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FAIRSECO: An Extensible Framework for Impact Measurement of Research Software
Authors:
Deekshitha,
Siamak Farshidi,
Jason Maassen,
Rena Bakhshi,
Rob van Nieuwpoort,
Slinger Jansen
Abstract:
The growing usage of research software in the research community has highlighted the need to recognize and acknowledge the contributions made not only by researchers but also by Research Software Engineers. However, the existing methods for crediting research software and Research Software Engineers have proven to be insufficient. In response, we have developed FAIRSECO, an extensible open source…
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The growing usage of research software in the research community has highlighted the need to recognize and acknowledge the contributions made not only by researchers but also by Research Software Engineers. However, the existing methods for crediting research software and Research Software Engineers have proven to be insufficient. In response, we have developed FAIRSECO, an extensible open source framework with the objective of assessing the impact of research software in research through the evaluation of various factors. The FAIRSECO framework addresses two critical information needs: firstly, it provides potential users of research software with metrics related to software quality and FAIRness. Secondly, the framework provides information for those who wish to measure the success of a project by offering impact data. By exploring the quality and impact of research software, our aim is to ensure that Research Software Engineers receive the recognition they deserve for their valuable contributions.
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Submitted 4 June, 2024;
originally announced June 2024.
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RSMM: A Framework to Assess Maturity of Research Software Project
Authors:
Deekshitha,
Rena Bakhshi,
Jason Maassen,
Carlos Martinez Ortiz,
Rob van Nieuwpoort,
Slinger Jansen
Abstract:
The organizations and researchers producing research software face a common problem of making their software sustainable beyond funding provided by a single research project. This is addressed by research software engineers through building communities around their software, providing appropriate licensing, creating reliable and reproducible research software, making it sustainable and impactful,…
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The organizations and researchers producing research software face a common problem of making their software sustainable beyond funding provided by a single research project. This is addressed by research software engineers through building communities around their software, providing appropriate licensing, creating reliable and reproducible research software, making it sustainable and impactful, promoting, and ensuring that the research software is easy to adopt in research workflows, etc. As a result, numerous practices and guidelines exist to enhance research software quality, reusability, and sustainability. However, there is a lack of a unified framework to systematically integrate these practices and help organizations and research software developers refine their development and management processes. Our paper aims at bridging this gap by introducing a novel framework: RSMM. It is designed through systematic literature review and insights from interviews with research software project experts. In short, RSMM offers a structured pathway for evaluating and refining research software project management by categorizing 79 best practices into 17 capabilities across 4 focus areas. From assessing code quality and security to measuring impact, sustainability, and reproducibility, the model provides a complete evaluation of a research software project maturity. With RSMM, individuals as well as organizations involved in research software development gain a systematic approach to tackling various research software engineering challenges. By utilizing RSMM as a comprehensive checklist, organizations can systematically evaluate and refine their project management practices and organizational structure.
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Submitted 3 June, 2024;
originally announced June 2024.
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Giant anomalous Hall effect in epitaxial Mn$_{3.2}$Ge films with a cubic kagome structure
Authors:
J. S. R. McCoombs,
B. D. MacNeil,
V. Askarpour,
J. Myra,
H. Herdin,
M. Pula,
M. D. Robertson,
G. M. Luke,
K. L. Kavanagh,
J. Maassen,
T. L. Monchesky
Abstract:
We report on the first example of epitaxial Mn$_{3 + δ}$Ge thin films with a cubic $L1_2$ structure. The films are found to exhibit frustrated ferromagnetism with an average magnetization corresponding to 0.98$~\pm~$0.06$~μ_B$/Mn, far larger than the parasitic ferromagnetism in hexagonal Mn$_3$Ge and the partially compensated ferrimagnetism in tetragonal Mn$_3$Ge. The Hall conductivity is the larg…
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We report on the first example of epitaxial Mn$_{3 + δ}$Ge thin films with a cubic $L1_2$ structure. The films are found to exhibit frustrated ferromagnetism with an average magnetization corresponding to 0.98$~\pm~$0.06$~μ_B$/Mn, far larger than the parasitic ferromagnetism in hexagonal Mn$_3$Ge and the partially compensated ferrimagnetism in tetragonal Mn$_3$Ge. The Hall conductivity is the largest reported for the kagome magnets with a low temperature value of $σ_{xy} = 1587~$S/cm. Density functional calculations predict that a chiral antiferromagnetic structure is lower in energy than a ferromagnetic configuration in an ordered stoichiometric crystal. However, chemical disorder driven by the excess Mn in our films explains why a frustrated 120$^\circ$ spin structure is not observed. Comparisons between the magnetization and the Hall resistivity indicate that a non-coplanar spin structure contributes the Hall signal. Anisotropic magnetoresistance and planar Hall effect with hysteresis up to 14 T provides further insights into this material.
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Submitted 1 November, 2023;
originally announced November 2023.
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The Limits of Thermoelectric Performance with a Bounded Transport Distribution
Authors:
Jesse Maassen
Abstract:
With the goal of maximizing the thermoelectric (TE) figure of merit $ZT$, Mahan and Sofo [Proc. Natl. Acad. Sci. U.S.A. 93, 7436 (1996)] found that the optimal transport distribution (TD) is a delta function. Materials, however, have TDs that appear to always be finite and non-diverging. Motivated by this observation, this study focuses on deriving what is the optimal bounded TD, which is determin…
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With the goal of maximizing the thermoelectric (TE) figure of merit $ZT$, Mahan and Sofo [Proc. Natl. Acad. Sci. U.S.A. 93, 7436 (1996)] found that the optimal transport distribution (TD) is a delta function. Materials, however, have TDs that appear to always be finite and non-diverging. Motivated by this observation, this study focuses on deriving what is the optimal bounded TD, which is determined to be a boxcar function for $ZT$ and a Heaviside function for power factor. From these optimal TDs upper limits on $ZT$ and power factor are obtained; the maximum $ZT$ scales with $Σ_{\rm max} T /κ_l$, where $Σ_{\rm max}$ is the TD magnitude and $κ_l$ is the lattice thermal conductivity. These results help establish practical upper limits on the performance of TE materials and provide target TDs to guide band/scattering engineering strategies.
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Submitted 10 September, 2022;
originally announced September 2022.
