronic localisation at the unit cell scale on residual impurities in ferroelectric networks. The second one is the collective localisation of free charge at macroscopic interfaces like surfaces, electrodes and grain boundaries in ceramics. Polarons have been observed in many oxide perovskites mostly when cations having several stable electronic configurations are present. In manganites, the density of such polarons is so high as to drive a net lattice of interacting polarons. On the other hand, in ferroelectric materials like BaTiO3 and LiNbO3, the density of polarons is usually very small but they can influence strongly the macroscopic conductivity. The contribution of such polarons to the dielectric spectra of ferroelectric materials is described. Even residual impurities as for example Iron can induce well defined anomalies at very low temperatures. This is mostly resulting from the interaction between localised polarons and the highly polarisable ferroelectric network in which they are embedded. The case of such residual polarons in SrTiO3 will be described in more details, emphasizing the quantum polaron state at liquid helium temperatures. Recently, several non-ferroelectric oxides have been shown to display giant effective dielectric permittivity. It is first shown that the frequency/temperature behaviour of such parameters is very similar in very different compounds (donor doped BaTiO3, CaCu3Ti4O12, LuFe2O4,Li doped NiO,...). This similarity calls for a common origin of the giant dielectric permittivity in these compounds. A space charge localisation at macroscopic interfaces can be the key for such extremely high dielectric permittivity.
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Submitted 18 June, 2010;
originally announced June 2010.
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Dielectric and polarization experiments in high loss dielectrics: a word of caution
Authors:
Mario Maglione,
M. A. Subramanian
Abstract:
The recent quest for improved functional materials like high permittivity dielectrics and/or multiferroics has triggered an intense wave of research. Many materials have been checked for their dielectric permittivity or their polarization state. In this report, we call for caution when samples are simultaneously displaying insulating behavior and defect-related conductivity. Many oxides containi…
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The recent quest for improved functional materials like high permittivity dielectrics and/or multiferroics has triggered an intense wave of research. Many materials have been checked for their dielectric permittivity or their polarization state. In this report, we call for caution when samples are simultaneously displaying insulating behavior and defect-related conductivity. Many oxides containing mixed valent cations or oxygen vacancies fall in this category. In such cases, most of standard experiments may result in effective high dielectric permittivity which cannot be related to ferroelectric polarization. Here we list few examples of possible discrepancies between measured parameters and their expected microscopic origin.
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Submitted 28 May, 2008;
originally announced May 2008.
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Interface-driven magnetocapacitance in a broad range of materials
Authors:
Mario Maglione
Abstract:
Triggered by the revival of multiferroic materials, a lot of effort is presently undergoing as to find a coupling between a capacitance and a magnetic field. We show in this report that interfaces are the right way of increasing such a coupling provided free charges are localized on these two-dimensional defects. Starting from commercial diodes at room temperature and going to grain boundaries i…
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Triggered by the revival of multiferroic materials, a lot of effort is presently undergoing as to find a coupling between a capacitance and a magnetic field. We show in this report that interfaces are the right way of increasing such a coupling provided free charges are localized on these two-dimensional defects. Starting from commercial diodes at room temperature and going to grain boundaries in giant permittivity materials and to ferroelectric domain walls, a clear magnetocapacitance is reported which is all the time more than a few percent for a magnetic field of 90kOe. The only tuning parameter for such strong coupling to arise is the dielectric relaxation time which is reached on tuning the operating frequency and the temperature in many different materials.
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Submitted 15 April, 2008;
originally announced April 2008.
