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Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric
Authors:
A. P. Morozov,
L. O. Luchnikov,
S. Yu. Yurchuk,
A. R. Ishteev,
P. A. Gostishchev,
S. I. Didenko,
N. S. Saratovsky,
S. S. Kozlov,
D. S. Muratov,
Yu. N. Luponosov,
D. S. Saranin
Abstract:
Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and ele…
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Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes. Our complex work demonstrates that interface engineering with P(VDF-TrFE) induces significant Fermi level pinning, reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers. The integration of P(VDF-TrFE) into the perovskite film did not affect the morphology and crystal structure, but significantly changed the charge transport and device performance. IV curve analysis and 2-diode model calculations showed enhanced shunt properties, a decreased non-ideality factor, and reduced saturation dark current. We have shown that the complex introduction of P(VDF-TrFE) into the absorbers bulk and on its surface is essential to reduce the impact of the trap** processes. For P(VDF-TrFE) containing devices, we increased the specific detectivity from 10^11 to 10^12 Jones, expanded the linear dynamic range up to 100 dB, and reduced the equivalent noise power to 10^-13 W*Hz^-0.5. Reducing non-radiative recombination contributions significantly enhanced device performance, improving rise/fall times from 6.3/10.9 us to 4.6/6.5 us. The cut-off frequency (3dB) increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric. These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states and ion defect compensation for detectors based on perovskite heterostructures.
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Submitted 3 July, 2024;
originally announced July 2024.
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Tailoring wetting properties of organic hole-transport interlayers for slot-die coated perovskite solar modules
Authors:
T. S. Le,
I. A. Chuykoa,
L. O. Luchnikova,
K. A. Ilicheva,
P. O. Sukhorukova,
D. O. Balakirev,
N. S. Saratovsky,
A. O. Alekseev,
S. S. Kozlov,
D. S. Muratov,
V. V. Voronov,
P. A. Gostishchev,
D. A. Kiselev,
T. S. Ilina,
A. A. Vasilev,
A. Y. Polyakov,
E. A. Svidchenko,
O. A. Maloshitskaya,
Yu. N. Luponosov,
D. S. Saranin
Abstract:
The use of self-assembled monolayers (SAMs) with anchoring groups was considered as an effective approach for interface engineering in perovskite solar cells with metal oxide charge transporting layers. However, the coating of SAM layers in PSMs by means of a slot-die is a challenging process due to the low viscosity of the solutions and the low wettability of the films. In this study, we integrat…
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The use of self-assembled monolayers (SAMs) with anchoring groups was considered as an effective approach for interface engineering in perovskite solar cells with metal oxide charge transporting layers. However, the coating of SAM layers in PSMs by means of a slot-die is a challenging process due to the low viscosity of the solutions and the low wettability of the films. In this study, we integrate a triphenylamine-based polymer, pTPA-TDP, blended with SAM based on 5-[4-[4-(diphenylamino) phenyl] thiophene-2-carboxylic acid (TPATC), to address the challenges of uniform slot-die coating and interface passivation in large-area modules. We fabricated p-i-n oriented PSMs on 50x50 mm2 substrates (12-sub-cells) with NiO hole transport layer (HTL) and organic interlayers for surface modification. Wetting angle map** demonstrated that ununiform regions of the slot-die coated SAM have hydrophobicity with contact angle values up to 90°, causing fluctuations in absorber thickness and the presence of macro-defects at buried interfaces. The incorporation of the blended interlayer to NiO/perovskite junction homogenized the surface wettability (contact angle=40°) and mitigated lattice strain in the absorber. This enabled the effective use of SAM properties on a large-area surface, improving energy level alignment and enhancing the power conversion efficiency (PCE) of the modules from 13.98% to 15.83% and stability (ISOS-L-2, T80 period) from 500-1000 hours to 1630 hours. Investigation of PSMs upon cooling till -5 °C showed that the PCE increased by +0.19%/°C for samples with NiO HTL, while using SAM and blended interlayers raised the coefficient to ~0.40%/°C due to changes in activation energy and trap contributions to device performance across a wide temperature range.
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Submitted 12 June, 2024;
originally announced June 2024.
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Triphenylamine-based interlayer with carboxyl anchoring group for tuning of charge collection interface in stabilized p-i-n perovskite solar cells and modules
Authors:
P. K. Sukhorukova,
E. A. Ilicheva,
P. A. Gostishchev,
L. O. Luchnikov,
M. M. Tepliakova,
D. O. Balakirev,
I. V. Dyadishchev,
A. A. Vasilev,
D. S. Muratov,
Yu. N. Luponosov,
A. Di Carlo,
D. S. Saranin
Abstract:
A novel triphenylamine-based hole transport material (HTM) with a carboxyl anchoring group (TPATC) was developed for tuning the interface between nanocrystalline NiO and double cation CsCH3(NH2)2PbI3-xClx absorber in p-i-n device architectures. We present a unique comprehensive confinement study of PSCs with TPATC as the self-assembled HTM, including analysis of numerical defect parameters, phase…
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A novel triphenylamine-based hole transport material (HTM) with a carboxyl anchoring group (TPATC) was developed for tuning the interface between nanocrystalline NiO and double cation CsCH3(NH2)2PbI3-xClx absorber in p-i-n device architectures. We present a unique comprehensive confinement study of PSCs with TPATC as the self-assembled HTM, including analysis of numerical defect parameters, phase composition evolution, and up-scaling capabilities. Our investigation shows that the ultrathin TPATC interlayer effectively passivates traps, increases work-function of HTL by about ~0.2 eV, and enhances the charge carrier extraction efficiency. Advanced transient spectroscopy measurements revealed that modification of the NiO surface with TPATC in perovskite solar cells (PSCs) reduces the concentration of ionic defects by an order of magnitude. Interface engineering with TPATC allowed to reach power conversion efficiency of 20.58% for small area devices (0.15 cm2) under standard AM 1.5 G conditions. Using TPATC interlayer also provided stabilized performance of PSCs under operation conditions and improved sustainability of the perovskite absorber to decomposition. After continuous light-soaking (1000 h, ISOS-L-2 protocol), NiO/TPATC devices showed a slight decrease of 2% in maximum power. In contrast, NiO PSCs demonstrated decrease in power output (>20%) after 400 h. We explored the potential of TPATC to modify interfaces in large-area perovskite solar modules (PSM, active area-64.8 cm2, 12 sub-cells). By applying slot-die-coated TPATC, the PCE at AM 1.5 G conditions increased from 13.22% for NiO PSM to 15.64% for NiO/TPATC ones. This study provides new insights into the interface engineering for p-i-n perovskite solar cells, behavior of the ionic defects and their contribution to the long-term stability.
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Submitted 22 November, 2023;
originally announced November 2023.