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First-principles analysis of intravalley and intervalley electron-phonon scattering in thermoelectric materials
Authors:
Vahid Askarpour,
Jesse Maassen
Abstract:
Intervalley collisions, which scatter electrons from one valley or band to another, can be detrimental to thermoelectric performance in materials with multiple valleys/bands. In this study, density functional theory is used to investigate the electron-phonon scattering characteristics of three lead chalcogenides (PbS, PbSe, PbTe) and three half-Heuslers (ScNiBi, ScPdSb, ZrNiSn), which all possess…
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Intervalley collisions, which scatter electrons from one valley or band to another, can be detrimental to thermoelectric performance in materials with multiple valleys/bands. In this study, density functional theory is used to investigate the electron-phonon scattering characteristics of three lead chalcogenides (PbS, PbSe, PbTe) and three half-Heuslers (ScNiBi, ScPdSb, ZrNiSn), which all possess multiple equivalent conduction valleys, in order to characterize and analyze their intravalley/intervalley components. To elucidate what controls the degree of intravalley and intervalley transitions, the scattering rates are decomposed into the product of the phase space (a measure of how much scattering is possible) and the average electron-phonon coupling. To help guide the search for improved thermoelectric and high-conductivity materials, simple and approximate approaches are demonstrated that can be adopted to identify materials with reduced intervalley scattering, which circumvent the need for computationally-demanding electron-phonon scattering calculations. In addition, the benefits of selecting materials with large-energy zone-edge phonons are explored in the limit $\hbarω\gg k_BT$, and found to potentially suppress intervalley processes by up to an order of magnitude, leading to a 70% and 100% increase in conductivity and power factor, respectively.
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Submitted 10 September, 2022;
originally announced September 2022.
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Rotational spectroscopy $n$-propanol: $Aa$ and $Ag$ conformers
Authors:
O. Zingsheim,
J. Maßen,
H. S. P. Müller,
B. Heyne,
M. Fatima,
L. Bonah,
A. Belloche,
F. Lewen,
S. Schlemmer
Abstract:
The primary alcohol $n$-propanol (i.e., $normal$-propanol or propan-1-ol; C$_3$H$_7$OH) occurs in five different conformers: $Ga$, $Gg$, $Gg'$, $Aa$, and $Ag$. All rotational spectra of the three conformers of the $G$ family are well described, making astronomical search of their spectroscopic signatures possible, as opposed to those of the $Aa$ and $Ag$ conformers. Our goal is to facilitate the a…
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The primary alcohol $n$-propanol (i.e., $normal$-propanol or propan-1-ol; C$_3$H$_7$OH) occurs in five different conformers: $Ga$, $Gg$, $Gg'$, $Aa$, and $Ag$. All rotational spectra of the three conformers of the $G$ family are well described, making astronomical search of their spectroscopic signatures possible, as opposed to those of the $Aa$ and $Ag$ conformers. Our goal is to facilitate the astronomical detection of $Aa$ and $Ag$ conformers of $n$-propanol by characterizing their rotational spectra. We recorded the rotational spectra of $n$-propanol in the frequency domain of 18$-$505\,GHz.Additional double-modulation double-resonance (DM-DR) measurements were performed, more specifically with the goal to unambiguously assign weak transitions of the $Aa$ conformer and to verify assignments of the $Ag$ conformer. We derived a spectroscopic quantum mechanical model with experimental accuracy (with $J_\textrm{max}=70$ and $K_{a,\textrm{max}}=6$) for $Aa$ $n$-propanol. Furthermore, we unambiguously assigned transitions (with $J_\textrm{max}=69$ and $K_{a,\textrm{max}}=9$) of $Ag$ $n$-propanol; in doing so, we prove the existence of two tunneling states, $Ag^+$ and $Ag^-$. The astronomical search of all five conformers of $n$-propanol is now possible via their rotational signatures. These are applied in a companion article on the detection of $n$-propanol toward the hot molecular core Sgr B2(N2).
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Submitted 7 June, 2022;
originally announced June 2022.
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A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
Authors:
Zhuocheng Zhang,
Zehao Lin,
Pai-Ying Liao,
Vahid Askarpour,
Hongyi Dou,
Zhongxia Shang,
Adam Charnas,
Mengwei Si,
Sami Alajlouni,
**hyun Noh,
Ali Shakouri,
Haiyan Wang,
Mark Lundstrom,
Jesse Maassen,
Peide D. Ye
Abstract:
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/μm (near 20 mA/μm) is achieved in an In2O3 GAA nanoribbon FET with a channel thickness (TIO) of 3.1 nm, channel length (Lch) of 40 nm, channel width (Wch) of 30 nm and dielect…
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In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/μm (near 20 mA/μm) is achieved in an In2O3 GAA nanoribbon FET with a channel thickness (TIO) of 3.1 nm, channel length (Lch) of 40 nm, channel width (Wch) of 30 nm and dielectric HfO2 of 5 nm. The record high drain current obtained from an In2O3 FET is about one order of magnitude higher than any conventional single-channel semiconductor FETs. This extraordinary drain current and its related on-state performance demonstrate ALD In2O3 is a promising oxide semiconductor channel with great opportunities in BEOL compatible monolithic 3D integration.
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Submitted 30 April, 2022;
originally announced May 2022.
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A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
Authors:
Zehao Lin,
Mengwei Si,
Vahid Askarpour,
Chang Niu,
Adam Charnas,
Zhongxia Shang,
Yizhi Zhang,
Yaoqiao Hu,
Zhuocheng Zhang,
Pai-Ying Liao,
Kyeongjae Cho,
Haiyan Wang,
Mark Lundstrom,
Jesse Maassen,
Peide D. Ye
Abstract:
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current exceeding 10 A/mm,…
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High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current exceeding 10 A/mm, the performance of which is 2-3 times better than all known transistors with semiconductor channels. A record high transconductance of 4 S/mm is also achieved among all transistors with a planar structure. It is found that a high carrier density and high electron velocity both contribute to this remarkably high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I-V and split C-V measurements at room temperature confirm a high carrier density up to 6-7*10^13 /cm2 and a high velocity of about 10^7 cm/s. Ultra-thin oxide semiconductors, with a CNL located deep inside the conduction band, represent a promising new direction for the search of alternative channel materials for high-performance semiconductor devices.
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Submitted 30 April, 2022;
originally announced May 2022.
