-
Two-stage growth for highly ordered epitaxial C$_{60}$ films on Au(111)
Authors:
Alexandra B. Tully,
Rysa Greenwood,
MengXing Na,
Vanessa King,
Erik Mårsell,
Yuran Niu,
Evangelos Golias,
Arthur K. Mills,
Giorgio Levy de Castro,
Matteo Michiardi,
Darius Menezes,
Jiabin Yu,
Sergey Zhdanovich,
Andrea Damascelli,
David J. Jones,
Sarah A. Burke
Abstract:
As an organic semiconductor and a prototypical acceptor molecule in organic photovoltaics, C$_{60}$ has broad relevance to the world of organic thin film electronics. Although highly uniform C$_{60}$ thin films are necessary to conduct spectroscopic analysis of the electronic structure of these C$_{60}$-based materials, reported C$_{60}$ films show a relatively low degree of order beyond a monolay…
▽ More
As an organic semiconductor and a prototypical acceptor molecule in organic photovoltaics, C$_{60}$ has broad relevance to the world of organic thin film electronics. Although highly uniform C$_{60}$ thin films are necessary to conduct spectroscopic analysis of the electronic structure of these C$_{60}$-based materials, reported C$_{60}$ films show a relatively low degree of order beyond a monolayer. Here, we develop a generalizable two-stage growth technique that consistently produces single-domain C$_{60}$ films of controllable thicknesses, using Au(111) as an epitaxially well-matched substrate. We characterize the films using low-energy electron diffraction, low-energy electron microscopy, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). We report highly oriented epitaxial film growth of C$_{60}$/Au(111) from 1 monolayer (ML) up to 20 ML films. The high-quality of the C$_{60}$ thin films enables the direct observation of the electronic dispersion of the HOMO and HOMO-1 bands via ARPES without need for small spot sizes. Our results indicate a path for the growth of organic films on metallic substrates with long-range ordering.
△ Less
Submitted 15 April, 2024;
originally announced April 2024.
-
Molecularly Resolved Electronic Landscapes of Differing Acceptor-Donor Interface Geometries
Authors:
Katherine A. Cochrane,
Tanya S. Roussy,
Bingkai Yuan,
Gary Tom,
Erik Mårsell,
Sarah A. Burke
Abstract:
Organic semiconductors are a promising class of materials for numerous electronic and optoelectronic applications, including solar cells. However, these materials tend to be extremely sensitive to the local environment and surrounding molecular geometry, causing the energy levels near boundaries and interfaces essential to device function to differ from those of the bulk. Scanning Tunneling Micros…
▽ More
Organic semiconductors are a promising class of materials for numerous electronic and optoelectronic applications, including solar cells. However, these materials tend to be extremely sensitive to the local environment and surrounding molecular geometry, causing the energy levels near boundaries and interfaces essential to device function to differ from those of the bulk. Scanning Tunneling Microscopy and Spectroscopy (STM/STS) has the ability to examine both the structural and electronic properties of these interfaces on the molecular and submolecular scale. Here we investigate the prototypical acceptor/donor system PTCDA/CuPc using sub-molecularly resolved pixel-by-pixel STS to demonstrate the importance of subtle changes in interface geometry in prototypical solar cell materials. PTCDA and CuPc were sequentially deposited on NaCl bilayers to create lateral heterojunctions that were decoupled from the underlying substrate. Donor and acceptor states were observed to shift in opposite directions suggesting an equilibrium charge transfer between the two. Narrowing of the gap energy compared to isolated molecules on the same surface are indicative of the influence of the local dielectric environment. Further, we find that the electronic state energies of both acceptor and donor are strongly dependent on the ratio and positioning of both molecules in larger clusters. This molecular-scale structural dependence of the electronic states of both interfacial acceptor and donor has significant implications for device design where level alignment strongly correlates to device performance.
△ Less
Submitted 28 March, 2023;
originally announced March 2023.
-
Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
Authors:
P. Nigge,
A. C. Qu,
É. Lantagne-Hurtubise,
E. Mårsell,
S. Link,
G. Tom,
M. Zonno,
M. Michiardi,
M. Schneider,
S. Zhdanovich,
G. Levy,
U. Starke,
C. Gutiérrez,
D. Bonn,
S. A. Burke,
M. Franz,
A. Damascelli
Abstract:
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transpor…
▽ More
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T. This enables the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications.
△ Less
Submitted 22 November, 2019; v1 submitted 1 February, 2019;
originally announced February 2019.
