Showing 1–50 of 542 results for author: MacDonald, A H

Direct observation of layer skyrmions in twisted WSe2 bilayers

Authors: Fan Zhang, Nicolás Morales-Durán, Yanxing Li, Wang Yao, Jung-Jung Su, Yu-Chuan Lin, Chengye Dong, Hyunsue Kim, Joshua A. Robinson, Allan H. Macdonald, Chih-Kang Shih

Abstract: Transition metal dichalcogenide (TMD) twisted homobilayers have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discovery of fractional Chern insulator (FCI) states in twisted MoTe2 and Chern insulators (CI) and unconventional superconductivity in twisted WSe2. In these systems, nontrivial topology in the strongly layer-hybridized regim… ▽ More Transition metal dichalcogenide (TMD) twisted homobilayers have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discovery of fractional Chern insulator (FCI) states in twisted MoTe2 and Chern insulators (CI) and unconventional superconductivity in twisted WSe2. In these systems, nontrivial topology in the strongly layer-hybridized regime can arise from a spatial patterning of interlayer tunneling amplitudes and layer-dependent potentials that yields a lattice of layer skyrmions. Here we report the direct observation of skyrmion textures in the layer degree of freedom of Rhombohedral-stacked (R-stacked) twisted WSe2 homobilayers. This observation is based on scanning tunneling spectroscopy that separately resolves the Γ-valley and K-valley moiré electronic states. We show that Γ-valley states are subjected to a moiré potential with an amplitude of ~ 120 meV. At ~150 meV above the Γ-valley, the K-valley states are subjected to a weaker moiré potential of ~30 meV. Most significantly, we reveal opposite layer polarization of the K-valley at the MX and XM sites within the moiré unit cell, confirming the theoretically predicted skyrmion layer-texture. The dI/dV map**s allow the parameters that enter the continuum model for the description of moiré bands in twisted TMD bilayers to be determined experimentally, further establishing a direct correlation between the shape of LDOS profile in real space and topology of topmost moiré band. △ Less

Submitted 28 June, 2024; originally announced June 2024.

Capacitive detection of the topological magnetoelectric effect

Authors: Chao Lei, Perry T. Mahon, C. M. Canali, A. H. MacDonald

Abstract: The topological magnetoelectric effect (TME) is a defining property of 3-dimensional $\mathbb{Z}_{2}$ topological insulators that was predicted on theoretical grounds more than a decade ago, but has still not been directly measured. In this Letter we propose a strategy for direct measurement of the TME, and discuss the precision of the effect in real devices with charge and spin disorder. The topological magnetoelectric effect (TME) is a defining property of 3-dimensional $\mathbb{Z}_{2}$ topological insulators that was predicted on theoretical grounds more than a decade ago, but has still not been directly measured. In this Letter we propose a strategy for direct measurement of the TME, and discuss the precision of the effect in real devices with charge and spin disorder. △ Less

Submitted 17 June, 2024; originally announced June 2024.

Comments: 5 + 1 pages, 3 figures

Intraband collective excitations in fractional Chern insulators are dark

Authors: Tobias M. R. Wolf, Yung-Chun Chao, Allan H. MacDonald, Jung Jung Su

Abstract: The low-energy collective excitations of semiconductors and insulators often couple strongly to light, allowing them to be probed optically. We argue here that in fractional Chern insulators intra-band collective excitations are dark in the sense that they couple anomalously weakly to light. This conclusion is based on a relationship between ideal quantum geometry and the structure factor of a Che… ▽ More The low-energy collective excitations of semiconductors and insulators often couple strongly to light, allowing them to be probed optically. We argue here that in fractional Chern insulators intra-band collective excitations are dark in the sense that they couple anomalously weakly to light. This conclusion is based on a relationship between ideal quantum geometry and the structure factor of a Chern band, and on a classical plasma analogy motivated by the vortexibility property of ideal Chern bands. △ Less

Submitted 15 June, 2024; originally announced June 2024.

Comments: Main text: 5 pages, 3 figures, Supmat: 5 pages, 1 figure; Comments are welcome

Optical Imaging of Flavor Order in Flat Band Graphene

Authors: Tian Xie, Tobias M. Wolf, Siyuan Xu, Zhiyuan Cui, Richen Xiong, Yunbo Ou, Patrick Hays, Ludwig F Holleis, Yi Guo, Owen I Sheekey, Caitlin Patterson, Trevor Arp, Kenji Watanabe, Takashi Taniguchi, Seth Ariel Tongay, Andrea F Young, Allan H. MacDonald, Chenhao **

Abstract: Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transit… ▽ More Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transition metal dichalcogenide layer. Through a systematic study of rhombohedral and rotationally faulted graphene bilayers and trilayers, we show that when the semiconducting dichalcogenide is in direct contact with the graphene, the exciton response is most sensitive to the large momentum rearrangement of the Fermi surface, providing information that is distinct from and complementary to electrical compressibility measurements. The wide-field imaging capability of optical probes allows us to obtain spatial maps of flavor orders with high throughput, and with broad temperature and device compatibility. Our work paves the way for optical probing and imaging of flavor orders in flat band graphene systems. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Comments: 29 pages, 4 figures, with supplementary materials

Adiabatic Approximation and Aharonov-Casher Bands in Twisted Homobilayer TMDs

Authors: **gtian Shi, Nicolás Morales-Durán, Eslam Khalaf, Allan H. MacDonald

Abstract: Topological flat moiré bands with nearly ideal quantum geometry have been identified in homobilayer transition metal dichalcogenide moiré superlattices, and are thought to be crucial for understanding the fractional Chern insulating states recently observed therein. Previous work proposed viewing the system using an adiabatic approximation that replaces the position-dependence of the layer spinor… ▽ More Topological flat moiré bands with nearly ideal quantum geometry have been identified in homobilayer transition metal dichalcogenide moiré superlattices, and are thought to be crucial for understanding the fractional Chern insulating states recently observed therein. Previous work proposed viewing the system using an adiabatic approximation that replaces the position-dependence of the layer spinor with a nonuniform periodic effective magnetic field. When the local zero-point kinetic energy of this magnetic field cancels identically against that of an effective Zeeman energy, a Bloch-band version of Aharonov-Casher zero-energy modes, which we refer to as Aharonov-Casher band, emerges leading to ideal quantum geometry. Here, we critically examine the validity of the adiabatic approximation and identify the parameter regimes under which Aharonov-Casher bands emerge. We show that the adiabatic approximation is accurate for a wide range of parameters including those realized in experiments. Furthermore, we show that while the cancellation leading to the emergence of Aharonov-Casher bands is generally not possible beyond the leading Fourier harmonic, the leading harmonic is the dominant term in the Fourier expansions of the zero-point kinetic energy and Zeeman energy. As a result, the leading harmonic expansion accurately captures the trend of the bandwidth and quantum geometry, though it may fail to quantitatively reproduce more detailed information about the bands such as the Berry curvature distribution. △ Less

Submitted 29 June, 2024; v1 submitted 20 April, 2024; originally announced April 2024.

Tuning Fermi Liquids with Sub-wavelength Cavities

Authors: Riccardo Riolo, Andrea Tomadin, Giacomo Mazza, Reza Asgari, Allan H. MacDonald, Marco Polini

Abstract: The question of whether or not passive sub-wavelength cavities can alter the properties of quantum materials is currently attracting a great deal of attention. In this Letter we show that the Fermi liquid parameters of a two-dimensional metal are modified by cavity polariton modes, and that these changes can be monitored by measuring a paradigmatic magneto-transport phenomenon, Shubnikov-de Haas o… ▽ More The question of whether or not passive sub-wavelength cavities can alter the properties of quantum materials is currently attracting a great deal of attention. In this Letter we show that the Fermi liquid parameters of a two-dimensional metal are modified by cavity polariton modes, and that these changes can be monitored by measuring a paradigmatic magneto-transport phenomenon, Shubnikov-de Haas oscillations in a weak perpendicular magnetic field. This effect is intrinsic, and totally unrelated to disorder. As an illustrative example, we carry out explicit calculations of the Fermi liquid parameters of graphene in a planar van der Waals cavity formed by natural hyperbolic crystals and metal gates. △ Less

Submitted 29 March, 2024; originally announced March 2024.

