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Automated detection and map** of crystal tilt using thermal diffuse scattering in transmission electron microscopy
Authors:
Mauricio Cattaneo,
Knut Müller-Caspary,
Juri Barthel,
Katherine E. Mac Arthur,
Nicolas Gauquelin,
Marta Lipinska-Chwalek,
Johan Verbeeck,
Leslie J. Allen,
Rafal E. Dunin-Borkowski
Abstract:
Quantitative interpretation of transmission electron microscopy (TEM) data of crystalline specimens often requires the accurate knowledge of the local crystal orientation. A method is presented which exploits momentum-resolved scanning TEM (STEM) data to determine the local mistilt from a major zone axis. It is based on a geometric analysis of Kikuchi bands within a single diffraction pattern, yie…
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Quantitative interpretation of transmission electron microscopy (TEM) data of crystalline specimens often requires the accurate knowledge of the local crystal orientation. A method is presented which exploits momentum-resolved scanning TEM (STEM) data to determine the local mistilt from a major zone axis. It is based on a geometric analysis of Kikuchi bands within a single diffraction pattern, yielding the centre of the Laue circle. Whereas the approach is not limited to convergent illumination, it is here developed using unit-cell averaged diffraction patterns corresponding to high-resolution STEM settings. In simulation studies, an accuracy of approximately 0.1mrad is found. The method is implemented in automated software and applied to crystallographic tilt and in-plane rotation map** in two experimental cases. In particular, orientation maps of high-Mn steel and an epitaxially grown La$_{\text{0.7}}$Sr$_{\text{0.3}}$MnO$_{\text{3}}$-SrTiO$_{\text{3}}$ interface are presented. The results confirm the estimates of the simulation study and indicate that tilt map** can be performed consistently over a wide field of view with diameters well above 100nm at unit cell real space sampling.
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Submitted 20 June, 2024;
originally announced June 2024.
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Revealing the impact of polystyrene-functionalization of Au octahedral nanocrystals of different sizes on formation and structure of mesocrystals
Authors:
Dmitry Lapkin,
Shweta Singh,
Felizitas Kirner,
Sebastian Sturm,
Dameli Assalauova,
Alexandr Ignatenko,
Thomas Wiek,
Thomas Gemming,
Axel Lubk,
Knut Müller-Caspary,
Azat Khadiev,
Dmitri Novikov,
Elena V. Sturm,
Ivan A. Vartanyants
Abstract:
The self-assembly of anisotropic nanocrystals (stabilized by organic cap** molecules) with pre-selected composition, size, and shape allows for the creation of nanostructured materials with unique structures and features. For such a material, the shape and packing of the individual nanoparticles play an important role. This work presents a synthesis procedure for ω-thiol-terminated polystyrene (…
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The self-assembly of anisotropic nanocrystals (stabilized by organic cap** molecules) with pre-selected composition, size, and shape allows for the creation of nanostructured materials with unique structures and features. For such a material, the shape and packing of the individual nanoparticles play an important role. This work presents a synthesis procedure for ω-thiol-terminated polystyrene (PS-SH) functionalized gold nanooctahedra of variable size (edge length 37, 46, 58, and 72 nm). The impact of polymer chain length (Mw: 11k, 22k, 43k, and 66k g/mol) on the growth of colloidal crystals (e.g. mesocrystals) and their resulting crystal structure is investigated. Small-angle X-ray scattering (SAXS) and scanning transmission electron microscopy (STEM) methods provide a detailed structural examination of the self-assembled faceted mesocrystals based on octahedral gold nanoparticles of different size and surface functionalization. Three-dimensional angular X-ray cross-correlation analysis (AXCCA) enables high-precision determination of the superlattice structure and relative orientation of nanoparticles in mesocrystals. This approach allows us to perform non-destructive characterization of mesocrystalline materials and reveals their structure with resolution down to the nanometer scale.
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Submitted 26 June, 2023;
originally announced June 2023.