-
Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization
Authors:
Erik Mårsell,
Emil Boström,
Anne Harth,
Arthur Losquin,
Chen Guo,
Yu-Chen Cheng,
Eleonora Lorek,
Sebastian Lehmann,
Gustav Nylund,
Martin Stankovski,
Cord L. Arnold,
Miguel Miranda,
Kimberly A. Dick,
Johan Mauritsson,
Claudio Verdozzi,
Anne L'Huillier,
Anders Mikkelsen
Abstract:
We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission el…
▽ More
We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Develo** \textit{ab-initio GW} calculations of 1st to 3rd order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While the electric-field enhancement due to the semiconductor/vacuum interface has a similar effect for all NW segments, the 2nd and 3rd order multiphoton transitions in the band structure of WZ InAs are highly anisotropic, in contrast to ZB InAs. As the crystal phase of NWs can be precisely and reliably tailored, our findings opens up for new semiconductor optoelectronics with controllable nanoscale emission of electrons through vacuum or dielectric barriers.
△ Less
Submitted 29 January, 2019;
originally announced January 2019.
-
Phase Control of Attosecond Pulses in a Train
Authors:
Chen Guo,
Anne Harth,
Stefanos Carlström,
Yu-Chen Cheng,
Sara Mikaelsson,
Erik Mårsell,
Christoph Heyl,
Miguel Miranda,
Mathieu Gisselbrecht,
Mette B. Gaarde,
Kenneth J. Schafer,
Anders Mikkelsen,
Johan Mauritsson,
Cord L. Arnold,
Anne L'Huillier
Abstract:
Ultrafast processes in matter can be captured and even controlled by using sequences of few-cycle optical pulses, which need to be well characterized, both in amplitude and phase. The same degree of control has not yet been achieved for few-cycle extreme ultraviolet pulses generated by high-order harmonic generation in gases, with duration in the attosecond range. Here, we show that by varying the…
▽ More
Ultrafast processes in matter can be captured and even controlled by using sequences of few-cycle optical pulses, which need to be well characterized, both in amplitude and phase. The same degree of control has not yet been achieved for few-cycle extreme ultraviolet pulses generated by high-order harmonic generation in gases, with duration in the attosecond range. Here, we show that by varying the spectral phase and carrier-envelope phase (CEP) of a high-repetition rate laser, using dispersion in glass, we achieve a high degree of control of the relative phase and CEP between consecutive attosecond pulses. The experimental results are supported by a detailed theoretical analysis based upon the semiclassical three-step model for high-order harmonic generation.
△ Less
Submitted 14 January, 2019;
originally announced January 2019.
-
Photoemission electron microscopy of localized surface plasmons in silver nanostructures at telecommunication wavelengths
Authors:
Erik Mårsell,
Esben W. Larsen,
Cord L. Arnold,
Hongxing Xu,
Johan Mauritsson,
Anders Mikkelsen
Abstract:
We image the field enhancement at Ag nanostructures using femtosecond laser pulses with a center wavelength of 1.55 micrometer. Imaging is based on non-linear photoemission observed in a photoemission electron microscope (PEEM). The images are directly compared to ultra violet PEEM and scanning electron microscopy (SEM) imaging of the same structures. Further, we have carried out atomic scale scan…
▽ More
We image the field enhancement at Ag nanostructures using femtosecond laser pulses with a center wavelength of 1.55 micrometer. Imaging is based on non-linear photoemission observed in a photoemission electron microscope (PEEM). The images are directly compared to ultra violet PEEM and scanning electron microscopy (SEM) imaging of the same structures. Further, we have carried out atomic scale scanning tunneling microscopy (STM) on the same type of Ag nanostructures and on the Au substrate. Measuring the photoelectron spectrum from individual Ag particles shows a larger contribution from higher order photoemission process above the work function threshold than would be predicted by a fully perturbative model, consistent with recent results using shorter wavelengths. Investigating a wide selection of both Ag nanoparticles and nanowires, field enhancement is observed from 30% of the Ag nanoparticles and from none of the nanowires. No laser-induced damage is observed of the nanostructures neither during the PEEM experiments nor in subsequent SEM analysis. By direct comparison of SEM and PEEM images of the same nanostructures, we can conclude that the field enhancement is independent of the average nanostructure size and shape. Instead, we propose that the variations in observed field enhancement could originate from the wedge interface between the substrate and particles electrically connected to the substrate.
△ Less
Submitted 6 March, 2015;
originally announced March 2015.