Orbital Competition in Bilayer Graphene's Fractional Quantum Hall Effect

Authors: Bishoy M. Kousa, Nemin Wei, Allan H. MacDonald

Abstract: The lowest Landau level of bilayer graphene has an octet of internal degrees of freedom, composed from spin, valley and orbital two-level systems. Dominance of $n=0$ orbitals over $n=1$ orbitals in low energy quantum fluctuations leads to distinct fractional quantum Hall characteristics compared dominance of $n=1$ over $n=0$. The competition between $n=0$ and $n=1$ orbitals depends sensitively on… ▽ More The lowest Landau level of bilayer graphene has an octet of internal degrees of freedom, composed from spin, valley and orbital two-level systems. Dominance of $n=0$ orbitals over $n=1$ orbitals in low energy quantum fluctuations leads to distinct fractional quantum Hall characteristics compared dominance of $n=1$ over $n=0$. The competition between $n=0$ and $n=1$ orbitals depends sensitively on particle-hole asymmetry and on Lamb shifts due to exchange interactions with the negative energy sea, which must be accounted for simultaneously in assessing the orbital competition. We identify the circumstances under which $n=1$, which supports strong even-denominator FQH states with non-abelian quasiparticles, emerges robustly as the low-energy Landau level. △ Less

Submitted 15 February, 2024; originally announced February 2024.

Gate-tunable topological phases in superlattice modulated bilayer graphene

Authors: Yongxin Zeng, Tobias M. R. Wolf, Chunli Huang, Nemin Wei, Sayed Ali Akbar Ghorashi, Allan H. MacDonald, Jennifer Cano

Abstract: Superlattice potential modulation can produce flat minibands in Bernal-stacked bilayer graphene. In this work we study how band topology and interaction-induced symmetry-broken phases in this system are controlled by tuning the displacement field and the shape and strength of the superlattice potential. We use an analytic perturbative analysis to demonstrate that topological flat bands are favored… ▽ More Superlattice potential modulation can produce flat minibands in Bernal-stacked bilayer graphene. In this work we study how band topology and interaction-induced symmetry-broken phases in this system are controlled by tuning the displacement field and the shape and strength of the superlattice potential. We use an analytic perturbative analysis to demonstrate that topological flat bands are favored by a honeycomb-lattice-shaped potential, and numerics to show that the robustness of topological bands depends on both the displacement field strength and the periodicity of the superlattice potential. At integer fillings of the topological flat bands, the strength of the displacement field and the superlattice potential tune phase transitions between quantum anomalous Hall insulator, trivial insulator, and metallic states. We present mean-field phase diagrams in a gate voltage parameter space at filling factor $ν=1$, and discuss the prospects of realizing quantum anomalous Hall insulators and fractional Chern insulators when the superlattice potential modulation is produced by dielectric patterning or adjacent moiré materials. △ Less

Submitted 8 January, 2024; originally announced January 2024.

Journal ref: Phys. Rev. B 109, 195406 (2024)

GW Theory of Magic-Angle Twisted Bilayer Graphene

Authors: Jihang Zhu, Iacopo Torre, Marco Polini, Allan H. MacDonald

Abstract: Strong correlations occur in magic-angle twisted bilayer graphene (MATBG) when the octet of flat moiré minibands centered on charge neutrality (CN) is partially occupied. The octet consists of a single valence band and a single conduction band for each of four degenerate spin-valley flavors. Motivated by the importance of Hartree electrostatic interactions in determining the filling-factor depende… ▽ More Strong correlations occur in magic-angle twisted bilayer graphene (MATBG) when the octet of flat moiré minibands centered on charge neutrality (CN) is partially occupied. The octet consists of a single valence band and a single conduction band for each of four degenerate spin-valley flavors. Motivated by the importance of Hartree electrostatic interactions in determining the filling-factor dependent band structure, we use a time-dependent Hartree (GW) approximation to gain insight into electronic correlations. We find that the electronic compressibility is dominated by Hartree interactions, that paramagnetic states are stable over a range of density near CN, and that the dependence of energy on flavor polarization is strongly overestimated by mean-field theory. △ Less

Submitted 5 January, 2024; originally announced January 2024.

Weak localization as a probe of intervalley coherence in graphene multilayers

Authors: Nemin Wei, Yongxin Zeng, A. H. MacDonald

Abstract: Spontaneous intervalley coherence is suspected in several different graphene multilayer systems, but is difficult to confirm because of a paucity of convenient experimental signatures. Here we suggest that magneto-conductance features associated with quantum corrections to Drude conductivity can serve as a smoking gun for intervalley coherence that does not break time-reversal symmetry. In this cl… ▽ More Spontaneous intervalley coherence is suspected in several different graphene multilayer systems, but is difficult to confirm because of a paucity of convenient experimental signatures. Here we suggest that magneto-conductance features associated with quantum corrections to Drude conductivity can serve as a smoking gun for intervalley coherence that does not break time-reversal symmetry. In this class of ordered multilayer quantum transport corrections can produce weak localization or weak antilocalization, depending on whether the valley order belongs to the orthogonal or symplectic symmetry class. Our analysis motivates low-temperature weak-field magnetoresistance measurements in graphene multilayers in which time-reversal invariant intervalley coherent order is conjectured. △ Less

Submitted 18 December, 2023; originally announced December 2023.

Comments: Main text: 5 pages, 3 figures; Supplementary materials: 12 page, 4 figures

$\mathbb{Z}_{2}=0$ is topological too

Authors: Chao Lei, Perry T. Mahon, Allan H. MacDonald

Abstract: The electronic ground state of a three-dimensional (3D) band insulator with time-reversal ($Θ$) symmetry or time-reversal times a discrete translation ($ΘT_{1/2}$) symmetry is classified by a $\mathbb{Z}_{2}$-valued topological invariant and characterized by quantized magnetoelectric response. Here we demonstrate by explicit calculation in model $\mathbb{Z}_{2}$ topological insulator thin-films th… ▽ More The electronic ground state of a three-dimensional (3D) band insulator with time-reversal ($Θ$) symmetry or time-reversal times a discrete translation ($ΘT_{1/2}$) symmetry is classified by a $\mathbb{Z}_{2}$-valued topological invariant and characterized by quantized magnetoelectric response. Here we demonstrate by explicit calculation in model $\mathbb{Z}_{2}$ topological insulator thin-films that whereas the magnetoelectric response is localized at the surface in the $Θ$ symmetry (non-magnetic) case, it is non-universally partitioned between surface and interior contributions in the $ΘT_{1/2}$ (anti-ferromagnetic) case, while remaining quantized. Within our model the magnetic field induced polarization arises entirely from an anomalous ${\cal N}=0$ Landau level subspace within which the projected Hamiltonian is a generalized Su-Schrieffer-Heeger model whose topological properties are consistent with those of the starting 3D model. △ Less

Submitted 29 November, 2023; originally announced November 2023.

Comments: 6+13 pages, 4 figures, comments welcome

Ab-initio study of the energy competition between Γand K valleys in bilayer transition metal dichalcogenides

Authors: Sam Olin, Erekle Jmukhadze, Allan H. MacDonald, Wei-Cheng Lee

Abstract: Moiré engineering in two-dimensional van der Waals bilayer crystals has emerged as a flexible platform for controlling strongly correlated electron systems. The competition between valleys for the band extremum energy position in the parent layers is crucial in deciding the qualitative nature of the moiré Hamiltonian since it controls the physics of the moiré minibands. Here we use density functio… ▽ More Moiré engineering in two-dimensional van der Waals bilayer crystals has emerged as a flexible platform for controlling strongly correlated electron systems. The competition between valleys for the band extremum energy position in the parent layers is crucial in deciding the qualitative nature of the moiré Hamiltonian since it controls the physics of the moiré minibands. Here we use density functional theory to examine the competition between K and $Γ$ for the valence band maximum in homo- and hetero-bilayers formed from the transition metal dichalcogenides (TMD), MX\{_2} where M=Mo,W and X=S,Se,Te. We shed light on how the competition is influenced by interlayer separation, which can be modified by applying pressure, by external gate-defined electric fields, and by transition metal atom d-orbital correlations. Our findings are related to several recent experiments, and contribute to the development of design rules for moiré materials. △ Less

Submitted 30 October, 2023; v1 submitted 26 October, 2023; originally announced October 2023.

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Authors: Hyunsue Kim, Mengke Liu, Lisa Frammolino, Yanxing Li, Fan Zhang, Woojoo Lee, Chengye Dong, Yi-Fan Zhao, Guan-Yu Chen, Pin-Jui Hsu, Cui-Zu Chang, Joshua Robinson, Jiaqiang Yan, Xiaoqin Li, Allan H. MacDonald, Chih-Kang Shih

Abstract: Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth… ▽ More Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of high-quality MnBi2Te4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in-situ characterization techniques, we obtain critical insights into the atomic-level control of MnBi2Te4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses. Overall, these results establish a foundation for understanding the growth dynamics of MnBi2Te4 and pave the way for the future applications of MBE in emerging topological quantum materials. △ Less

Submitted 11 September, 2023; originally announced September 2023.

