Showing 1–22 of 22 results for author: Luescher, S

A robust protocol for entropy measurement in mesoscopic circuits

Authors: Tim Child, Owen Sheekey, Silvia Lüscher, Saeed Fallahi, Geoffrey C. Gardner, Michael Manfra, Joshua Folk

Abstract: Previous measurements utilizing Maxwell relations to measure change in entropy, $S$, demonstrated remarkable accuracy of measuring the spin-1/2 entropy of electrons in a weakly coupled quantum dot. However, these previous measurements relied upon prior knowledge of the charge transition lineshape. This had the benefit of making the determination of entropy independent of measurement scaling, but a… ▽ More Previous measurements utilizing Maxwell relations to measure change in entropy, $S$, demonstrated remarkable accuracy of measuring the spin-1/2 entropy of electrons in a weakly coupled quantum dot. However, these previous measurements relied upon prior knowledge of the charge transition lineshape. This had the benefit of making the determination of entropy independent of measurement scaling, but at the cost of limiting the applicability of the approach to relatively simple systems. To measure entropy of more exotic mesoscopic systems, a new analysis technique can be employed; however, doing so requires precise knowledge of the measurement scaling. Here, we give details on the necessary improvements made to the original experimental approach and highlight some of the common challenges (along with strategies to overcome them) that other groups may face when attempting this type of measurement. △ Less

Submitted 27 October, 2021; originally announced October 2021.

Entropy measurement of a strongly coupled quantum dot

Authors: Tim Child, Owen Sheekey, Silvia Lüscher, Saeed Fallahi, Geoffrey C. Gardner, Michael Manfra, Andrew Mitchell, Eran Sela, Yaakov Kleeorin, Yigal Meir, Joshua Folk

Abstract: The spin 1/2 entropy of electrons trapped in a quantum dot has previously been measured with great accuracy, but the protocol used for that measurement is valid only within a restrictive set of conditions. Here, we demonstrate a novel entropy measurement protocol that is universal for arbitrary mesoscopic circuits and apply this new approach to measure the entropy of a quantum dot hybridized with… ▽ More The spin 1/2 entropy of electrons trapped in a quantum dot has previously been measured with great accuracy, but the protocol used for that measurement is valid only within a restrictive set of conditions. Here, we demonstrate a novel entropy measurement protocol that is universal for arbitrary mesoscopic circuits and apply this new approach to measure the entropy of a quantum dot hybridized with a reservoir, where Kondo correlations dominate spin physics. The experimental results match closely to numerical renormalization group (NRG) calculations for small and intermediate coupling. For the largest couplings investigated in this work, NRG predicts a suppression of spin entropy at the charge transition due to the formation of a Kondo singlet, but that suppression is not observed in the experiment. △ Less

Submitted 13 April, 2022; v1 submitted 27 October, 2021; originally announced October 2021.

Strongly correlated zero-bias anomaly in double quantum dot measurements

Authors: Rachel Wortis, Joshua Folk, Silvia Lüscher, Sylvia Luyben

Abstract: Experiments in doped transition metal oxides often show suppression in the single-particle density of states at the Fermi level, but disorder-induced zero-bias anomalies in strongly correlated systems remain poorly understood. Numerical studies of the Anderson-Hubbard model have identified a zero-bias anomaly that is unique to strongly correlated materials, with a width proportional to the intersi… ▽ More Experiments in doped transition metal oxides often show suppression in the single-particle density of states at the Fermi level, but disorder-induced zero-bias anomalies in strongly correlated systems remain poorly understood. Numerical studies of the Anderson-Hubbard model have identified a zero-bias anomaly that is unique to strongly correlated materials, with a width proportional to the intersite hop** amplitude t [S. Chiesa, P. B. Chakraborty, W. E. Pickett, and R. T. Scalettar, Phys. Rev. Lett. 101, 086401 (2008)]. In ensembles of two-site systems, a zero-bias anomaly with the same parameter dependence also occurs, suggesting a similar physical origin [R. Wortis and W. A. Atkinson, Phys. Rev. B 82, 073107 (2010)]. We describe how this kinetic-energy-driven zero-bias anomaly in ensembles of two-site systems may be seen in a mesoscopic realization based on double quantum dots. Moreover, the double-quantum-dot measurements provide access not only to the ensemble-average density of states but also to the details of the transitions which give rise to the zero-bias anomaly. △ Less

Submitted 15 June, 2022; v1 submitted 28 September, 2021; originally announced September 2021.

