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Electronic Properties of Single Prussian Blue Analog Nanocrystals Determined by Conductive-AFM
Authors:
Hugo Therssen,
Laure Catala,
Sandra Mazérat,
Talal Mallah,
Dominique Vuillaume,
Thierry Mélin,
Stéphane Lenfant
Abstract:
We report a study of the electron transport (ET) properties at the nanoscale (conductive-AFM noted C-AFM thereafter) of individual Prussian Blue Analog (PBA) cubic nanocrystals (NCs) of CsCo(III)Fe(II), with size between 15 and 50 nm deposited on HOPG. We demonstrate that these PBA NCs feature an almost size independent electron injection barriers of 0.41 +/- 0.02 eV and 0.27 +/- 0.03 eV at the Cs…
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We report a study of the electron transport (ET) properties at the nanoscale (conductive-AFM noted C-AFM thereafter) of individual Prussian Blue Analog (PBA) cubic nanocrystals (NCs) of CsCo(III)Fe(II), with size between 15 and 50 nm deposited on HOPG. We demonstrate that these PBA NCs feature an almost size independent electron injection barriers of 0.41 +/- 0.02 eV and 0.27 +/- 0.03 eV at the CsCo(III)Fe(II)/HOPG and CsCo(III)Fe(II)/C-AFM tip, respectively, and an intrinsic electron conductivity evolving from largely dispersed between ca. 5E-4 and 2E-2 S/cm without a clear correlation with the nanocrystal size. The conductivity values measured on individual nanocrystals are higher by up to 5 decades than those reported on PBA films.
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Submitted 31 October, 2023;
originally announced November 2023.
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Positional and Rotational Molecular Degrees of Freedom in a Metal-Organic Surface Alloy: the Copper-Fullerene System and its Multiple Structural Phases
Authors:
María Alfonso Moro,
Yannick Dappe,
Sylvie Godey,
Thierry Mélin,
César González,
Valérie Guisset,
Philippe David,
Benjamin Canals,
Nicolas Rougemaille,
Johann Coraux
Abstract:
Mixing two chemical elements at the surface of a substrate is known to produce rich phase diagrams of surface alloys. Here, we extend the concept of surface alloying to the case where the two constituent elements are not both atoms, but rather one atom (copper) and one molecule (fullerene). When deposited at room temperature on a Cu(111) surface, fullerenes intermix with the metal substrate. Surpr…
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Mixing two chemical elements at the surface of a substrate is known to produce rich phase diagrams of surface alloys. Here, we extend the concept of surface alloying to the case where the two constituent elements are not both atoms, but rather one atom (copper) and one molecule (fullerene). When deposited at room temperature on a Cu(111) surface, fullerenes intermix with the metal substrate. Surprisingly, 10 distinct copper-fullerene surface alloys are found to coexist. The structure of these alloys, i.e. their composition and commensurability relationship with the substrate, is resolved using scanning tunneling microscopy and density functional theory calculations. This diversity in the alloying process is associated to the multiple possibilities a fullerene can bind to the Cu surface. The molecules are indeed found to have in-plane and out-of-plane positional degree of freedom: the molecular alloys have elastic in-plane properties and can buckle. In addition, the molecules can rotate on their binding sites, conferring extra degrees of freedom to the system. We introduce a competing-interaction energy model, parametrized against the results of the \textit{ab initio} calculations, that describes well all the phases we observe experimentally.
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Submitted 18 January, 2023;
originally announced January 2023.