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Lattice reconstruction in MoSe$_2$-WSe$_2$ heterobilayers synthesized by chemical vapor deposition
Authors:
Zhijie Li,
Farsane Tabataba-Vakili,
Shen Zhao,
Anna Rupp,
Ismail Bilgin,
Ziria Herdegen,
Benjamin März,
Kenji Watanabe,
Takashi Taniguchi,
Gabriel R. Schleder,
Anvar S. Baimuratov,
Efthimios Kaxiras,
Knut Müller-Caspary,
Alexander Högele
Abstract:
Vertical van der Waals heterostructures of semiconducting transition metal dichalcogenides realize moiré systems with rich correlated electron phases and moiré exciton phenomena. For material combinations with small lattice mismatch and twist angles as in MoSe$_2$-WSe$_2$, however, lattice reconstruction eliminates the canonical moiré pattern and instead gives rise to arrays of periodically recons…
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Vertical van der Waals heterostructures of semiconducting transition metal dichalcogenides realize moiré systems with rich correlated electron phases and moiré exciton phenomena. For material combinations with small lattice mismatch and twist angles as in MoSe$_2$-WSe$_2$, however, lattice reconstruction eliminates the canonical moiré pattern and instead gives rise to arrays of periodically reconstructed nanoscale domains and mesoscopically extended areas of one atomic registry. Here, we elucidate the role of atomic reconstruction in MoSe$_2$-WSe$_2$ heterostructures synthesized by chemical vapor deposition. With complementary imaging down to the atomic scale, simulations, and optical spectroscopy methods we identify the coexistence of moiré-type cores and extended moiré-free regions in heterostacks with parallel and antiparallel alignment. Our work highlights the potential of chemical vapor deposition for applications requiring laterally extended heterosystems of one atomic registry or exciton-confining heterostack arrays.
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Submitted 10 May, 2023; v1 submitted 15 December, 2022;
originally announced December 2022.
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Inverse Multislice Ptychography by Layer-wise Optimisation and Sparse Matrix Decomposition
Authors:
Arya Bangun,
Oleh Melnyk,
Benjamin März,
Benedikt Diederichs,
Alexander Clausen,
Dieter Weber,
Frank Filbir,
Knut MÜller-Caspary
Abstract:
We propose algorithms based on an optimisation method for inverse multislice ptychography in, e.g. electron microscopy. The multislice method is widely used to model the interaction between relativistic electrons and thick specimens. Since only the intensity of diffraction patterns can be recorded, the challenge in applying inverse multislice ptychography is to uniquely reconstruct the electrostat…
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We propose algorithms based on an optimisation method for inverse multislice ptychography in, e.g. electron microscopy. The multislice method is widely used to model the interaction between relativistic electrons and thick specimens. Since only the intensity of diffraction patterns can be recorded, the challenge in applying inverse multislice ptychography is to uniquely reconstruct the electrostatic potential in each slice up to some ambiguities. In this conceptual study, we show that a unique separation of atomic layers for simulated data is possible when considering a low acceleration voltage. We also introduce an adaptation for estimating the illuminating probe. For the sake of practical application, we finally present slice reconstructions using experimental 4D scanning transmission electron microscopy (STEM) data.
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Submitted 8 May, 2022;
originally announced May 2022.
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Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications
Authors:
Nikolaos Aspiotis,
Katrina Morgan,
Benjamin März,
Knut Müller-Caspary,
Martin Ebert,
Chung-Che Huang,
Daniel W. Hewak,
Sayani Majumdar,
Ioannis Zeimpekis
Abstract:
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptak…
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This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm^2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 10^7. Additionally, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at +-5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications.
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Submitted 19 March, 2022;
originally announced March 2022.
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Live processing of momentum-resolved STEM data for first moment imaging and ptychography
Authors:
Achim Strauch,
Dieter Weber,
Alexander Clausen,
Anastasiia Lesnichaia,
Arya Bangun,
Benjamin März,
Feng Jiao Lyu,
Qing Chen,
Andreas Rosenauer,
Rafal Dunin-Borkowski,
Knut Müller-Caspary
Abstract:
A reformulated implementation of single-sideband ptychography enables analysis and display of live detector data streams in 4D scanning transmission electron microscopy (STEM) using the LiberTEM open-source platform. This is combined with live first moment and further virtual STEM detector analysis. Processing of both real experimental and simulated data shows the characteristics of this method wh…
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A reformulated implementation of single-sideband ptychography enables analysis and display of live detector data streams in 4D scanning transmission electron microscopy (STEM) using the LiberTEM open-source platform. This is combined with live first moment and further virtual STEM detector analysis. Processing of both real experimental and simulated data shows the characteristics of this method when data is processed progressively, as opposed to the usual offline processing of a complete dataset. In particular, the single side band method is compared to other techniques such as the enhanced ptychographic engine in order to ascertain its capability for structural imaging at increased specimen thickness. Qualitatively interpretable live results are obtained also if the sample is moved, or magnification is changed during the analysis. This allows live optimization of instrument as well as specimen parameters during the analysis. The methodology is especially expected to improve contrast- and dose-efficient in-situ imaging of weakly scattering specimens, where fast live feedback during the experiment is required.
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Submitted 17 August, 2021; v1 submitted 25 June, 2021;
originally announced June 2021.