Comments: 20 pages, 4 figures

Itinerant ferromagnetism in transition metal dichalcogenides moiré superlattices

Authors: Pawel Potasz, Nicolás Morales-Durán, Nai Chao Hu, Allan H. MacDonald

Abstract: Moiré materials are artificial crystals formed at van der Waals heterojunctions that have emerged as a highly tunable platform to realize much of the rich quantum physics of electrons in atomic scale solids, also providing opportunities to discover new quantum phases of matter. Here we use finite-size exact diagonalization methods to explore the physics of single-band itinerant electron ferromagne… ▽ More Moiré materials are artificial crystals formed at van der Waals heterojunctions that have emerged as a highly tunable platform to realize much of the rich quantum physics of electrons in atomic scale solids, also providing opportunities to discover new quantum phases of matter. Here we use finite-size exact diagonalization methods to explore the physics of single-band itinerant electron ferromagnetism in semiconductor moiré materials. We predict where ferromagnetism is likely to occur in triangular-lattice moiré systems, and where it is likely to yield the highest Curie temperatures. △ Less

Submitted 23 January, 2024; v1 submitted 11 September, 2023; originally announced September 2023.

Comments: 17 pages, 15 figures

Journal ref: Phys. Rev. B 109, 045144(2024)

Electrical Control of Two-Dimensional Electron-Hole Fluids in the Quantum Hall Regime

Authors: Bo Zou, Yongxin Zeng, A. H. MacDonald, Artem Strashko

Abstract: We study the influence of quantizing perpendicular magnetic fields on the ground state of a bilayer with electron and hole fluids separated by an opaque tunnel barrier. In the absence of a field, the ground state at low carrier densities is a condensate of s-wave excitons that has spontaneous interlayer phase coherence. We find that a series of phase transitions emerge at strong perpendicular fiel… ▽ More We study the influence of quantizing perpendicular magnetic fields on the ground state of a bilayer with electron and hole fluids separated by an opaque tunnel barrier. In the absence of a field, the ground state at low carrier densities is a condensate of s-wave excitons that has spontaneous interlayer phase coherence. We find that a series of phase transitions emerge at strong perpendicular fields between condensed states and incompressible incoherent states with full electron and hole Landau levels. When the electron and hole densities are unequal, condensation can occur in higher angular momentum electron-hole pair states and, at weak fields, break rotational symmetry. We explain how this physics is expressed in dual-gate phase diagrams, and predict transport and capacitively-probed thermodynamic signatures that distinguish different states. △ Less

Submitted 27 December, 2023; v1 submitted 8 September, 2023; originally announced September 2023.

Symmetry, topology, and geometry: The many faces of the topological magnetoelectric effect

Authors: Perry T. Mahon, Chao Lei, Allan H. MacDonald

Abstract: A delicate tension complicates the relationship between the topological magnetoelectric effect (TME) in three-dimensional (3D) $\mathbb{Z}_2$ topological insulators (TIs) and time-reversal symmetry (TRS). TRS underlies a particular $\mathbb{Z}_2$ topological classification of the electronic ground state of crystalline band insulators and the associated quantization of the magnetoelectric response… ▽ More A delicate tension complicates the relationship between the topological magnetoelectric effect (TME) in three-dimensional (3D) $\mathbb{Z}_2$ topological insulators (TIs) and time-reversal symmetry (TRS). TRS underlies a particular $\mathbb{Z}_2$ topological classification of the electronic ground state of crystalline band insulators and the associated quantization of the magnetoelectric response coefficient calculated using bulk linear response theory but, according to standard symmetry arguments, simultaneously forbids a nonzero magnetoelectric coefficient in any physical finite-size system. This contrast between theories of magnetoelectric response in formal bulk models and in real finite-sized materials originates from the distinct approaches required to introduce notions of (electronic) polarization and orbital magnetization in these fundamentally different environments. In this work we argue for a modified interpretation of the bulk linear response calculations in non-magnetic $\mathbb{Z}_2$ TIs that is more plainly consistent with TRS, and use this interpretation to discuss the effect's observation - still absent over a decade after its prediction. Motivated by analytical results, we conjecture a type of microscopic bulk-boundary correspondence: a bulk insulator with (generalized) TRS supports a magnetoelectric coefficient that is purely itinerant (which is generically related to the geometry of the ground state) if and only if magnetic surface dopants are required for the TME to manifest in finite samples thereof. We conclude that in non-magnetic $\mathbb{Z}_2$ TIs the TME is activated by magnetic surface dopants, that the charge density response to a uniform dc magnetic field is localized at the surface and specified by the configuration of those dopants, and that the TME is qualitatively less robust against disorder than the integer quantum Hall effect. △ Less

Submitted 17 June, 2024; v1 submitted 17 August, 2023; originally announced August 2023.

Comments: 33 pages, 5 figures

Journal ref: Phys. Rev. Research 6, 023289 (2024)

Magic Angles and Fractional Chern Insulators in Twisted Homobilayer TMDs

Authors: Nicolás Morales-Durán, Nemin Wei, **gtian Shi, Allan H. MacDonald

Abstract: We explain the appearance of magic angles and fractional Chern insulators in twisted K-valley homobilayer transition metal dichalcogenides by map** their continuum model to a Landau level problem. Our approach relies on an adiabatic approximation for the quantum mechanics of valence band holes in a layer-pseudospin field that is valid for sufficiently small twist angles and on a lowest Landau le… ▽ More We explain the appearance of magic angles and fractional Chern insulators in twisted K-valley homobilayer transition metal dichalcogenides by map** their continuum model to a Landau level problem. Our approach relies on an adiabatic approximation for the quantum mechanics of valence band holes in a layer-pseudospin field that is valid for sufficiently small twist angles and on a lowest Landau level approximation that is valid for sufficiently large twist angles. It simply explains why the quantum geometry of the lowest moiré miniband is nearly ideal at particular flat-band twist angles, predicts that topological flat bands occur only when the valley-dependent moiré potential is sufficiently strong compared to the interlayer tunneling amplitude, and provides a powerful starting point for the study of interactions △ Less

Submitted 12 December, 2023; v1 submitted 6 August, 2023; originally announced August 2023.

Comments: 14 pages, 5 figures

Journal ref: Phys. Rev. Lett. 132, 096602 (2024)

Thermodynamic behavior of correlated electron-hole fluids in van der Waals heterostructures

Authors: Ruishi Qi, Andrew Y. Joe, Zuocheng Zhang, Yongxin Zeng, Tiancheng Zheng, Qixin Feng, Emma Regan, **gxu Xie, Zheyu Lu, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Michael F. Crommie, Allan H. MacDonald, Feng Wang

Abstract: Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton superfluids. The interlayer excitons can also interact strongly with excess charge carriers when electron a… ▽ More Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton superfluids. The interlayer excitons can also interact strongly with excess charge carriers when electron and hole densities are unequal. Here, we use optical spectroscopy to quantitatively probe the local thermodynamic properties of strongly correlated electron-hole fluids in MoSe2/hBN/WSe2 heterostructures. We observe a discontinuity in the electron and hole chemical potentials at matched electron and hole densities, a definitive signature of an excitonic insulator ground state. The excitonic insulator is stable up to a Mott density of ~$0.8\times {10}^{12} \mathrm{cm}^{-2}$ and has a thermal ionization temperature of ~70 K. The density dependence of the electron, hole, and exciton chemical potentials reveals strong correlation effects across the phase diagram. Compared with a non-interacting uniform charge distribution, the correlation effects lead to significant attractive exciton-exciton and exciton-charge interactions in the electron-hole fluid. Our work highlights the unique quantum behavior that can emerge in strongly correlated electron-hole systems. △ Less

Submitted 22 June, 2023; originally announced June 2023.

Pressure tunable quantum anomalous Hall states in a topological antiferromagnet

Authors: Su Kong Chong, Chao Lei, Jie Li, Yang Cheng, David Graf, Seng Huat Lee, Masaki Tanabe, Ting-Hsun Yang, Zhiqiang Mao, Allan H. MacDonald, Kang L. Wang

Abstract: Mechanical modulation of the lattice parameter can modify the electronic structure and manipulate the magnetic coupling of a material without introducing impurities. Inspired by success in pressure-controlled magnetism, we investigate the effect of hydrostatic pressure on quantized Chern states in the antiferromagnetic topological insulator MnBi2Te4, using transport as a probe. We show that pressu… ▽ More Mechanical modulation of the lattice parameter can modify the electronic structure and manipulate the magnetic coupling of a material without introducing impurities. Inspired by success in pressure-controlled magnetism, we investigate the effect of hydrostatic pressure on quantized Chern states in the antiferromagnetic topological insulator MnBi2Te4, using transport as a probe. We show that pressure can enhance the robustness of quantum anomalous Hall (QAH) phases that are otherwise delicate in 7SL MnBi2Te4 and in the spin-flop (SF) state of 8SL MnBi2Te4. We explain our findings using a coupled Dirac cone model of MnBi2Te4, which identifies stronger hybridization between van der Waals layers as the driver of topological states. We further demonstrate that moderate pressures readily available in laboratory systems can provide reversible control of magnetic and topological phases. Our results reveal a strong connection between the mechanical engineering of band topology and magnetism. △ Less

Submitted 17 June, 2023; originally announced June 2023.