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Lightning: Scaling the GPU Programming Model Beyond a Single GPU
Authors:
Stijn Heldens,
Pieter Hijma,
Ben van Werkhoven,
Jason Maassen,
Rob. V. van Nieuwpoort
Abstract:
The GPU programming model is primarily aimed at the development of applications that run one GPU. However, this limits the scalability of GPU code to the capabilities of a single GPU in terms of compute power and memory capacity. To scale GPU applications further, a great engineering effort is typically required: work and data must be divided over multiple GPUs by hand, possibly in multiple nodes,…
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The GPU programming model is primarily aimed at the development of applications that run one GPU. However, this limits the scalability of GPU code to the capabilities of a single GPU in terms of compute power and memory capacity. To scale GPU applications further, a great engineering effort is typically required: work and data must be divided over multiple GPUs by hand, possibly in multiple nodes, and data must be manually spilled from GPU memory to higher-level memories.
We present Lightning: a framework that follows the common GPU programming paradigm but enables scaling to large problems with ease. Lightning supports multi-GPU execution of GPU kernels, even across multiple nodes, and seamlessly spills data to higher-level memories (main memory and disk). Existing CUDA kernels can easily be adapted for use in Lightning, with data access annotations on these kernels allowing Lightning to infer their data requirements and the dependencies between subsequent kernel launches. Lightning efficiently distributes the work/data across GPUs and maximizes efficiency by overlap** scheduling, data movement, and kernel execution when possible.
We present the design and implementation of Lightning, as well as experimental results on up to 32 GPUs for eight benchmarks and one real-world application. Evaluation shows excellent performance and scalability, such as a speedup of 57.2x over the CPU using Lighting with 16 GPUs over 4 nodes and 80 GB of data, far beyond the memory capacity of one GPU.
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Submitted 2 March, 2022; v1 submitted 11 February, 2022;
originally announced February 2022.
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Rocket: Efficient and Scalable All-Pairs Computations on Heterogeneous Platforms
Authors:
Stijn Heldens,
Pieter Hijma,
Ben van Werkhoven,
Jason Maassen,
Henri Bal,
Rob van Nieuwpoort
Abstract:
All-pairs compute problems apply a user-defined function to each combination of two items of a given data set. Although these problems present an abundance of parallelism, data reuse must be exploited to achieve good performance. Several researchers considered this problem, either resorting to partial replication with static work distribution or dynamic scheduling with full replication. In contras…
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All-pairs compute problems apply a user-defined function to each combination of two items of a given data set. Although these problems present an abundance of parallelism, data reuse must be exploited to achieve good performance. Several researchers considered this problem, either resorting to partial replication with static work distribution or dynamic scheduling with full replication. In contrast, we present a solution that relies on hierarchical multi-level software-based caches to maximize data reuse at each level in the distributed memory hierarchy, combined with a divide-and-conquer approach to exploit data locality, hierarchical work-stealing to dynamically balance the workload, and asynchronous processing to maximize resource utilization. We evaluate our solution using three real-world applications (from digital forensics, localization microscopy, and bioinformatics) on different platforms (from a desktop machine to a supercomputer). Results shows excellent efficiency and scalability when scaling to 96 GPUs, even obtaining super-linear speedups due to a distributed cache.
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Submitted 10 September, 2020;
originally announced September 2020.
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Thermoelectric calculations of ring-shaped bands in two-dimensional Bi$_2$Te$_3$, Bi$_2$Se$_3$ and Sb$_2$Te$_3$: a comparison of simple scattering approximations
Authors:
Cameron Rudderham,
Jesse Maassen
Abstract:
Materials with ring-shaped electronic bands are promising thermoelectric candidates, since their unusual dispersion shape is predicted to give large power factors. While previous calculations of these materials have relied on the assumption of a constant mean-free-path or relaxation time, recent first-principles modeling of electron-phonon scattering suggests that the scattering rates may be bette…
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Materials with ring-shaped electronic bands are promising thermoelectric candidates, since their unusual dispersion shape is predicted to give large power factors. While previous calculations of these materials have relied on the assumption of a constant mean-free-path or relaxation time, recent first-principles modeling of electron-phonon scattering suggests that the scattering rates may be better approximated by the electron density-of-states (so-called DOS scattering model). In this work, we use density functional theory to investigate single and double quintuple-layer Bi$_2$Te$_3$, Bi$_2$Se$_3$ and Sb$_2$Te$_3$, with a focus on understanding how the three aforementioned scattering approximations impact thermoelectric performance -- emphasis is placed on the DOS scattering model. The single quintuple-layer materials possess two ring-shaped valence band maxima that provide an abrupt increase in conducting channels, which benefits the power factor. Additionally, below the band edge a ring-shaped minimum, located between the two maxima, is found to further enhance the thermoelectric performance but only with the DOS scattering model. This comes from a sharp drop in the DOS, and thus scattering, just below the ring-shaped minimum. An analytic octic dispersion model is introduced and shown to qualitatively capture the observed features. The double quintuple-layer materials display notably worse thermoelectric properties, since their dispersions are significantly modified compared to the single quintuple-layer case. The benefits of ring-shaped bands are sensitive to the alignment of the two ring maxima and to the degree of ring anisotropy. Overall, single quintuple-layer Bi$_2$Te$_3$ and Bi$_2$Se$_3$ are most promising, with the DOS scattering model giving the highest power factors.
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Submitted 15 August, 2020;
originally announced August 2020.
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Impact of dimensional crossover on phonon transport in van der Waals materials: a case study of graphite and graphene
Authors:
Patrick Strongman,
Jesse Maassen
Abstract:
Using first-principles modeling, we investigate how phonon transport evolves in layered/van der Waals materials when going from 3D to 2D, or vice versa, by gradually pulling apart the atomic layers in graphite to form graphene. Focus is placed on identifying the features impacting thermal conductivity that are likely shared with other layered materials. The thermal conductivity $κ$ of graphite is…
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Using first-principles modeling, we investigate how phonon transport evolves in layered/van der Waals materials when going from 3D to 2D, or vice versa, by gradually pulling apart the atomic layers in graphite to form graphene. Focus is placed on identifying the features impacting thermal conductivity that are likely shared with other layered materials. The thermal conductivity $κ$ of graphite is found to be lower than that of graphene mainly due to changes in the phonon dispersion driven by van der Waals coupling. Specifically, as the atomic layers are brought closer together, the acoustic flexural phonons in graphene form low-energy optical flexural phonons in graphite that possess lower in-plane velocities, density-of-states and phonon occupation, thus reducing $κ$. Similar dispersion changes, and impact on thermal conductivity, can be expected in other van der Waals materials when transitioning from 2D to 3D. Our findings also indicate that the selection rules in graphene, which reduce phonon-phonon scattering and contribute to its large $κ$, effectively hold as the atomic layers are brought together to form graphite. While the selection rules do not strictly apply to graphite, in practice similar scattering behavior is displayed due in part to the weak inter-layer coupling. This suggests that van der Waals materials, in bulk 3D form, may have lower phonon-phonon scattering rates than other non-layered bulk materials.