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The Ba2LnFeNb4O15 Tetragonal Tungsten Bronze: towards RT composite multiferroics
Authors:
M. Josse,
O. Bidault,
F. Roulland,
E. Castel,
A. Simon,
D. Michau,
R. Von der Muhll,
O. Nguyen,
M. Maglione
Abstract:
Several Niobium oxides of formula Ba2LnFeNb4O15 (Ln = La, Pr, Nd, Sm, Eu, Gd) with the Tetragonal Tungsten Bronze (TTB) structure have been synthesised by conventional solid-state methods. The Neodymium, Samarium and Europium compounds are ferroelectric with Curie temperature ranging from 320 to 440K. The Praseodymium and Gadolinium compounds behave as relaxors below 170 and 300 K respectively.…
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Several Niobium oxides of formula Ba2LnFeNb4O15 (Ln = La, Pr, Nd, Sm, Eu, Gd) with the Tetragonal Tungsten Bronze (TTB) structure have been synthesised by conventional solid-state methods. The Neodymium, Samarium and Europium compounds are ferroelectric with Curie temperature ranging from 320 to 440K. The Praseodymium and Gadolinium compounds behave as relaxors below 170 and 300 K respectively. The Praseodymium, Neodymium, Samarium, Europium and Gadolinium compounds exhibit magnetic hysteresis loops at room temperature originating from traces of a barium ferrite secondary phase. The presence of both ferroelectric and magnetic hysteresis loops at room temperature allows considering these materials as composites multiferroic. Based on crystal-chemical analysis we propose some relationships between the introduction of Ln3+ ions in the TTB framework and the chemical, structural and physical properties of these materials.
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Submitted 26 June, 2008; v1 submitted 20 July, 2007;
originally announced July 2007.
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Resistive hystersis effects in perovskite oxide-based heterostructure junctions
Authors:
M. P. Singh,
L. Mechin,
W. Prellier,
M. Maglione
Abstract:
In this paper, we report the electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and, BaTiO3 (BTO) as a ferroelectric layer. Junction based devices, having the dimensions of 400 x 200 micom2, have been fabricated upon LCMO/BTO/LCMO heterostructures by…
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In this paper, we report the electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and, BaTiO3 (BTO) as a ferroelectric layer. Junction based devices, having the dimensions of 400 x 200 micom2, have been fabricated upon LCMO/BTO/LCMO heterostructures by photolithography and Ar-ion milling technique. The DC current-voltage (I-V) characteristics of the MFM junctions were carried out. At 300 K, the devices showed the linear (I-V) characteristics, whereas at 77 K, (I-V) curves exhibited some reproducible switching behaviours with well-defined remnant currents. The resulting resistance modulation is very different from what was already reported in ultrathin ferroelectric layers displaying resistive switching. A model is presented to explain the datas
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Submitted 6 October, 2006;
originally announced October 2006.
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EXAFS study of lead-free relaxor ferroelectric BaTi(1-x)Zr(x)O3 at the Zr K-edge
Authors:
C. Laulhe,
F. Hippert,
J. Kreisel,
M. Maglione,
A. Simon,
J. L. Hazemann,
V. Nassif
Abstract:
Extended X-ray absorption fine structure (EXAFS) experiments at the Zr K-edge were carried out on perovskite relaxor ferroelectrics BaTi(1-x)Zr(x)O3 (BTZ) (x = 0.25, 0.30, 0.35), and on BaZrO3 for comparison. Structural information up to 4.5 A around the Zr atoms is obtained, revealing that the local structure differs notably from the average Pm-3m cubic structure deduced from X-ray diffraction.…
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Extended X-ray absorption fine structure (EXAFS) experiments at the Zr K-edge were carried out on perovskite relaxor ferroelectrics BaTi(1-x)Zr(x)O3 (BTZ) (x = 0.25, 0.30, 0.35), and on BaZrO3 for comparison. Structural information up to 4.5 A around the Zr atoms is obtained, revealing that the local structure differs notably from the average Pm-3m cubic structure deduced from X-ray diffraction. In particular, our results show that the distance between Zr atoms and their first oxygen neighbors is independent of the Zr substitution rate x and equal to that measured in BaZrO3, while the X-ray cubic cell parameter increases linearly with x. Furthermore, we show that the Zr atoms tend to segregate in Zr-rich regions. We propose that the relaxor behavior in BTZ is linked to random elastic fields generated by this particular chemical arrangement, rather than to random electric fields as is the case in most relaxors.