Comments: 11 pages, 4 figures

Strong magnetic proximity effect in Van der Waals heterostructures driven by direct hybridization

Authors: C. Cardoso, A. T. Costa, A. H. MacDonald, J. Fernández-Rossier

Abstract: We propose a new class of magnetic proximity effects based on the spin dependent hybridization between the electronic states at the Fermi energy in a non-magnetic conductor and the narrow spin split bands of a ferromagnetic insulator. Unlike conventional exchange proximity, we show this hybridization proximity effect has a very strong influence on the non-magnetic layer and can be further modulate… ▽ More We propose a new class of magnetic proximity effects based on the spin dependent hybridization between the electronic states at the Fermi energy in a non-magnetic conductor and the narrow spin split bands of a ferromagnetic insulator. Unlike conventional exchange proximity, we show this hybridization proximity effect has a very strong influence on the non-magnetic layer and can be further modulated by application of an electric field. We use DFT calculations to illustrate this effect in graphene placed next to a monolayer of CrI$_3$, a ferromagnetic insulator. We find strong hybridization of the graphene bands with the narrow conduction band of CrI$_3$ in one spin channel only. We show that our results are robust with respect to lattice mismatch and twist angle variations. Furthermore, we show that an out-of-plane electric field can be used to modulate the hybridization strength, paving the way for applications. △ Less

Submitted 26 May, 2023; originally announced May 2023.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 108, 184423 (2023)

Magnetic States of Graphene Proximitized Kitaev Materials

Authors: **gtian Shi, A. H. MacDonald

Abstract: Single layer $α$-ruthenium trichloride ($\rmα-RuCl_3$) has been proposed as a potential quantum spin liquid. Graphene/$\rm RuCl_3$ heterobilayers have been extensively studied with a focus on the large interlayer electron transfer that dopes both materials. Here we examine the interplay between the competing magnetic state of $\rm RuCl_3$ layer and graphene electronic properties. We perform self-c… ▽ More Single layer $α$-ruthenium trichloride ($\rmα-RuCl_3$) has been proposed as a potential quantum spin liquid. Graphene/$\rm RuCl_3$ heterobilayers have been extensively studied with a focus on the large interlayer electron transfer that dopes both materials. Here we examine the interplay between the competing magnetic state of $\rm RuCl_3$ layer and graphene electronic properties. We perform self-consistent Hartree-Fock calculations on a Hubbard-Kanamori model of the $4d^5$ $t_{2g}$ electrons of $\rmα-RuCl_3$ and confirm that out-of-plane ferromagnetic and zigzag antiferromagnetic states are energetically competitive. We show that the influence of hybridization between graphene and $\rmα-RuCl_3$ bands is strongly sensitive to the magnetic configuration of $\rm RuCl_3$ and the relative orientations of the two layers. We argue that strong hybridization leads to graphene magneto-resistance and that it may tilt the balance between closely competing magnetic states. Our analysis can be applied to any van der Waals heterobilayer system with weak interlayer hybridization and allows for arbitrary lattice constant mismatch and relative orientation. △ Less

Submitted 19 July, 2023; v1 submitted 20 May, 2023; originally announced May 2023.

Journal ref: Phys. Rev. B 108, 064401 (2023)

Partial condensation of mobile excitons in graphene multilayers

Authors: Igor V. Blinov, Chunli Huang, Nemin Wei, Qin Wei, Tobias Wolf, Allan H. MacDonald

Abstract: At a large displacement field, in rhomboedral and Bernal-stacked graphene a normal paramagnetic state transitions to a correlated state. Recent experiments showed that such systems have several phase transitions as a function of the carrier density. The phase adjacent to a paramagnetic state has anomalously high resistance and reduced degeneracy of the Fermi sea. We show that both phenomena can be… ▽ More At a large displacement field, in rhomboedral and Bernal-stacked graphene a normal paramagnetic state transitions to a correlated state. Recent experiments showed that such systems have several phase transitions as a function of the carrier density. The phase adjacent to a paramagnetic state has anomalously high resistance and reduced degeneracy of the Fermi sea. We show that both phenomena can be explained through a concept of partial intervalley exciton condensation: a fraction of particles condenses into excitons, and another forms an intervalley coherent Fermi liquid. The exciton part of the system do not contribute to the electrical current thus increasing the resistance. Within this paradigm, the increase in the resistance has entirely geometrical origin. We check validity of the phenomenological theory through numerical calculations. We also show that the quantum oscillation data should not be very different between the partial excitonic state and the intervalley coherent states suggested by other authors. Further, we suggest STM/AFM or Raman spectroscopy to have a conclusive evidence for the occurrence of the partial exciton condensation that we suggest in this paper. △ Less

Submitted 30 March, 2023; originally announced March 2023.

Kerr, Faraday, and Magnetoelectric Effects in MnBi$_2$Te$_4$ Thin Films

Authors: Chao Lei, Allan H. MacDonald

Abstract: The topological magneto-electric effect (TME) is a characteristic property of topological insulators. In this article we use a simplified coupled-Dirac-cone electronic structure model to theoretically evaluate the THz and far infrared Kerr and Faraday responses of thin films of MnBi$_2$Te$_4$ with up to $N=10$ septuple layers with the goal of clarifying the relationship between these convenient ma… ▽ More The topological magneto-electric effect (TME) is a characteristic property of topological insulators. In this article we use a simplified coupled-Dirac-cone electronic structure model to theoretically evaluate the THz and far infrared Kerr and Faraday responses of thin films of MnBi$_2$Te$_4$ with up to $N=10$ septuple layers with the goal of clarifying the relationship between these convenient magneto-optical observable and the TME. We find that for even $N$ the linear Kerr and Faraday responses to an electric field vanish in the low-frequency limit, even though the the magnetoelectric response is large and approximately quantized. △ Less

Submitted 26 March, 2023; originally announced March 2023.

Comments: 5+7 pages

Journal ref: Phys. Rev. B 108, 125424 (2023)

Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers

Authors: Zui Tao, Bowen Shen, Wen** Zhao, Nai Chao Hu, Tingxin Li, Shengwei Jiang, Lizhong Li, Kenji Watanabe, Takashi Taniguchi, Allan H. MacDonald, Jie Shan, Kin Fai Mak

Abstract: The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin-orbit coupling. In general, stronger spin-orbit coupling favors larger SHEs but shorter spin relaxation times and diffusion lengths. To achieve both large SHEs and long-… ▽ More The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin-orbit coupling. In general, stronger spin-orbit coupling favors larger SHEs but shorter spin relaxation times and diffusion lengths. To achieve both large SHEs and long-range spin transport in a single material has remained a challenge. Here we demonstrate a giant intrinsic SHE in AB-stacked MoTe2/WSe2 moiré bilayers by direct magneto optical imaging. Under moderate electrical currents with density < 1 A/m, we observe spin accumulation on transverse sample edges that nearly saturates the spin density. We also demonstrate long-range spin Hall transport and efficient non-local spin accumulation limited only by the device size (about 10 um). The gate dependence shows that the giant SHE occurs only near the Chern insulating state, and at low temperatures, it emerges after the quantum anomalous Hall breakdown. Our results demonstrate moiré engineering of Berry curvature and large SHEs for potential spintronics applications. △ Less

Submitted 22 March, 2023; originally announced March 2023.

Magnetism and Quantum Melting in Moiré-Material Wigner Crystals

Authors: Nicolás Morales-Durán, Pawel Potasz, Allan H. MacDonald

Abstract: Recent experiments have established that semiconductor-based moiré materials can host incompressible states at a series of fractional moiré-miniband fillings. These states have been identified as generalized Wigner crystals in which electrons localize on a subset of the available triangular-lattice moiré superlattice sites. In this article, we use momentum-space exact diagonalization to investigat… ▽ More Recent experiments have established that semiconductor-based moiré materials can host incompressible states at a series of fractional moiré-miniband fillings. These states have been identified as generalized Wigner crystals in which electrons localize on a subset of the available triangular-lattice moiré superlattice sites. In this article, we use momentum-space exact diagonalization to investigate the many-body ground state evolution at rational fillings from the weak-hop** classical lattice gas limit, in which only spin degrees-of-freedom are active at low energies, to the strong-hop** metallic regime where the Wigner crystals melt. We specifically address the nature of the magnetic ground states of the generalized Wigner crystals at fillings $ν$ = 1/3 and $ν$ = 2/3. △ Less

Submitted 19 July, 2023; v1 submitted 27 October, 2022; originally announced October 2022.

