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Gas dependent hysteresis in MoS$_2$ field effect transistors
Authors:
F. Urban,
F. Giubileo,
A. Grillo,
L. Iemmo,
G. Luongo,
M. Passacantando,
T. Foller,
L. Madauß,
E. Pollmann,
M. P. Geller,
D. Oing,
M. Schleberger,
A. Di Bartolomeo
Abstract:
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although…
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We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices.
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Submitted 27 June, 2023;
originally announced June 2023.
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Graphene-silicon device for visible and infrared photodetection
Authors:
Aniello Pelella,
Alessandro Grillo,
Enver Faella,
Giuseppe Luongo,
Mohammad Bagher Askari,
Antonio Di Bartolomeo
Abstract:
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by $Si_3N_4$, produces a Gr-Si device in which the parallel MIS consists of…
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The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by $Si_3N_4$, produces a Gr-Si device in which the parallel MIS consists of a $Gr-Si_3N_4-Si$ structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to $10^4$. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height at zero bias, $φ_{b0}=0.24 eV$, the effective Richardson's constant, $A^*=7 \cdot 10^{-10} AK^{-2}cm^{-2}$, and the diode ideality factor n=2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity up to 350 mA/W and external quantum efficiency (EQE) up to 75% is achieved in the 500-1200 nm wavelength range. A decrease of responsivity to 0.4 mA/W and EQE to 0.03% is observed above 1200 nm, that is in the IR region beyond the silicon optical bandgap, in which photoexcitation is driven by graphene. Finally, a model based on two back-to-back diodes, one for the Gr-Si junction. the other for the $Gr-Si_3N_4-Si$ MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.
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Submitted 20 May, 2021;
originally announced May 2021.
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Field Emission Characterization of MoS2 Nanoflowers
Authors:
Filippo Giubileo,
Alessandro Grillo,
Maurizio Passacantando,
Francesca Urban,
Laura Iemmo,
Giuseppe Luongo,
Aniello Pelella,
Melanie Loveridge,
Luca Lozzi,
Antonio Di Bartolomeo
Abstract:
Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down…
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Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down to 1-100um2. We demonstrate that MoS2 nanoflowers can be competitive with other well-established field emitters. Indeed, we show that a stable field emission current can be measured with a turn-on field as low as 12 V um-1 and a field enhancement factor up to 880 at 600nm cathode-anode separation distance.
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Submitted 18 June, 2019;
originally announced June 2019.
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A WSe2 vertical field emission transistor
Authors:
Antonio Di Bartolomeo,
Francesca Urban,
Maurizio Passacantando,
Niall McEvoy,
Lisanne Peters,
Laura Iemmo,
Giuseppe Luongo,
Francesco Romeo,
Filippo Giubileo
Abstract:
We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Sch…
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We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ~100 V μm^(-1) and exhibit good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics.
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Submitted 18 August, 2018; v1 submitted 6 August, 2018;
originally announced August 2018.
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Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
Authors:
Antonio Di Bartolomeo,
Alessandro Grillo,
Francesca Urban,
Laura Iemmo,
Filippo Giubileo,
Giuseppe Luongo,
Giampiero Amato,
Luca Croin,
Linfeng Sun,
Shi-Jun Liang,
Lay Kee Ang
Abstract:
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to…
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We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky-barrier limited injection at the grounded junction. The device achieves a photo responsivity greater than 2.5 AW-1 under 5 mWcm-2 white-LED light. By comparing two- and four-probe measurements, we demonstrate that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS2 channel rather than effects of the Ti/MoS2 interface.
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Submitted 6 August, 2018;
originally announced August 2018.
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Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
Authors:
Filippo Giubileo,
Laura Iemmo,
Maurizio Passacantando,
Francesca Urban,
Giuseppe Luongo,
Lingfeng Sun,
Giampiero Amato,
Emanuele Enrico,
Antonio Di Bartolomeo
Abstract:
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapp…
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Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of about 20 V/um with a field enhancement factor of about 500 at anode-cathode distance of 1.5um, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications.
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Submitted 3 August, 2018;
originally announced August 2018.
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Graphene-Silicon Schottky diodes for photodetection
Authors:
Antonio Di Bartolomeo,
Giuseppe Luongo,
Laura Iemmo,
Filippo Giubileo
Abstract:
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the interna…
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We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused by the enhanced field on the nanotips.
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Submitted 27 October, 2017;
originally announced October 2017.
