Showing 1–9 of 9 results for author: Madauß, L

Gas dependent hysteresis in MoS$_2$ field effect transistors

Authors: F. Urban, F. Giubileo, A. Grillo, L. Iemmo, G. Luongo, M. Passacantando, T. Foller, L. Madauß, E. Pollmann, M. P. Geller, D. Oing, M. Schleberger, A. Di Bartolomeo

Abstract: We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although… ▽ More We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices. △ Less

Submitted 27 June, 2023; originally announced June 2023.

Comments: 8 pages, 5 figures

Journal ref: 2019 2D Materials 6 045049

Velocity distributions of particles sputtered from supported 2D-MoS$_2$ during highly charged ion irradiation

Authors: Lucia Skopinski, Silvan Kretschmer, Philipp Ernst, Matthias Herder, Lukas Madauß, Lars Breuer, Arkady V. Krasheninnikov, Marika Schleberger

Abstract: The interaction of highly charged ions (HCI) with solids leads to particle sputtering, which can be used for defect-mediated engineering of the properties of the material. Ions can store energy in the form of kinetic and potential energy (sum of the ionization energies) and transfer it to the solid upon impact. The interaction and sputtering mechanisms depend significantly on the projectile energi… ▽ More The interaction of highly charged ions (HCI) with solids leads to particle sputtering, which can be used for defect-mediated engineering of the properties of the material. Ions can store energy in the form of kinetic and potential energy (sum of the ionization energies) and transfer it to the solid upon impact. The interaction and sputtering mechanisms depend significantly on the projectile energies. However, the relevance of various interaction mechanisms is unknown. Here we show that for slow HCI (5 keV) the interaction mechanisms leading to particle emission by electronic excitation and transferred kinetic energy are independent from each other, which is consistent with our atomistic simulations. We have irradiated substrate supported (Au, SiO$_2$) monolayers of MoS$_2$ with highly charged xenon ions (charge state: 17$+$ - 40$+$), extracted the emitted neutral, post-ionized Mo particles into a time-of-flight mass spectrometer and determined their velocity distributions. We find two main contributions, one at high velocities and a second one at lower velocities, and assign them to kinetic and potential effects respectively. Our data suggests that the dominant mechanism for potential sputtering is related to electron-phonon coupling, while non-thermal processes play no significant role. We anticipate that our work will be a starting point for further experiments and simulations to determine whether the different processes resulting from E$_{pot}$ and E$_{kin}$ can be separated or whether synergistic effects play a role. △ Less

Submitted 9 August, 2022; originally announced August 2022.

Comments: 9 pages, 5 figures

Mass transport via in-plane nanopores in graphene oxide membranes

Authors: Tobias Foller, Lukas Madauss, Dali Ji, Xiaojun Ren, K. Kanishka H. De Silva, Tiziana Musso Masamichi Yoshimura, Henning Lebius, Abdenacer Benyagoub, Priyank Kumar, Marika Schleberger, Rakesh Joshi

Abstract: Angstrom confined solvents in two-dimensional laminates travel through interlayer spacings, gaps between adjacent sheets, and via in plane pores. Among these, experimental access to investigate the mass transport through in plane pores is lacking. Here, we create these nanopores in graphene oxide membranes via ion irradiation with precise control over functional groups, pore size and pore density.… ▽ More Angstrom confined solvents in two-dimensional laminates travel through interlayer spacings, gaps between adjacent sheets, and via in plane pores. Among these, experimental access to investigate the mass transport through in plane pores is lacking. Here, we create these nanopores in graphene oxide membranes via ion irradiation with precise control over functional groups, pore size and pore density. Low ion induced pore densities result in mild reduction and increased water permeation for the membranes. Higher pore densities lead to pronounced reduction and complete blockage of pure water however allows permeation of ethanol water mixture due to weakening of hydrogen network. We confirm with simulations, that the attraction of the solvents towards the pores with functional groups and disruption of the angstrom confined hydrogen network is crucial to allow in plane pore transport. △ Less

Submitted 27 January, 2022; originally announced January 2022.

