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Chiral charge density waves induced by Ti-do** in 1T-TaS2
Authors:
J. J. Gao,
W. H. Zhang,
J. G. Si,
X. Luo,
J. Yan,
Z. Z. Jiang,
W. Wang,
H. Y. Lv,
P. Tong,
W. H. Song,
X. B. Zhu,
W. J. Lu,
Y. Yin,
Y. P. Sun
Abstract:
We investigate the Ti-do** effect on the charge density wave (CDW) of 1T-TaS2 by combining scanning tunneling microscopy (STM) measurements and first-principle calculations. Although the Ti-do** induced phase evolution seems regular with increasing of the do** concentration (x), an unexpected chiral CDW phase is observed in the sample with x = 0.08, in which Ti atoms almost fully occupy the…
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We investigate the Ti-do** effect on the charge density wave (CDW) of 1T-TaS2 by combining scanning tunneling microscopy (STM) measurements and first-principle calculations. Although the Ti-do** induced phase evolution seems regular with increasing of the do** concentration (x), an unexpected chiral CDW phase is observed in the sample with x = 0.08, in which Ti atoms almost fully occupy the central Ta atoms in the CDW clusters. The emergence of the chiral CDW is proposed to be from the do**-enhanced orbital order. Only when x = 0.08, the possible long-range orbital order can trigger the chiral CDW phase. Compared with other 3d-elements doped 1T-TaS2, the Ti-do** retains the electronic flat band and the corresponding CDW phase, which is a prerequisite for the emergence of chirality. We expect that introducing elements with a strong orbital character may induce a chiral charge order in a broad class of CDW systems. The present results open up another avenue for further exploring the chiral CDW materials.
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Submitted 20 May, 2021;
originally announced May 2021.
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The origin of the turn-on phenomenon in Td-MoTe2
Authors:
Q. L. Pei,
W. J. Meng,
X. Luo,
H. Y. Lv,
F. C. Chen,
W. J. Lu,
Y. Y. Han,
P. Tong,
W. H. Song,
Y. B. Hou,
Q. Y. Lu,
Y. P. Sun
Abstract:
We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2. There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler rule scaling: MR - (H/p0)m with m - 1.92 and the t-o temperature T under different magnetic fields c…
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We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2. There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler rule scaling: MR - (H/p0)m with m - 1.92 and the t-o temperature T under different magnetic fields can also be scaled by T - (H-Hc)u with u = 1/2. Secondly, a combination of compensated electron-hole pockets and a possible electronic structure phase transition induced by the temperature have been validated in Td-MoTe2 by the STM/STS experiments. Compared with the STS of Td-MoTe2 single crystal under H = 0, the STS hardly changes even when the applied field is up to 7 T. The origins of the t-o phenomenon in Td-MoTe2 are discussed. Meanwhile, we analyzed the universality and applicability of the t-o phenomenon in the extreme MR materials with almost balanced hole and electron densities as well as with other systems where the density of hole or electron is in dominant position.
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Submitted 9 July, 2017;
originally announced July 2017.
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Manipulating charge-density-wave in monolayer $1T$-TiSe$_2$ by strain and charge do**: A first-principles investigation
Authors:
M. J. Wei,
W. J. Lu,
R. C. Xiao,
H. Y. Lv,
P. Tong,
W. H. Song,
Y. P. Sun
Abstract:
We investigate the effects of the in-plane biaxial strain and charge do** on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can significantly enhance the CDW order, while both compressive strain and charge do** (electrons and holes) suppress the CDW instability. The tensile strain may provide a…
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We investigate the effects of the in-plane biaxial strain and charge do** on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can significantly enhance the CDW order, while both compressive strain and charge do** (electrons and holes) suppress the CDW instability. The tensile strain may provide an effective method for obtaining higher CDW transition temperature on the basis of monolayer $1T$-TiSe$_2$. We also discuss the potential superconductivity in charge-doped monolayer $1T$-TiSe$_2$. Controllable electronic phase transition from CDW state to metallic state or even superconducting state can be realized in monolayer $1T$-TiSe$_2$, which makes $1T$-TiSe$_2$ possess a promising application in controllable switching electronic devices based on CDW.
