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Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
Authors:
Karolina Kalbarczyk,
Krzysztof Dybko,
Katarzyna Gas,
Dariusz Sztenkiel,
Marek Foltyn,
Magdalena Majewicz,
Piotr Nowicki,
Elżbieta Łusakowska,
Detlef Hommel,
Maciej Sawicki
Abstract:
Schottky barrier height and the ideality factor $η$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10M$Ω$ resistances already at room temperature are indicative that a nearly conductive-dislocation-free elec…
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Schottky barrier height and the ideality factor $η$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10M$Ω$ resistances already at room temperature are indicative that a nearly conductive-dislocation-free electrical properties are achieved. The analysis of temperature dependence of the forward bias I-V characteristics in the frame of the thermionic emission model yields Ti-(Ga,Mn)N Schottky barrier height to be slightly lower but close in character to other metal/GaN junctions. However, the large magnitudes of the ideality factor $η$>1.5 for T$\leqslant$300K, point to a sizable current blocking in the structure. While it remains to be seen whether it is due to the presence of (Ga,Mn)N barrier or due to other factors which reduce the effective area of the junction, an existence of a substantial serial resistance may hold the key to explain similar observations in other devices of a corresponding structure and technological relevance.
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Submitted 23 July, 2019;
originally announced July 2019.
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Experimental search for the origin of low-energy modes in topological materials
Authors:
G. P. Mazur,
K. Dybko,
A. Szczerbakow,
J. Z. Domagala,
A. Kazakov,
M. Zgirski,
E. Lusakowska,
S. Kret,
J. Korczak,
T. Story,
M. Sawicki,
T. Dietl
Abstract:
Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance for topological surfaces of non-magnetic and magnetic Pb$_{1-y-x}$Sn$_y$Mn$_x$Te. We examine a possible contribution from superconducting nanoparticles…
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Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance for topological surfaces of non-magnetic and magnetic Pb$_{1-y-x}$Sn$_y$Mn$_x$Te. We examine a possible contribution from superconducting nanoparticles, and show to what extent our data are consistent with Brzezicki's et al. theory [arXiv:1812.02168], assigning the observations to a collective state adjacent to atomic steps at topological surfaces.
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Submitted 27 July, 2019; v1 submitted 12 September, 2017;
originally announced September 2017.
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Magnetic anisotropy induced by crystal distortion in Ge1-xMn xTe/PbTe//KCl (001) ferromagnetic semiconductor layers
Authors:
W. Knoff,
A. Łusakowski,
J. Z. Domagała,
R. Minikayev,
B. Taliashvili,
E. Łusakowska,
A. Pieniążek,
A. Szczerbakow,
T. Story
Abstract:
Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is contr…
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Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge1-xMnxTe layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.
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Submitted 22 July, 2015;
originally announced July 2015.
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ZnO, ZnMnO and ZnCoO films grown by atomic layer deposition
Authors:
M. I. Łukasiewicz,
A. Wójcik-Głodowska,
E. Guziewicz,
A. Wolska,
M. T. Klepka,
P. Dłużewski,
R. Jakieła,
E. Łusakowska,
K. Kopalko,
W. Paszkowicz,
Ł. Wachnicki,
B. S. Witkowski,
W. Lisowski,
M. Krawczyk,
J. W. Sobczak,
A. Jabłoński,
M. Godlewski
Abstract:
Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a non-uniform Mn or Co distribution. Thus, the control of their distribution is crucial for explanation of contradicted magnetic properties of ZnCoO and ZnMnO re…
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Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a non-uniform Mn or Co distribution. Thus, the control of their distribution is crucial for explanation of contradicted magnetic properties of ZnCoO and ZnMnO reported till now. In the present review we discuss advantages of the Atomic Layer Deposition (ALD) growth method, which enables us to control uniformity of ZnMnO and ZnCoO alloys. Properties of ZnO, ZnMnO and ZnCoO films grown by the ALD are discussed.
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Submitted 9 August, 2013;
originally announced August 2013.
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Topological crystalline insulator states in Pb(1-x)Sn(x)Se
Authors:
P. Dziawa,
B. J. Kowalski,
K. Dybko,
R. Buczko,
A. Szczerbakow,
M. Szot,
E. Łusakowska,
T. Balasubramanian,
B. M. Wojek,
M. H. Berntsen,
O. Tjernberg,
T. Story
Abstract:
Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested th…
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Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions.
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Submitted 15 August, 2013; v1 submitted 8 June, 2012;
originally announced June 2012.
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Properties and characterization of ALD grown dielectric oxides for MIS structures
Authors:
S. Gieraltowska,
D. Sztenkiel,
E. Guziewicz,
M. Godlewski,
G. Luka,
B. S. Witkowski,
L. Wachnicki,
E. Lusakowska,
T. Dietl,
M. Sawicki
Abstract:
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evapo…
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We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 \times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
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Submitted 27 July, 2011;
originally announced July 2011.
