Showing 1–11 of 11 results for author: Lyttleton, R

The effect of direct electron beam patterning on the water uptake and ionic conductivity of Nafion thin films

Authors: Ky V. Nguyen, Jan G. Gluschke, A. Bernardus Mostert, Andrew Nelson, Gregory Burwell, Roman W. Lyttleton, Hamish Cavaye, Rebecca J. L. Welbourn, Jakob Seidl, Maxime Lagier, Marta Sanchez Miranda, James D. McGettrick, Trystan Watson, Paul Meredith, Adam P. Micolich

Abstract: We report the effect of electron-beam patterning on the water uptake and ionic conductivity of Nafion films using a combination of x-ray photoelectron spectroscopy, quartz crystal microbalance studies, neutron reflectometry, and AC impedance spectroscopy. The aim was to more fully characterize the nature of the nanoscale patterned Nafion structures recently used as a key element in novel ion-to-el… ▽ More We report the effect of electron-beam patterning on the water uptake and ionic conductivity of Nafion films using a combination of x-ray photoelectron spectroscopy, quartz crystal microbalance studies, neutron reflectometry, and AC impedance spectroscopy. The aim was to more fully characterize the nature of the nanoscale patterned Nafion structures recently used as a key element in novel ion-to-electron transducers by Gluschke et al. To enable these studies, we develop the electron beam patterning process for large areas, achieving patterning speeds approaching 1 cm$^{2}$/hr, and patterned areas as large as 7 cm$^{2}$ for the neutron reflectometry studies. We ultimately show that electron-beam patterning affects both the water uptake and the ionic conductivity, depending on film thickness. We see Type-II adsorption isotherm behaviour for all films. For thick films (~230 nm), we see a strong reduction in water uptake with electron-beam patterning. In contrast, for thin films (~30 nm), electron-beam patterning enhances water uptake. Notably, we find that for either thickness the reduction in ionic conductivity arising from electron-beam patterning is kept to less than an order of magnitude. We propose mechanisms for the observed behaviour based on the known complex morphology of Nafion films to motivate future studies of electron-beam processed Nafion. △ Less

Submitted 21 June, 2023; originally announced June 2023.

Journal ref: Advanced Electronic Materials 2300199 (2023)

Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion

Authors: J. G. Gluschke, J. Seidl, R. W. Lyttleton, K. Nguyen, M. Lagier, F. Meyer, P. Krogstrup, J. Nygard, S. Lehmann, A. B. Mostert, P. Meredith, A. P. Micolich

Abstract: A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion. We demonstrate inverter circuits with state-of-the-art ion-to-electron tran… ▽ More A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion. We demonstrate inverter circuits with state-of-the-art ion-to-electron transduction performance giving DC gain exceeding 5 and frequency response up to 2 kHz. A key innovation facilitating the logic integration is a new electron-beam process for patterning Nafion with linewidths down to 125 nm. This process delivers feature sizes compatible with low voltage, fast switching elements. This expands the scope for Nafion as a versatile patternable high-proton-conductivity element for bioelectronics and other applications requiring nanoengineered protonic membranes and electrodes. △ Less

Submitted 14 May, 2023; originally announced May 2023.

Journal ref: Mater. Horiz. 8, 224 (2021)

Solving the 3-SAT problem using network-based biocomputation

Authors: **gyuan Zhu, Aseem Salhotra, Christoph Robert Meinecke, Pradheebha Surendiran, Roman Lyttleton, Danny Reuter, Hillel Kugler, Stefan Diez, Alf Månsson, Heiner Linke, Till Korten