Comments: 12 pages, 8 figures

Anomalous Landau quantization in intrinsic magnetic topological insulators

Authors: Su Kong Chong, Chao Lei, Seng Huat Lee, Jan Jaroszynski, Zhiqiang Mao, Allan H. MacDonald, Kang L. Wang

Abstract: The intrinsic magnetic topological insulators, Mn(Bi1-xSbx)2Te4, in their spin-aligned strong field configuration have been identified as a Weyl semimetal with single pair of Weyl nodes1-4. A direct consequence of the Weyl state is the layer-dependent Chern number (C) in thin film quantization. Previous reports in MnBi2Te4 thin films revealed the higher C states in the spin alignment by either inc… ▽ More The intrinsic magnetic topological insulators, Mn(Bi1-xSbx)2Te4, in their spin-aligned strong field configuration have been identified as a Weyl semimetal with single pair of Weyl nodes1-4. A direct consequence of the Weyl state is the layer-dependent Chern number (C) in thin film quantization. Previous reports in MnBi2Te4 thin films revealed the higher C states in the spin alignment by either increasing the film thickness5 or controlling chemical potential into electron do**6-8. A clear picture of the higher Chern states is still missing as the situation is complicated by the emerging of surface band Landau levels (LLs) in magnetic field. Here, we report a tunable layer-dependent of C= 1 state with the Sb substitutions by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dualgated devices, consistent with the calculations of the bulk Weyl point separations in the compounds. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted from a theory of surface and bulk spin-polarized Landau levels spectrum in thin film magnetic topological insulators. Our results demonstrate that Mn(Bi1-xSbx)2Te4 thin films provide a highly tunable platform for probing the physics of the anomalous Landau quantization that is strongly sensitive to magnetic order. △ Less

Submitted 28 August, 2022; originally announced August 2022.

Comments: 23 pages, 7 figures

Bistritzer-MacDonald dynamics in twisted bilayer graphene

Authors: Alexander B. Watson, Tianyu Kong, Allan H. MacDonald, Mitchell Luskin

Abstract: The Bistritzer-MacDonald (BM) model, introduced in \cite{Bistritzer2011}, attempts to capture the electronic properties of twisted bilayer graphene (TBG), even at incommensurate twist angles, by an effective periodic model over the bilayer moiré pattern. Starting from a tight-binding model, we identify a regime where the BM model emerges as the effective dynamics for electrons modeled as wave-pack… ▽ More The Bistritzer-MacDonald (BM) model, introduced in \cite{Bistritzer2011}, attempts to capture the electronic properties of twisted bilayer graphene (TBG), even at incommensurate twist angles, by an effective periodic model over the bilayer moiré pattern. Starting from a tight-binding model, we identify a regime where the BM model emerges as the effective dynamics for electrons modeled as wave-packets spectrally concentrated at the monolayer Dirac points, up to error that can be rigorously estimated. Using measured values of relevant physical constants, we argue that this regime is realized in TBG at the first "magic" angle. △ Less

Submitted 13 October, 2022; v1 submitted 27 July, 2022; originally announced July 2022.

Comments: 50 pages, 9 figures. Fixed wave-packet scaling, bounded some higher-order terms in the residual, and added reference to Bal-Cazeaux-Massatt-Quinn. Bounding the higher-order terms required strengthening our assumption on the regularity of initial data

Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers

Authors: Kenneth Lin, Nitin Prasad, G. William Burg, Bo Zou, Keiji Ueno, Kenji Watanabe, Takashi Taniguchi, Allan H. MacDonald, Emanuel Tutuc

Abstract: We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($ν_{\mathrm{T}}$) and bottom ($ν_{\mathrm{B}}$) layer filling factors are near $ν_{\mathrm{T}}=\pm1/2, \pm3/2$ and $ν_{\mathrm{B}}=\pm1/2, \pm3/2$, and the total filling factor $ν= \pm1$ or $\pm3$. The zero-… ▽ More We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($ν_{\mathrm{T}}$) and bottom ($ν_{\mathrm{B}}$) layer filling factors are near $ν_{\mathrm{T}}=\pm1/2, \pm3/2$ and $ν_{\mathrm{B}}=\pm1/2, \pm3/2$, and the total filling factor $ν= \pm1$ or $\pm3$. The zero-bias interlayer conductance peaks are stable against variations of layer filling factor, and signal the emergence of interlayer phase coherence. Our results highlight twist control as a key attribute in revealing interlayer coherence using tunneling. △ Less

Submitted 21 November, 2022; v1 submitted 23 June, 2022; originally announced June 2022.

Comments: 5 pages, 4 figures, includes supplementary material

Magnetic ground states of honeycomb lattice Wigner crystals

Authors: Nitin Kaushal, Nicolás Morales-Durán, Allan H. MacDonald, Elbio Dagotto

Abstract: Lattice Wigner crystal states stabilized by long-range Coulomb interactions have recently been realized in two-dimensional moiré materials. We employ large-scale unrestricted Hartree-Fock techniques to unveil the magnetic phase diagrams of honeycomb lattice Wigner crystals. For the three lattice filling factors with the largest charge gaps, n = 2/3, 1/2, 1/3, the magnetic phase diagrams contain mu… ▽ More Lattice Wigner crystal states stabilized by long-range Coulomb interactions have recently been realized in two-dimensional moiré materials. We employ large-scale unrestricted Hartree-Fock techniques to unveil the magnetic phase diagrams of honeycomb lattice Wigner crystals. For the three lattice filling factors with the largest charge gaps, n = 2/3, 1/2, 1/3, the magnetic phase diagrams contain multiple phases, including ones with non-collinear and non-coplanar spin arrangements. We discuss magnetization evolution with external magnetic field, which has potential as an experimental signature of exotic spin states. Our theoretical results could potentially be validated in moiré materials formed from group VI transition metal dichalcogenide twisted homobilayers. △ Less

Submitted 20 June, 2022; originally announced June 2022.

The phonon Hall viscosity of ionic crystals

Authors: B. Flebus, A. H. MacDonald

Abstract: When time-reversal symmetry is broken, the low-energy description of acoustic lattice dynamics allows for a dissipationless component of the viscosity tensor, the phonon Hall viscosity, which captures how phonon chirality grows with the wavevector. In this work, we show that, in ionic crystals, a phonon Hall viscosity contribution is produced by the Lorentz forces on moving ions. We calculate typi… ▽ More When time-reversal symmetry is broken, the low-energy description of acoustic lattice dynamics allows for a dissipationless component of the viscosity tensor, the phonon Hall viscosity, which captures how phonon chirality grows with the wavevector. In this work, we show that, in ionic crystals, a phonon Hall viscosity contribution is produced by the Lorentz forces on moving ions. We calculate typical values of the Lorentz force contribution to the Hall viscosity using a simple square lattice toy model, and we compare it with literature estimates of the strengths of other Hall-viscosity mechanisms. △ Less

Submitted 26 May, 2022; originally announced May 2022.

Layer Pseudospin Magnetism in Transition-Metal-Dichalcogenide Double-Moirés

Authors: Yongxin Zeng, Nemin Wei, Allan H. MacDonald

Abstract: Spontaneous order of layer pseudospins in two-dimensional bilayers is common in quantum Hall systems, where it is responsible for hysteretic responses to gate fields in states with Ising order, and giant drag voltages in states with XY (spontaneous inter-layer phase coherence) order. In this article we predict that layer pseudospin order will also occur in double-moiré strongly correlated two-dime… ▽ More Spontaneous order of layer pseudospins in two-dimensional bilayers is common in quantum Hall systems, where it is responsible for hysteretic responses to gate fields in states with Ising order, and giant drag voltages in states with XY (spontaneous inter-layer phase coherence) order. In this article we predict that layer pseudospin order will also occur in double-moiré strongly correlated two-dimensional electron systems. We comment on similarities and differences in the competition between the two types of order in quantum Hall and double-moiré systems, and relate our findings to previous work on Falicov-Kimball models of electronic ferroelectrics. △ Less

Submitted 26 May, 2022; originally announced May 2022.

