-
Magnetization reversal in Fe(001) films grown by magnetic field assisted molecular beam epitaxy
Authors:
B. Blyzniuk,
A. Dziwoki,
K. Freindl,
A. Kozioł-Rachwał,
E. Madej,
E. Młyńczak,
M. Szpytma,
D. Wilgocka-Ślezak,
J. Korecki,
N. Spiridis
Abstract:
We studied the influence of a magnetic field (MF) on epitaxial growth and magnetic properties of Fe(001) films deposited on MgO(001). Thanks to modular sample holders and a specialized manipulator in our multi-chamber ultrahigh vacuum system, the films could be deposited and annealed in an in-plane MF of 100 mT. In situ scanning tunnelling microscopy showed that MF had a strong influence on the fi…
▽ More
We studied the influence of a magnetic field (MF) on epitaxial growth and magnetic properties of Fe(001) films deposited on MgO(001). Thanks to modular sample holders and a specialized manipulator in our multi-chamber ultrahigh vacuum system, the films could be deposited and annealed in an in-plane MF of 100 mT. In situ scanning tunnelling microscopy showed that MF had a strong influence on the film morphology, and, in particular, on the structure of surface steps. The magnetic properties were studied ex situ using magneto-optic Kerr effect (MOKE) magnetometry and microscopy. We showed that the moderate in-plane magnetic field applied during growth has the visible impact on the magnetic properties. The observed angular dependence of the MOKE loops and domain structures were discussed based on a magnetization reversal model. In particular we found that magnetization reversal occurs via 90° domains and the reversal differs for the no-field and in-field grown samples, in correlation with the film morphology.
△ Less
Submitted 7 September, 2023;
originally announced September 2023.
-
Temperature-dependent spin-resolved electronic structure of EuO thin films
Authors:
Tristan Heider,
Timm Gerber,
Okan Köksal,
Markus Eschbach,
Ewa Młyńczak,
Patrick Lömker,
Pika Gospodaric,
Mathias Gehlmann,
Moritz Plötzing,
Rossitza Pentcheva,
Lukasz Plucinski,
Claus M. Schneider,
Martina Müller
Abstract:
The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory. EuO exhibits unique properties of hosting both weakly-dispersive nearly fully polarized Eu $4f$ bands, as well as O $2p$ levels indirectly exchange-split by the interaction with Eu nearest neighbors. Our temperat…
▽ More
The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory. EuO exhibits unique properties of hosting both weakly-dispersive nearly fully polarized Eu $4f$ bands, as well as O $2p$ levels indirectly exchange-split by the interaction with Eu nearest neighbors. Our temperature-dependent spin-ARPES data directly demonstrates the exchange splitting in O $2p$ and its vanishing at the Curie temperature. Our calculations with a Hubbard $U$ term reveal a complex nature of the local exchange splitting on the oxygen site and in conduction bands. We discuss the mechanisms of the indirect exchange in the O 2p levels by analyzing orbital-resolved band characters in ferromagnetic and antiferromagnetic phases. The directional effects due to spin-orbit coupling are predicted theoretically to be significant in particular in the Eu 4f band manifold. The analysis of the shape of spin-resolved spectra in the Eu $4f$ spectral region reveals signatures of hybridization with O $2p$, in agreement with the theoretical predictions. We also analyze spectral changes in the spin-integrated spectra throughout the Curie temperature and demonstrate they derive from both the magnetic phase transition and effects due to sample aging, unavoidable for this highly reactive material.
△ Less
Submitted 3 September, 2022; v1 submitted 3 September, 2018;
originally announced September 2018.
-
Kink far below the Fermi level reveals new electron-magnon scattering channel in Fe
Authors:
E. Młyńczak,
M. C. T. D. Müller,
P. Gospodarič,
T. Heider,
I. Aguilera,
G. Bihlmayer,
M. Gehlmann,
M. Jugovac,
G. Zamborlini,
C. Tusche,
S. Suga,
V. Feyer,
L. Plucinski,
C. Friedrich,
S. Blügel,
C. M. Schneider
Abstract:
Many properties of real materials can be modeled using ab initio methods within a single-particle picture. However, for an accurate theoretical treatment of excited states, it is necessary to describe electron-electron correlations including interactions with bosons: phonons, plasmons, or magnons. In this work, by comparing spin- and momentum-resolved photoemission spectroscopy measurements to man…
▽ More
Many properties of real materials can be modeled using ab initio methods within a single-particle picture. However, for an accurate theoretical treatment of excited states, it is necessary to describe electron-electron correlations including interactions with bosons: phonons, plasmons, or magnons. In this work, by comparing spin- and momentum-resolved photoemission spectroscopy measurements to many-body calculations carried out with a newly developed first-principles method, we show that a kink in the electronic band dispersion of a ferromagnetic material can occur at much deeper binding energies than expected (E_b=1.5 eV). We demonstrate that the observed spectral signature reflects the formation of a many-body state that includes a photohole bound to a coherent superposition of renormalized spin-flip excitations. The existence of such a many-body state sheds new light on the physics of the electron-magnon interaction which is essential in fields such as spintronics and Fe-based superconductivity.
