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Experimental observation of metallic states with different dimensionality in a quasi-1D charge density wave compound
Authors:
P. Rezende-Gonçalves,
M. Thees,
J. Rojas Castillo,
D. Silvera-Vega,
R. L. Bouwmeester,
E. David,
A. Antezak,
A. J. Thakur,
F. Fortuna,
P. Le Fèvre,
M. Rosmus,
N. Olszowska,
R. Magalhães-Paniago,
A. C. Garcia-Castro,
P. Giraldo-Gallo,
E. Frantzeskakis,
A. F. Santander-Syro
Abstract:
TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have r…
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TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have reported metallic behavior with a resistivity plateau at temperatures lower than 10 K. In this paper, we study the electronic structure of TaTe$_4$ using a combination of high-resolution angle-resolved photoemission spectroscopy and density functional calculations. Our results reveal the existence of the long-sought metallic states. These states exhibit mixed dimensionality, while some of them might have potential topological properties.
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Submitted 28 April, 2023;
originally announced May 2023.
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Direct detection of induced magnetic moment and efficient spin-to-charge conversion in graphene/ferromagnetic structures
Authors:
J. B. S. Mendes,
O. Alves Santos,
T. Chagas,
R. Magalhães-Paniago,
T. J. A. Mori,
J. Holanda,
L. M. Meireles,
R. G. Lacerda,
A. Azevedo,
S. M. Rezende
Abstract:
This article shows that the spin-to-charge current conversion in single-layer graphene (SLG) by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the integration of this remarkable 2D-material with the unique ferrimagnetic insulator yttrium iron garnet (YIG = $Y_{3}Fe_{5}O_{12}$) as well as with the ferromagnetic metal permalloy (Py = $Ni_{81}Sb_{19}$). By means of X-ray ab…
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This article shows that the spin-to-charge current conversion in single-layer graphene (SLG) by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the integration of this remarkable 2D-material with the unique ferrimagnetic insulator yttrium iron garnet (YIG = $Y_{3}Fe_{5}O_{12}$) as well as with the ferromagnetic metal permalloy (Py = $Ni_{81}Sb_{19}$). By means of X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (XMCD) techniques, we show that the carbon atoms of the SLG acquires an induced magnetic moment due to the proximity effect with the magnetic layer. The spin currents are generated in the magnetic layer by spin pum** from microwave driven ferromagnetic resonance and are detected by a dc voltage along the graphene layer, at room temperature. The spin-to-charge current conversion, occurring at the graphene layer, is explained by the extrinsic spin-orbit interaction (SOI) induced by the proximity effect with the ferromagnetic layer. The results obtained for the SLG/YIG and SLG/Py systems confirm very similar values for the IREE parameter, which are larger than the values reported in previous studies for SLG. We also report systematic investigations of the electronic and magnetic properties of the SLG/YIG by means of scanning tunneling microscopy (STM).
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Submitted 2 December, 2018;
originally announced December 2018.
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Structural analysis of polycrystalline graphene systems by Raman spectroscopy
Authors:
J. Ribeiro-Soares,
M. E. Oliveros,
C. Garin,
M. V. David,
L. G. P. Martins,
C. A. Almeida,
E. H. Martins-Ferreira,
K. Takai,
T. Enoki,
R. Magalhães-Paniago,
A. Malachias,
A. Jorio,
B. S. Archanjo,
C. A. Achete,
L. G. Cançado
Abstract:
A theoretical model supported by experimental results explains the dependence of the Raman scattering signal on the evolution of structural parameters along the amorphization trajectory of polycrystalline graphene systems. Four parameters rule the scattering efficiencies, two structural and two related to the scattering dynamics. With the crystallite sizes previously defined from X-ray diffraction…
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A theoretical model supported by experimental results explains the dependence of the Raman scattering signal on the evolution of structural parameters along the amorphization trajectory of polycrystalline graphene systems. Four parameters rule the scattering efficiencies, two structural and two related to the scattering dynamics. With the crystallite sizes previously defined from X-ray diffraction and microscopy experiments, the three other parameters (the average grain boundaries width, the phonon coherence length, and the electron coherence length) are extracted from the Raman data with the geometrical model proposed here. The broadly used intensity ratio between the C-C stretching (G band) and the defect-induced (D band) modes can be used to measure crystallite sizes only for samples with sizes larger than the phonon coherence length, which is found equal to 32 nm. The Raman linewidth of the G band is ideal to characterize the crystallite sizes below the phonon coherence length, down to the average grain boundaries width, which is found to be 2.8 nm. "Ready-to-use" equations to determine the crystallite dimensions based on Raman spectroscopy data are given.
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Submitted 20 November, 2015;
originally announced November 2015.