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Submitted 30 June, 2020;
originally announced July 2020.
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Analysis of simple scattering models on the thermoelectric performance of analytical electron dispersions
Authors:
Cameron Rudderham,
Jesse Maassen
Abstract:
Recent first-principles electron-phonon scattering calculations of heavily-doped semiconductors suggest that a simple DOS scattering model, wherein the electronic scattering rates are assumed to be proportional to the density-of-states, better approximates the rigorous scattering characteristics compared to the commonly used constant relaxation-time and constant mean-free-path approximations. This…
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Recent first-principles electron-phonon scattering calculations of heavily-doped semiconductors suggest that a simple DOS scattering model, wherein the electronic scattering rates are assumed to be proportional to the density-of-states, better approximates the rigorous scattering characteristics compared to the commonly used constant relaxation-time and constant mean-free-path approximations. This work investigates how the thermoelectric properties predicted with the DOS model compare to the other two scattering models, using three analytical electron dispersions (parabolic band in 3D/2D/1D, Kane band in 3D/2D/1D, and ring-shaped quartic band in 2D). Our findings show that the scattering models can lead to significant differences, and can disagree about whether certain band structures can provide benefits. A constant relaxation-time is found to always be optimistic compared to a constant mean-free-path, while the DOS scattering model shows no such clear trend. Notably, the 1D parabolic band and 2D quartic band exhibit the highest power factors with the DOS model, resulting from a rapid decrease in density-of-states, and thus scattering - suggesting a possible strategy for improved thermoelectrics based on engineering band structures with sharp/discontinuous drops in density-of-states. The DOS scattering approximation also suggests that searches for materials with a delta function-like DOS (as a proxy to the transport distribution) or converged bands may yield limited benefits, due to the increase in scattering. This work highlights the importance of simple and accurate scattering models when rigorous ab-initio scattering calculations are not feasible.
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Submitted 22 February, 2020; v1 submitted 14 November, 2019;
originally announced November 2019.
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Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe
Authors:
Vahid Askarpour,
Jesse Maassen
Abstract:
In this study, we calculate the $T$=300 K scattering and thermoelectric transport properties of rhombohedral GeTe using first-principles modeling. The room-temperature phase of GeTe has a layered structure, with cross-plane and in-plane directions oriented parallel and perpendicular to [111], respectively. Based on rigorous electron-phonon scattering, our transport calculations reveal unusual anis…
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In this study, we calculate the $T$=300 K scattering and thermoelectric transport properties of rhombohedral GeTe using first-principles modeling. The room-temperature phase of GeTe has a layered structure, with cross-plane and in-plane directions oriented parallel and perpendicular to [111], respectively. Based on rigorous electron-phonon scattering, our transport calculations reveal unusual anisotropic properties; n-type GeTe has a cross-plane electrical conductivity that is roughly 3$\times$ larger than in-plane. p-type GeTe, however, displays opposite anisotropy with in-plane conducting roughly 2$\times$ more than cross-plane, as is expected in quasi-2D materials. The power factor shows the same anisotropy as the electrical conductivity, since the Seebeck coefficient is relatively isotropic. Interestingly, cross-plane n-GeTe shows the largest mobility and power factor approaching 500 cm$^2$/V-s and 32 $μ$W/cm-K$^2$, respectively. The thermoelectric figure-of-merit, $zT$, is enhanced as a result of this unusual anisotropy in n-GeTe since the lattice thermal conductivity is minimized along cross-plane. This decouples the preferred transport directions of electrons and phonons, leading to a threefold increase in $zT$ along cross-plane compared to in-plane. The n-type anisotropy results from high-velocity electron states formed by Ge p-orbitals that span across the interstitial region. This surprising behavior, that would allow the preferential conduction direction to be controlled by do**, could be observed in other quasi-2D materials and exploited to achieve higher-performance thermoelectrics.
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Submitted 5 June, 2019; v1 submitted 12 April, 2019;
originally announced April 2019.
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Phonon transport across a Si-Ge interface: the role of inelastic bulk scattering
Authors:
Jesse Maassen,
Vahid Askarpour
Abstract:
Understanding phonon transport across heterojunctions is important to achieve a wide range of thermal transport properties. Using the McKelvey-Shockley flux method with first-principles modeling, we theoretically investigate the phonon transport properties of a Si-Ge interface with a focus on the role of inelastic bulk phonon processes. We observe significant inelastic scattering near the interfac…
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Understanding phonon transport across heterojunctions is important to achieve a wide range of thermal transport properties. Using the McKelvey-Shockley flux method with first-principles modeling, we theoretically investigate the phonon transport properties of a Si-Ge interface with a focus on the role of inelastic bulk phonon processes. We observe significant inelastic scattering near the interface that redistributes the heat among the phonons as a result of non-equilibrium effects driven by the junction. These effects are most pronounced when the length of the junction is comparable to the average phonon mean-free-path. What controls these inelastic processes is elucidated.
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Submitted 17 December, 2018; v1 submitted 31 August, 2018;
originally announced August 2018.
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LanTraP: A code for calculating thermoelectric transport properties with the Landauer formalism
Authors:
Xufeng Wang,
Evan Witkoske,
Jesse Maassen,
Mark Lundstrom
Abstract:
A code for calculating the semi-classical thermoelectric and electronic transport properties is described. It uses the Landauer transport theory, which is equivalent to the Boltzmann theory, by introducing a central quantity-the distribution of modes. Its usage enables the so-called band-counting algorithm that can speed up the calculation and offers the potential to rapidly screen DFT band struct…
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A code for calculating the semi-classical thermoelectric and electronic transport properties is described. It uses the Landauer transport theory, which is equivalent to the Boltzmann theory, by introducing a central quantity-the distribution of modes. Its usage enables the so-called band-counting algorithm that can speed up the calculation and offers the potential to rapidly screen DFT band structures. Good agreements are found when comparing the results obtained using band-counting and established Fourier-based interpolation methods.