Comments: 7 pages, 4 figures

Journal ref: Physical Review B 105, 245116 (2022)

Activation of magnetic moments in CVD-grown graphene by annealing

Authors: Hyungki Shin, Ebrahim Sajadi, Ali Khademi, Silvia Lüscher, Joshua A. Folk

Abstract: Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and be… ▽ More Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and below. This extra dephasing is apparently induced by local magnetic moments activated by the annealing process, and depends strongly on the backgate voltage applied. △ Less

Submitted 8 October, 2021; v1 submitted 6 July, 2021; originally announced July 2021.

Direct Entropy Measurement in a Mesoscopic Quantum System

Authors: Nikolaus Hartman, Christian Olsen, Silvia Lüscher, Mohammad Samani, Saeed Fallahi, Geoffrey C. Gardner, Michael Manfra, Joshua Folk

Abstract: The entropy of an electronic system offers important insights into the nature of its quantum mechanical ground state. This is particularly valuable in cases where the state is difficult to identify by conventional experimental probes, such as conductance. Traditionally, entropy measurements are based on bulk properties, such as heat capacity, that are easily observed in macroscopic samples but are… ▽ More The entropy of an electronic system offers important insights into the nature of its quantum mechanical ground state. This is particularly valuable in cases where the state is difficult to identify by conventional experimental probes, such as conductance. Traditionally, entropy measurements are based on bulk properties, such as heat capacity, that are easily observed in macroscopic samples but are unmeasurably small in systems that consist of only a few particles. In this work, we develop a mesoscopic circuit to directly measure the entropy of just a few electrons, and demonstrate its efficacy using the well understood spin statistics of the first, second, and third electron ground states in a GaAs quantum dot. The precision of this technique, quantifying the entropy of a single spin-$\frac{1}{2}$ to within 5\% of the expected value of $k_B \ln{2}$, shows its potential for probing more exotic systems. For example, entangled states or those with non-Abelian statistics could be clearly distinguished by their low-temperature entropy. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Journal ref: Nature Physics 14 1083-1086 (2018)

Detecting the universal fractional entropy of Majorana zero modes

Authors: Eran Sela, Yuval Oreg, Stephan Plugge, Nikolaus Hartman, Silvia Lüscher, Joshua Folk

Abstract: A pair of Majorana zero modes (MZMs) constitutes a nonlocal qubit whose entropy is $\log 2$. Upon strongly coupling one of the constituent MZMs to a reservoir with a continuous density of states, a universal entropy change of $\frac{1}{2}\log 2$ is expected to be observed across an intermediate temperature plateau. We adapt the entropy-measurement scheme that was the basis of a recent experiment [… ▽ More A pair of Majorana zero modes (MZMs) constitutes a nonlocal qubit whose entropy is $\log 2$. Upon strongly coupling one of the constituent MZMs to a reservoir with a continuous density of states, a universal entropy change of $\frac{1}{2}\log 2$ is expected to be observed across an intermediate temperature plateau. We adapt the entropy-measurement scheme that was the basis of a recent experiment [Hartman et. al., Nat. Phys. 14, 1083 (2018)] to the case of a proximitized topological system hosting MZMs, and propose a method to measure this $\frac{1}{2}\log 2$ entropy change --- an unambiguous signature of the nonlocal nature of the topological state. This approach offers an experimental strategy to distinguish MZMs from non-topological states. △ Less

Submitted 8 June, 2019; v1 submitted 29 May, 2019; originally announced May 2019.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. Lett. 123, 147702 (2019)

Gate-induced superconductivity in a monolayer topological insulator

Authors: Ebrahim Sajadi, Tauno Palomaki, Zaiyao Fei, Wen** Zhao, Philip Bement, Christian Olsen, Silvia Lüscher, Xiaodong Xu, Joshua A. Folk, David H. Cobden

Abstract: The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic do**, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a… ▽ More The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic do**, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a just a small gate voltage. This discovery offers new possibilities for gate-controlled devices combining superconductivity and topology, and could provide a basis for quantum information schemes based on topological protection. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: manuscript only

Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to $Δ_{5/2}$ and Impact of Density Fluctuations

Authors: Qi Qian, James R. Nakamura, Saeed Fallahi, Geoffrey C. Gardner, John D. Watson, Silvia Luscher, Joshua A. Folk, Gabor A. Csathy, Michael J. Manfra

Abstract: We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscilla… ▽ More We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method (cf. Coleridge, Phys. Rev. B \textbf{44}, 3793) for determination of quantum lifetime substantially underestimates $τ_q$ unless density inhomogeneity is explicitly considered; 2) $τ_q$ does not correlate well with quality as measured by $Δ_{5/2}$, the excitation gap of the fractional quantum Hall state at 5/2 filling. △ Less

Submitted 20 April, 2017; originally announced April 2017.

