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Structural and electronic phase transitions driven by electric field in metastable MoS$_2$ thin flake
Authors:
C. Shang,
B. Lei,
W. Z. Zhuo,
Q. Zhang,
C. S. Zhu,
J. H. Cui,
X. G. Luo,
N. Z. Wang,
F. B. Meng,
L. K. Ma,
C. G. Zeng,
T. Wu,
Z. Sun,
F. Q. Huang,
X. H. Chen
Abstract:
Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based…
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Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based on a new developed field-effect transistor with solid ion conductor as the gate dielectric, we report a controllable structural and electronic phase transitions in metastable MoS$_2$ thin flakes driven by electric field. We found that the metastable structure of 1T$^{'''}$-MoS$_2$ thin flake can be transformed into another metastable structure of 1T$^{'}$ -type upon intercalation of lithium regulated by electric field. Moreover, the metastable 1T$^{'}$ phase persists during the cycle of intercalation and de-intercalation of lithium controlled by electric field, and the electronic properties can be reversibly manipulated with a remarkable change of resistance by four orders of magnitude from the insulating 1T$^{'}$-LiMoS$_2$ to superconducting 1T$^{'}$-MoS$_2$. Such reversible and dramatic changes in electronic properties provide intriguing opportunities for development of novel nano-devices with highly tunable characteristics under electric field.
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Submitted 25 February, 2019;
originally announced February 2019.
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Superconductivity in the metastable 1T' and 1T''' phases of MoS$_2$ crystals
Authors:
C. Shang,
Y. Q. Fang,
Q. Zhang,
N. Z. Wang,
Y. F. Wang,
Z. Liu,
B. Lei,
F. B. Meng,
L. K. Ma,
T. Wu,
Z. F. Wang,
C. G. Zeng,
F. Q. Huang,
Z. Sun,
X. H. Chen
Abstract:
Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band gap, degenerate valleys and non-zero Berry curvature. However, experimental studies of metastable 1T polytypes have been a challenge for a long time, and elect…
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Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band gap, degenerate valleys and non-zero Berry curvature. However, experimental studies of metastable 1T polytypes have been a challenge for a long time, and electronic properties are obscure due to the inaccessibility of single phase without the coexistence of 1T', 1T'' and 1T''' lattice structures, which hinder the broad applications of MoS$_2$ in future nanodevices and optoelectronic devices. Using ${K_x(H_2O)_yMoS_2}$ as the precursor, we have successfully obtained high-quality layered crystals of the metastable 1T'''-MoS$_2$ with $\sqrt{3}a\times\sqrt{3}a$ superstructure and metastable 1T'-MoS$_2$ with a$\times$2a superstructure, as evidenced by structural characterizations through scanning tunneling microscopy, Raman spectroscopy and X-ray diffraction. It is found that the metastable 1T'-MoS$_2$ is a superconductor with onset transition temperature (${T_c}$) of 4.2 K, while the metastable 1 T'''-MoS$_2$ shows either superconductivity with Tc of 5.3 K or insulating behavior, which strongly depends on the synthesis procedure. Both of the metastable polytypes of MoS$_2$ crystals can be transformed to the stable 2H phase with mild annealing at about 70 $^{\circ}$C in He atmosphere. These findings provide pivotal information on the atomic configurations and physical properties of 1T polytypes of MoS$_2$.
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Submitted 24 September, 2018;
originally announced September 2018.
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Electric-field controlled superconductor-ferromagnetic insulator transition
Authors:
L. K. Ma,
B. Lei,
N. Z. Wang,
K. S. Yang,
D. Y. Liu,
F. B. Meng,
C. Shang,
Z. L. Sun,
J. H. Cui,
C. S. Zhu,
T. Wu,
Z. Sun,
L. J. Zou,
X. H. Chen
Abstract:
How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake using solid ion conductor as the gate dielectric. By driving Li ions into and out of the (Li,Fe)OHFeSe thin flake with electric field, we obtained a dome-shaped s…
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How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake using solid ion conductor as the gate dielectric. By driving Li ions into and out of the (Li,Fe)OHFeSe thin flake with electric field, we obtained a dome-shaped superconducting region with optimal Tc ~ 43 K, which is separated by a quantum critical point from ferromagnetically insulating phase. The ferromagnetism arises from the long range order of the interstitial Fe ions expelled from the (Li,Fe)OH layers by Li injection. The device can reversibly manipulate collectively ordered electronic states and stabilize new metastable structures by electric field.
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Submitted 18 August, 2018;
originally announced August 2018.
