Showing 1–7 of 7 results for author: Lyttleton, R W

The effect of direct electron beam patterning on the water uptake and ionic conductivity of Nafion thin films

Authors: Ky V. Nguyen, Jan G. Gluschke, A. Bernardus Mostert, Andrew Nelson, Gregory Burwell, Roman W. Lyttleton, Hamish Cavaye, Rebecca J. L. Welbourn, Jakob Seidl, Maxime Lagier, Marta Sanchez Miranda, James D. McGettrick, Trystan Watson, Paul Meredith, Adam P. Micolich

Abstract: We report the effect of electron-beam patterning on the water uptake and ionic conductivity of Nafion films using a combination of x-ray photoelectron spectroscopy, quartz crystal microbalance studies, neutron reflectometry, and AC impedance spectroscopy. The aim was to more fully characterize the nature of the nanoscale patterned Nafion structures recently used as a key element in novel ion-to-el… ▽ More We report the effect of electron-beam patterning on the water uptake and ionic conductivity of Nafion films using a combination of x-ray photoelectron spectroscopy, quartz crystal microbalance studies, neutron reflectometry, and AC impedance spectroscopy. The aim was to more fully characterize the nature of the nanoscale patterned Nafion structures recently used as a key element in novel ion-to-electron transducers by Gluschke et al. To enable these studies, we develop the electron beam patterning process for large areas, achieving patterning speeds approaching 1 cm$^{2}$/hr, and patterned areas as large as 7 cm$^{2}$ for the neutron reflectometry studies. We ultimately show that electron-beam patterning affects both the water uptake and the ionic conductivity, depending on film thickness. We see Type-II adsorption isotherm behaviour for all films. For thick films (~230 nm), we see a strong reduction in water uptake with electron-beam patterning. In contrast, for thin films (~30 nm), electron-beam patterning enhances water uptake. Notably, we find that for either thickness the reduction in ionic conductivity arising from electron-beam patterning is kept to less than an order of magnitude. We propose mechanisms for the observed behaviour based on the known complex morphology of Nafion films to motivate future studies of electron-beam processed Nafion. △ Less

Submitted 21 June, 2023; originally announced June 2023.

Journal ref: Advanced Electronic Materials 2300199 (2023)

Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion

Authors: J. G. Gluschke, J. Seidl, R. W. Lyttleton, K. Nguyen, M. Lagier, F. Meyer, P. Krogstrup, J. Nygard, S. Lehmann, A. B. Mostert, P. Meredith, A. P. Micolich

Abstract: A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion. We demonstrate inverter circuits with state-of-the-art ion-to-electron tran… ▽ More A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion. We demonstrate inverter circuits with state-of-the-art ion-to-electron transduction performance giving DC gain exceeding 5 and frequency response up to 2 kHz. A key innovation facilitating the logic integration is a new electron-beam process for patterning Nafion with linewidths down to 125 nm. This process delivers feature sizes compatible with low voltage, fast switching elements. This expands the scope for Nafion as a versatile patternable high-proton-conductivity element for bioelectronics and other applications requiring nanoengineered protonic membranes and electrodes. △ Less

Submitted 14 May, 2023; originally announced May 2023.

Journal ref: Mater. Horiz. 8, 224 (2021)

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Authors: J. G. Gluschke, J. Seidl, A. M. Burke, R. W. Lyttleton, D. J. Carrad, A. R. Ullah, S. Fahlvik Svensson, S. Lehmann, H. Linke, A. P. Micolich

Abstract: We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control… ▽ More We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length. △ Less

Submitted 8 October, 2018; originally announced October 2018.

Comments: Submitted to Nanotechnology

Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors

Authors: J. G. Gluschke, J. Seidl, R. W. Lyttleton, D. J. Carrad, J. W. Cochrane, S. Lehmann, L. Samuelson, A. P. Micolich

Abstract: We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled dep… ▽ More We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally-coated nanowires, which we used to produce functional $Ω$-gate and gate-all-around structures. These give sub-threshold swings as low as 140 mV/dec and on/off ratios exceeding $10^3$ at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically-treated nanowire surfaces; a feature generally not possible with oxides produced by atomic layer deposition due to the surface `self-cleaning' effect. Our results highlight the potential for parylene as an alternative ultra-thin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Journal ref: Nano Letters 18, 4431-4439 (2018)

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Authors: D. J. Carrad, A. M. Burke, R. W. Lyttleton, H. J. Joyce, H. H. Tan, C. Jagadish, K. Storm, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces… ▽ More We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. △ Less

Submitted 7 April, 2014; originally announced April 2014.

Comments: 20 pages, 4 figures. Supplementary information available at Nano Letters or by contact with APM

Journal ref: Nano Letters 14, 94 (2014)

Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene organic transistors?

Authors: K. Muhieddine, R. W. Lyttleton, J. Badcock, M. A. Loth, J. Stride, J. E. Anthony, A. P. Micolich

Abstract: Triethylsilylethynyl anthradithiophene (TESADT) holds considerable promise for organic transistor applications due to the high electrical mobilities attained by post-deposition crystallization using solvent vapour annealing. We have studied thermal annealing as an alternative route to post-deposition crystallization of TESADT films. Thermal annealing initially appears promising, producing mm-sized… ▽ More Triethylsilylethynyl anthradithiophene (TESADT) holds considerable promise for organic transistor applications due to the high electrical mobilities attained by post-deposition crystallization using solvent vapour annealing. We have studied thermal annealing as an alternative route to post-deposition crystallization of TESADT films. Thermal annealing initially appears promising, producing mm-sized crystal domains, but poor electrical performance is obtained, which we attribute to a combination of crack formation and potentially also structural transition during the anneal process. We also find that illumination has a significant positive effect on crystallization, possibly due to an optically-induced enhancement in molecular mobility during annealing. This suggests further studies of how solvent exposure, heat, substrate surface properties and particularly light exposure influence the ordering kinetics of TESADT are warranted. △ Less

Submitted 6 April, 2014; originally announced April 2014.

Comments: In press for Journal of Organic Semiconductors

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

Authors: D. J. Carrad, A. M. Burke, P. J. Reece, R. W. Lyttleton, D. E. J. Waddington, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in pho… ▽ More We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in photoluminescence intensity for the (100) surface, an increase of only 2 - 3 x is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface. △ Less

Submitted 8 July, 2013; v1 submitted 4 December, 2012; originally announced December 2012.