Comments: 12 pages, 4 figures

Journal ref: Phys. Rev. B 96, 035309 (2017)

Influence of impurity spin dynamics on quantum transport in epitaxial graphene

Authors: Samuel Lara-Avila, Sergey Kubatkin, Oleksiy Kashuba, Joshua A. Folk, Silvia Lüscher, Rositza Yakimova, T. J. B. M. Janssen, Alexander Tzalenchuk, Vladimir Fal'ko

Abstract: Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is cau… ▽ More Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is caused at least in part by spinful scatterers. A non-monotonic dependence of effective decoherence rate on $B_{\parallel}$ reveals the intricate role of scatterers' spin dynamics in forming the interference correction to conductivity, an effect that has gone unnoticed in earlier weak localisation studies △ Less

Submitted 14 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. Lett. 115, 106602 (2015)

Bias-induced breakdown of electron solids in the second Landau level

Authors: Alexander V. Rossokhaty, Silvia Lüscher, Joshua A. Folk, John D. Watson, Geoffrey C. Gardner, Michael J. Manfra

Abstract: Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. A comparison of RIQH breakdown characteristics at multiple voltage probes indi… ▽ More Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. A comparison of RIQH breakdown characteristics at multiple voltage probes indicates that these signatures can be ascribed to a phase boundary between broken-down and unbroken regions, spreading chirally from source and drain contacts as a function of bias current and passing voltage probes one by one. The chiral sense of the spreading is not set by the chirality of the edge state itself, instead depending on electron- or hole-like character of the RIQH state. △ Less

Submitted 27 May, 2016; v1 submitted 5 December, 2014; originally announced December 2014.

Low-temperature illumination and annealing of ultra-high quality quantum wells

Authors: Mohammad Samani, Alexander V. Rossokhaty, Ebrahim Sajadi, Silvia Lüscher, Joshua A. Folk, John D. Watson, Geoffrey C. Gardner, Michael J. Manfra

Abstract: The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dra… ▽ More The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state. △ Less

Submitted 17 August, 2014; originally announced August 2014.

Journal ref: Phys. Rev. B 90, 121405 (2014)

Gate voltage control over spin relaxation length

Authors: S. M. Frolov, W. W. Yu, S. Luescher, J. A. Folk, W. Wegscheider

Abstract: Spin currents in channels of a high mobility GaAs/AlGaAs two-dimensional electron gas are generated and detected using spin-polarized quantum point contacts. We have recently shown that the relaxation length of spin currents is resonantly suppressed when the frequency at which electrons bounce between channel walls matches the Larmor frequency. Here we demonstrate that a gate on top of the channel… ▽ More Spin currents in channels of a high mobility GaAs/AlGaAs two-dimensional electron gas are generated and detected using spin-polarized quantum point contacts. We have recently shown that the relaxation length of spin currents is resonantly suppressed when the frequency at which electrons bounce between channel walls matches the Larmor frequency. Here we demonstrate that a gate on top of the channel tunes such ballistic spin resonance by tuning the velocity of electrons and hence the bouncing frequency. These findings demonstrate a new mechanism for electrical control of spin logic circuits. △ Less

Submitted 15 August, 2012; originally announced August 2012.

Spin-orbit anisotropy measured using ballistic spin resonance

Authors: W. W. Yu, S. M. Frolov, S. Luescher, J. A. Folk, W. Wegscheider

Abstract: Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel orientation determines which momenta affect the relaxation process, so comparing relaxation for two orientations provides a direct determination of spin-orbit a… ▽ More Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel orientation determines which momenta affect the relaxation process, so comparing relaxation for two orientations provides a direct determination of spin-orbit anisotropy. Electrical measurements of pure spin currents are shown to reveal an order of magnitude stronger relaxation for channels fabricated along the [110] crystal axis in a GaAs electron gas compared to [-110] channels, believed to result from interference between structural and bulk inversion asymmetries. △ Less

Submitted 28 September, 2010; originally announced September 2010.

Numerical study of resonant spin relaxation in quasi-1D channels

Authors: S. Luescher, S. M. Frolov, J. A. Folk

Abstract: Recent experiments demonstrate that a ballistic version of spin resonance, mediated by spin-orbit interaction, can be induced in narrow channels of a high-mobility GaAs two-dimensional electron gas by matching the spin precession frequency with the frequency of bouncing trajectories in the channel. Contrary to the typical suppression of Dyakonov-Perel' spin relaxation in confined geometries, the… ▽ More Recent experiments demonstrate that a ballistic version of spin resonance, mediated by spin-orbit interaction, can be induced in narrow channels of a high-mobility GaAs two-dimensional electron gas by matching the spin precession frequency with the frequency of bouncing trajectories in the channel. Contrary to the typical suppression of Dyakonov-Perel' spin relaxation in confined geometries, the spin relaxation rate increases by orders of magnitude on resonance. Here, we present Monte Carlo simulations of this effect to explore the roles of varying degrees of disorder and strength of spin-orbit interaction. These simulations help to extract quantitative spin-orbit parameters from experimental measurements of ballistic spin resonance, and may guide the development of future spintronic devices. △ Less

Submitted 6 April, 2010; originally announced April 2010.

