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Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals
Authors:
Rujun Sun,
Yu Kee Ooi,
Arkka Bhattacharyya,
Muad Saleh,
Sriram Krishnamoorthy,
Kelvin G. Lynn,
Michael A. Scarpulla
Abstract:
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously re…
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Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously reported 0.86 (E2) and 1.03 eV (E3) levels. For 10^18 cm-3 Zr-doped Ga2O3, signatures at 0.30 eV (E15) and 0.71 eV (E16) are present. For the highest Zr do** of 5*10^18 cm-3, we observe only one signature at 0.59 eV. Electric field-enhanced emission rates are demonstrated via increasing the reverse bias during measurement. The 0.86 eV signature in the UID sample displays phonon-assisted tunneling enhanced thermal emission and is consistent with the widely reported E2 (FeGa) defect. The 0.71 eV (E16) signature in the lower-Zr-doped crystal also exhibits phonon-assisted tunneling emission enhancement. Taking into account that the high do** in the Zr-doped diodes also increases the electric field, we propose that the 0.59 eV signature in the highest Zr-doped sample likely corresponds to the 0.71 eV signature in lower-doped samples. Our analysis highlights the importance of testing for and reporting on field-enhanced emission especially the electric field present during DLTS and other characterization experiments on beta-Ga2O3 along with the standard emission energy, cross-section, and lambda-corrected trap density. This is important because of the intended use of beta-Ga2O3 in high-field devices and the many orders of magnitude of possible do**.
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Submitted 6 November, 2020;
originally announced November 2020.
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On the origin of red luminescence from iron-doped beta-Ga2O3 bulk crystals
Authors:
Rujun Sun,
Yu Kee Ooi,
Peter T. Dickens,
Kelvin G. Lynn,
Michael A. Scarpulla
Abstract:
Currently, Fe do** in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features have been reported from multiple types of Ga2O3 samples including Fe-doped -Ga2O3, and attributed to Fe or N at O. Herein, however, we demonstrate that the high-intensity red luminescence from Fe-doped beta-Ga2O3 commerc…
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Currently, Fe do** in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features have been reported from multiple types of Ga2O3 samples including Fe-doped -Ga2O3, and attributed to Fe or N at O. Herein, however, we demonstrate that the high-intensity red luminescence from Fe-doped beta-Ga2O3 commercial substrates consisting of two sharp peaks at 689 nm and 697 nm superimposed on a broader peak centered at 710 nm originates from Cr impurities present at a concentration near 2 ppm. The red emission exhibits two-fold symmetry, peaks in intensity for excitation near absorption edge, seems to compete with Ga2O3 emission at higher excitation energy and appears to be intensified in the presence of Fe. Based on polarized absorption, luminescence observations and Tanabe-Sugano diagram analysis, we propose a resonant energy transfer of photogenerated carriers in beta-Ga2O3 matrix to octahedrally-coordinated Cr3+ to give red luminescence, possibly also sensitized by Fe3+.
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Submitted 21 July, 2020;
originally announced July 2020.
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Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric
Authors:
Arkka Bhattacharyya,
Praneeth Ranga,
Muad Saleh,
Saurav Roy,
Michael A. Scarpulla,
Kelvin G. Lynn,
Sriram Krishnamoorthy
Abstract:
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS)…
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This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) Schottky barrier diodes were fabricated on bulk n-type doped $β$-Ga$_2$O$_3$ single crystal substrates along the (010), (-201) and (100) orientations and were characterized by room temperature current-voltage (I-V) and capacitance-voltage (C-V) measurements. Pt MIS diodes exhibited 0.53 eV and 0.37 eV increment in SBH along the (010) and (-201) orientations respectively as compared to their respective MS counterparts. The highest SBH of 1.81 eV was achieved on the (010)-oriented MIS SBD using Pt metal. The MIS SBDs on (100)-oriented substrates exhibited a dramatic increment ($>$1.5$\times$) in SBH as well as reduction in reverse leakage current. The use of thin dielectric interlayers can be an efficient experimental method to modulate SBH of metal/Ga$_2$O$_3$ junctions.
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Submitted 20 January, 2020;
originally announced January 2020.
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Magnetic Shield Approach Toward Non-adiabatic Low to High Field Positron Beam Transition for Microtraps
Authors:
M. A. Khamehchi,
A. Narimannezhad,
M. H. Weber,
K. G. Lynn
Abstract:
This simulation study sheds light on effectiveness of a magnetic shield on non-adiabatic transport of a positron beam from 3700G to 100G where we were able to maximize the low to high field transmission efficiency for 6.5KeV positrons. An initially brighter beam can be transported even more efficiently. Cross-sectional uniformity of the beam is also studied for different beam energies. This is imp…
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This simulation study sheds light on effectiveness of a magnetic shield on non-adiabatic transport of a positron beam from 3700G to 100G where we were able to maximize the low to high field transmission efficiency for 6.5KeV positrons. An initially brighter beam can be transported even more efficiently. Cross-sectional uniformity of the beam is also studied for different beam energies. This is important for filling microtraps consist of thousands tubes with diameters of tens of microns each. Transverse momentum of the particles is also studied since it causes mirroring in the high field and compromises efficiency. Beam remoderation is required as ~eV energy positrons will be trapped in the Microtrap. The observed magnetic shield assisted low to high filed transition opens new avenue for high efficiency manipulating of non-neutral beams.