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Submitted 5 January, 2020; v1 submitted 22 June, 2018;
originally announced June 2018.
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Universal Behavior of the Thermoelectric Figure of Merit, zT, vs. Quality Factor
Authors:
Evan Witkoske,
Xufeng Wang,
Jesse Maassen,
Mark Lundstrom
Abstract:
To increase the performance of thermoelectric materials, the electronic parameters in the figure of merit must be improved. In this paper, we use full, numerical band structures and solve the Boltzmann equation in the relaxation time approximation using energy-dependent scattering times informed by first principles simulations. By varying the strength of the electron-phonon coupling or the lattice…
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To increase the performance of thermoelectric materials, the electronic parameters in the figure of merit must be improved. In this paper, we use full, numerical band structures and solve the Boltzmann equation in the relaxation time approximation using energy-dependent scattering times informed by first principles simulations. By varying the strength of the electron-phonon coupling or the lattice thermal conductivity, we compute the thermoelectric figure of merit, zT, vs. a generalized thermoelectric quality factor. More than a dozen different complex electronic structures are examined. Surprisingly, we find that at a given quality factor, none provides a better figure of merit than that of a material with a simple, parabolic band and acoustic deformation potential scattering. A qualitative argument for this unexpected finding is presented. This apparent universal behavior suggests that even for complex electronic band structures, the thermoelectric figure of merit depends solely on the ratio of electrical to thermal conductivity; the Seebeck coefficient and Lorenz number need not be considered. This observation should simplify the search for promising new materials, but if exceptions to this behavior can be identified, new paths for increasing thermoelectric material performance will open up.
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Submitted 13 December, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Theoretical overview of black phosphorus
Authors:
Andrey Chaves,
W. Ji,
J. Maassen,
T. Dumitrica,
T. Low
Abstract:
We review the basic optical, electronic, optoelectronic, thermoelectric and mechanical properties of few-layer black phosphorus (BP), a layered semiconductor that can be exfoliated from bulk BP, the most stable allotrope of phosphorus. The distinguishing trait of BP is its highly anisotropic crystal structure, which leads to strong optical linear dichroism, elliptical plasmonics energy surfaces, a…
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We review the basic optical, electronic, optoelectronic, thermoelectric and mechanical properties of few-layer black phosphorus (BP), a layered semiconductor that can be exfoliated from bulk BP, the most stable allotrope of phosphorus. The distinguishing trait of BP is its highly anisotropic crystal structure, which leads to strong optical linear dichroism, elliptical plasmonics energy surfaces, anisotropic electronic and thermal conductivities and elasticity. We provide tutorial-like discussion of these phenomena and their theoretical models.
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Submitted 16 October, 2017;
originally announced October 2017.
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On the Calculation of Lorenz Numbers for Complex Thermoelectric Materials
Authors:
Xufeng Wang,
Vahid Askarpour,
Jesse Maassen,
Mark Lundstrom
Abstract:
A first-principles informed approach to the calculation of Lorenz numbers for complex thermoelectric materials is presented and discussed. Example calculations illustrate the importance of using accurate band structures and energy-dependent scattering times. Results obtained by assuming that the scattering rate follows the density-of-states show that in the non-degenerate limit, Lorenz numbers bel…
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A first-principles informed approach to the calculation of Lorenz numbers for complex thermoelectric materials is presented and discussed. Example calculations illustrate the importance of using accurate band structures and energy-dependent scattering times. Results obtained by assuming that the scattering rate follows the density-of-states show that in the non-degenerate limit, Lorenz numbers below the commonly assumed lower limit of 2(kB/q)^2 can occur. The physical cause of low Lorenz numbers is explained by the shape of the transport distribution. The numerical and physical issues that need to be addressed in order to produce accurate calculations of the Lorenz number are identified. The results of this study provide a general method that should contribute to the interpretation of measurements of total thermal conductivity and to the search for materials with low Lorenz numbers, which may provide improved thermoelectric figures of merit, zT.
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Submitted 29 December, 2017; v1 submitted 10 October, 2017;
originally announced October 2017.
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Thermoelectric Band Engineering: The Role of Carrier Scattering
Authors:
Evan Witkoske,
Xufeng Wang,
Vahid Askarpour,
Mark Lundstrom,
Jesse Maassen
Abstract:
Complex electronic band structures, with multiple valleys or bands at the same or similar energies can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the…
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Complex electronic band structures, with multiple valleys or bands at the same or similar energies can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the capabilities to realistically assess the benefits and trade-offs associated with these materials. We illustrate the approach using n-type silicon as a model material and show that intervalley scattering is strong. This example shows that the convergence of valleys and bands can improve thermoelectric performance, but the magnitude of the improvement depends sensitively on the relative strengths of intra- and inter-valley electron scattering. Because anisotropy of the band structure also plays an important role, a measure of the benefit of band anisotropy in the presence of strong intervalley scattering is presented.
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Submitted 4 October, 2017; v1 submitted 16 June, 2017;
originally announced June 2017.
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Control of interlayer delocalization in 2H transition metal dichalcogenides
Authors:
Kuang-Chung Wang,
Teodor K. Stanev,
Daniel Valencia,
James Charles,
Alex Henning,
Vinod K. Sangwan,
Aritra Lahiri,
Daniel Mejia,
Prasad Sarangapani,
Michael Povolotskyi,
Aryan Afzalian,
Jesse Maassen,
Gerhard Klimeck,
Mark C. Hersam,
Lincoln J. Lauhon,
Nathaniel P. Stern,
Tillmann Kubis
Abstract:
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- ac…
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It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hop**. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence.
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Submitted 15 September, 2017; v1 submitted 6 March, 2017;
originally announced March 2017.