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Submitted 20 June, 2017;
originally announced June 2017.
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The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2
Authors:
F. C. Chen,
H. Y. Lv,
X. Luo,
W. J. Lu,
Q. L. Pei,
G. T. Lin,
Y. Y. Han,
X. B. Zhu,
W. H. Song,
Y. P. Sun
Abstract:
We performed the angle dependent magnetoresistance (MR), Hall effect measurements, the temperature dependent magneto-thermoelectric power (TEP) S(T) measurements, and the first-principles calculations to study the electronic properties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to be electronically two-dimensional (2D). There are some interesting findings about Td-MoTe2: (1) A scal…
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We performed the angle dependent magnetoresistance (MR), Hall effect measurements, the temperature dependent magneto-thermoelectric power (TEP) S(T) measurements, and the first-principles calculations to study the electronic properties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to be electronically two-dimensional (2D). There are some interesting findings about Td-MoTe2: (1) A scaling approach εθ=(sin2θ+γ-2cos2θ)1/2 is applied, where θ is the magnetic field angle with respect to the c axis of the crystal and γ is the mass anisotropy. Unexpectedly, the electronically 3D character with γ as low as 1.9 is observed in Td-MoTe2; (2) The possible Lifshitz transition and the following electronic structure change can be verified around T~150 K and T~60 K, which is supported by the evidence of the slop changing of the temperature dependence of TEP, the carrier density extracted from Hall resistivity and the onset temperature of γ obtained from the MR measurements. The extremely large MR effect in Td-MoTe2 could originate from the combination of the electron-hole compensation and a particular orbital texture on the electron pocket, which is supported by the calculations of electronic structure. Our results may provide a general scaling relation for the anisotropic MR and help to recognize the origins of the MR effect in other systems, such as the Weyl semimetals and the Dirac ones.
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Submitted 11 June, 2017;
originally announced June 2017.
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Manipulation of type-I and type-II Dirac points in PdTe2 superconductor by external pressure
Authors:
R. C. Xiao,
P. L. Gong,
Q. S. Wu,
W. J. Lu,
M. J. Wei,
J. Y. Li,
H. Y. Lv,
X. Luo,
P. Tong,
X. B. Zhu,
Y. P. Sun
Abstract:
A pair of type-II Dirac cones in PdTe$_2$ was recently predicted by theories and confirmed in experiments, making PdTe$_2$ the first material that processes both superconductivity and type-II Dirac fermions. In this work, we study the evolution of Dirac cones in PdTe$_2$ under hydrostatic pressure by the first-principles calculations. Our results show that the pair of type-II Dirac points disappea…
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A pair of type-II Dirac cones in PdTe$_2$ was recently predicted by theories and confirmed in experiments, making PdTe$_2$ the first material that processes both superconductivity and type-II Dirac fermions. In this work, we study the evolution of Dirac cones in PdTe$_2$ under hydrostatic pressure by the first-principles calculations. Our results show that the pair of type-II Dirac points disappears at 6.1 GPa. Interestingly, a new pair of type-I Dirac points from the same two bands emerges at 4.7 GPa. Due to the distinctive band structures compared with those of PtSe$_2$ and PtTe$_2$, the two types of Dirac points can coexist in PdTe$_2$ under proper pressure (4.7-6.1 GPa). The emergence of type-I Dirac cones and the disappearance of type-II Dirac ones are attributed to the increase/decrease of the energy of the states at $Γ$ and $A$ point, which have the anti-bonding/bonding characters of interlayer Te-Te atoms. On the other hand, we find that the superconductivity of PdTe$_2$ slightly decreases with pressure. The pressure-induced different types of Dirac cones combined with superconductivity may open a promising way to investigate the complex interactions between Dirac fermions and superconducting quasi-particles.
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Submitted 26 July, 2017; v1 submitted 16 May, 2017;
originally announced May 2017.