Dynamic Growth/Etching Model for the Synthesis of Two-Dimensional Transition Metal Dichalcogenides via Chemical Vapour Deposition

Authors: E. Pollmann, A. Maas, D. Marnold, A. Hucht, R. Neubieser, M. Stief, L. Madauß, M. Schleberger

Abstract: The preparation of two-dimensional transition metal dichalcogenides on an industrially relevant scale will rely heavily on bottom-up methods such as chemical vapour deposition. In order to obtain sufficiently large quantities of high-quality material, a knowledge-based optimization strategy for the synthesis process must be developed. A major problem that has not yet been considered is the degrada… ▽ More The preparation of two-dimensional transition metal dichalcogenides on an industrially relevant scale will rely heavily on bottom-up methods such as chemical vapour deposition. In order to obtain sufficiently large quantities of high-quality material, a knowledge-based optimization strategy for the synthesis process must be developed. A major problem that has not yet been considered is the degradation of materials by etching during synthesis due to the high growth temperatures. To address this problem, we introduce a mathematical model that accounts for both growth and, for the first time, etching to describe the synthesis of two-dimensional transition metal dichalcogenides. We consider several experimental observations that lead to a differential equation based on several terms corresponding to different supply mechanisms, describing the time-dependent change in flake size. By solving this equation and fitting two independently obtained experimental data sets, we find that the flake area is the leading term in our model. We show that the differential equation can be solved analytically when only this term is considered, and that this solution provides a general description of complex growth and shrinkage phenomena. Physically, the dominance suggests that the supply of material via the flake itself contributes most to its net growth. This finding also implies a predominant interplay between insertion and release of atoms and their motion in the form of a highly dynamic process within the flake. In contrast to previous assumptions, we show that the flake edges do not play an important role in the actual size change of the two-dimensional transition metal dichalcogenide flakes during chemical vapour deposition. △ Less

Submitted 20 January, 2022; originally announced January 2022.

Comments: 22 pages, 3 figures

Journal ref: 2D Materials 9, 035001 (2022)

Apparent Differences between Single Layer Molybdenum Disulfide Fabricated via Chemical Vapor Deposition and Exfoliation

Authors: E. Pollmann, L. Madauß, S. Schumacher, U. Kumar, F. Heuvel, C. vom Ende, S. Yilmaz, S. Gündörmüs, M. Schleberger

Abstract: Innovative applications based on two-dimensional solids require cost-effective fabrication processes resulting in large areas of high quality materials. Chemical vapour deposition is among the most promising methods to fulfill these requirements. However, for 2D materials prepared in this way it is generally assumed that they are of inferior quality in comparison to the exfoliated 2D materials com… ▽ More Innovative applications based on two-dimensional solids require cost-effective fabrication processes resulting in large areas of high quality materials. Chemical vapour deposition is among the most promising methods to fulfill these requirements. However, for 2D materials prepared in this way it is generally assumed that they are of inferior quality in comparison to the exfoliated 2D materials commonly used in basic research. In this work we challenge this assumption and aim to quantify the differences in quality for the prototypical transition metal dichalcogenide MoS$_2$. To this end single layers of MoS$_2$ prepared by different techniques (exfoliation, grown by different chemical vapor deposition methods, transfer techniques, and as vertical heterostructure with graphene) are studied by Raman and photoluminescence spectroscopy, complemented by atomic force microscopy. We demonstrate that as-prepared MoS$_2$, directly grown on SiO$_2$, differs from exfoliated MoS$_2$ in terms of higher photoluminescence, lower electron concentration, and increased strain. As soon as a water film is intercalated (e.g., by transfer) underneath the grown MoS$_2$, in particular the (opto-)electronic properties become practically identical to those of exfoliated MoS$_2$. A comparison of the two most common precursors shows that the growth with MoO$_3$ causes greater strain and/or defect density deviations than growth with ammonium heptamolybdate. As part of a heterostructure directly grown MoS$_2$ interacts much stronger with the substrate, and in this case an intercalated water film does not lead to the complete decoupling, which is typical for exfoliation or transfer. Our work shows that the supposedly poorer quality of grown 2D transition metal dichalcogenides is indeed a misconception. △ Less

Submitted 10 June, 2020; originally announced June 2020.

Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors

Authors: A. Pelella, O. Kharsah, A. Grillo, F. Urban, M. Passacantando, F. Giubileo, L. Iemmo, S. Sleziona, E. Pollmann, L. Madauß, M. Schleberger, A. Di Bartolomeo

Abstract: This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. H… ▽ More This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects. △ Less

Submitted 2 April, 2020; originally announced April 2020.

Graphene Effusion-based Gas Sensor

Authors: Irek E. Rosłoń, Robin J. Dolleman, Hugo Licona, Martin Lee, Makars Šiškins, Henning Lebius, Lukas Madauß, Marika Schleberger, Farbod Alijani, Herre S. J. van der Zant, Peter G. Steeneken

Abstract: Porous, atomically thin graphene membranes have interesting properties for filtration and sieving applications because they can accommodate small pore sizes, while maintaining high permeability. These membranes are therefore receiving much attention for novel gas and water purification applications. Here we show that the atomic thickness and high resonance frequency of porous graphene membranes en… ▽ More Porous, atomically thin graphene membranes have interesting properties for filtration and sieving applications because they can accommodate small pore sizes, while maintaining high permeability. These membranes are therefore receiving much attention for novel gas and water purification applications. Here we show that the atomic thickness and high resonance frequency of porous graphene membranes enables an effusion based gas sensing method that distinguishes gases based on their molecular mass. Graphene membranes are used to pump gases through nanopores using optothermal forces. By monitoring the time delay between the actuation force and the membrane mechanical motion, the permeation time-constants of various gases are shown to be significantly different. The measured linear relation between the effusion time constant and the square root of the molecular mass provides a method for sensing gases based on their molecular mass. The presented microscopic effusion based gas sensor can provide a small, low-power alternative for large, high-power, mass-spectrometry and optical spectrometry based gas sensing methods. △ Less

Submitted 26 January, 2020; originally announced January 2020.

Comments: 12 pages

Molybdenum Disulphide Nanoflakes Grown by Chemical Vapour Deposition on Graphite: Nucleation, Orientation, and Charge Transfer

Authors: Erik Pollmann, Juliana M. Morbec, Lukas Madauß, Lara Bröckers, Peter Kratzer, Marika Schleberger

Abstract: Two-dimensional molybdenum disulphide on graphene grown by chemical vapour deposition is a promising van der Waals system for applications in optoelectronics and catalysis. To extend the fundamental understanding of growth and intrinsic properties of molybdenum disulphide on graphene, molybdenum disulphide on highly oriented pyrolytic graphite is a suitable model system. Here we show, experimental… ▽ More Two-dimensional molybdenum disulphide on graphene grown by chemical vapour deposition is a promising van der Waals system for applications in optoelectronics and catalysis. To extend the fundamental understanding of growth and intrinsic properties of molybdenum disulphide on graphene, molybdenum disulphide on highly oriented pyrolytic graphite is a suitable model system. Here we show, experimentally and by density-functional-theory calculations, that molybdenum disulphide flakes grow in two orientations. One of the orientations is energetically preferred, the other one is rotated by 30 degree. Because of a high energy barrier confirmed by our calculations both orientations are stable at room temperature and their switching can only be forced by external stimuli, i.e. by a scanning tunneling microscope tip. Combined Kelvin probe microscopy and Raman spectroscopy measurements show that the flakes with a typical size of a few hundred nanometers are less doped than the often studied exfoliated molybdenum disulphide single layer. △ Less

Submitted 15 October, 2019; originally announced October 2019.

Comments: 10 pages, 4 figures

Perforating freestanding molybdenum disulfide monolayers with highly charged ions

Authors: Roland Kozubek, Mukesh Tripathi, Mahdi Ghorbani-Asl, Silvan Kretschmer, Lukas Madauß, Erik Pollmann, Maria O'Brien, Niall McEvoy, Ursula Ludacka, Toma Susi, Georg S. Duesberg, Richard A. Wilhelm, Arkady V. Krasheninnikov, Jani Kotakoski, Marika Schleberger

Abstract: Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to… ▽ More Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm. △ Less

Submitted 2 July, 2019; originally announced July 2019.

Comments: 22 pages, 4 figures

Journal ref: J. Phys. Chem. Lett. 10, 5, 904-910 (2019)