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Thermal conductivity for p-(Bi, Sb)$_{2}$Te$_{3}$ films of topological insulators
Authors:
L N Lukyanova,
Yu A Boikov,
O A Usov,
V A Danilov,
I V Makarenko,
V N Petrov
Abstract:
The temperature dependences of the total, crystal lattice and electronic thermal conductivities were investigated in films of topological insulators p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ and p-Bi$_{2}$Te$_{3}$ formed by discrete and thermal evaporation methods. The largest decrease in the lattice thermal conductivity owing to the scattering of long-wavelength phonons on the grain interfaces was observed…
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The temperature dependences of the total, crystal lattice and electronic thermal conductivities were investigated in films of topological insulators p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ and p-Bi$_{2}$Te$_{3}$ formed by discrete and thermal evaporation methods. The largest decrease in the lattice thermal conductivity owing to the scattering of long-wavelength phonons on the grain interfaces was observed in the films of solid solutions p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ deposited by discrete evaporation on the amorphous substrates of polyimide without thermal treatment. It is shown that in the p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ films with low thermal conductivity the energy dependence of the relaxation time is enhanced, which is specific for the topological insulators. The electronic thermal conductivity was determined taking into account the effective scattering parameter in the relaxation time approximation versus energy in the Lorentz number calculations. The observed increase of the electronic thermal conductivity within the temperature range of 40 - 80 K is related to the weakening of the electrical conductivity temperature dependence and is determined by the increase in the effective scattering parameter at low temperatures due to the effect of scattering on the point antisite and impurity defects. A correlation was established between the thermal conductivity and features of the morphology of the interlayer surface (0001) in the studied films.
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Submitted 10 July, 2022;
originally announced July 2022.
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Topological layered n-type thermoelectrics based on bismuth telluride solid solutions
Authors:
L. N. Lukyanova,
I. V. Makarenko,
O. A. Usov
Abstract:
In topological n-type thermoelectrics based on $Bi_{2}Te_{3}$ with atomic substitutions Bi $\rightarrow$ In, Te $\rightarrow$ Se, S, the morphology and the surface states of Dirac fermions on the interlayer (0001) surface of van der Waals were studied by scanning tunneling microscopy and spectroscopy (STM/STS) techniques. By the STM method, the dark and light spots on the surface were found, which…
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In topological n-type thermoelectrics based on $Bi_{2}Te_{3}$ with atomic substitutions Bi $\rightarrow$ In, Te $\rightarrow$ Se, S, the morphology and the surface states of Dirac fermions on the interlayer (0001) surface of van der Waals were studied by scanning tunneling microscopy and spectroscopy (STM/STS) techniques. By the STM method, the dark and light spots on the surface were found, which intensities depend on the composition and thermoelectric properties of solid solutions. The observed surface morphology features in the solid solutions are explained by distortions of surface electronic states originated by atomic substitutions, influence of do** impurity, and formation of structural defects. Fast Fourier transform (FFT) of the morphology STM images of the (0001) surface were used to obtain the interference patterns of the quasiparticles excitation caused by surface electrons scattering by defects. The Dirac point energy and its fluctuations, peak energies of surface defects, the positions of the valence and conduction band edges, and the energy gap were determined from an analysis of tunneling spectra. A correlation between the parameters of surface states of Dirac fermions and thermoelectric properties was found. Thus, a contribution of the fermions surface states increases with rise of the surface concentration in solid solutions with high power factor, and the largest concentration value was observed in the $Bi_{1.98}In_{0.02}Te_{2.85}Se_{0.15}$ composition. The dependences of Fermi energy on the wave vector for different solid solutions are described by a set of Dirac cone sections, which are close within the limits of the fluctuations of the Dirac point energy that explained by weak changes of the Fermi velocity in the compositions at studied atomic substitutions in the bismuth telluride sublattices.
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Submitted 20 May, 2020;
originally announced May 2020.