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Edge-controlled half-metallic ferromagnetism and direct gap in ZrS2 nanoribbons
Authors:
H. Y. Lv,
W. J. Lu,
J. Y. Li,
R. C. Xiao,
M. J. Wei,
P. Tong,
X. B. Zhu,
Y. P. Sun
Abstract:
The electronic and magnetic properties of ZrS2 nanoribbons (NRs) are investigated based on the first-principles calculations. It is found that the ZrS2 NRs with armchair edges are all indirect-band-gap semiconductors without magnetism and the band-gap exhibits odd-even oscillation behavior with the increase of the ribbon width. For the NRs with zigzag edges, those with both edges S-terminated are…
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The electronic and magnetic properties of ZrS2 nanoribbons (NRs) are investigated based on the first-principles calculations. It is found that the ZrS2 NRs with armchair edges are all indirect-band-gap semiconductors without magnetism and the band-gap exhibits odd-even oscillation behavior with the increase of the ribbon width. For the NRs with zigzag edges, those with both edges S-terminated are nonmagnetic direct-band-gap semiconductors and the gap decreases monotonically as a function of the ribbon width. However, the NRs with one edge S-terminated and the other edge Zr-terminated are ferromagnetic half-metal, while those with both edges Zr-terminated tend to be ferromagnetic half-metal when the width $N\geq9$. The magnetism of both systems mainly originates from the unsaturated edge Zr atoms. Depending on the different edge configurations and ribbon widths, the ZrS2 NRs exhibit versatile electronic and magnetic properties, making them promising candidates for the applications of electronics and spintronics.
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Submitted 27 April, 2017;
originally announced April 2017.
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Manipulating superconductivity of $1T$-TiTe$_2$ by high pressure
Authors:
R. C. Xiao,
W. J. Lu,
D. F. Shao,
J. Y. Li,
M. J. Wei,
H. Y. Lv,
P. Tong,
X. B. Zhu,
Y. P. Sun
Abstract:
Superconductivity of transition metal dichalcogenide $1T$-TiTe$_2$ under high pressure was investigated by the first-principles calculations. Our results show that the superconductivity of $1T$-TiTe$_2$ exhibits very different behavior under the hydrostatic and uniaxial pressure. The hydrostatic pressure is harmful to the superconductivity, while the uniaxial pressure is beneficial to the supercon…
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Superconductivity of transition metal dichalcogenide $1T$-TiTe$_2$ under high pressure was investigated by the first-principles calculations. Our results show that the superconductivity of $1T$-TiTe$_2$ exhibits very different behavior under the hydrostatic and uniaxial pressure. The hydrostatic pressure is harmful to the superconductivity, while the uniaxial pressure is beneficial to the superconductivity. Superconducting transition temperature $T_C$ at ambient pressure is 0.73 K, and it reduces monotonously under the hydrostatic pressure to 0.32 K at 30 GPa. While the $T_C$ increases dramatically under the uniaxial pressure along $c$ axis. The established $T_C$ of 6.34 K under the uniaxial pressure of 17 GPa, below which the structural stability maintains, is above the liquid helium temperature of 4.2 K. The increase of density of states at Fermi level, the redshift of $F(ω)$/$α^2F(ω)$ and the softening of the acoustic modes with pressure are considered as the main reasons that lead to the enhanced superconductivity under uniaxial pressure. In view of the previously predicted topological phase transitions of $1T$-TiTe$_2$ under the uniaxial pressure [Phys. Rev. B 88, 155317 (2013)], we consider $1T$-TiTe$_2$ as a possible candidate in transition metal chalcogenides for exploring topological superconductivity.
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Submitted 14 January, 2017; v1 submitted 7 January, 2017;
originally announced January 2017.
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Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering
Authors:
H. Y. Lv,
W. J. Lu,
X. Luo,
H. Y. Lu,
X. B. Zhu,
Y. P. Sun
Abstract:
The electronic, phonon, and thermoelectric properties of a two-dimensional HfS2 monolayer are investigated by using the first-principles calculations combined with the Boltzmann transport theory. The band valleys of the HfS2 monolayer can be effectively tuned by the applied biaxial strain. The Seebeck coefficient and therefore the peak value of the power factor (with the relaxation time inserted)…
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The electronic, phonon, and thermoelectric properties of a two-dimensional HfS2 monolayer are investigated by using the first-principles calculations combined with the Boltzmann transport theory. The band valleys of the HfS2 monolayer can be effectively tuned by the applied biaxial strain. The Seebeck coefficient and therefore the peak value of the power factor (with the relaxation time inserted) increase when the degeneracy of the band valleys is increased by the strain. When no strain is applied, the HfS2 monolayer is an excellent n-type thermoelectric material, while the thermoelectric performance of the p-type doped one is poor. The applied tensile strain of 6% can increase the room-temperature ZT value of the p-type doped system to 3.67, which is five times larger than that of the unstrained one. The much more balanced ZT values of the p- and n-type do** are favorable for fabrication of both p- and n-legs of thermoelectric modules. Our results indicate that the thermoelectric performance of the HfS2 monolayer can be greatly improved by the valley engineering through the method of strain.