Comments: 13 pages, 4 figures

Visualizing the interplay of Dirac mass gap and magnetism at nanoscale in intrinsic magnetic topological insulators

Authors: Mengke Liu, Chao Lei, Hyunsue Kim, Yanxing Li, Lisa Frammolino, Jiaqiang Yan, Allan H. Macdonald, Chih-Kang Shih

Abstract: In intrinsic magnetic topological insulators, Dirac surface state gaps are prerequisites for quantum anomalous Hall and axion insulating states. Unambiguous experimental identification of these gaps has proved to be a challenge, however. Here we use molecular beam epitaxy to grow intrinsic MnBi2Te4 thin films. Using scanning tunneling microscopy/spectroscopy, we directly visualize the Dirac mass g… ▽ More In intrinsic magnetic topological insulators, Dirac surface state gaps are prerequisites for quantum anomalous Hall and axion insulating states. Unambiguous experimental identification of these gaps has proved to be a challenge, however. Here we use molecular beam epitaxy to grow intrinsic MnBi2Te4 thin films. Using scanning tunneling microscopy/spectroscopy, we directly visualize the Dirac mass gap and its disappearance below and above the magnetic order temperature. We further reveal the interplay of Dirac mass gaps and local magnetic defects. We find that in high defect regions, the Dirac mass gap collapses. Ab initio and coupled Dirac cone model calculations provide insight into the microscopic origin of the correlation between defect density and spatial gap variations. This work provides unambiguous identification of the Dirac mass gap in MnBi2Te4, and by revealing the microscopic origin of its gap variation, establishes a material design principle for realizing exotic states in intrinsic magnetic topological insulators. △ Less

Submitted 24 August, 2022; v1 submitted 18 May, 2022; originally announced May 2022.

Comments: Main and SI

Journal ref: PNAS 119, e2207681119 (2022)

Spontaneous time-reversal symmetry breaking in twisted double bilayer graphene

Authors: Manabendra Kuiri, Christopher Coleman, Zhenxiang Gao, Aswin Vishnuradhan, Kenji Watanabe, Takashi Taniguchi, Jihang Zhu, Allan H. MacDonald, Joshua Folk

Abstract: Twisted double bilayer graphene (tDBG) comprises two Bernal-stacked bilayer graphene sheets with a twist between them. Gate voltages applied to top and back gates of a tDBG device tune both the flatness and topology of the electronic bands, enabling an unusual level of experimental control. Broken spin/valley symmetry metallic states have been observed in tDBG devices with twist angles $\sim $ 1.2… ▽ More Twisted double bilayer graphene (tDBG) comprises two Bernal-stacked bilayer graphene sheets with a twist between them. Gate voltages applied to top and back gates of a tDBG device tune both the flatness and topology of the electronic bands, enabling an unusual level of experimental control. Broken spin/valley symmetry metallic states have been observed in tDBG devices with twist angles $\sim $ 1.2-1.3$^\circ$, but the topologies and order parameters of these states have remained unclear. We report the observation of an anomalous Hall effect in the correlated metal state of tDBG, with hysteresis loops spanning 100s of mT in out-of-plane magnetic field ($B_{\perp}$) that demonstrate spontaneously broken time-reversal symmetry. The $B_{\perp}$ hysteresis persists for in-plane fields up to several Tesla, suggesting valley (orbital) ferromagnetism. At the same time, the resistivity is strongly affected by even mT-scale values of in-plane magnetic field, pointing to spin-valley coupling or to a direct orbital coupling between in-plane field and the valley degree of freedom. △ Less

Submitted 7 April, 2022; originally announced April 2022.

Journal ref: Nature Communications 13, 6468 (2022)

Interlayer coherence in Superconductor Bilayers

Authors: Igor V. Blinov, Allan H. MacDonald

Abstract: We investigate the possibility and implications of interlayer coherence in electrically isolated superconducting bilayers. We find that in a mean-field approximation bilayers can have superconducting and excitonic order simultaneously if repulsive interactions between layers are sufficiently strong. The excitonic order implies interlayer phase coherence, and can be studied in a representation of s… ▽ More We investigate the possibility and implications of interlayer coherence in electrically isolated superconducting bilayers. We find that in a mean-field approximation bilayers can have superconducting and excitonic order simultaneously if repulsive interactions between layers are sufficiently strong. The excitonic order implies interlayer phase coherence, and can be studied in a representation of symmetric and antisymmetric bilayer states. When both orders are present we find several solutions of the mean-field equations with different values of the the symmetric and antisymmetric state pair amplitudes. The mixed state necessarily has non-zero pair amplitudes for electrons in different layers in spite of the repulsive interlayer interactions, and these are responsible for spatially indirect Andreev reflection processes in which an incoming electron in one layer can be reflected as a hole in the opposite layer. We evaluate layer diagonal and off-diagonal current-voltage relationships that can be used to identify this state experimentally. △ Less

Submitted 16 January, 2023; v1 submitted 1 April, 2022; originally announced April 2022.

Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2

Authors: Wei-Ting Hsu, Jiamin Quan, Chi-Ruei Pan, Peng-Jen Chen, Mei-Yin Chou, Wen-Hao Chang, Allan H MacDonald, Xiaoqin Li, Jung-Fu Lin, Chih-Kang Shih

Abstract: Tailoring interlayer coupling has emerged as a powerful tool to tune the electronic structure of van der Waals (vdW) bilayers. One example is the usage of the moire pattern to create controllable two-dimensional electronic superlattices through the configurational dependence of interlayer electronic couplings. This approach has led to some remarkable discoveries in twisted graphene bilayers, and t… ▽ More Tailoring interlayer coupling has emerged as a powerful tool to tune the electronic structure of van der Waals (vdW) bilayers. One example is the usage of the moire pattern to create controllable two-dimensional electronic superlattices through the configurational dependence of interlayer electronic couplings. This approach has led to some remarkable discoveries in twisted graphene bilayers, and transition metal dichalcogenide (TMD) homo- and hetero-bilayers. However, a largely unexplored factor is the interlayer distance, d, which can impact the interlayer coupling strength exponentially. In this letter, we quantitatively determine the coupling strengths as a function of interlayer spacing at various critical points of the Brillouin zone in bilayer MoS2. The exponential dependence of the coupling parameter on the gap distance is demonstrated. Most significantly, we achieved a 280% enhancement of K-valley coupling strength with an 8% reduction of the vdW gap, pointing to a new strategy in designing a novel electronic system in vdW bilayers. △ Less

Submitted 30 March, 2022; originally announced March 2022.

Functional Renormalization Group Study of Superconductivity in Rhombohedral Trilayer Graphene

Authors: Wei Qin, Chunli Huang, Tobias Wolf, Nemin Wei, Igor Blinov, Allan H. MacDonald

Abstract: We employ a functional renormalization group approach to ascertain the pairing mechanism and symmetry of the superconducting phase observed in rhombohedral trilayer graphene. Superconductivity in this system occurs in a regime of carrier density and displacement field with a weakly distorted annular Fermi sea. We find that repulsive Coulomb interactions can induce electron pairing on the Fermi sur… ▽ More We employ a functional renormalization group approach to ascertain the pairing mechanism and symmetry of the superconducting phase observed in rhombohedral trilayer graphene. Superconductivity in this system occurs in a regime of carrier density and displacement field with a weakly distorted annular Fermi sea. We find that repulsive Coulomb interactions can induce electron pairing on the Fermi surface by taking advantage of momentum-space structure associated with the finite width of the Fermi sea annulus. The degeneracy between spin-singlet and spin-triplet pairing is lifted by valley-exchange interactions that strengthen under the RG flow and develop nontrivial momentum-space structure. We find that the leading pairing instability is $d$-wave-like and spin-singlet, and that the theoretical phase diagram versus carrier density and displacement field agrees qualitatively with experiment. △ Less

Submitted 20 March, 2023; v1 submitted 17 March, 2022; originally announced March 2022.