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ZnCoO Films by Atomic Layer Deposition - influence of a growth temperature on uniformity of cobalt distribution
Authors:
M. I. Lukasiewicz,
B. Witkowski,
M. Godlewski,
E. Guziewicz,
M. Sawicki,
W. Paszkowicz,
E. Lusakowska,
R. Jakiela,
T. Krajewski,
I. A. Kowalik,
B. J. Kowalski
Abstract:
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 30…
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We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300oC and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of SIMS, SEM, EDS, XRD, AFM, Hall effect and SQUID investigations.
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Submitted 26 July, 2011;
originally announced July 2011.
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GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions
Authors:
J. Sadowski,
P. Dluzewski,
S. Kret,
E. Janik,
E. Lusakowska,
J. Kanski,
A. Presz,
F. Terki,
S. Charar,
D. Tang
Abstract:
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine…
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GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self assembled structures for nanospintronics.
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Submitted 3 October, 2007;
originally announced October 2007.
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MnAs dots grown on GaN(0001)-(1x1) surface
Authors:
I. A. Kowalik,
B. J. Kowalski,
R. J. Iwanowski,
K. Kopalko,
E. Łusakowska,
M. Sawicki
Abstract:
MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1$\cdot 10^{11}$ cm$^{-2}$ and…
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MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1$\cdot 10^{11}$ cm$^{-2}$ and $2.5\cdot 10^{11}$ cm$^{-2}$, respectively (as observed by AFM), occurred for the layer thickness higher than 5 ML. Electronic structure of the MnAs/GaN systems was studied by resonant photoemission spectroscopy. That led to determination of the Mn 3d - related contribution to the total density of states (DOS) distribution of MnAs. It has been proven that the electronic structures of the MnAs dots grown by the two procedures differ markedly. One corresponds to metallic, ferromagnetic NiAs-type MnAs, the other is similar to that reported for half-metallic zinc-blende MnAs. Both system behave superparamagnetically (as revealed by magnetization measurements), but with both the blocking temperatures and the intra-dot Curie temperatures substantially different. The intra-dot Curie temperature is about 260 K for the former system while markedly higher than room temperature for the latter one. Relations between growth process, electronic structure and other properties of the studied systems are discussed. Possible mechanisms of half-metallic MnAs formation on GaN are considered.
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Submitted 19 February, 2007;
originally announced February 2007.
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Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers
Authors:
J. Sadowski,
M. Adell,
J. Kanski,
L. Ilver,
E. Janik,
E. Lusakowska,
J. Z. Domagala,
R. Brucas,
M. Hanson
Abstract:
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As cap**. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnA…
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Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As cap**. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnAs, are smooth and well-ordered (1x2), and are well suited for continued epitaxial growth.
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Submitted 4 April, 2005; v1 submitted 4 April, 2005;
originally announced April 2005.
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MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
Authors:
B. J. Kowalski,
I. A. Kowalik,
R. J. Iwanowski,
E. Lusakowska,
M. Sawicki,
J. Sadowski,
I. Grzegory,
S. Porowski
Abstract:
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.
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Submitted 28 October, 2004; v1 submitted 5 August, 2004;
originally announced August 2004.
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Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
Authors:
B. J. Kowalski,
I. A. Kowalik,
R. J. Iwanowski,
J. Sadowski,
J. Kanski,
B. A. Orlowski,
J. Ghijsen,
F. Mirabella,
E. Lusakowska,
P. Perlin,
S. Porowski,
I. Grzegory,
M. Leszczynski
Abstract:
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface…
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The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface subjected to similar ion etching was proven by means of X-ray photoemission spectroscopy.
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Submitted 4 August, 2004;
originally announced August 2004.
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The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As
Authors:
I. Kuryliszyn-Kudelska,
J. Z. Domagala,
T. Wojtowicz,
X. Liu,
E. Lusakowska,
W. Dobrowolski,
J. K. Furdyna
Abstract:
Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on how the interstitial Mn atoms (Mn_I) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low tempe…
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Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on how the interstitial Mn atoms (Mn_I) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low temperature annealing of Ga(1-x)Mn(x)As, which is known to reduce the Mn_I concentration. The reciprocal space maps measured for all the investigated samples showed that the Ga(1-x)Mn(x)As layers are fully strained - i.e., they remain pseudomorphic to the GaAs (001) substrate - for the entire thickness of the samples used (in the present case over 100 nm). In all cases studied the XRD measurements revealed high crystalline perfection of both as-grown as well as annealed Ga(1-x)Mn(x)As epilayers
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Submitted 18 July, 2003;
originally announced July 2003.
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Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers
Authors:
I. Kuryliszyn-Kudelska,
T. Wojtowicz,
X. Liu,
J. K. Furdyna,
W. Dobrowolski,
J. Z. Domagala,
E. Lusakowska,
M. Goiran,
E. Haanappel,
O. Portugall
Abstract:
High-field magnetic measurements performed with the use of magnetooptical Kerr effect (MOKE) in the polar configuration as well as high-field and low-field magnetotransport studies were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. The structural investigations by means of high resolution XRD were also per…
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High-field magnetic measurements performed with the use of magnetooptical Kerr effect (MOKE) in the polar configuration as well as high-field and low-field magnetotransport studies were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. The structural investigations by means of high resolution XRD were also performed. We observe significant changes in magnetoresistivity curves, magnetization and strain introduced by the annealing.
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Submitted 28 April, 2003;
originally announced April 2003.