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Submitted 18 August, 2016;
originally announced August 2016.
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Enhanced superconductivity by strain and carrier-do** in borophene: A first principles prediction
Authors:
R. C. Xiao,
D. F. Shao,
W. J. Lu,
H. Y. Lv,
J. Y. Li,
Y. P. Sun
Abstract:
We predict by first principles calculations that the recently prepared borophene is a pristine two-dimensional (2D) monolayer superconductor, in which the superconductivity can be significantly enhanced by strain and charge carrier do**. The intrinsic metallic ground state with high density of states at Fermi energy and strong Fermi surface nesting lead to sizeable electron-phonon coupling, maki…
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We predict by first principles calculations that the recently prepared borophene is a pristine two-dimensional (2D) monolayer superconductor, in which the superconductivity can be significantly enhanced by strain and charge carrier do**. The intrinsic metallic ground state with high density of states at Fermi energy and strong Fermi surface nesting lead to sizeable electron-phonon coupling, making the freestanding borophene superconduct with $T_c$ close to 19.0 K. The tensile strain can increase $T_c$ to 27.4 K, while the hole do** can notably increase $T_c$ to 34.8 K. The results indicate that the borophene grown on substrates with large lattice parameters or under photoexcitation can show enhanced superconductivity with $T_c$ far more above liquid hydrogen temperature of 20.3 K, which will largely broaden the applications of such novel material.
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Submitted 21 April, 2016;
originally announced April 2016.
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Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer
Authors:
H. Y. Lv,
W. J. Lu,
D. F. Shao,
H. Y. Lu,
Y. P. Sun
Abstract:
The increase of a thermoelectric material's figure of merit (ZT value) is limited by the interplay of the transport coefficients. Here we report the greatly enhanced thermoelectric performance of a ZrS2 monolayer by the biaxial tensile strain, due to the simultaneous increase of the Seebeck coefficient and decrease of the thermal conductivity. Based on the first-principles calculations combined wi…
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The increase of a thermoelectric material's figure of merit (ZT value) is limited by the interplay of the transport coefficients. Here we report the greatly enhanced thermoelectric performance of a ZrS2 monolayer by the biaxial tensile strain, due to the simultaneous increase of the Seebeck coefficient and decrease of the thermal conductivity. Based on the first-principles calculations combined with the Boltzmann transport theory, we predict the band gap of the ZrS2 monolayer can be effectively engineered by the strain and the Seebeck coefficient is significantly increased. The thermal conductivity is reduced by the applied tensile strain due to the phonon softening. At the strain of 6%, the maximal ZT value of 2.4 is obtained for the p-type doped ZrS2 monolayer at 300 K, which is 4.3 times larger than that of the unstrained system.
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Submitted 2 March, 2016; v1 submitted 27 February, 2016;
originally announced February 2016.
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Manipulating charge-density-wave in $1T$-TaS$_{2}$ by charge carrier do**: A first-principles investigation
Authors:
D. F. Shao,
R. C. Xiao,
W. J. Lu,
H. Y. Lv,
J. Y. Li,
X. B. Zhu,
Y. P. Sun
Abstract:
The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier do**. Here we simulate by first-principles calculations the carrier do** effect on CCDW…
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The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier do**. Here we simulate by first-principles calculations the carrier do** effect on CCDW in $1T$-TaS$_{2}$. We investigate the charge do** effects on the electronic structures and phonon instabilities of $1T$ structure and analyze the do** induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer $1T$-TaS$_{2}$, CCDW is stable upon electron do**, while hole do** can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole do** increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole do** can introduce potential superconductivity with $T_{c}$ of $6\sim7$ K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in $1T$-TaS$_{2}$, which makes the novel material have very promising applications in the future electronic devices.