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Submitted 13 October, 2014;
originally announced October 2014.
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Study of Conduction Cooling Effects in Long Aspect Ratio Penning-Malmberg Micro-Traps
Authors:
M. A. Khamehchi,
C. J. Baker,
M. H. Weber,
K. G. Lynn
Abstract:
A first order perturbation with respect to velocity has been employed to find the frictional dam** force imposed on a single moving charge due to a perturbative electric field, inside a long circular cylindrical trap. We find that the electric field provides a cooling effect, has a tensorial relationship with the velocity of the charge. A mathematical expression for the tensor field has been der…
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A first order perturbation with respect to velocity has been employed to find the frictional dam** force imposed on a single moving charge due to a perturbative electric field, inside a long circular cylindrical trap. We find that the electric field provides a cooling effect, has a tensorial relationship with the velocity of the charge. A mathematical expression for the tensor field has been derived and numerically estimated. The corresponding drag forces for a charge moving close to the wall in a cylindrical geometry asymptotically approaches the results for a flat surface geometry calculated in the literature. Many particle conduction cooling power dissipation is formulated using the single particle analysis. Also the cooling rate for a weakly interacting ensemble is estimated. It is suggested that a pre-trap section with relatively high electrical resistivity can be employed to cool down low density ensembles of electrons/positrons before being injected into the trap. For a micro-trap with tens of thousands of micro-tubes, hundreds of thousands of particles can be cooled down in each cooling cycle. For example, tens of particles per micro-tube in a $5 cm$ long pre-trap section with the resistivity of $0.46 Ωm$ and the micro-tubes of radius $50 μm$ can be cooled down with the time constant of $106μs$.
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Submitted 12 July, 2013;
originally announced July 2013.
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Fabrication of High Aspect Ratio Micro-Penning-Malmberg Gold Plated Silicon Trap Arrays
Authors:
Alireza Narimannezhad,
Joshah Jennings,
Marc H. Weber,
Kelvin G. Lynn
Abstract:
Acquiring a portable high density charged particles trap might consist of an array of micro-Penning-Malmberg traps (microtraps) with substantially lower end barriers potential than conventional Penning-Malmberg traps [1]. We report on the progress of the fabrication of these microtraps designed for antimatter storage such as positrons. The fabrication of large length to radius aspect ratio (1000:1…
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Acquiring a portable high density charged particles trap might consist of an array of micro-Penning-Malmberg traps (microtraps) with substantially lower end barriers potential than conventional Penning-Malmberg traps [1]. We report on the progress of the fabrication of these microtraps designed for antimatter storage such as positrons. The fabrication of large length to radius aspect ratio (1000:1) microtrap arrays involved advanced techniques including photolithography, deep reactive ion etching (DRIE) of silicon wafers to achieve through-vias, gold sputtering of the wafers on the surfaces and inside the vias, and thermal compression bonding of the wafers. This paper describes the encountered issues during fabrication and addresses geometry errors and asymmetries. In order to minimize the patch effects on the lifetime of the trapped positrons, the bonded stacks were gold electroplated to achieve a uniform gold surface. We show by simulation and analytical calculation that how positrons confinement time depends on trap imperfections.
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Submitted 9 July, 2013;
originally announced July 2013.
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Simulation studies of the behavior of positrons in a microtrap with long aspect ratio
Authors:
Alireza Narimannezhad,
Christopher J. Baker,
Marc H. Weber,
Jia Xu,
Kelvin G. Lynn
Abstract:
The charged particles storage capacity of microtraps (micro-Penning-Malmberg traps) with large length to radius aspect ratios and radii of the order of tens of microns was explored. Simulation studies of the motions of charged particles were conducted with particle-in-cell WARP code and the Charged Particle Optics (CPO) program. The new design of the trap consisted of an array of microtraps with s…
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The charged particles storage capacity of microtraps (micro-Penning-Malmberg traps) with large length to radius aspect ratios and radii of the order of tens of microns was explored. Simulation studies of the motions of charged particles were conducted with particle-in-cell WARP code and the Charged Particle Optics (CPO) program. The new design of the trap consisted of an array of microtraps with substantially lower end electrodes potential than conventional Penning-Malmberg traps, which makes this trap quite portable. It was computationally shown that each microtrap with 50 micron radius stored positrons with a density (1.6x10^11 cm^-3) even higher than that in conventional Penning-Malmberg traps (about 10^11 cm^-3) while the confinement voltage was only 10 V. It was presented in this work how to evaluate and lower the numerical noise by controlling the modeling parameters so the simulated plasma can evolve toward computational equilibrium. The local equilibrium distribution, where longitudinal force balance is satisfied along each magnetic field line, was attained in time scales of the simulation for plasmas initialized with a uniform density and Boltzmann energy distribution. The charge clouds developed the expected radial soft edge density distribution and rigid rotation evolved to some extent. To reach global equilibrium (i.e. rigid rotation) longer runs are required. The plasma confinement time and its thermalization were independent of the length. The length-dependency, reported in experiments, is due to fabrication and field errors. Computationally, more than one hundred million positrons were trapped in one microtrap with 50 micron radius and 10 cm length immersed in a 7 T uniform, axial magnetic field, and the density scaled as r^-2 down to 3 micron. Larger densities were trapped with higher barrier potentials.
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Submitted 9 July, 2013; v1 submitted 31 December, 2012;
originally announced January 2013.
