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Enhancement of the spin transfer torque efficiency in magnetic STM junctions
Authors:
Krisztián Palotás,
Gábor Mándi,
László Szunyogh
Abstract:
We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin (3D-WKB) approach combined with electronic structure calculations using first principles density functional theory. As an application, we analyze the STM contra…
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We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin (3D-WKB) approach combined with electronic structure calculations using first principles density functional theory. As an application, we analyze the STM contrast inversion of the charge current above the Fe/W(110) surface depending on the bias voltage, tip-sample distance and relative magnetization orientation between the sample and an iron tip. For the spin transfer torque (STT) vector we find that its in-plane component is generally larger than the out-of-plane component, and we identify a longitudinal spin current component, which, however, does not contribute to the torque. Our results suggest that the torque-current relationship in magnetic STM junctions follows the power law rather than a linear function. Consequently, we show that the ratio between the STT and the spin-polarized charge current is not constant, and more importantly, it can be tuned by the bias voltage, tip-sample distance and magnetization rotation. We find that the STT efficiency can be enhanced by about a factor of seven by selecting a proper bias voltage. Thus, we demonstrate the possible enhancement of the STT efficiency in magnetic STM junctions, which can be exploited in technological applications. We discuss our results in view of the indirect measurement of the STT above the Fe/W(110) surface reported by Krause et al. in Phys. Rev. Lett. 107, 186601 (2011).
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Submitted 16 August, 2016; v1 submitted 5 March, 2016;
originally announced March 2016.
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Chen's derivative rule revisited: Role of tip-orbital interference in STM
Authors:
G. Mándi,
K. Palotás
Abstract:
On the occasion of its 25th anniversary, we revise Chen's derivative rule for electron tunneling [C.J. Chen, Phys. Rev. B 42, 8841 (1990)] for the purpose of computationally efficient simulations of scanning tunneling microscopy (STM) based on first principles electronic structure data. The revised model allows the weighting of tunneling matrix elements of different tip orbital characters by an ar…
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On the occasion of its 25th anniversary, we revise Chen's derivative rule for electron tunneling [C.J. Chen, Phys. Rev. B 42, 8841 (1990)] for the purpose of computationally efficient simulations of scanning tunneling microscopy (STM) based on first principles electronic structure data. The revised model allows the weighting of tunneling matrix elements of different tip orbital characters by an arbitrary energy independent choice or based on energy dependent weighting coefficients obtained by an expansion of the tip single electron wavefunctions/density of states projected onto the tip apex atom. Tip-orbital interference in the STM junction is included in the model by construction and can be analyzed quantitatively. As a further advantage, arbitrary tip geometrical orientations are included in the revised model by rotating the coordinate system of the tip apex using Euler angles and redefining the weighting coefficients of the tunneling matrix elements. We demonstrate the reliability of the model by applying it to two functionalized surfaces of recent interest where quantum interference effects play an important role in the STM imaging process: N-doped graphene and a magnetic Mn2H complex on the Ag(111) surface. We find that the proposed tunneling model is 25 times faster than the Bardeen method concerning computational time, while maintaining good agreement. Our results show that the electronic structure of the tip has a considerable effect on STM images, and the Tersoff-Hamann model does not always provide sufficient results in view of quantum interference effects. For both studied surfaces we highlight the importance of interference between s and pz tip orbitals that can cause a significant contrast change in the STM images.
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Submitted 31 March, 2015;
originally announced March 2015.
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What is the orientation of the tip in a scanning tunneling microscope?
Authors:
Gábor Mándi,
Gilberto Teobaldi,
Krisztián Palotás
Abstract:
We introduce a statistical correlation analysis method to obtain information on the local geometry and orientation of the tip used in scanning tunneling microscopy (STM) experiments based on large scale simulations. The key quantity is the relative brightness correlation of constant-current topographs between experimental and simulated data. This correlation can be analyzed statistically for a lar…
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We introduce a statistical correlation analysis method to obtain information on the local geometry and orientation of the tip used in scanning tunneling microscopy (STM) experiments based on large scale simulations. The key quantity is the relative brightness correlation of constant-current topographs between experimental and simulated data. This correlation can be analyzed statistically for a large number of modeled tip orientations and geometries. Assuming a stable tip during the STM scans and based on the correlation distribution, it is possible to determine the tip orientations that are most likely present in an STM experiment, and exclude other orientations. This is especially important for substrates such as highly oriented pyrolytic graphite (HOPG) since its STM contrast is strongly tip dependent, which makes interpretation and comparison of STM images very challenging. We illustrate the applicability of our method considering the HOPG surface in combination with tungsten tip models of two different apex geometries and 18144 different orientations. We calculate constant-current profiles along the $<1\bar{1}00>$ direction of the HOPG(0001) surface in the $|V|\le 1$ V bias voltage range, and compare them with experimental data. We find that a blunt tip model provides better correlation with the experiment for a wider range of tip orientations and bias voltages than a sharp tip model. Such a combination of experiments and large scale simulations opens up the way for obtaining more detailed information on the structure of the tip apex and more reliable interpretation of STM data in the view of local tip geometry effects.
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Submitted 26 January, 2015;
originally announced January 2015.