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Submitted 2 September, 2016; v1 submitted 21 December, 2015;
originally announced December 2015.
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Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers
Authors:
H. Y. Lv,
W. J. Lu,
D. F. Shao,
Y. Liu,
Y. P. Sun
Abstract:
We report on the strain-induced switch between ferromagnetic (FM) and antiferromagnetic (AFM) orderings in 1T-CrX2 (X = Se, Te) monolayers based on the first-principles calculations. The CrSe2 and CrTe2 monolayers without strains are found to be AFM and FM, respectively. Under the biaxial tensile strain, the CrSe2 monolayer tends to be FM when the strain is larger than 2%. The FM state is further…
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We report on the strain-induced switch between ferromagnetic (FM) and antiferromagnetic (AFM) orderings in 1T-CrX2 (X = Se, Te) monolayers based on the first-principles calculations. The CrSe2 and CrTe2 monolayers without strains are found to be AFM and FM, respectively. Under the biaxial tensile strain, the CrSe2 monolayer tends to be FM when the strain is larger than 2%. The FM state is further stabilized when the strain is increased. Moreover, the CrSe2 monolayer changes to be half-metallic when the tensile strain is larger than 10%. While for the CrTe2 monolayer, the critical strain at which the transition between the FM and AFM states occurs is compressive, of -1%. Relatively small tensile strains of 4% and 2%, respectively, can enhance the Curie temperature of CrSe2 and CrTe2 monolayers above the room temperature. The strain-induced switch between the FM and AFM states in CrSe2 (CrTe2) monolayer can be understood by the competition between the AFM Cr-Cr direct exchange and FM Cr-Se(Te)-Cr superexchange interactions. The tunable and attractive magnetic and electronic properties controlled by the flexible strain are desirable for the future nanoelectronic applications.
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Submitted 19 October, 2015; v1 submitted 24 September, 2015;
originally announced September 2015.
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Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer
Authors:
H. Y. Lv,
W. J. Lu,
D. F. Shao,
Y. Liu,
S. G. Tan,
Y. P. Sun
Abstract:
The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 p…
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The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 preserve the semimetallic property, with the equal hole and electron carrier concentrations. Moreover, the very high carrier mobilities are also found in WTe2 monolayer, indicating that the WTe2 monolayer would have the same extraordinary MR effect as the bulk, which could have promising applications in nanostructured magnetic devices.
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Submitted 29 December, 2014;
originally announced December 2014.
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Disorder suppressed charge-density-wave and its origin in 1T-TaSe2-xTex
Authors:
Y. Liu,
D. F. Shao,
W. J. Lu,
L. J. Li,
H. Y. Lv,
X. D. Zhu,
S. G. Tan,
B. Yuan,
L. Zu,
X. C. Kan,
W. H. Song,
Y. P. Sun
Abstract:
In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-\emph{\textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). In the experimentally prepared single crystals, the CDW is completely suppressed as $0.5 < x < 1.5$, while superconductivity emerges as $0.2 < x < 1.2$. Theoretically, si…
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In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-\emph{\textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). In the experimentally prepared single crystals, the CDW is completely suppressed as $0.5 < x < 1.5$, while superconductivity emerges as $0.2 < x < 1.2$. Theoretically, similar to 1\emph{T}-TaSe$_2$ and 1\emph{T}-TaTe$_2$, the hypothetic 1\emph{T}-TaSeTe with ordered Se/Ta/Te stacking shows instability in the phonon dispersion, indicating the presence of CDW in the ideally ordered sample. The contradictory between experimental and theoretical results suggests that the CDW is suppressed by disorder in 1\emph{T}-TaSe$_{2-x}$Te$_x$. The formation and suppression of CDW are found to be independent with Fermi surface nesting based on the generated electron susceptibility calculations. The calculation of phonon linewidth suggests the strong \textbf{\emph{q}}-dependent electron-phonon coupling induced period-lattice-distortion (PLD) should be related to our observation: The do** can largely distort the TaX$_6$ (X = Se, Te) octahedra, which are disorderly distributed. The resulted puckered Ta-Ta layers are not compatible with the two-dimensional PLD. Therefore, CDW is suppressed in 1\emph{T}-TaSe$_{2-x}$Te$_x$. Our results offer an indirect evidence that PLD, which can be influenced by strong disorder, is the origin of CDW in the system.