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Scanning tunneling spectroscopy of the surface states of Dirac fermions in thermoelectrics based on bismuth telluride
Authors:
L N Lukyanova,
I V Makarenko,
O A Usov,
P A Dementev
Abstract:
Morphology of the interlayer van der Waals surface and differential tunneling conductance in p-Bi2-xSbxTe3-ySey solid solutions were studied by scanning tunneling microscopy and spectroscopy in dependence on compositions. Topological characteristics of the Dirac fermion surface states were determined. It is shown that the thermoelectric power factor and the material parameter enhance with the shif…
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Morphology of the interlayer van der Waals surface and differential tunneling conductance in p-Bi2-xSbxTe3-ySey solid solutions were studied by scanning tunneling microscopy and spectroscopy in dependence on compositions. Topological characteristics of the Dirac fermion surface states were determined. It is shown that the thermoelectric power factor and the material parameter enhance with the shift of the Dirac point to the top of the valence band with increasing of atomic substitution in these thermoelectrics. Correlation between topological characteristics, power factor and material parameter was found. A growth contribution of the surface states is determined by an increase of the Fermi velocity for large atomic substitutions of Bi at x>1.5 and small substitutions in the Te sublattice (y=0.06). In compositions with smaller substitutions at x = (1-1.3) and y=(0.06-0.09), similar effect of the surface states is determined by raise of the surface concentration of charge carriers.
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Submitted 23 December, 2017;
originally announced December 2017.
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Quantum oscillations of magnetoresistance of the submicrometer thick bismuth telluride-based films
Authors:
L. N. Lukyanova,
Yu. A. Boikov,
V. A. Danilov,
O. A. Usov,
M. P. Volkov,
V. A. Kutasov
Abstract:
Hetero-epitaxial films based on bismuth telluride with excess of Te were grown by hat wall technique at the surface of the mica (muscovite). Galvanomagnetic properties of the thin films were measured, and quantum oscillations of the magnetoresistance were found at the temperatures below 10 K in the magnetic field from 6 to 14 T. From analysis of magnetoresistance oscillations the main surface stat…
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Hetero-epitaxial films based on bismuth telluride with excess of Te were grown by hat wall technique at the surface of the mica (muscovite). Galvanomagnetic properties of the thin films were measured, and quantum oscillations of the magnetoresistance were found at the temperatures below 10 K in the magnetic field from 6 to 14 T. From analysis of magnetoresistance oscillations the main surface state parameters of the films were determined. Expementally obtained Landau level index shift and its temperature dependence are consistent with Berry phase specific for topological Dirac surface states. The estimated parameters of electronic topological surface states of the bismuth telluride-based films are of special interest because of possible usage of them in micro generators and micro coolers, and also for other device applications.
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Submitted 30 November, 2014;
originally announced December 2014.
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Thermoelectric and galvanomagnetic properties of bismuth chalcogenide nanostructured hetero-epitaxial films
Authors:
L. N. Lukyanova,
Yu. A. Boikov,
V A Danilov,
O A Usov,
M P Volkov,
V. A. Kutasov
Abstract:
Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was normal to the substrate plane. Seebeck coefficient, electrical conductivity and magnetoresistivity tensor components were measured at various orientations of magneti…
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Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was normal to the substrate plane. Seebeck coefficient, electrical conductivity and magnetoresistivity tensor components were measured at various orientations of magnetic and electric fields in the temperature interval 77-300 K and magnetic field up to 14 T. Scattering mechanism of charge carriers in the films were studied using temperature dependences of the degeneracy parameter and the Seebeck coefficient in terms of a many-valley model of energy spectrum. Obtained results have shown that the effective scattering parameter is considerably differed from the value specific for an acoustic scattering of charge carriers in the weakly degenerate films due to an additional scattering of charge carriers on interface and interctystallite boundaries. These features of charge carrier scattering are supposed to affect electronic transport in the films and enhance figure of merit.
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Submitted 12 July, 2014;
originally announced July 2014.
