Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design
Authors:
Rafaella Fiorelli,
Mona Rajabali,
Roberto Méndez-Romero,
Akash Kumar,
Artem Litvinenko,
Teresa Serrano-Gotarredona,
Farshad Moradi,
Johan Åkerman,
Bernabé Linares-Barranco,
Eduardo Peralías
Abstract:
As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs…
▽ More
As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO, and its available output power in the range of 2-10 GHz at various bias currents.
△ Less
Submitted 16 April, 2024;
originally announced April 2024.