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Submitted 20 May, 2015; v1 submitted 14 December, 2014;
originally announced December 2014.
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Enhanced thermoelectric performance of phosphorene by strain-induced band convergence
Authors:
H. Y. Lv,
W. J. Lu,
D. F. Shao,
Y. P. Sun
Abstract:
The newly emerging monolayer phosphorene was recently predicted to be a promising thermoelectric material. In this work, we propose to further enhance the thermoelectric performance of phosphorene by the strain-induced band convergence. The effect of the uniaxial strain on the thermoelectric properties of phosphorene was investigated by using the first-principles calculations combined with the sem…
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The newly emerging monolayer phosphorene was recently predicted to be a promising thermoelectric material. In this work, we propose to further enhance the thermoelectric performance of phosphorene by the strain-induced band convergence. The effect of the uniaxial strain on the thermoelectric properties of phosphorene was investigated by using the first-principles calculations combined with the semi-classical Boltzmann theory. When the zigzag-direction strain is applied, the Seebeck coefficient and electrical conductivity in zigzag direction can be greatly enhanced simultaneously at the critical strain of 5% where the band convergence is achieved. The largest ZT value of 1.65 at 300 K is then achieved conservatively estimated by using the bulk lattice thermal conductivity. When the armchair-direction strain of 8% is applied, the room-temperature ZT value can reach 2.12 in the armchair direction of phosphorene. Our results indicate that strain induced band convergence could be an effective method to enhance the thermoelectric performance of phosphorene.
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Submitted 19 June, 2014;
originally announced June 2014.
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Electron-doped phosphorene: A potential monolayer superconductor
Authors:
D. F. Shao,
W. J. Lu,
H. Y. Lv,
Y. P. Sun
Abstract:
We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-do**, which results in the strong electron-phonon coupling. The superconductivity can be introduced by a doped electron density ($n_{2D}$) above $1.3 \times10^{14}$ cm$^{-2}$, and may exis…
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We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-do**, which results in the strong electron-phonon coupling. The superconductivity can be introduced by a doped electron density ($n_{2D}$) above $1.3 \times10^{14}$ cm$^{-2}$, and may exist over the liquid helium temperature when $n_{2D}>2.6 \times10^{14}$ cm$^{-2}$. The maximum critical temperature is predicted to be higher than 10 K. The superconductivity of phosphorene will significantly broaden the applications of this novel material.
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Submitted 18 December, 2014; v1 submitted 1 May, 2014;
originally announced May 2014.
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Large thermoelectric power factors in black phosphorus and phosphorene
Authors:
H. Y. Lv,
W. J. Lu,
D. F. Shao,
Y. P. Sun
Abstract:
The electronic properties of the layered black phosphorus (black-P) and its monolayer counterpart phosphorene are investigated by using the first-principles calculations based on the density functional theory (DFT). The room-temperature electronic transport coefficients are evaluated within the semi-classical Boltzmann theory. The electrical conductivity exhibits anisotropic behavior while the See…
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The electronic properties of the layered black phosphorus (black-P) and its monolayer counterpart phosphorene are investigated by using the first-principles calculations based on the density functional theory (DFT). The room-temperature electronic transport coefficients are evaluated within the semi-classical Boltzmann theory. The electrical conductivity exhibits anisotropic behavior while the Seebeck coefficient is almost isotropic. At the optimal do** level and room temperature, bulk black-P and phosphorene are found to have large thermoelectric power factors of 118.4 and 138.9 μWcm-1K-2, respectively. The maximum dimensionless figure of merit (ZT value) of 0.22 can be achieved in bulk black-P by appropriate n-type do**, primarily limited by the reducible lattice thermal conductivity. For the phosphorene, the ZT value can reach 0.30 conservatively estimated by using the bulk lattice thermal conductivity. Our results suggest that both bulk black-P and phosphorene are potentially promising thermoelectric materials.
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Submitted 21 April, 2014;
originally announced April 2014.