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Modeling quasi-ballistic transient thermal transport with spatially sinusoidal heating: a McKelvey-Shockley flux approach
Authors:
Daniel Abarbanel,
Jesse Maassen
Abstract:
Ballistic phonon effects, arising on length scales comparable to the mean-free-path, result in non-diffusive heat flow and alter the thermal properties of materials. Simple theoretical models that accurately capture non-diffusive transport physics are valuable for experimental analysis, technology design, and providing physical insight. In this work, we utilize and extend the McKelvey-Shockley (Mc…
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Ballistic phonon effects, arising on length scales comparable to the mean-free-path, result in non-diffusive heat flow and alter the thermal properties of materials. Simple theoretical models that accurately capture non-diffusive transport physics are valuable for experimental analysis, technology design, and providing physical insight. In this work, we utilize and extend the McKelvey-Shockley (McK-S) flux method, a simple and accurate framework, to investigate ballistic effects in transient phonon transport submitted to a spatially sinusoidal heating profile, simulating a transient thermal grating. We begin by extending a previous McK-S formulation to include inelastic scattering, then obtain an analytical solution in the single phonon energy case (gray approximation), and after show how this approach can readily support a full phonon dispersion and mean-free-path distribution. The results agree with experimental data and compare very well to solutions of the phonon Boltzmann transport equation in the diffusive and weakly quasi-ballistic transport regimes. We discuss the role of ballistic and non-equilibrium physics, and show that inelastic scattering is key to retrieving the heat equation solution in the diffusive limit. Overall the McK-S flux method, which takes the form of a diffusion-like equation, proves to be a simple and accurate framework that is applicable from the ballistic to diffusive transport regime.
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Submitted 20 April, 2017; v1 submitted 6 March, 2017;
originally announced March 2017.
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Thermal Transport at the Nanoscale - A Fourier's Law vs. Phonon Boltzmann Equation Study
Authors:
Jan Kaiser,
Tianli Feng,
Jesse Maassen,
Xufeng Wang,
Xiulin Ruan,
Mark Lundstrom
Abstract:
Steady-state thermal transport in nanostructures with dimensions comparable to the phonon mean-free-path is examined. Both the case of contacts at different temperatures with no internal heat generation and contacts at the same temperature with internal heat generation are considered. Fourier's Law results are compared to finite volume method solutions of the phonon Boltzmann equation in the gray…
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Steady-state thermal transport in nanostructures with dimensions comparable to the phonon mean-free-path is examined. Both the case of contacts at different temperatures with no internal heat generation and contacts at the same temperature with internal heat generation are considered. Fourier's Law results are compared to finite volume method solutions of the phonon Boltzmann equation in the gray approximation. When the boundary conditions are properly specified, results obtained using Fourier's Law without modifying the bulk thermal conductivity are in essentially exact quantitative agreement with the phonon Boltzmann equation in the ballistic and diffusive limits. The errors between these two limits are examined in this paper. For the four cases examined, the error in the apparent thermal conductivity as deduced from a correct application of Fourier's Law is less than 6%. We also find that the Fourier's Law results presented here are nearly identical to those obtained from a widely-used ballistic-diffusive approach, but analytically much simpler. Although limited to steady-state conditions with spatial variations in one dimension and to a gray model of phonon transport, the results show that Fourier's Law can be used for linear transport from the diffusive to the ballistic limit. The results also contribute to an understanding of how heat transport at the nanoscale can be understood in terms of the conceptual framework that has been established for electron transport at the nanoscale.
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Submitted 9 December, 2016; v1 submitted 3 August, 2016;
originally announced August 2016.
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Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio
Authors:
Yuchen Du,
Jesse Maassen,
Wangran Wu,
Zhe Luo,
Xianfan Xu,
Peide D. Ye
Abstract:
The Poisson's ratio of a material characterizes its response to uniaxial strain. Materials normally possess a positive Poisson's ratio - they contract laterally when stretched, and expand laterally when compressed. A negative Poisson's ratio is theoretically permissible but has not, with few exceptions of man-made bulk structures, been experimentally observed in any natural materials. Here, we sho…
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The Poisson's ratio of a material characterizes its response to uniaxial strain. Materials normally possess a positive Poisson's ratio - they contract laterally when stretched, and expand laterally when compressed. A negative Poisson's ratio is theoretically permissible but has not, with few exceptions of man-made bulk structures, been experimentally observed in any natural materials. Here, we show that the negative Poisson's ratio exists in the low-dimensional natural material black phosphorus, and that our experimental observations are consistent with first principles simulations. Through application of uniaxial strain along zigzag and armchair directions, we find that both interlayer and intralayer negative Poisson's ratios can be obtained in black phosphorus. The phenomenon originates from the puckered structure of its in-plane lattice, together with coupled hinge-like bonding configurations.
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Submitted 2 July, 2016;
originally announced July 2016.
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Modeling ballistic effects in frequency-dependent transient thermal transport using diffusion equations
Authors:
Jesse Maassen,
Mark Lundstrom
Abstract:
Understanding ballistic phonon transport effects in transient thermoreflectance experiments and explaining the observed deviations from classical theory remains a challenge. Diffusion equations are simple and computationally efficient but are widely believed to break down when the characteristic length scale is similar or less than the phonon mean-free-path. Building on our prior work, we demonstr…
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Understanding ballistic phonon transport effects in transient thermoreflectance experiments and explaining the observed deviations from classical theory remains a challenge. Diffusion equations are simple and computationally efficient but are widely believed to break down when the characteristic length scale is similar or less than the phonon mean-free-path. Building on our prior work, we demonstrate how well-known diffusion equations, namely the hyperbolic heat equation and the Cattaneo equation, can be used to model ballistic phonon effects in frequency-dependent periodic steady-state thermal transport. Our analytical solutions are found to compare excellently to rigorous numerical results of the phonon Boltzmann transport equation. The correct physical boundary conditions can be different from those traditionally used and are paramount for accurately capturing ballistic effects. To illustrate the technique, we consider a simple model problem using two different, commonly-used heating conditions. We demonstrate how this framework can easily handle detailed material properties, by considering the case of bulk silicon using a full phonon dispersion and mean-free-path distribution. This physically transparent approach provides clear insights into the nonequilibrium physics of quasi-ballistic phonon transport and its impact on thermal transport properties.
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Submitted 11 February, 2016; v1 submitted 16 August, 2015;
originally announced August 2015.
