Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors
Authors:
Sven Mägdefessel,
Riccardo Mori,
Niels Sorgenfrei,
Ulrich Parzefall
Abstract:
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective do** concentration. However, for highly irradiated sensors, the measured data differs significantly from the usual shape which makes the extraction of the afore mentioned parameters less precise to not possible. We present a…
▽ More
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective do** concentration. However, for highly irradiated sensors, the measured data differs significantly from the usual shape which makes the extraction of the afore mentioned parameters less precise to not possible. We present an explanation for the obseved frequency dependence and based on that, a method to extract the desired sensor parameters.
△ Less
Submitted 23 January, 2023;
originally announced January 2023.
Characterization of Passive CMOS Strip Sensors
Authors:
Leena Diehl,
Marta Baselga,
Ingrid Maria Gregor,
Marc Hauser,
Tomasz Hemperek,
Jan Cedric Hönig,
Karl Jakobs,
Sven Mägdefessel,
Ulrich Parzefall,
Arturo Rodriguez,
Surabhi Sharma,
Dennis Sperlich,
Liv Wiik-Fuchs,
Tianyang Wang
Abstract:
Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are…
▽ More
Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.
△ Less
Submitted 1 April, 2022;
originally announced April 2022.
The ABC130 barrel module prototy** programme for the ATLAS strip tracker
Authors:
Luise Poley,
Craig Sawyer,
Sagar Addepalli,
Anthony Affolder,
Bruno Allongue,
Phil Allport,
Eric Anderssen,
Francis Anghinolfi,
Jean-François Arguin,
Jan-Hendrik Arling,
Olivier Arnaez,
Nedaa Alexandra Asbah,
Joe Ashby,
Eleni Myrto Asimakopoulou,
Naim Bora Atlay,
Ludwig Bartsch,
Matthew J. Basso,
James Beacham,
Scott L. Beaupré,
Graham Beck,
Carl Beichert,
Laura Bergsten,
Jose Bernabeu,
Prajita Bhattarai,
Ingo Bloch
, et al. (224 additional authors not shown)
Abstract:
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000…
▽ More
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototy** programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototy** program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
△ Less
Submitted 7 September, 2020;
originally announced September 2020.