△ Less
Submitted 13 May, 2019; v1 submitted 8 August, 2018;
originally announced August 2018.
-
Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
Authors:
Slavomír Nemšák,
Mathias Gehlmann,
Cheng-Tai Kuo,
Shih-Chieh Lin,
Christoph Schlueter,
Ewa Mlynczak,
Tien-Lin Lee,
Lukasz Plucinski,
Hubert Ebert,
Igor Di Marco,
Ján Minár,
Claus M. Schneider,
Charles S. Fadley
Abstract:
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal do** produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5%…
▽ More
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal do** produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
△ Less
Submitted 12 September, 2018; v1 submitted 19 January, 2018;
originally announced January 2018.
-
Localized segregation of gold in ultra-thin Fe films on Au(001)
Authors:
Pika Gospodaric,
Ewa Mlynczak,
Markus Eschbach,
Mathias Gehlmann,
Giovanni Zamborlini,
Vitaly Feyer,
Lukasz Plucinski,
Claus M. Schneider
Abstract:
The growth of up to 10 monolayer-thick Fe films on a Au(001) surface was investigated during deposition at room temperature and during annealing using low-energy electron diffraction and x-ray photoemission spectroscopy as well as locally with low-energy electron microscopy and photoemission electron microscopy. The growth proceeds with a submonolayer of Au segregating to the surface of Fe, which…
▽ More
The growth of up to 10 monolayer-thick Fe films on a Au(001) surface was investigated during deposition at room temperature and during annealing using low-energy electron diffraction and x-ray photoemission spectroscopy as well as locally with low-energy electron microscopy and photoemission electron microscopy. The growth proceeds with a submonolayer of Au segregating to the surface of Fe, which is in agreement with previous studies. Annealing was found to be critical for the presence of Au on the Fe surface. Our findings show that Au segregation proceeds by the formation of cracks in the Fe film, starting at the annealing temperature of 190 °C, through which Au diffuses towards the surface. We explain the localized Au segregation with a shadowing effect due to the oblique deposition geometry. As a result, an Fe film with significantly improved roughness, but covered with a Au overlayer, is obtained. This study shows the necessity to employ spatially-resolved techniques to fully understand the growth modes of the layered epitaxial systems.
△ Less
Submitted 15 February, 2018; v1 submitted 18 May, 2017;
originally announced May 2017.
-
Direct observation of the band gap transition in atomically thin ReS$_2$
Authors:
Mathias Gehlmann,
Irene Aguilera,
Gustav Bihlmayer,
Slavomír Nemšák,
Philipp Nagler,
Pika Gospodarič,
Giovanni Zamborlini,
Markus Eschbach,
Vitaliy Feyer,
Florian Kronast,
Ewa Młyńczak,
Tobias Korn,
Lukasz Plucinski,
Christian Schüller,
Stefan Blügel,
Claus M. Schneider
Abstract:
ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic…
▽ More
ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS$_2$ using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS$_2$ are - contrary to assumptions in recent literature - significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing a significantly increased effective electron mass in single-layer crystals. We also find that only bilayer ReS$_2$ has a direct band gap. Our results establish bilayer ReS$_2$ as a advantageous building block for two-dimensional devices and van der Waals heterostructures.
△ Less
Submitted 14 February, 2017;
originally announced February 2017.