Comments: 7+24 pages, 5+14 figures, 1+3 tables

Spin-correlated exciton-polaritons in a van der Waals magnet

Authors: Florian Dirnberger, Rezlind Bushati, Biswajit Datta, Ajesh Kumar, Allan H. MacDonald, Edoardo Baldini, Vinod M. Menon

Abstract: Strong coupling between light and elementary excitations is emerging as a powerful tool to engineer the properties of solid-state systems. Spin-correlated excitations that couple strongly to optical cavities promise control over collective quantum phenomena such as magnetic phase transitions, but their suitable electronic resonances have yet to be found. Here we report strong light-matter coupling… ▽ More Strong coupling between light and elementary excitations is emerging as a powerful tool to engineer the properties of solid-state systems. Spin-correlated excitations that couple strongly to optical cavities promise control over collective quantum phenomena such as magnetic phase transitions, but their suitable electronic resonances have yet to be found. Here we report strong light-matter coupling in $\textrm{NiPS}_3$, a van der Waals antiferromagnet with highly correlated electronic degrees of freedom. A previously unobserved class of polaritonic quasiparticles emerges from the strong coupling between its spin-correlated excitons and the photons inside a microcavity. Detailed spectroscopic analysis in conjunction with a microscopic theory provides unique insights into the origin and interactions of these exotic magnetically coupled excitations. Our work introduces van der Waals magnets to the field of strong light-matter physics and provides a path towards the design and control of correlated electron systems via cavity quantum electrodynamics. △ Less

Submitted 17 May, 2023; v1 submitted 11 March, 2022; originally announced March 2022.

Journal ref: Nat. Nanotechnol. 17, 1060-1064 (2022)

Colloquium: Quantum anomalous Hall effect

Authors: Cui-Zu Chang, Chao-Xing Liu, Allan H. MacDonald

Abstract: The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators - topologically non-trivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, non-trivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipat… ▽ More The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators - topologically non-trivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, non-trivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. The quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the (Bi,Sb)2Te3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi2Te4, (iii) moiré materials formed from graphene, and (iv ) moiré materials formed from transition metal dichalcogenides. In this Article, we review the physical mechanisms responsible for each class of QAH insulator, highlighting both differences and commonalities, and comment on potential applications of the QAH effect. △ Less

Submitted 5 September, 2022; v1 submitted 28 February, 2022; originally announced February 2022.

Comments: 39 pages, 18 figures, comments are welcome

Journal ref: Rev. Mod. Phys. 95, 011002(2023)

Confined monolayer Ag as a large gap 2D semiconductor and its momentum resolved excited states

Authors: Woojoo Lee, Yuanxi Wang, Wei Qin, Hyunsue Kim, Mengke Liu, T. Nathan Nunley, Bin Fang, Rinu Maniyara, Chengye Dong, Joshua A. Robinson, Vincent Crespi, Xiaoqin Li, Allan H. MacDonald, Chih-Kang Shih

Abstract: 2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By map** momentum-resolved electronic states using time-resolved and ang… ▽ More 2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By map** momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (> 1 eV) 2D semiconductor, consistent with GW-corrected density functional theory. The measured valence band dispersion matches the DFT-GW quasiparticle band. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m0. Possible mechanisms for this large enhancement in the apparent mass are discussed. △ Less

Submitted 20 September, 2022; v1 submitted 5 January, 2022; originally announced January 2022.

In-plane magnetic field induced density wave states near quantum spin Hall phase transitions

Authors: Yongxin Zeng, Fei Xue, Allan H. MacDonald

Abstract: We study the influence of an in-plane magnetic field and Coulomb interactions on the physics of quantum spin Hall insulators, like those in InAs/GaSb and HgTe/CdTe quantum wells. Using a Hartree-Fock mean-field theory approximation, we calculate phase diagrams as functions of the band gap, band hybridization, and magnetic field strength. We show that when the band hybridization is weak, the system… ▽ More We study the influence of an in-plane magnetic field and Coulomb interactions on the physics of quantum spin Hall insulators, like those in InAs/GaSb and HgTe/CdTe quantum wells. Using a Hartree-Fock mean-field theory approximation, we calculate phase diagrams as functions of the band gap, band hybridization, and magnetic field strength. We show that when the band hybridization is weak, the system is unstable against the formation of density wave states. As the strength of the in-plane magnetic field increases, the density-wave region of the phase diagram expands and distinct density-wave states appear. We discuss possible experimental implications of our results. △ Less

Submitted 14 December, 2021; originally announced December 2021.

Gate-tunable heavy fermion quantum criticality in a moiré Kondo lattice

Authors: Ajesh Kumar, Nai Chao Hu, Allan H. MacDonald, Andrew C. Potter

Abstract: We propose a realization of Kondo-lattice physics in moiré superlattices at the interface between a WX$_2$ homobilayer and MoX$_2$ monolayer (where X=S,Se). Under appropriate gating conditions, the interface-WX$_2$-layer forms a triangular lattice of local moments that couple to itinerant electrons in the other WX$_2$-layer via a gate-tunable Kondo exchange interaction. Using a parton mean-field a… ▽ More We propose a realization of Kondo-lattice physics in moiré superlattices at the interface between a WX$_2$ homobilayer and MoX$_2$ monolayer (where X=S,Se). Under appropriate gating conditions, the interface-WX$_2$-layer forms a triangular lattice of local moments that couple to itinerant electrons in the other WX$_2$-layer via a gate-tunable Kondo exchange interaction. Using a parton mean-field approach we identify a range of twist-angles which support a gate-tuned quantum phase transition between a heavy-fermion liquid with large anomalous Hall conductance and a fractionalized chiral spin-liquid coexisting with a light Fermi liquid, and describe experimental signatures to distinguish among competing theoretical scenarios. △ Less

Submitted 22 October, 2021; originally announced October 2021.

Comments: 4+7 pages, 2+5 figures

Journal ref: Phys. Rev. B 106, L041116 (2022)

Quantum Anomalous Hall Effect in Perfectly Compensated Collinear Antiferromagnetic Thin Films

Authors: Chao Lei, Olle Heinonen, R. J. McQueeney, A. H. MacDonald

Abstract: We show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel, independent of the interior layer magnetization configuration. Using this criteria we identify structures that have a quantum anomalous Hall effect even though they have collinear magnetic structures with no net magn… ▽ More We show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel, independent of the interior layer magnetization configuration. Using this criteria we identify structures that have a quantum anomalous Hall effect even though they have collinear magnetic structures with no net magnetization, and discuss strategies for realizing these interesting magnetic states experimentally. △ Less

Submitted 2 October, 2021; originally announced October 2021.

Comments: 6 pages + 4 figures, supplemental materials not included

Journal ref: Phys. Rev. B 106, 195433(2022)

The strong modulation limit of excitons and trions in moiré materials

Authors: Yongxin Zeng, Allan H. MacDonald

Abstract: The optical properties of weakly-doped two-dimensional materials are dominated by strong exciton and trion absorption and luminescence features. In this article we examine the influence of moiré patterns in semiconductor heterobilayers on exciton and trion states in the limit of strong moiré modulation potentials, commenting on similarities and differences compared to the case of excitons and trio… ▽ More The optical properties of weakly-doped two-dimensional materials are dominated by strong exciton and trion absorption and luminescence features. In this article we examine the influence of moiré patterns in semiconductor heterobilayers on exciton and trion states in the limit of strong moiré modulation potentials, commenting on similarities and differences compared to the case of excitons and trions in semiconductor quantum dots. We discuss strategies for using optical properties as quantitative probes of moiré materials, and the prospects for exploiting moiré materials to design unique light emitters. △ Less

Submitted 30 June, 2022; v1 submitted 30 September, 2021; originally announced October 2021.

Non-local interactions in moiré Hubbard systems

Authors: Nicolás Morales-Durán, Nai Chao Hu, Pawel Potasz, Allan H. MacDonald

Abstract: Moiré materials formed in two-dimensional semiconductor heterobilayers are quantum simulators of Hubbard-like physics with unprecedented electron-density and interaction-strength tunability. Compared to atomic scale Hubbard-like systems, electrons or holes in moiré materials are less strongly attracted to their effective lattice sites because these are defined by finite-depth potential extrema. As… ▽ More Moiré materials formed in two-dimensional semiconductor heterobilayers are quantum simulators of Hubbard-like physics with unprecedented electron-density and interaction-strength tunability. Compared to atomic scale Hubbard-like systems, electrons or holes in moiré materials are less strongly attracted to their effective lattice sites because these are defined by finite-depth potential extrema. As a consequence, non-local interaction terms like interaction-assisted hop** and intersite-exchange are more relevant. We theoretically demonstrate the possibility of tuning the strength of these coupling constants to favor unusual states of matter, including spin liquids, insulating ferromagnets, and superconductors. △ Less

Submitted 29 August, 2022; v1 submitted 6 August, 2021; originally announced August 2021.