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Gate-Tunable and Thickness-dependent Electronic and Thermoelectric Transport in few-layer MoS2
Authors:
Morteza Kayyalha,
Jesse Maassen,
Mark Lundstrom,
Li Shi,
Yong P. Chen
Abstract:
Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of single-layer MoS2, whose band structure features a direct bandgap, in sharp contrast to the indirect bandgap of thicker MoS2. In this paper, we present a systematic study…
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Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of single-layer MoS2, whose band structure features a direct bandgap, in sharp contrast to the indirect bandgap of thicker MoS2. In this paper, we present a systematic study of the thickness-dependent electrical and thermoelectric properties of few-layer MoS2. We observe that the electrical conductivity () increases as we reduce the thickness of MoS2 and peaks at about two layers, with six-time larger conductivity than our thickest sample (23-layer MoS2). Using a back-gate voltage, we modulate the Fermi energy () of the sample where an increase in the Seebeck coefficient () is observed with decreasing gate voltage () towards the subthreshold (OFF state) of the device, reaching as large as in a four-layer MoS2. While previous reports have focused on a single-layer MoS2 and measured Seebeck coefficient in the OFF state, which has vanishing electrical conductivity and thermoelectric power factor (), we show that MoS2-based devices in their ON state can have as large as in the two-layer sample. The increases with decreasing thickness then drops abruptly from double-layer to single-layer MoS2, a feature we suggest as due to a change in the energy dependence of the electron mean-free-path according to our theoretical calculation. Moreover, we show that care must be taken in thermoelectric measurements in the OFF state to avoid obtaining erroneously large Seebeck coefficients when the channel resistance is very high. Our study paves the way towards a more comprehensive examination of the thermoelectric performance of two-dimensional (2D) semiconductors.
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Submitted 30 September, 2016; v1 submitted 21 May, 2015;
originally announced May 2015.
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Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Authors:
Zhe Luo,
Jesse Maassen,
Yexin Deng,
Yuchen Du,
Richard P. Garrelts,
Mark S. Lundstrom,
Peide D. Ye,
Xianfan Xu
Abstract:
Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy. The armchair and zigzag thermal conductivities are ~20 and ~40 W m$^{-1}$ K$^{-1}$ for black phosphorus films thick…
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Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy. The armchair and zigzag thermal conductivities are ~20 and ~40 W m$^{-1}$ K$^{-1}$ for black phosphorus films thicker than 15 nm, respectively, and decrease to ~10 and ~20 W m$^{-1}$ K$^{-1}$ as the film thickness is reduced, exhibiting significant anisotropy. The thermal conductivity anisotropic ratio is found to be ~2 for thick black phosphorus films and drops to ~1.5 for the thinnest 9.5-nm-thick film. Theoretical modeling reveals that the observed anisotropy is primarily related to the anisotropic phonon dispersion, whereas the intrinsic phonon scattering rates are found to be similar along the armchair and zigzag directions. Surface scattering in the black phosphorus films is shown to strongly suppress the contribution of long-mean-free-path acoustic phonons.
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Submitted 26 August, 2015; v1 submitted 20 March, 2015;
originally announced March 2015.
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A Simple Boltzmann Transport Equation for Ballistic to Diffusive Transient Heat Transport
Authors:
Jesse Maassen,
Mark Lundstrom
Abstract:
Develo** simplified, but accurate, theoretical approaches to treat heat transport on all length and time scales is needed to further enable scientific insight and technology innovation. Using a simplified form of the Boltzmann transport equation (BTE), originally developed for electron transport, we demonstrate how ballistic phonon effects and finite-velocity propagation are easily and naturally…
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Develo** simplified, but accurate, theoretical approaches to treat heat transport on all length and time scales is needed to further enable scientific insight and technology innovation. Using a simplified form of the Boltzmann transport equation (BTE), originally developed for electron transport, we demonstrate how ballistic phonon effects and finite-velocity propagation are easily and naturally captured. We show how this approach compares well to the phonon BTE, and readily handles a full phonon dispersion and energy-dependent mean-free-path. This study of transient heat transport shows i) how fundamental temperature jumps at the contacts depend simply on the ballistic thermal resistance, ii) that phonon transport at early times approach the ballistic limit in samples of any length, and iii) perceived reductions in heat conduction, when ballistic effects are present, originate from reductions in temperature gradient. Importantly, this framework can be recast exactly as the Cattaneo and hyperbolic heat equations, and we discuss how the key to capturing ballistic heat effects is to use the correct physical boundary conditions.
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Submitted 21 January, 2015;
originally announced January 2015.
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Steady-State Heat Transport: Ballistic-to-Diffusive with Fourier's Law
Authors:
Jesse Maassen,
Mark Lundstrom
Abstract:
It is generally understood that Fourier's law does not describe ballistic phonon transport, which is important when the length of a material is similar to the phonon mean-free-path. Using an approach adapted from electron transport, we demonstrate that Fourier's law and the heat equation do capture ballistic effects, including temperature jumps at ideal contacts, and are thus applicable on all len…
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It is generally understood that Fourier's law does not describe ballistic phonon transport, which is important when the length of a material is similar to the phonon mean-free-path. Using an approach adapted from electron transport, we demonstrate that Fourier's law and the heat equation do capture ballistic effects, including temperature jumps at ideal contacts, and are thus applicable on all length scales. Local thermal equilibrium is not assumed, because allowing the phonon distribution to be out-of-equilibrium is important for ballistic and quasi-ballistic transport. The key to including the non-equilibrium nature of the phonon population is to apply the proper boundary conditions to the heat equation. Simple analytical solutions are derived, showing that i) the magnitude of the temperature jumps is simply related to the material properties and ii) the observation of reduced apparent thermal conductivity physically stems from a reduction in the temperature gradient and not from a reduction in actual thermal conductivity. We demonstrate how our approach, equivalent to Fourier's law, easily reproduces results of the Boltzmann transport equation, in all transport regimes, even when using a full phonon dispersion and mean-free-path distribution.
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Submitted 15 January, 2015; v1 submitted 7 August, 2014;
originally announced August 2014.
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High-Performance Distributed Multi-Model / Multi-Kernel Simulations: A Case-Study in Jungle Computing
Authors:
Niels Drost,
Jason Maassen,
Maarten A. J. van Meersbergen,
Henri E. Bal,
F. Inti Pelupessy,
Simon Portegies Zwart,
Michael Kliphuis,
Henk A. Dijkstra,
Frank J. Seinstra
Abstract:
High-performance scientific applications require more and more compute power. The concurrent use of multiple distributed compute resources is vital for making scientific progress. The resulting distributed system, a so-called Jungle Computing System, is both highly heterogeneous and hierarchical, potentially consisting of grids, clouds, stand-alone machines, clusters, desktop grids, mobile devices…
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High-performance scientific applications require more and more compute power. The concurrent use of multiple distributed compute resources is vital for making scientific progress. The resulting distributed system, a so-called Jungle Computing System, is both highly heterogeneous and hierarchical, potentially consisting of grids, clouds, stand-alone machines, clusters, desktop grids, mobile devices, and supercomputers, possibly with accelerators such as GPUs.