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Conductance Switching of Azobenzene-Based Self-Assembled Monolayers on Cobalt Probed by UHV Conductive-AFM
Authors:
Louis Thomas,
Imane Arbouch,
David Guérin,
Xavier Wallart,
Colin van Dyck,
Thierry Mélin,
Jérôme Cornil,
Dominique Vuillaume,
Stéphane Lenfant
Abstract:
We report the formation of self-assembled monolayers of a molecular photoswitch (azobenzene-bithiophene derivative, AzBT) on cobalt via a thiol covalent bond. We study the electrical properties of the molecular junctions formed with the tip of a conductive atomic force microscope under ultra-high vacuum. The statistical analysis of the current-voltage curves shows two distinct states of the molecu…
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We report the formation of self-assembled monolayers of a molecular photoswitch (azobenzene-bithiophene derivative, AzBT) on cobalt via a thiol covalent bond. We study the electrical properties of the molecular junctions formed with the tip of a conductive atomic force microscope under ultra-high vacuum. The statistical analysis of the current-voltage curves shows two distinct states of the molecule conductance, suggesting the coexistence of both the trans and cis azobenzene isomers on the surface. The cis isomer population (trans isomer) increases (decreases) upon UV light irradiation. The situation is reversed under blue light irradiation. The experiments are confronted to first-principle calculations performed on the molecular junctions with the Non-Equilibrium Green's Function formalism combined with Density Functional Theory (NEGF/DFT). The theoretical results consider two different molecular orientations for each isomer. Whereas the orientation does not affect the conductance of the trans isomer, it significantly modulates the conductance of the cis isomer and the resulting conductance ON/OFF ratio of the molecular junction. This helps identifying the molecular orientation at the origin of the observed current differences between the trans and cis forms. The ON state is associated to the trans isomer irrespective of its orientation in the junction, while the OFF state is identified as a cis isomer with its azobenzene moiety folded upward with respect to the bithiophene core. The experimental and calculated ON/OFF conductance ratios have a similar order of magnitude. This conductance ratio seems reasonable to make these Co-AzBT molecular junctions a good test-bed to further explore the relationship between the spin-polarized charge transport, the molecule conformation and the molecule-Co spinterface.
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Submitted 31 March, 2021;
originally announced March 2021.
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Conductance switching at the nanoscale of diarylethene derivatives self-assembled monolayers on La$_{0.7}$Sr$_{0.3}$MnO$_3$
Authors:
L. Thomas,
D. Guerin,
B. Quinard,
E. Jacquet,
R. Mattana,
P. Seneor,
D. Vuillaume,
T. Melin,
S. Lenfant
Abstract:
We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La0.7Sr0.3MnO3 (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements sh…
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We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La0.7Sr0.3MnO3 (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements show that the electrical conductance of LSMO/DDA is about 3 decades below that of the bare LSMO substrate. Moreover, the presence of the DDA SAM suppresses the known conductance switching of the LSMO substrate that is induced by mechanical and/or bias constraints during C-AFM measurements. A partial light-induced conductance switching between the open and closed forms of the DDA is observed for the LSMO/DDA/C-AFM tip molecular junctions (closed/open conductance ratio of about 8). We show that, in the case of long-time exposition to UV light, this feature can be masked by a non-reversible decrease (a factor of about 15) of the conductance of the LSMO electrode.
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Submitted 21 March, 2020;
originally announced March 2020.
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Beyond the electric-dipole approximation in simulations of X-ray absorption spectroscopy: Lessons from relativistic theory
Authors:
Nanna Holmgaard List,
Timothé Romain Léo Melin,
Martin van Horn,
Trond Saue
Abstract:
We present three schemes to go beyond the electric-dipole approximation in X-ray absorption spectroscopy calculations within a four-component relativistic framework. The first is based on the full semi-classical light-matter interaction operator, and the two others on a truncated interaction within Coulomb gauge (velocity representation) and multipolar gauge (length representation). We generalize…
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We present three schemes to go beyond the electric-dipole approximation in X-ray absorption spectroscopy calculations within a four-component relativistic framework. The first is based on the full semi-classical light-matter interaction operator, and the two others on a truncated interaction within Coulomb gauge (velocity representation) and multipolar gauge (length representation). We generalize the derivation of multipolar gauge to an arbitrary expansion point and show that the potentials corresponding to different expansion point are related by a gauge transformation, provided the expansion is not truncated. This suggests that the observed gauge-origin dependence in multipolar gauge is more than just a finite-basis set effect. The simplicity of the relativistic formalism enables arbitrary-order implementations of the truncated interactions, with and without rotational averaging, allowing us to test their convergence behavior numerically by comparison to the full formulation. We confirm the observation that the oscillator strength of the electric-dipole allowed ligand K-edge transition of TiCl$_4$, when calculated to second order in the wave vector, become negative, but also show that inclusion of higher-order contributions allows convergence to the result obtained using the full light-matter interaction. However, at higher energies, the slow convergence of such expansions becomes dramatic and renders such approaches at best impractical. When going beyond the electric-dipole approximation, we therefore recommend the use of the full light-matter interaction.