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Extraordinary high room-temperature carrier mobility in graphene-WSe$_2$ heterostructures
Authors:
L. Banszerus,
T. Sohier,
A. Ep**,
F. Winkler,
F. Libisch,
F. Haupt,
K. Watanabe,
T. Taniguchi,
K. Müller-Caspary,
N. Marzari,
F. Mauri,
B. Beschoten,
C. Stampfer
Abstract:
High carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier mobility. Van der Waals heterostructures formed by graphene and hexagonal boron nitride (hBN) already outperform all known materials in terms of room temperature mobi…
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High carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier mobility. Van der Waals heterostructures formed by graphene and hexagonal boron nitride (hBN) already outperform all known materials in terms of room temperature mobility. Here, we show that the mobility of today's best graphene/hBN devices can be surpassed by more than a factor of three by heterostructures formed by tungsten diselenide (WSe$_2$), graphene and hBN, which can have mobilities as high as 350,000 cm$^2$/(Vs) at room temperature, and resistivities as low as 15 Ohm. The resistivity of these devices shows a much weaker temperature dependence than the one of graphene on any other known substrate. The origin of this behaviour points to modified acoustic phonon bands in graphene and questions our understanding of electron-phonon scattering in van der Waals heterostructures.
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Submitted 20 September, 2019;
originally announced September 2019.
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Spectroscopic coincidence experiments in transmission electron microscopy
Authors:
Daen Jannis,
Knut Müller-Caspary,
Armand Béché,
Andreas Oelsner,
Johan Verbeeck
Abstract:
We demonstrate the feasibility of coincidence measurements in a conventional transmission electron microscope, revealing the temporal correlation between electron energy loss spectroscopy (EELS) and energy dispersive X-ray (EDX) spectroscopy events. We make use of a delay line detector with picosecond time resolution attached to a modified EELS spectrometer. We demonstrate that coincidence between…
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We demonstrate the feasibility of coincidence measurements in a conventional transmission electron microscope, revealing the temporal correlation between electron energy loss spectroscopy (EELS) and energy dispersive X-ray (EDX) spectroscopy events. We make use of a delay line detector with picosecond time resolution attached to a modified EELS spectrometer. We demonstrate that coincidence between both events, related to the excitation and de-excitation of atoms in a crystal, provides added information not present in the individual EELS or EDX spectra. In particular, the method provides EELS with a significantly suppressed or even removed background, overcoming the many difficulties with conventional parametric background fitting as it uses no assumptions on the shape of the background, requires no user input and does not suffer from counting noise originating from the background signal. This is highly attractive, especially when low concentrations of elements need to be detected in a matrix of other elements.
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Submitted 13 February, 2019;
originally announced February 2019.
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Demonstration of a 2x2 programmable phase plate for electrons
Authors:
Jo Verbeeck,
Armand Béché,
Knut Müller-Caspary,
Giulio Guzzinati,
Minh Anh Luong,
Martien Den Hertog
Abstract:
First results on the experimental realisation of a 2x2 programmable phase plate for electrons are presented. The design consists of an array of electrostatic einzel lenses that influence the phase of electron waves passing through 4 separately controllable aperture holes. This functionality is demonstrated in a conventional transmission electron microscope operating at 300~kV and results are in ve…
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First results on the experimental realisation of a 2x2 programmable phase plate for electrons are presented. The design consists of an array of electrostatic einzel lenses that influence the phase of electron waves passing through 4 separately controllable aperture holes. This functionality is demonstrated in a conventional transmission electron microscope operating at 300~kV and results are in very close agreement with theoretical predictions. The dynamic creation of a set of electron probes with different phase symmetry is demonstrated, thereby bringing adaptive optics in TEM one step closer to reality. The limitations of the current design and how to overcome these in the future are discussed. Simulations show how further evolved versions of the current proof of concept might open new and exciting application prospects for beam sha** and aberration correction.
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Submitted 30 November, 2017;
originally announced November 2017.
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Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy
Authors:
P. S. Sokolov,
M. Yu. Petrov,
T. Mehrtens,
K. Müller-Caspary,
A. Rosenauer,
D. Reuter,
A. D. Wieck
Abstract:
A microscopic study of the individual annealed (In,Ga)As/GaAs quantum dots is done by means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor component distribution and the chemical composition of the (In,Ga)As alloy are extracted from the microscopy images. The image processing allows for the reconstruction of the strain-induced electric-field gradients at the in…
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A microscopic study of the individual annealed (In,Ga)As/GaAs quantum dots is done by means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor component distribution and the chemical composition of the (In,Ga)As alloy are extracted from the microscopy images. The image processing allows for the reconstruction of the strain-induced electric-field gradients at the individual atomic columns extracting thereby the magnitude and asymmetry parameter of the nuclear quadrupole interaction. Nuclear magnetic resonance absorption spectra are analyzed for parallel and transverse mutual orientations of the electric-field gradient and a static magnetic field.
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Submitted 31 August, 2015;
originally announced August 2015.