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Domain wall formation and spin reorientation in finite-size magnetic systems
Authors:
Rafael M. Fernandes,
Harry Westfahl Jr.,
Rogério Magalhães-Paniago,
Leticia N. Coelho
Abstract:
We investigate the formation of stable one-dimensional Néel walls in a ferromagnetic slab with finite thickness and finite width. Taking into account the dipolar, the exchange and the uniaxial anisotropic crystalline field interactions, we derive an approximative analytical self-consistent expression that gives the wall width in terms of ratios between the three different energy scales of the pr…
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We investigate the formation of stable one-dimensional Néel walls in a ferromagnetic slab with finite thickness and finite width. Taking into account the dipolar, the exchange and the uniaxial anisotropic crystalline field interactions, we derive an approximative analytical self-consistent expression that gives the wall width in terms of ratios between the three different energy scales of the problem. We also show that, even when the crystalline anisotropy does not favour the formation of domain walls, they can yet be formed due to the dipolar interaction and the finiteness of the system. Moreover, using a Stoner-Wohlfarth approach, we study the magnetization reorientation inside the domains under the action of an external magnetic field and obtain the respective hysteresis loops, showing that their shapes change from squared to inclined as the width of the slab varies. Finally, we discuss possible applications of this model to describe qualitatively some recent experimental data on thin films of MnAs grown over GaAs substrates.
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Submitted 31 March, 2009; v1 submitted 15 May, 2006;
originally announced May 2006.
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Magnetic reconfiguration of MnAs/GaAs(001) observed by Magnetic Force Microscopy and Resonant Soft X-ray Scattering
Authors:
L. N. Coelho,
R. Magalhães-Paniago,
B. R. A. Neves,
F. C. Vicentin,
H. Westfahl Jr.,
R. M. Fernandes,
F. Iikawa,
L. Däweritz,
C. Spezzani,
M. Sacchi
Abstract:
We investigated the thermal evolution of the magnetic properties of MnAs epitaxial films grown on GaAs(001) during the coexistence of hexagonal/orthorhombic phases using polarized resonant (magnetic) soft X-ray scattering and magnetic force microscopy. The results of the diffuse satellite X-ray peaks were compared to those obtained by magnetic force microscopy and suggest a reorientation of ferr…
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We investigated the thermal evolution of the magnetic properties of MnAs epitaxial films grown on GaAs(001) during the coexistence of hexagonal/orthorhombic phases using polarized resonant (magnetic) soft X-ray scattering and magnetic force microscopy. The results of the diffuse satellite X-ray peaks were compared to those obtained by magnetic force microscopy and suggest a reorientation of ferromagnetic terraces as temperature rises. By measuring hysteresis loops at these peaks we show that this reorientation is common to all ferromagnetic terraces. The reorientation is explained by a simple model based on the shape anisotropy energy. Demagnetizing factors were calculated for different configurations suggested by the magnetic images. We noted that the magnetic moments flip from an in-plane mono-domain orientation at lower temperatures to a three-domain out-of-plane configuration at higher temperatures. The transition was observed when the ferromagnetic stripe width L is equal to 2.9 times the film thickness d. This is in good agreement with the expected theoretical value of L = 2.6d.
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Submitted 15 May, 2006;
originally announced May 2006.
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Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering
Authors:
A. Malachias,
T. U. Schulli,
G. Medeiros-Ribeiro,
M. Stoffel,
O. G. Schmidt,
T. H. Metzger,
R. Magalhaes-Paniago
Abstract:
X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limite…
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X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limited region of the islands where the stoichiometry is close to Si0.5Ge0.5.
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Submitted 25 November, 2004;
originally announced November 2004.
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X-ray method to study temperature-dependent stripe domains in MnAs/GaAs(001)
Authors:
R. Magalhaes-Paniago,
L. N. Coelho,
B. R. A. Neves,
H. Westfahl Jr.,
F. Iikawa,
L. Daweritz,
C. Spezzani,
M. Sacchi
Abstract:
MnAs films grown on GaAs (001) exhibit a progressive transition between hexagonal (ferromagnetic) and orthorhombic (paramagnetic) phases at wide temperature range instead of abrupt transition during the first-order phase transition. The coexistence of two phases is favored by the anisotropic strain arising from the constraint on the MnAs films imposed by the substrate. This phase coexistence occ…
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MnAs films grown on GaAs (001) exhibit a progressive transition between hexagonal (ferromagnetic) and orthorhombic (paramagnetic) phases at wide temperature range instead of abrupt transition during the first-order phase transition. The coexistence of two phases is favored by the anisotropic strain arising from the constraint on the MnAs films imposed by the substrate. This phase coexistence occurs in ordered arrangement alternating periodic terrace steps. We present here a method to study the surface morphology throughout this transition by means of specular and diffuse scattering of soft x-rays, tuning the photon energy at the Mn 2p resonance. The results show the long-range arrangement of the periodic stripe-like structure during the phase coexistence and its period remains constant, in agreement with previous results using other techniques.
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Submitted 22 September, 2004;
originally announced September 2004.