-
Fermi surface manipulation by external magnetic field demonstrated for a prototypical ferromagnet
Authors:
E. Młyńczak,
M. Eschbach,
S. Borek,
J. Minár,
J. Braun,
I. Aguilera,
G. Bihlmayer,
S. Döring,
M. Gehlmann,
P. Gospodarič,
S. Suga,
L. Plucinski,
S. Blügel,
H. Ebert,
C. M. Schneider
Abstract:
We consider the details of the near-surface electronic band structure of a prototypical ferromagnet, Fe(001). Using high resolution angle-resolved photoemission spectroscopy we demonstrate openings of the spin-orbit induced electronic band gaps near the Fermi level. The band gaps and thus the Fermi surface can be manipulated by changing the remanent magnetization direction. The effect is of the or…
▽ More
We consider the details of the near-surface electronic band structure of a prototypical ferromagnet, Fe(001). Using high resolution angle-resolved photoemission spectroscopy we demonstrate openings of the spin-orbit induced electronic band gaps near the Fermi level. The band gaps and thus the Fermi surface can be manipulated by changing the remanent magnetization direction. The effect is of the order of $Δ$E = 100 meV and $Δ\text {k} = 0.1\,\textÅ^{-1}$. We show that the observed dispersions are dominated by the bulk band structure. First-principles calculations and one-step photoemission calculations suggest that the effect is related to changes in the electronic ground state, rather than caused by the photoemission process itself. The symmetry of the effect indicates that the observed electronic bulk states are influenced by the presence of the surface, which might be understood as related to a Rashba-type effect. By pinpointing the regions in the electronic band structure where the switchable band gaps occur, we demonstrate the significance of spin-orbit interaction even for elements as light as 3d ferromagnets.
△ Less
Submitted 24 June, 2016;
originally announced June 2016.
-
$\mbox{Bi}_{1}\mbox{Te}_{1}$: a dual topological insulator
Authors:
Markus Eschbach,
Martin Lanius,
Chengwang Niu,
Ewa Młyńczak,
Pika Gospodarič,
Jens Kellner,
Peter Schüffelgen,
Mathias Gehlmann,
Sven Döring,
Elmar Neumann,
Martina Luysberg,
Gregor Mussler,
Lukasz Plucinski,
Markus Morgenstern,
Detlev Grützmacher,
Gustav Bihlmayer,
Stefan Blügel,
Claus M. Schneider
Abstract:
A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non t…
▽ More
A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non trivial time-reversal symmetry-driven character of $\mathbb{Z}_{2}=(0;001)$ and additionally a mirror-symmetry induced mirror Chern number of $n_{\cal M}=-2$, which indicates that $\mathrm{Bi_{1}Te_{1}}$ is both a weak topological insulator and a topological crystalline insulator. The coexistence of the two phenomena preordains distinct crystal planes to host topological surface states that are protected by the respective symmetries. The surface perpendicular to the stacking direction is the 'dark' surface of the weak topological insulator, while hosting mirror-symmetry protected surface states along the $\bar{Γ\mathrm{M}}$ direction at non-time-reversal invariant momenta points. We confirm the stacking sequence of our MBE-grown $\mathrm{Bi_{1}Te_{1}}$ thin films by X-ray diffraction and transmission electron microscopy, and find indications of the topological crystalline and weak topological character in the surface electronic spin structure by spin- and angle-resolved photoemission spectroscopy, which nicely match the results from density functional theory.
△ Less
Submitted 29 April, 2016;
originally announced April 2016.
-
Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_2$ bulk crystals
Authors:
Mathias Gehlmann,
Gustav Bihlmayer,
Irene Aguilera,
Ewa Mlynczak,
Markus Eschbach,
Sven Döring,
Pika Gospodaric,
Stefan Cramm,
Beata Kardynal,
Lukasz Plucinski,
Stefan Blügel,
Claus M. Schneider
Abstract:
Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS…
▽ More
Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS$_2$ bulk crystals. Using spin- and angle-resolved photoemission spectroscopy (ARPES) we directly observed a spin-polarization of more than 65% for distinct valleys in the electronic band structure. By additionally evaluating the probing depth of our method we find that these valence band states at the $\overline{\text{K}}$ point in the Brillouin zone are close to fully polarized for the individual atomic trilayers of MoS$_2$, which is confirmed by our density functional theory calculations. Furthermore, we show that this spin-layer locking leads to the observation of highly spin-polarized bands in ARPES since these states are almost completely confined within two dimensions. Our findings prove that these highly desired properties of MoS$_2$ can be accessed without thinning it down to the monolayer limit.
△ Less
Submitted 13 October, 2015;
originally announced October 2015.