Comments: 10 pages, 7 figures

Journal ref: Physical Review Letters 128 (21), 217202, 2022

Competing magnetic states in transition metal dichalcogenide moiré materials

Authors: Nai Chao Hu, Allan H. MacDonald

Abstract: Small-twist-angle transition metal dichalcogenide (TMD) heterobilayers develop isolated flat moiré bands that are approximately described by triangular lattice generalized Hubbard models [PhysRevLett.121.026402]. In this article we explore the metallic and insulating states that appear under different control conditions at a density of one-electron per moiré period, and the transitions between the… ▽ More Small-twist-angle transition metal dichalcogenide (TMD) heterobilayers develop isolated flat moiré bands that are approximately described by triangular lattice generalized Hubbard models [PhysRevLett.121.026402]. In this article we explore the metallic and insulating states that appear under different control conditions at a density of one-electron per moiré period, and the transitions between them. By combining fully self-consistent Hartree-Fock theory calculations with strong-coupling expansions around the atomic limit, we identify four different magnetic states and one nonmagnetic state near the model phase diagram's metal-insulator phase-transition line. Ferromagnetic insulating states, stabilized by non-local direct exchange interactions, are surprisingly prominent. △ Less

Submitted 4 August, 2021; originally announced August 2021.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. B 104, 214403 (2021)

Fabry-Pérot cavities and quantum dot formation at gate-defined interfaces in twisted double bilayer graphene

Authors: Elías Portolés, Giulia Zheng, Folkert K. de Vries, Jihang Zhu, Petar Tomić, Takashi Taniguchi, Kenji Watanabe, Allan H. MacDonald, Klaus Ensslin, Thomas Ihn, Peter Rickhaus

Abstract: The rich and electrostatically tunable phase diagram exhibited by moiré materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and localization across electrostatically defined interfaces is of fundamental importance. Little is known, however, about how the interplay between the band structure orig… ▽ More The rich and electrostatically tunable phase diagram exhibited by moiré materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and localization across electrostatically defined interfaces is of fundamental importance. Little is known, however, about how the interplay between the band structure originating from the moiré lattice and electric potential gradients affects electronic confinement. Here, we electrostatically define a cavity across a twisted double bilayer graphene sample. We observe two kinds of Fabry-Pérot oscillations. The first, independent of charge polarity, stems from confinement of electrons between dispersive-band/flat-band interfaces. The second arises from junctions between regions tuned into different flat bands. When tuning the out-of-plane electric field across the device, we observe Coulomb blockade resonances in transport, an indication of strong electronic confinement. From the gate, magnetic field and source-drain voltage dependence of the resonances, we conclude that quantum dots form at the interfaces of the Fabry-Pérot cavity. Our results constitute a first step towards better understanding interfacial phenomena in single crystal moiré devices. △ Less

Submitted 29 July, 2021; originally announced July 2021.

Comments: 4 figures

Journal ref: 2D Mater. 9 (2022) 014003

Anomalous Hall antiferromagnets

Authors: Libor Smejkal, Allan H. MacDonald, Jairo Sinova, Satoru Nakatsuji, Tomas Jungwirth

Abstract: The Hall effect, in which current flows perpendicular to an applied electrical bias, has played a prominent role in modern condensed matter physics over much of the subject's history. Appearing variously in classical, relativistic and quantum guises, it has among other roles contributed to establishing the band theory of solids, to research on new phases of strongly interacting electrons, and to t… ▽ More The Hall effect, in which current flows perpendicular to an applied electrical bias, has played a prominent role in modern condensed matter physics over much of the subject's history. Appearing variously in classical, relativistic and quantum guises, it has among other roles contributed to establishing the band theory of solids, to research on new phases of strongly interacting electrons, and to the phenomenology of topological condensed matter. The dissipationless Hall current requires time-reversal symmetry breaking. For over a century it has either been ascribed to externally applied magnetic field and referred to as the ordinary Hall effect, or ascribed to spontaneous non-zero total internal magnetization (ferromagnetism) and referred to as the anomalous Hall effect. It has not commonly been associated with antiferromagnetic order. More recently, however, theoretical predictions and experimental observations have identified large Hall effects in some compensated magnetic crystals, governed by neither of the global magnetic-dipole symmetry breaking mechanisms mentioned above. The goals of this article are to systematically organize the present understanding of anomalous antiferromagnetic materials that generate a non-zero Hall effect, which we will call anomalous Hall antiferromagnets, and to discuss this class of materials in a broader fundamental and applied research context. Our motivation in drawing attention to anomalous Hall antiferromagnets is two-fold. First, since Hall effects that are not governed by magnetic dipole symmetry breaking are at odds with the traditional understanding of the phenomenon, the topic deserves attention on its own. Second, this new reincarnation has again placed the Hall effect in the middle of an emerging field of physics at the intersection of multipole magnetism, topological condensed matter, and spintronics. △ Less

Submitted 7 July, 2021; originally announced July 2021.

Comments: 21 pages, 6 figures, 1 table

Non-local sidewall response and deviation from exact quantization of the topological magnetoelectric effect in axion-insulator thin films

Authors: Nezhat Pournaghavi, Anna Pertsova, Allan H. MacDonald, Carlo Canali

Abstract: Topological insulator (TI) thin films with surface magnetism are expected to exhibit a quantized anomalous Hall effect (QAHE) when the magnetizations on the top and bottom surfaces are parallel, and a quantized topological magnetoelectric (QTME) response when the magnetizations have opposing orientations (axion insulator phase) and the films are sufficiently thick. We present a unified picture of… ▽ More Topological insulator (TI) thin films with surface magnetism are expected to exhibit a quantized anomalous Hall effect (QAHE) when the magnetizations on the top and bottom surfaces are parallel, and a quantized topological magnetoelectric (QTME) response when the magnetizations have opposing orientations (axion insulator phase) and the films are sufficiently thick. We present a unified picture of both effects that associates deviations from exact quantization of the QTME caused by finite thickness with non-locality in the side-wall current response function. Using realistic tight-binding model calculations, we show that in $Bi_2Se_3$ TI thin films deviations from quantization in the axion insulator-phase are reduced in size when the exchange coupling of tight-binding model basis states to the local magnetization near the surface is strengthened. Stronger exchange coupling also reduces the effect of potential disorder, which is unimportant for the QAHE but detrimental for the QTME, which requires that the Fermi energy lie inside the gap at all positions. △ Less

Submitted 10 November, 2021; v1 submitted 6 July, 2021; originally announced July 2021.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 104, L201102 (2021)

Large Anomalous Hall Effect in Topological Insulators Proximitized by Collinear Antiferromagnets

Authors: Chao Lei, Hua Chen, Allan H. MacDonald

Abstract: CrSb is an attractive material for room-temperature antiferromagnetic spintronic applications because of its high Néel temperature $\sim$700 K and semi-metallic character. We study the magnetic properties of CrSb bilayers on few-layer topological insulator thin films using \emph{ab initio} density functional theory. We find that the intrinsic parts of the total anomalous Hall conductivities of the… ▽ More CrSb is an attractive material for room-temperature antiferromagnetic spintronic applications because of its high Néel temperature $\sim$700 K and semi-metallic character. We study the magnetic properties of CrSb bilayers on few-layer topological insulator thin films using \emph{ab initio} density functional theory. We find that the intrinsic parts of the total anomalous Hall conductivities of the thin films are non-zero, and approximately quantized. The Néel temperature of CrSb bilayers on few-layer topological insulator thin films is found to be approximately two times larger than that of an isolated CrSb thin film. Due to the low Fermi level density of states of CrSb, Hall quantization might be achievable by introducing disorder. CrSb bilayers on topological insulator surfaces are therefore attractive candidates for high-temperature quantum anomalous Hall effects. △ Less

Submitted 5 July, 2021; originally announced July 2021.

Comments: 6 pages, 4 figures

Charged Defects and Phonon Hall Effects in Ionic Crystals

Authors: B. Flebus, A. H. MacDonald

Abstract: It has been known for decades that a magnetic field can deflect phonons as they flow in response to a thermal gradient, producing a thermal Hall effect. Several recent experiments have revealed ratios of the phonon Hall conductivity to the phonon longitudinal conductivity in oxide dielectrics that are larger than $10^{-3}$ when phonon mean-free-paths exceed phonon wavelengths. At the same time… ▽ More It has been known for decades that a magnetic field can deflect phonons as they flow in response to a thermal gradient, producing a thermal Hall effect. Several recent experiments have revealed ratios of the phonon Hall conductivity to the phonon longitudinal conductivity in oxide dielectrics that are larger than $10^{-3}$ when phonon mean-free-paths exceed phonon wavelengths. At the same time $κ_{H}/κ_{L}$ is not strongly temperature dependent. We argue that these two properties together imply a mechanism related to phonon scattering from defects that break time-reversal symmetry, and we show that Lorentz forces acting on charged defects produce substantial skew-scattering amplitudes, and related thermal Hall effects that are consistent with recent observations. △ Less

Submitted 26 July, 2021; v1 submitted 25 June, 2021; originally announced June 2021.