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Contrast stability and "stripe" formation in Scanning Tunnelling Microscopy imaging of highly oriented pyrolytic graphite: The role of STM-tip orientations
Authors:
Gábor Mándi,
Gilberto Teobaldi,
Krisztián Palotás
Abstract:
Highly oriented pyrolytic graphite (HOPG) is an important substrate in many technological applications and is routinely used as a standard in Scanning Tunnelling Microscopy (STM) calibration, which makes the accurate interpretation of the HOPG STM contrast of great fundamental and applicative importance. We demonstrate by STM simulations based on electronic structure obtained from first principles…
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Highly oriented pyrolytic graphite (HOPG) is an important substrate in many technological applications and is routinely used as a standard in Scanning Tunnelling Microscopy (STM) calibration, which makes the accurate interpretation of the HOPG STM contrast of great fundamental and applicative importance. We demonstrate by STM simulations based on electronic structure obtained from first principles that the relative local orientation of the STM-tip apex with respect to the HOPG substrate has a considerable effect on the HOPG STM contrast. Importantly for experimental STM analysis of HOPG, the simulations indicate that local tip-rotations maintaining a major contribution of the $d_{3z^2-r^2}$ tip-apex state to the STM current affect only the secondary features of the HOPG STM contrast resulting in "stripe" formation and leaving the primary contrast unaltered. Conversely, tip-rotations leading to enhanced contributions from $m\ne 0$ tip-apex electronic states can cause a triangular-hexagonal change in the primary contrast. We also report a comparison of two STM simulation models with experiments in terms of bias-voltage-dependent STM topography brightness correlations, and discuss our findings for the HOPG(0001) surface in combination with tungsten tip models of different sharpnesses and terminations.
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Submitted 6 October, 2014;
originally announced October 2014.
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STM contrast inversion of the Fe(110) surface
Authors:
Gábor Mándi,
Krisztián Palotás
Abstract:
We extend the orbital-dependent electron tunneling model implemented within the three-dimensional (3D) Wentzel-Kramers-Brillouin (WKB) atom-superposition approach to simulate spin-polarized scanning tunneling microscopy (SP-STM) above magnetic surfaces. The tunneling model is based on the electronic structure data of the magnetic tip and surface obtained from first principles. Applying our method,…
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We extend the orbital-dependent electron tunneling model implemented within the three-dimensional (3D) Wentzel-Kramers-Brillouin (WKB) atom-superposition approach to simulate spin-polarized scanning tunneling microscopy (SP-STM) above magnetic surfaces. The tunneling model is based on the electronic structure data of the magnetic tip and surface obtained from first principles. Applying our method, we analyze the orbital contributions to the tunneling current, and study the nature of atomic contrast reversals occurring on constant-current SP-STM images above the Fe(110) surface. We find an interplay of orbital-dependent tunneling and spin-polarization effects responsible for the contrast inversion, and we discuss its dependence on the bias voltage, on the tip-sample distance, and on the tip orbital composition.
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Submitted 24 February, 2014; v1 submitted 18 September, 2013;
originally announced September 2013.
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Arbitrary tip orientation in STM simulations: 3D WKB theory and application to W(110)
Authors:
Gábor Mándi,
Norbert Nagy,
Krisztián Palotás
Abstract:
We extend the orbital-dependent electron tunneling model implemented within the three-dimensional (3D) Wentzel-Kramers-Brillouin (WKB) atom-superposition approach for simulating scanning tunneling microscopy (STM) by including arbitrary tip orientations. The orientation of the tip is characterized by a local coordinate system centered on the tip apex atom obtained by a rotation with respect to the…
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We extend the orbital-dependent electron tunneling model implemented within the three-dimensional (3D) Wentzel-Kramers-Brillouin (WKB) atom-superposition approach for simulating scanning tunneling microscopy (STM) by including arbitrary tip orientations. The orientation of the tip is characterized by a local coordinate system centered on the tip apex atom obtained by a rotation with respect to the sample coordinate system. The rotation is described by the Euler angles. Applying our method, we highlight the role of the real-space shape of the electron orbitals involved in the tunneling, and analyze the convergence and the orbital contributions of the tunneling current above the W(110) surface depending on the orientation of a model tungsten tip. We also simulate STM images at constant-current condition, and find that their quality depends very much on the tip orientation. Some orientations result in protrusions on the images that do not occur above W atoms. The presence of such apparent atom positions makes it difficult to identify the exact position of surface atoms. It is suggested that this tip orientation effect should be considered at the evaluation of experimental STM images on other surfaces as well. The presented computationally efficient tunneling model could prove to be useful for obtaining more information on the local tip geometry and orientation by comparing STM experiments to a large number of simulations with systematically varied tip orientations.
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Submitted 16 July, 2013;
originally announced July 2013.
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Orbital dependent electron tunneling within the atom superposition approach: Theory and application to W(110)
Authors:
Krisztián Palotás,
Gábor Mándi,
László Szunyogh
Abstract:
We introduce an orbital dependent electron tunneling model and implement it within the atom superposition approach for simulating scanning tunneling microscopy (STM) and spectroscopy (STS). Applying our method, we analyze the convergence and the orbital contributions to the tunneling current and the corrugation of constant current STM images above the W(110) surface. In accordance with a previous…
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We introduce an orbital dependent electron tunneling model and implement it within the atom superposition approach for simulating scanning tunneling microscopy (STM) and spectroscopy (STS). Applying our method, we analyze the convergence and the orbital contributions to the tunneling current and the corrugation of constant current STM images above the W(110) surface. In accordance with a previous study [Heinze et al., Phys. Rev. B 58, 16432 (1998)], we find atomic contrast reversal depending on the bias voltage. Additionally, we analyze this effect depending on the tip-sample distance using different tip models, and find two qualitatively different behaviors based on the tip orbital composition. As an explanation, we highlight the role of the real space shape of the orbitals involved in the tunneling. STM images calculated by our model agree well with Tersoff-Hamann and Bardeen results. The computational efficiency of our model is remarkable as the k-point samplings of the surface and tip Brillouin zones do not affect the computation time, in contrast to the Bardeen method.
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Submitted 27 November, 2012; v1 submitted 28 June, 2012;
originally announced June 2012.