Abstract: The 3-Satisfiability Problem (3-SAT) is a demanding combinatorial problem, of central importance among the non-deterministic polynomial (NP) complete problems, with applications in circuit design, artificial intelligence and logistics. Even with optimized algorithms, the solution space that needs to be explored grows exponentially with increasing size of 3-SAT instances. Thus, large 3-SAT instance… ▽ More The 3-Satisfiability Problem (3-SAT) is a demanding combinatorial problem, of central importance among the non-deterministic polynomial (NP) complete problems, with applications in circuit design, artificial intelligence and logistics. Even with optimized algorithms, the solution space that needs to be explored grows exponentially with increasing size of 3-SAT instances. Thus, large 3-SAT instances require excessive amounts of energy to solve with serial electronic computers. Network-based biocomputation (NBC) is a multidisciplinary parallel computation approach with drastically reduced energy consumption. NBC uses biomolecular motors to propel cytoskeletal filaments through nanofabricated networks that encode the mathematical problems. By stochastically exploring possible paths through the networks, the cytoskeletal filaments find possible solutions to the encoded problem instance. Here we first report a novel algorithm that converts 3-SAT into NBC-compatible network format. We demonstrate that this algorithm works in practice, by experimentally solving four small 3-SAT instances (with up to 3 variables and 5 clauses) using the actin-myosin biomolecular motor system. This is a key step towards the broad general applicability of NBC because polynomial conversions to 3-SAT exist for a wide set of important NP-complete problems. △ Less

Submitted 31 March, 2022; originally announced March 2022.

The Lawnmower: an autonomous, protein-based artificial molecular motor

Authors: Chapin S. Korosec, Ivan Unksov, Pradheebha Surendiran, Roman Lyttleton, Paul M. G. Curmi, Christopher N. Angstmann, Ralf Eichhorn, Heiner Linke, Nancy R. Forde

Abstract: Inspired by biology, great progress has been made in creating artificial molecular motors. However, the dream of harnessing proteins - the building blocks selected by Nature - to design autonomous motors has so far remained elusive. Here we report the synthesis and characterization of the Lawnmower, an autonomous, protein-based artificial molecular motor comprised of a spherical hub decorated with… ▽ More Inspired by biology, great progress has been made in creating artificial molecular motors. However, the dream of harnessing proteins - the building blocks selected by Nature - to design autonomous motors has so far remained elusive. Here we report the synthesis and characterization of the Lawnmower, an autonomous, protein-based artificial molecular motor comprised of a spherical hub decorated with proteases. Its "burnt-bridge" motion is directed by cleavage of a peptide lawn, promoting motion towards unvisited substrate. We find that Lawnmowers exhibit directional motion with average speeds of up to 80 nm/s, comparable to biological motors. By selectively patterning the peptide lawn on microfabricated tracks, we furthermore show that the Lawnmower is capable of track-guided motion. Our work opens an avenue towards nanotechnology applications of artificial protein motors. △ Less

Submitted 11 August, 2023; v1 submitted 21 September, 2021; originally announced September 2021.

Prospects for single-molecule electrostatic detection in molecular motor gliding motility assays

Authors: M. Sanchez Miranda, R. Lyttleton, P. H. Siu, S. Diez, H. Linke, A. P. Micolich

Abstract: Molecular motor gliding motility assays based on myosin/actin or kinesin/microtubules are of interest for nanotechnology applications ranging from cargo-trafficking in lab-on-a-chip devices to novel biocomputation strategies. Prototype systems are typically monitored by expensive and bulky fluorescence microscopy systems and the development of integrated, direct electric detection of single filame… ▽ More Molecular motor gliding motility assays based on myosin/actin or kinesin/microtubules are of interest for nanotechnology applications ranging from cargo-trafficking in lab-on-a-chip devices to novel biocomputation strategies. Prototype systems are typically monitored by expensive and bulky fluorescence microscopy systems and the development of integrated, direct electric detection of single filaments would strongly benefit applications and scale-up. We present estimates for the viability of such a detector by calculating the electrostatic potential change generated at a carbon nanotube transistor by a motile actin filament or microtubule under realistic gliding assay conditions. We combine this with detection limits based on previous state-of-the-art experiments using carbon nanotube transistors to detect catalysis by a bound lysozyme molecule and melting of a bound short-strand DNA molecule. Our results show that detection should be possible for both actin and microtubules using existing low ionic strength buffers given good device design, e.g., by raising the transistor slightly above the guiding channel floor. We perform studies as a function of buffer ionic strength, height of the transistor above the guiding channel floor, presence/absence of the casein surface passivation layer for microtubule assays and the linear charge density of the actin filaments/microtubules. We show that detection of microtubules is a more likely prospect given their smaller height of travel above the surface, higher negative charge density and the casein passivation, and may possibly be achieved with the nanoscale transistor sitting directly on the guiding channel floor. △ Less

Submitted 22 February, 2021; v1 submitted 15 February, 2021; originally announced February 2021.