One striking example of applications that can benefit greatly of Jungle Computing Systems are Multi-Model / Multi-Kernel simulations. In these simulations, multiple models, possibly implemented using different techniques and programming models, are coupled into a single simulation of a physical system. Examples include the domain of computational astrophysics and climate modeling.
In this paper we investigate the use of Jungle Computing Systems for such Multi-Model / Multi-Kernel simulations. We make use of the software developed in the Ibis project, which addresses many of the problems faced when running applications on Jungle Computing Systems. We create a prototype Jungle-aware version of AMUSE, an astrophysical simulation framework. We show preliminary experiments with the resulting system, using clusters, grids, stand-alone machines, and GPUs.
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Submitted 1 March, 2012;
originally announced March 2012.
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Fluorescence Efficiency and Visible Re-emission Spectrum of Tetraphenyl Butadiene Films at Extreme Ultraviolet Wavelengths
Authors:
V. M. Gehman,
S. R. Seibert,
K. Rielage,
A. Hime,
Y. Sun,
D. -M. Mei,
J. Maassen,
D. Moore
Abstract:
A large number of current and future experiments in neutrino and dark matter detection use the scintillation light from noble elements as a mechanism for measuring energy deposition. The scintillation light from these elements is produced in the extreme ultraviolet (EUV) range, from 60 - 200 nm. Currently, the most practical technique for observing light at these wavelengths is to surround the sci…
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A large number of current and future experiments in neutrino and dark matter detection use the scintillation light from noble elements as a mechanism for measuring energy deposition. The scintillation light from these elements is produced in the extreme ultraviolet (EUV) range, from 60 - 200 nm. Currently, the most practical technique for observing light at these wavelengths is to surround the scintillation volume with a thin film of Tetraphenyl Butadiene (TPB) to act as a fluor. The TPB film absorbs EUV photons and reemits visible photons, detectable with a variety of commercial photosensors. Here we present a measurement of the re-emission spectrum of TPB films when illuminated with 128, 160, 175, and 250 nm light. We also measure the fluorescence efficiency as a function of incident wavelength from 120 to 250 nm.
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Submitted 21 September, 2011; v1 submitted 16 April, 2011;
originally announced April 2011.
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Straining Graphene by Chemical Vapour Deposition Growth on Copper
Authors:
Victor Yu,
Eric Whiteway,
Jesse Maassen,
Michael Hilke
Abstract:
Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible to tune the uniform strain of graphene simply by changing the chemical vapor deposition growth temperature of graphene on copper. Due to the cooling of the graphene on copper system, we can induce a uniform compressive strain on graphene. The strain is analyzed by Raman spe…
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Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible to tune the uniform strain of graphene simply by changing the chemical vapor deposition growth temperature of graphene on copper. Due to the cooling of the graphene on copper system, we can induce a uniform compressive strain on graphene. The strain is analyzed by Raman spectroscopy, where a shift in the 2D peak is observed and compared to our ab initio calculations of the graphene on copper system as a function of strain.
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Submitted 6 January, 2011;
originally announced January 2011.
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Graphene spintronics: the role of ferromagnetic electrodes
Authors:
Jesse Maassen,
Wei Ji,
Hong Guo
Abstract:
We report a first principles study of spin-transport under finite bias through a graphene-ferromagnet (FM) interface, where FM=Co(111), Ni(111). The use of Co and Ni electrodes achieves spin efficiencies reaching 80% and 60%, respectively. This large spin filtering results from the materials specific interaction between graphene and the FM which destroys the linear dispersion relation of the graph…
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We report a first principles study of spin-transport under finite bias through a graphene-ferromagnet (FM) interface, where FM=Co(111), Ni(111). The use of Co and Ni electrodes achieves spin efficiencies reaching 80% and 60%, respectively. This large spin filtering results from the materials specific interaction between graphene and the FM which destroys the linear dispersion relation of the graphene bands and leads to an opening of spin-dependent energy gaps of roughly 0.4-0.5 eV at the K points. The minority spin band gap resides higher in energy than the majority spin band gap located near the Fermi level, a feature that results in large minority spin dominated currents.
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Submitted 27 September, 2010;
originally announced September 2010.
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Scattering approach to backaction in coherent nanoelectromechanical systems
Authors:
Steven D. Bennett,
Jesse Maassen,
Aashish A. Clerk
Abstract:
We present theoretical results for the backaction force noise and dam** of a mechanical oscillator whose position is measured by a mesoscopic conductor. Our scattering approach is applicable to a wide class of systems; in particular, it may be used to describe point contact position detectors far from the weak tunneling limit. We find that the backaction depends not only on the mechanical modula…
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We present theoretical results for the backaction force noise and dam** of a mechanical oscillator whose position is measured by a mesoscopic conductor. Our scattering approach is applicable to a wide class of systems; in particular, it may be used to describe point contact position detectors far from the weak tunneling limit. We find that the backaction depends not only on the mechanical modulation of transmission probabilities but also on the modulation of scattering phases, even in the absence of a magnetic field. We illustrate our general approach with several simple examples, and use it to calculate the backaction for a movable, Au atomic point contact modeled by ab initio density functional theory.
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Submitted 8 May, 2011; v1 submitted 13 September, 2010;
originally announced September 2010.
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First principles study of electronic transport through a Cu(111)|graphene junction
Authors:
Jesse Maassen,
Wei Ji,
Hong Guo
Abstract:
We report first principles investigations of the nonequilibrium transport properties of a Cu(111)|graphene interface. The Cu(111) electrode is found to induce a transmission minimum (TM) located -0.68eV below the Fermi level, a feature originating from the Cu-induced charge transfer resulting in n-type doped graphene with the Dirac point coinciding with the TM. An applied bias voltage shifts the n…
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We report first principles investigations of the nonequilibrium transport properties of a Cu(111)|graphene interface. The Cu(111) electrode is found to induce a transmission minimum (TM) located -0.68eV below the Fermi level, a feature originating from the Cu-induced charge transfer resulting in n-type doped graphene with the Dirac point coinciding with the TM. An applied bias voltage shifts the n-graphene TM relative to the pure graphene TM and leads to a distinctive peak in the differential conductance indicating the do** level, a characteristic not observed in pure graphene.
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Submitted 6 September, 2010;
originally announced September 2010.