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Submitted 4 April, 2020; v1 submitted 29 January, 2020;
originally announced January 2020.
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Physical Study by Surface Characterizations of Sarin Sensor on the Basis of Chemically Functionalized Silicon Nanoribbon Field Effect Transistor
Authors:
K. Smaali,
D. Guerin,
V. Passi,
L. Ordronneau,
A. Carella,
T. Melin,
E. Dubois,
D. Vuillaume,
J. P. Simonato,
S. Lenfant
Abstract:
Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated with changes in the current-voltage characteristics of the devices. KPFM measurements on FETs allow (i) to investigate the contact potential difference (CPD) di…
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Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated with changes in the current-voltage characteristics of the devices. KPFM measurements on FETs allow (i) to investigate the contact potential difference (CPD) distribution of the polarized device as function of the gate voltage and the exposure to OP traces and, (ii) to analyze the CPD hysteresis associated to the presence of mobile ions on the surface. The CPD measured by KPFM on the silicon nanoribbon was corrected due to side capacitance effects in order to determine the real quantitative surface potential. Comparison with macroscopic Kelvin probe (KP) experiments on larger surfaces was carried out. These two approaches were quantitatively consistent. An important increase of the CPD values (between + 399 mV and + 302 mV) was observed after the OP sensor grafting, corresponding to a decrease of the work function, and a weaker variation after exposure to OP (between - 14 mV and - 61 mV) was measured. Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. The OP molecules were essentially localized on the Si-NR confirming effectiveness and selectivity of the OP sensor. A prototype was exposed to Sarin vapors and succeeded in the detection of low vapor concentrations (40 ppm).
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Submitted 20 May, 2016;
originally announced May 2016.
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Characterization of ion/electron beam induced deposition of electrical contacts at the sub-μm scale
Authors:
D. Brunel,
D. Troadec,
D. Hourlier,
D. Deresmes,
M Zdrojek,
T. Mélin
Abstract:
We investigate the fabrication of electrical contacts using ion- and electron-beam induced deposition of platinum at the sub-μm scale. Halos associated with the metal surface decoration are characterized electrically in the 0.05-2 μm range using transport measurements, conducting atomic force microscopy and Kelvin probe microscopy. In contrast with IBID, EBID electrodes exhibit weakly conductive h…
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We investigate the fabrication of electrical contacts using ion- and electron-beam induced deposition of platinum at the sub-μm scale. Halos associated with the metal surface decoration are characterized electrically in the 0.05-2 μm range using transport measurements, conducting atomic force microscopy and Kelvin probe microscopy. In contrast with IBID, EBID electrodes exhibit weakly conductive halos at the sub-μm scale, and can thus be used to achieve resist-free electrical contacts for transport measurements at the sub-μm scale. Four-point transport measurements using μm-spaced EBID contacts are provided in the case of a multiwalled carbon nanotube.
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Submitted 10 March, 2011;
originally announced March 2011.
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Electric charge enhancements in carbon nanotubes: Theory and experiments
Authors:
Zhao Wang,
Mariusz Zdrojek,
Thierry Melin,
Michel Devel
Abstract:
We present a detailed study of the static enhancement effects of electric charges in micron-length single-walled carbon nanotubes, using theoretically an atomic charge-dipole model and experimentally electrostatic force microscopy. We demonstrate that nanotubes exhibit at their ends surprisingly weak charge enhancements which decrease with the nanotube length and increase with the nanotube radiu…
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We present a detailed study of the static enhancement effects of electric charges in micron-length single-walled carbon nanotubes, using theoretically an atomic charge-dipole model and experimentally electrostatic force microscopy. We demonstrate that nanotubes exhibit at their ends surprisingly weak charge enhancements which decrease with the nanotube length and increase with the nanotube radius. A quantitative agreement is obtained between theory and experiments.