Comments: Submitted to New Journal of Physics

Journal ref: New J. Phys. 23, 065003 (2021)

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Authors: J. G. Gluschke, J. Seidl, A. M. Burke, R. W. Lyttleton, D. J. Carrad, A. R. Ullah, S. Fahlvik Svensson, S. Lehmann, H. Linke, A. P. Micolich

Abstract: We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control… ▽ More We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length. △ Less

Submitted 8 October, 2018; originally announced October 2018.

Comments: Submitted to Nanotechnology

Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors

Authors: J. G. Gluschke, J. Seidl, R. W. Lyttleton, D. J. Carrad, J. W. Cochrane, S. Lehmann, L. Samuelson, A. P. Micolich

Abstract: We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled dep… ▽ More We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally-coated nanowires, which we used to produce functional $Ω$-gate and gate-all-around structures. These give sub-threshold swings as low as 140 mV/dec and on/off ratios exceeding $10^3$ at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically-treated nanowire surfaces; a feature generally not possible with oxides produced by atomic layer deposition due to the surface `self-cleaning' effect. Our results highlight the potential for parylene as an alternative ultra-thin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Journal ref: Nano Letters 18, 4431-4439 (2018)

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Authors: D. J. Carrad, A. M. Burke, R. W. Lyttleton, H. J. Joyce, H. H. Tan, C. Jagadish, K. Storm, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces… ▽ More We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. △ Less

Submitted 7 April, 2014; originally announced April 2014.

Comments: 20 pages, 4 figures. Supplementary information available at Nano Letters or by contact with APM

Journal ref: Nano Letters 14, 94 (2014)

Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene organic transistors?

Authors: K. Muhieddine, R. W. Lyttleton, J. Badcock, M. A. Loth, J. Stride, J. E. Anthony, A. P. Micolich

Abstract: Triethylsilylethynyl anthradithiophene (TESADT) holds considerable promise for organic transistor applications due to the high electrical mobilities attained by post-deposition crystallization using solvent vapour annealing. We have studied thermal annealing as an alternative route to post-deposition crystallization of TESADT films. Thermal annealing initially appears promising, producing mm-sized… ▽ More Triethylsilylethynyl anthradithiophene (TESADT) holds considerable promise for organic transistor applications due to the high electrical mobilities attained by post-deposition crystallization using solvent vapour annealing. We have studied thermal annealing as an alternative route to post-deposition crystallization of TESADT films. Thermal annealing initially appears promising, producing mm-sized crystal domains, but poor electrical performance is obtained, which we attribute to a combination of crack formation and potentially also structural transition during the anneal process. We also find that illumination has a significant positive effect on crystallization, possibly due to an optically-induced enhancement in molecular mobility during annealing. This suggests further studies of how solvent exposure, heat, substrate surface properties and particularly light exposure influence the ordering kinetics of TESADT are warranted. △ Less

Submitted 6 April, 2014; originally announced April 2014.

Comments: In press for Journal of Organic Semiconductors

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

Authors: D. J. Carrad, A. M. Burke, P. J. Reece, R. W. Lyttleton, D. E. J. Waddington, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in pho… ▽ More We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in photoluminescence intensity for the (100) surface, an increase of only 2 - 3 x is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface. △ Less

Submitted 8 July, 2013; v1 submitted 4 December, 2012; originally announced December 2012.

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Authors: A. M. Burke, D. Waddington, D. Carrad, R. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of… ▽ More Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trap** and charge migration in the do** layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-do** layer with deep-trap** centers (e.g., by co-do** with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states. △ Less

Submitted 15 September, 2012; v1 submitted 12 July, 2012; originally announced July 2012.

Comments: 15 pages, 11 figures; Accepted for Physical Review B