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Iso-oriented monolayer α-MoO3(010) films epitaxially grown on SrTiO3(001)
Authors:
Yingge Du,
Guoqiang Li,
Erik W. Peterson,
**g Zhou,
Xin Zhang,
Rentao Mu,
Zdenek Dohnálek,
Mark Bowden,
Igor Lyubinetsky,
Scott A. Chambers
Abstract:
The ability to synthesis well-ordered two-dimensional materials under ultra-high vacuum and directly characterize them by other techniques in-situ can greatly advance our current understanding on their physical and chemical properties. In this paper, we demonstrate that iso-oriented α-MoO3 films with as low as single monolayer thickness can be reproducibly grown on SrTiO3(001) (STO) substrates by…
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The ability to synthesis well-ordered two-dimensional materials under ultra-high vacuum and directly characterize them by other techniques in-situ can greatly advance our current understanding on their physical and chemical properties. In this paper, we demonstrate that iso-oriented α-MoO3 films with as low as single monolayer thickness can be reproducibly grown on SrTiO3(001) (STO) substrates by molecular beam epitaxy ( (010)MoO3 || (001)STO, [100]MoO3 || [100]STO or [010]STO) through a self-limiting process. While one in-plane lattice parameter of the MoO3 is very close to that of the SrTiO3 (aMoO3 = 3.96 Å, aSTO = 3.905 Å), the lattice mismatch along other direction is large (~5%, cMoO3 = 3.70 Å), which leads to relaxation as clearly observed from the splitting of streaks in reflection high-energy electron diffraction (RHEED) patterns. A narrow range in the growth temperature is found to be optimal for the growth of monolayer α-MoO3 films. Increasing deposition time will not lead to further increase in thickness, which is explained by a balance between deposition and thermal desorption due to the weak van der Waals force between α-MoO3 layers. Lowering growth temperature after the initial iso-oriented α-MoO3 monolayer leads to thicker α-MoO3(010) films with excellent crystallinity.
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Submitted 6 November, 2015;
originally announced November 2015.
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Spatial First-passage Statistics of Al/Si(111)-(root3 x root3) Step Fluctuations
Authors:
B. R. Conrad,
W. G. Cullen,
D. B. Dougherty,
I. Lyubinetsky,
E. D. Williams
Abstract:
Spatial step edge fluctuations on a multi-component surface of Al/Si(111)-(root3 x root3) were measured via scanning tunneling microscopy over a temperature range of 720K-1070K, for step lengths of L = 65-160 nm. Even though the time scale of fluctuations of steps on this surface varies by orders of magnitude over the indicated temperature ranges, measured first-passage spatial persistence and s…
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Spatial step edge fluctuations on a multi-component surface of Al/Si(111)-(root3 x root3) were measured via scanning tunneling microscopy over a temperature range of 720K-1070K, for step lengths of L = 65-160 nm. Even though the time scale of fluctuations of steps on this surface varies by orders of magnitude over the indicated temperature ranges, measured first-passage spatial persistence and survival probabilities are temperature independent. The power law functional form for spatial persistence probabilities is confirmed and the symmetric spatial persistence exponent is measured to be theta = 0.498 +/- 0.062 in agreement with the theoretical prediction theta = 1/2. The survival probability is found to scale directly with y/L, where y is the distance along the step edge. The form of the survival probabilities agree quantitatively with the theoretical prediction, which yields exponential decay in the limit of small y/L. The decay constant is found experimentally to be ys/L= 0.076 +/- 0.033 for y/L <= 0.2.
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Submitted 2 October, 2008;
originally announced October 2008.
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Distinguishing step relaxation mechanisms via pair correlation functions
Authors:
D. B. Dougherty,
I. Lyubinetsky,
T. L. Einstein,
E. D. Williams
Abstract:
Theoretical predictions of coupled step motion are tested by direct STM measurement of the fluctuations of near-neighbor pairs of steps on Si(111)-root3 x root3 R30 - Al at 970K. The average magnitude of the pair-correlation function is within one standard deviation of zero, consistent with uncorrelated near-neighbor step fluctuations. The time dependence of the pair-correlation function shows n…
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Theoretical predictions of coupled step motion are tested by direct STM measurement of the fluctuations of near-neighbor pairs of steps on Si(111)-root3 x root3 R30 - Al at 970K. The average magnitude of the pair-correlation function is within one standard deviation of zero, consistent with uncorrelated near-neighbor step fluctuations. The time dependence of the pair-correlation function shows no statistically significant agreement with the predicted t^1/2 growth of pair correlations via rate-limiting atomic diffusion between adjacent steps. The physical considerations governing uncorrelated step fluctuations occurring via random attachment/detachment events at the step edge are discussed.
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Submitted 20 August, 2004;
originally announced August 2004.
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Experimental Persistence Probability for Fluctuating Steps
Authors:
D. B. Dougherty,
I. Lyubinetsky,
E. D. Williams,
M. Constantin,
C. Dasgupta,
S. Das Sarma
Abstract:
The persistence behavior for fluctuating steps on the $Si(111)$ $(\sqrt3 \times \sqrt3)R30^{0} - Al$ surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970K. The measured persistence probability follows a power law decay with an exponent of $θ=0.77 \pm 0.03$. This is consistent with the value of $θ= 3/4$ predicted for attachment/detachment limited step…
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The persistence behavior for fluctuating steps on the $Si(111)$ $(\sqrt3 \times \sqrt3)R30^{0} - Al$ surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970K. The measured persistence probability follows a power law decay with an exponent of $θ=0.77 \pm 0.03$. This is consistent with the value of $θ= 3/4$ predicted for attachment/detachment limited step kinetics. If the persistence analysis is carried out in terms of return to a fixed reference position, the measured persistence probability decays exponentially. Numerical studies of the Langevin equation used to model step motion corroborate the experimental observations.
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Submitted 16 September, 2002; v1 submitted 4 September, 2002;
originally announced September 2002.