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Submitted 16 September, 2009;
originally announced September 2009.
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Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin Force Microscopy
Authors:
David Brunel,
Dominique Deresmes,
Thierry Melin
Abstract:
We use Kelvin Force Microscopy (KFM) to study the electrostatic properties of single-walled Carbon Nanotube Field Effect Transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete phenomenological determination of the averaging effects associated with the KFM probe side capacitances,…
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We use Kelvin Force Microscopy (KFM) to study the electrostatic properties of single-walled Carbon Nanotube Field Effect Transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete phenomenological determination of the averaging effects associated with the KFM probe side capacitances, and thus, to obtain KFM measurements with quantitative character. The value of the electrostatic lever arm of the CNTFET is determined from KFM measurements, and found in agreement with transport measurements based on Coulomb blockade.
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Submitted 4 June, 2009;
originally announced June 2009.
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Localization and delocalization of charges injected in DNA
Authors:
Thomas Heim,
Thierry Melin,
Dominique Deresmes,
Dominique Vuillaume
Abstract:
The electrical properties of DNA molecules are investigated by charge injection and electric force microscopy experiments. Prior to injection, DNA molecules exhibit a weak positively charged state. We probe the electrical behaviour of DNA by measuring the localized or delocalized character of the DNA charge states upon injection of excess charges. We show that injected charges do not delocalize…
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The electrical properties of DNA molecules are investigated by charge injection and electric force microscopy experiments. Prior to injection, DNA molecules exhibit a weak positively charged state. We probe the electrical behaviour of DNA by measuring the localized or delocalized character of the DNA charge states upon injection of excess charges. We show that injected charges do not delocalize for overstretched DNA prepared by a receding meniscus technique, while the adjunction of spermidine during the deposition leads to relaxed DNA molecules exhibiting a charge delocalization over microns. The interplay between charge localization/delocalization and deposition techniques may explain that transport behaviors ranging from insulating to conductive have been reported for DNA deposited on surfaces.
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Submitted 3 September, 2004;
originally announced September 2004.
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Dispersive charge transport along the surface of an insulating layer observed by Electrostatic Force Microscopy
Authors:
J. S. Lambert,
G. De Loubens,
C. Guthmann,
M. Saint-Jean,
T. Melin
Abstract:
We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic Force Microscope. During the time range accessible to our measurements (i.e. $t=1\sim1000\un{s}$), the transport of electrons is mediated by traps in the oxid…
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We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic Force Microscope. During the time range accessible to our measurements (i.e. $t=1\sim1000\un{s}$), the transport of electrons is mediated by traps in the oxide. We measure the mobility of electrons in the "surface" states of the silicon oxide layer and show the dispersive nature of their motion. It is also demonstrated that the saturation of deep oxide traps strongly enhance the transport of electrons under lateral electric field.
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Submitted 18 December, 2003;
originally announced December 2003.
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Fermi-Edge Singularities in AlxGa1-xAs Quantum Wells : Extrinsic Versus Many-Body Scattering Processes
Authors:
T. Melin,
F. Laruelle
Abstract:
A Fano resonance mechanism is evidenced to control the formation of optical Fermi-edge singularities in multi-subband systems such as remotely doped AlxGa1-xAs heterostructures. Using Fano parameters, we probe the physical nature of the interaction between Fermi-sea electrons and empty conduction subbands. We show that processes of extrinsic origin like alloy-disorder prevail easily at 2D over m…
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A Fano resonance mechanism is evidenced to control the formation of optical Fermi-edge singularities in multi-subband systems such as remotely doped AlxGa1-xAs heterostructures. Using Fano parameters, we probe the physical nature of the interaction between Fermi-sea electrons and empty conduction subbands. We show that processes of extrinsic origin like alloy-disorder prevail easily at 2D over multiple diffusions from charged valence holes expected by many-body scenarios.
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Submitted 29 June, 2000;
originally announced June 2000.