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Submitted 6 February, 2006;
originally announced February 2006.
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First evidence of a strong Magneto-capacitance coupling at room temperature in integrated piezoelectric resonators
Authors:
M. Maglione,
W Zhu,
Z. H. Wang
Abstract:
In the vicinity of their resonance frequency, piezoelectric resonators are highly sensitive to small perturbations. The present report is focussed on the magnetic field as a perturbation source. First, magneto-dielectric modulation of more than 10% is achieved at room temperature on both ferroelectric single crystals and quartz discs. Since such piezoelectric resonators are now available as memb…
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In the vicinity of their resonance frequency, piezoelectric resonators are highly sensitive to small perturbations. The present report is focussed on the magnetic field as a perturbation source. First, magneto-dielectric modulation of more than 10% is achieved at room temperature on both ferroelectric single crystals and quartz discs. Since such piezoelectric resonators are now available as membranes directly integrated on Silicon wafer, we have checked the magneto-dielectric modulation in such resonators. We show here for the first time that a moderate magnetic field of 2.104 Oersteds is able to efficiently tune the impedance of these resonators in their resonance window.
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Submitted 10 November, 2004;
originally announced November 2004.
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High quality MgB2 thin films in-situ grown by dc magnetron sputtering
Authors:
R. Vaglio,
M. G. Maglione,
R. Di Capua
Abstract:
Thin films of the recently discovered magnesium diboride (MgB2) intermetalic superconducting compound have been grown using a magnetron sputtering deposition technique followed by in-situ annealing at 830 C. High quality films were obtained on both sapphire and MgO substrates. The best films showed maximum Tc = 35 K (onset), a transition width of 0.5 K, a residual resistivity ratio up to 1.6, a…
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Thin films of the recently discovered magnesium diboride (MgB2) intermetalic superconducting compound have been grown using a magnetron sputtering deposition technique followed by in-situ annealing at 830 C. High quality films were obtained on both sapphire and MgO substrates. The best films showed maximum Tc = 35 K (onset), a transition width of 0.5 K, a residual resistivity ratio up to 1.6, a low temperature critical current density Jc > 1 MA/cm2 and anisotropic critical field with gamma = 2.5 close to the values obtained for single crystals. The preparation technique can be easily scaled to produce large area in-situ films.
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Submitted 15 March, 2002;
originally announced March 2002.
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Study of the microwave electrodynamic response of MgB2 thin films
Authors:
A. Andreone,
A. Cassinese,
C. Cantoni,
E. Di Gennaro,
G. Lamura,
M. G. Maglione,
M. Paranthaman,
M. Salluzzo,
R. Vaglio
Abstract:
We present a study on the power dependence of the microwave surface impedance in thin films of the novel superconductor MgB2. 500 nm thick samples exhibiting critical temperatures ranging between 26 and 38 K are synthesized by an ex-situ post-anneal of e-beam evaporated boron in the presence of an Mg vapor at 900 C. Preliminary results on films grown in situ by a high rate magnetron sputtering t…
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We present a study on the power dependence of the microwave surface impedance in thin films of the novel superconductor MgB2. 500 nm thick samples exhibiting critical temperatures ranging between 26 and 38 K are synthesized by an ex-situ post-anneal of e-beam evaporated boron in the presence of an Mg vapor at 900 C. Preliminary results on films grown in situ by a high rate magnetron sputtering technique from stoichiometric MgB2 and Mg targets are also reported. Microwave measurements have been carried out employing a dielectrically loaded niobium superconducting cavity operating at 19.8 GHz and 4 K. The study shows that the electrodynamic response of MgB2 films is presently dominated by extrinsic sources of dissipation, appearing already at low microwave power, likely to be ascribed to the presence of grain boundaries and normal inclusions in the samples.
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Submitted 27 September, 2001; v1 submitted 25 September, 2001;
originally announced September 2001.