-
Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures
Authors:
Markus Eschbach,
Ewa Mlynczak,
Jens Kellner,
Jörn Kampmeier,
Martin Lanius,
Elmar Neumann,
Christian Weyrich,
Mathias Gehlmann,
Pika Gospodaric,
Sven Döring,
Gregor Mussler,
Nataliya Demarina,
Martina Luysberg,
Gustav Bihlmayer,
Thomas Schäpers,
Lukasz Plucinski,
Stefan Blügel,
Markus Morgenstern,
Claus M. Schneider,
Detlev Grützmacher
Abstract:
3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct…
▽ More
3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and $\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper $\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way of exploring other exotic quantum phenomena in the near future.
△ Less
Submitted 9 October, 2015;
originally announced October 2015.
-
Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$
Authors:
Jens Kellner,
Markus Eschbach,
Jörn Kampmeier,
Martin Lanius,
Ewa Mlynczak,
Gregor Mussler,
Bernhard Holländer,
Lukasz Plucinski,
Marcus Liebmann,
Detlev Grützmacher,
Claus M. Schneider,
Markus Morgenstern
Abstract:
In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te…
▽ More
In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ thin films with $x=0.94$ prepared by molecular beam epitaxy and transferred in ultrahigh vacuum from the molecular beam epitaxy system to the photoemission setup matches this condition. The Dirac point is within 10 meV around the Fermi level and we do not observe any bulk bands intersecting the Fermi level.
△ Less
Submitted 6 October, 2015; v1 submitted 15 June, 2015;
originally announced June 2015.
-
Growth and electronic and magnetic structure of iron oxide films on Pt(111)
Authors:
N. Spiridis,
D. Wilgocka-Ślȩzak,
K. Freindl,
B. Figarska,
T. Giela,
E. Młyńczak,
B. Strzelczyk,
M. Zajac,
J. Korecki
Abstract:
Ultrathin (111)-oriented polar iron oxide films were grown on a Pt(111) single crystal either by the reactive deposition of iron or oxidation of metallic iron monolayers. These films were characterized using low energy electron diffraction, scanning tunneling microscopy and conversion electron Mossbauer spectroscopy. The reactive deposition of Fe led to the island growth of Fe3O4, in which the ele…
▽ More
Ultrathin (111)-oriented polar iron oxide films were grown on a Pt(111) single crystal either by the reactive deposition of iron or oxidation of metallic iron monolayers. These films were characterized using low energy electron diffraction, scanning tunneling microscopy and conversion electron Mossbauer spectroscopy. The reactive deposition of Fe led to the island growth of Fe3O4, in which the electronic and magnetic properties of the bulk material were modulated by superparamagnetic size effects for thicknesses below 2 nm, revealing specific surface and interface features. In contrast, the oxide films with FeO stoichiometry, which could be stabilized as thick as 4 nm under special preparation conditions, had electronic and magnetic properties that were very different from their bulk counterpart, wüstite. Unusual long range magnetic order appeared at room temperature for thicknesses between three and ten monolayers, the appearance of which requires severe structural modification from the rock-salt structure.
△ Less
Submitted 30 November, 2011; v1 submitted 25 November, 2011;
originally announced November 2011.
-
Layer-by-layer epitaxial growth of polar FeO(111) thin films on MgO(111)
Authors:
Jacek Gurgul,
Ewa Młyńczak,
Nika Spiridis,
Józef Korecki
Abstract:
We report on the structural properties of epitaxial FeO layers grown by molecular beam epitaxy on MgO(111). The successful stabilization of polar FeO films as thick as 16 monolayers (ML), obtained by deposition and subsequent oxidation of single Fe layers, is presented. FeO/MgO(111) thin films were chemically and structurally characterized using low-energy electron diffraction, Auger electron spec…
▽ More
We report on the structural properties of epitaxial FeO layers grown by molecular beam epitaxy on MgO(111). The successful stabilization of polar FeO films as thick as 16 monolayers (ML), obtained by deposition and subsequent oxidation of single Fe layers, is presented. FeO/MgO(111) thin films were chemically and structurally characterized using low-energy electron diffraction, Auger electron spectroscopy and conversion electron Mossbauer spectroscopy (CEMS). Detailed in situ CEMS measurements as a function of the film thickness demonstrated a size-effect-induced evolution of the hyperfine parameters, with the thickest film exhibiting the bulk-wustite hyperfine pattern. Ex situ CEMS investigation confirmed the magnetic ordering of the wustite thin film phase at liquid nitrogen temperature.
△ Less
Submitted 14 November, 2011;
originally announced November 2011.
