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Thermal conductivity of macroporous graphene aerogel measured using high resolution comparative infrared thermal microscopy
Authors:
Jasmine M. Cox,
Jessica J. Frick,
Chen Liu,
Zhou Li,
Yaprak Ozbakir,
Carlo Carraro,
Roya Maboudian,
Debbie G. Senesky
Abstract:
Graphene aerogel (GA) is a promising material for thermal management applications across many fields due to its lightweight and thermally insulative properties. However, standard values for important thermal properties, such as thermal conductivity, remain elusive due to the lack of reliable characterization techniques for highly porous materials. Comparative infrared thermal microscopy (CITM) is…
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Graphene aerogel (GA) is a promising material for thermal management applications across many fields due to its lightweight and thermally insulative properties. However, standard values for important thermal properties, such as thermal conductivity, remain elusive due to the lack of reliable characterization techniques for highly porous materials. Comparative infrared thermal microscopy (CITM) is an attractive technique to obtain thermal conductance values of porous materials like GA, due to its non-invasive character, which requires no probing of, or contact with, the often-delicate structures and frameworks. In this study, we improve upon CITM by utilizing a higher resolution imaging setup and reducing the need for pore-filling coating of the sample (previously used to adjust for emissivity). This upgraded setup, verified by characterizing porous silica aerogel, allows for a more accurate confirmation of the fundamental thermal conductivity value of GA while still accounting for the thermal resistance at material boundaries. Using this improved method, we measure a thermal conductivity below 0.036 W/m$\cdot$K for commercial GA using multiple reference materials. These measurements demonstrate the impact of higher resolution thermal imaging to improve accuracy in low density, highly porous materials characterization. This study also reports thermal conductivity for much lower density (less than 15 mg/cm$^3$) GA than previously published studies while maintaining the robustness of the CITM technique.
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Submitted 9 April, 2024; v1 submitted 15 May, 2023;
originally announced May 2023.
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Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Authors:
Hui Fang,
Corsin Battaglia,
Carlo Carraro,
Slavomir Nemsak,
Burak Ozdol,
Jeong Seuk Kang,
Hans A. Bechtel,
Sujay B. Desai,
Florian Kronast,
Ahmet A. Unal,
Giuseppina Conti,
Catherine Conlon,
Gunnar K. Palsson,
Michael C. Martin,
Andrew M. Minor,
Charles S. Fadley,
Eli Yablonovitch,
Roya Maboudian,
Ali Javey
Abstract:
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures,…
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Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.
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Submitted 14 April, 2014; v1 submitted 15 March, 2014;
originally announced March 2014.
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Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering
Authors:
Nicola Ferralis,
Roya Maboudian,
Carlo Carraro
Abstract:
The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contras…
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The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contrast, graphene grown on polycrystalline Ni films is shown to be unpinned, i.e., to behave elastically as freestanding, despite the relatively strong interaction with the metal substrate. Moreover, it is shown that the transfer of exfoliated graphene layers onto a supporting substrate can result in pinned or unpinned layers, depending on the transfer protocol.
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Submitted 24 January, 2011;
originally announced January 2011.
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Real-Time Observation of Reactive Spreading of Gold on Silicon
Authors:
Nicola Ferralis,
Farid El Gabaly,
Andreas K. Schmid,
Roya Maboudian,
Carlo Carraro
Abstract:
The spreading of a bilayer gold film propagating outward from gold clusters, which are pinned to clean Si(111), is imaged in real time by low energy electron microscopy. By monitoring the evolution of the boundary of the gold film at fixed temperature, a linear dependence of the spreading radius on time is found. The measured spreading velocities in the temperature range of 800 < T < 930 K varie…
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The spreading of a bilayer gold film propagating outward from gold clusters, which are pinned to clean Si(111), is imaged in real time by low energy electron microscopy. By monitoring the evolution of the boundary of the gold film at fixed temperature, a linear dependence of the spreading radius on time is found. The measured spreading velocities in the temperature range of 800 < T < 930 K varied from below 100 pm/s to 50 nm/s. We show that the spreading rate is limited by the reaction to form Au silicide, and the spreading velocity is likely regulated by the reconstruction of the gold silicide that occurs at the interface.
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Submitted 18 December, 2009; v1 submitted 3 December, 2009;
originally announced December 2009.
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Evolution in Surface Morphology of Epitaxial Graphene Layers on SiC Induced by Controlled Structural Strain
Authors:
Nicola Ferralis,
Jason Kawasaki,
Roya Maboudian,
Carlo Carraro
Abstract:
The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at constant temperature affect both internal stress and film morphology. Annealing times in excess of 8-10 minutes lead to an increase in the mean square roughne…
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The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at constant temperature affect both internal stress and film morphology. Annealing times in excess of 8-10 minutes lead to an increase in the mean square roughness of SiC step edges to which graphene films are pinned, resulting in compressively stressed films at room temperature. Shorter annealing times produce minimal changes in the morphology of the terrace edges and result in nearly stress-free films upon cooling to room temperature.
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Submitted 19 November, 2008; v1 submitted 28 October, 2008;
originally announced October 2008.
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Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
Authors:
Nicola Ferralis,
Roya Maboudian,
Carlo Carraro
Abstract:
The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered light results in a significant increase in the C-C bond signal over the second order SiC Raman signal, which allows to resolve submonolayer growth, including indi…
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The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered light results in a significant increase in the C-C bond signal over the second order SiC Raman signal, which allows to resolve submonolayer growth, including individual, localized C=C dimers in a diamond-like carbon matrix for AES C/Si ratio of $\sim$3, and a strained graphene layer with delocalized electrons and Dirac single-band dispersion for AES C/Si ratio $>$6. The linear strain, measured at room temperature, is found to be compressive, which can be attributed to the large difference between the coefficients of thermal expansion of graphene and SiC. The magnitude of the compressive strain can be varied by adjusting the growth time at fixed annealing temperature.
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Submitted 19 November, 2008; v1 submitted 26 August, 2008;
originally announced August 2008.