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Revealing the hidden order in BaTi2As2O via nuclear magnetic resonance
Authors:
D. W. Song,
J. Li,
D. Zhao,
L. K. Ma,
L. X. Zheng,
S. J. Li,
L. P. Nie,
X. G. Luo,
Z. P. Yin,
T. Wu,
X. H. Chen
Abstract:
In low-dimensional metallic systems, lattice distortion is usually coupled to a density-wave-like electronic instability due to Fermi surface nesting (FSN) and strong electron-phonon coupling. However, the ordering of other electronic degrees of freedom can also occur simultaneously with the lattice distortion thus challenges the aforementioned prevailing scenario. Recently, a hidden electronic re…
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In low-dimensional metallic systems, lattice distortion is usually coupled to a density-wave-like electronic instability due to Fermi surface nesting (FSN) and strong electron-phonon coupling. However, the ordering of other electronic degrees of freedom can also occur simultaneously with the lattice distortion thus challenges the aforementioned prevailing scenario. Recently, a hidden electronic reconstruction beyond FSN was revealed in a layered metallic compound BaTi2As2O below the structural transition temperature Ts ~ 200 K. The nature of this hidden electronic instability is under strong debate. Here, by measuring the local orbital polarization through 75As nuclear magnetic resonance experiment, we observe a p-d bond order between Ti and As atoms in BaTi2As2O single crystal. Below Ts, the bond order breaks both rotational and translational symmetry of the lattice. Meanwhile, the spin-lattice relaxation measurement indicates a substantial loss of density of states and an enhanced spin fluctuation in the bond-order state. Further first-principles calculations suggest that the mechanism of the bond order is due to the coupling of lattice and nematic instabilities. Our results strongly support a bond-order driven electronic reconstruction in BaTi2As2O and shed light on the mechanism of superconductivity in this family.
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Submitted 29 June, 2018;
originally announced June 2018.
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Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal
Authors:
H. H. Wang,
X. G. Luo,
W. W. Chen,
N. Z. Wang,
B. Lei,
F. B. Meng,
C. Shang,
L. K. Ma,
T. Wu,
X. Dai,
Z. F. Wang,
X. H. Chen
Abstract:
Thermoelectric materials can be used to convert heat to electric power through the Seebeck effect. We study magneto-thermoelectric figure of merit (ZT) in three-dimensional Dirac semimetal Cd$_3$As$_2$ crystal. It is found that enhancement of power factor and reduction of thermal conductivity can be realized at the same time through magnetic field although magnetoresistivity is greatly increased.…
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Thermoelectric materials can be used to convert heat to electric power through the Seebeck effect. We study magneto-thermoelectric figure of merit (ZT) in three-dimensional Dirac semimetal Cd$_3$As$_2$ crystal. It is found that enhancement of power factor and reduction of thermal conductivity can be realized at the same time through magnetic field although magnetoresistivity is greatly increased. ZT can be highly enhanced from 0.17 to 1.1 by more than six times around 350 K under a perpendicular magnetic field of 7 Tesla. The huge enhancement of ZT by magnetic field arises from the linear Dirac band with large Fermi velocity and the large electric thermal conductivity in Cd$_3$As$_2$. Our work paves a new way to greatly enhance the thermoelectric performance in the quantum topological materials.
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Submitted 21 February, 2018;
originally announced February 2018.
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Tuning electronic properties of FeSe$_{0.5}$Te$_{0.5}$ thin flakes by a novel field effect transistor
Authors:
C. S. Zhu,
J. H. Cui,
B. Lei,
N. Z. Wang,
C. Shang,
F. B. Meng,
L. K. Ma,
X. G. Luo,
T. Wu,
Z. Sun,
X. H. Chen
Abstract:
Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped out. It is found that electron do** controlled by SIC-FET leads to a suppression of the superconducting phase, and eventually gives rise to an insulating state i…
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Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped out. It is found that electron do** controlled by SIC-FET leads to a suppression of the superconducting phase, and eventually gives rise to an insulating state in FeSe$_{0.5}$Te$_{0.5}$. During the gating process, the (001) peak in XRD patterns stays at the same position and no new diffraction peak emerges, indicating no evident Li$^+$ ions intercalation into the FeSe$_{0.5}$Te$_{0.5}$. It indicates that a systematic change of electronic properties in FeSe$_{0.5}$Te$_{0.5}$ arises from the electrostatic do** induced by the accumulation of Li$^+$ ions at the interface between FeSe$_{0.5}$Te$_{0.5}$ and solid ion conductor in the devices. It is striking that these findings are drastically different from the observation in FeSe thin flakes using the same SIC-FET, in which $T_c$ is enhanced from 8 K to larger than 40 K, then the system goes into an insulating phase accompanied by structural transitions.
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Submitted 21 January, 2017;
originally announced January 2017.
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Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric
Authors:
B. Lei,
N. Z. Wang,
C. Shang,
F. B. Meng,
L. K. Ma,
X. G. Luo,
T. Wu,
Z. Sun,
Y. Wang,
Z. Jiang,
B. H. Mao,
Z. Liu,
Y. J. Yu,
Y. B. Zhang,
X. H. Chen
Abstract:
We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with $T_c$ $\sim$ 46.6…
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We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with $T_c$ $\sim$ 46.6 K for the optimal do**, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, using solid ion conductor as a gate dielectric, the SIC-FET device can achieve much higher carrier do** in the bulk, and suit many surface sensitive experimental probes, and can stabilize novel structural phases that are inaccessible in ordinary conditions.
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Submitted 25 September, 2016;
originally announced September 2016.