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Field emission from self-catalyzed GaAs nanowires
Authors:
Filippo Giubileo,
Antonio Di Bartolomeo,
Laura Iemmo,
Giuseppe Luongo,
Maurizio Passacantando,
Eero Koivusalo,
Teemu V. Hakkarainen,
Mircea Guina
Abstract:
We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field…
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We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field enhancement factor $β$ up to 112 at anode-cathode distance d=350 nm. A linear dependence of $β$ on the anode-cathode distance is experimentally found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allows detection of field emission from the nanowire sidewalls, which occurs with reduced field enhancement factor and stability. This study further extends the GaAs technology to vacuum electronics applications.
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Submitted 14 September, 2017;
originally announced September 2017.
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Graphene enhanced field emission from InP nanocrystals
Authors:
L. Iemmo,
A. Di Bartolomeo,
F. Giubileo,
G. Luongo,
M. Passacantando,
G. Niu,
F. Hatami,
O. Skibitzki,
T. Schroeder
Abstract:
We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find t…
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We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.
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Submitted 6 August, 2017;
originally announced August 2017.
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Hysteresis in the transfer characteristics of MoS2 transistors
Authors:
Antonio Di Bartolomeo,
Luca Genovese,
Filippo Giubileo,
Laura Iemmo,
Giuseppe Luongo,
Tobias Foller,
Marika Schleberger
Abstract:
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-fac…
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We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trap** at the MoS2/SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trap**, play an important role, besides H2O and O2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.
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Submitted 3 August, 2017;
originally announced August 2017.
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Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors
Authors:
Antonio Di Bartolomeo,
Luca Genovese,
Tobias Foller,
Filippo Giubileo,
Giuseppe Luongo,
Luca Croin,
Shi-Jun Liang,
L. K. Ang,
Marika Schleberger
Abstract:
We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity a…
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We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10^4 s, due to photo-charge trap** at the MoS2/SiO2 interface and in MoS2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of 1.4 kΩ/μm, ON current as high as 1.25 nA/μm, 10^5 ON-OFF ratio, mobility of 1 cm^2/Vs and photoresponsivity R=1 A/W.
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Submitted 24 March, 2017;
originally announced March 2017.
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Transport and field emission properties of buckypapers obtained from aligned carbon nanotubes
Authors:
F. Giubileo,
L. Iemmo,
G. Luongo,
N. Martucciello,
M. Raimondo,
L. Guadagno,
M. Passacantando,
K. Lafdi,
A. Di Bartolomeo
Abstract:
We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature dependence of the conductance shows that transport is mostly due to thermal fluctuation induced tunneling, although to explain the whole temperature range from 4.2…
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We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature dependence of the conductance shows that transport is mostly due to thermal fluctuation induced tunneling, although to explain the whole temperature range from 4.2 K to 430 K a further linear contribution is necessary. The field emission properties are measured by means of a nanocontrolled metallic tip acting as collector electrode to access local information about buckypaper properties from areas as small as 1 um2. Emitted current up to 10-5A and turn-on field of about 140V/um are recorded. Long operation, stability and robustness of emitters have been probed by field emission intensity monitoring for more than 12 hours at pressure of 10-6 mbar. Finally, no tuning of the emitted current was observed for in plane applied currents in the buckypaper.
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Submitted 26 January, 2017;
originally announced January 2017.
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Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
Authors:
Antonio Di Bartolomeo,
Giuseppe Luongo,
Filippo Giubileo,
Nicola Funicello,
Gang Niu,
Thomas Schroeder,
Marco Lisker,
Grzegorz Lupina
Abstract:
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW^(-1) and a normalized detectivity higher than 3.5 10^12 cmHz^(1/2) W^(-1) in the visible range. The device…
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We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW^(-1) and a normalized detectivity higher than 3.5 10^12 cmHz^(1/2) W^(-1) in the visible range. The device exhibits a photocurrent exceeding the forward current, because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. At room temperature, we measure a zero-bias Schottky barrier height of 0.52 eV, as well as an effective Richardson constant A**=4 10^(-5) Acm^(-2) K^(-2) and an ideality factor n=3.6, explained by a thin (< 1nm) oxide layer at the Gr/Si interface.
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Submitted 23 January, 2017;
originally announced January 2017.
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Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
Authors:
Antonio Di Bartolomeo,
Filippo Giubileo,
Giuseppe Luongo,
Laura Iemmo,
Nadia Martucciello,
Gang Niu,
Mirko Fraschke,
Oliver Skibitzki,
Thomas Schroeder,
Grzegorz Lupina
Abstract:
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor ga…
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We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.
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Submitted 22 July, 2016;
originally announced July 2016.