Ballistic Spin Resonance

Authors: S. M. Frolov, S. Luscher, W. Yu, Y. Ren, J. A. Folk, W. Wegscheider

Abstract: The phenomenon of spin resonance has had far reaching influence since its discovery nearly 70 years ago. Electron spin resonance (ESR) driven by high frequency magnetic fields has informed our understanding of quantum mechanics, and finds application in fields as diverse as medicine and quantum information. Spin resonance induced by high frequency electric fields, known as electric dipole spin r… ▽ More The phenomenon of spin resonance has had far reaching influence since its discovery nearly 70 years ago. Electron spin resonance (ESR) driven by high frequency magnetic fields has informed our understanding of quantum mechanics, and finds application in fields as diverse as medicine and quantum information. Spin resonance induced by high frequency electric fields, known as electric dipole spin resonance (EDSR), has also been demonstrated recently. EDSR is mediated by spin-orbit interaction (SOI), which couples the spin degree of freedom and the momentum vector. Here, we report the observation of a novel spin resonance due to SOI that does not require external driving fields. Ballistic spin resonance (BSR) is driven by an internal spin-orbit field that acts upon electrons bouncing at gigaHertz frequencies in narrow channels of ultra-clean two-dimensional electron gas (2DEG). BSR is manifested in electrical measurements of pure spin currents as a strong suppression of spin relaxation length when the motion of electrons is in resonance with spin precession. These findings point the way to gate-tunable coherent spin rotations in ballistic nanostructures without external a.c. fields. △ Less

Submitted 7 November, 2008; originally announced November 2008.

Comments: 24 pages, including supplementary materials

Journal ref: Nature 458 868 (2009)

Charge rearrangement and screening in a quantum point contact

Authors: Silvia Lüscher, Lindsay S. Moore, Tomaz Rejec, Yigal Meir, Hadas Shtrikman, David Goldhaber-Gordon

Abstract: Compressibility measurements, sensitive to charge rearrangements, are performed on a quantum point contact (QPC). Screening due to mobile charges in the QPC is quantitatively measured, using a second point contact to detect the screened electrical potential. These measurements are performed from pinch-off through the opening of the first few modes in the QPC. While the measured signal closely ma… ▽ More Compressibility measurements, sensitive to charge rearrangements, are performed on a quantum point contact (QPC). Screening due to mobile charges in the QPC is quantitatively measured, using a second point contact to detect the screened electrical potential. These measurements are performed from pinch-off through the opening of the first few modes in the QPC. While the measured signal closely matches a Thomas-Fermi-Poisson prediction, deviations from the classical behavior, in the form of additional dips, are apparent near the openings of the different modes, with the largest dip at the opening of the first mode. Density functional calculations attribute the first dip to exchange interactions. The other dips reflect the diverging density of states at the opening of each one-dimensional mode, which affects both kinetic and exchange contributions to the energy. △ Less

Submitted 24 June, 2007; v1 submitted 26 March, 2007; originally announced March 2007.

Comments: 6 pages, 5 figures. Published in PRL. Supplementary Information is included. Changes: Two references and journal reference added

Journal ref: Physical Review Letters 98, 196805 (2007)

Energy spectra of quantum rings

Authors: A. Fuhrer, S. Luescher, T. Ihn, T. Heinzel, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: Ring geometries have fascinated experimental and theoretical physicists over many years. Open rings connected to leads allow the observation of the Aharonov-Bohm effect, a paradigm of quantum mechanical phase coherence. The phase coherence of transport through a quantum dot embedded in one arm of an open ring has been demonstrated. The energy spectrum of closed rings has only recently been analy… ▽ More Ring geometries have fascinated experimental and theoretical physicists over many years. Open rings connected to leads allow the observation of the Aharonov-Bohm effect, a paradigm of quantum mechanical phase coherence. The phase coherence of transport through a quantum dot embedded in one arm of an open ring has been demonstrated. The energy spectrum of closed rings has only recently been analysed by optical experiments and is the basis for the prediction of persistent currents and related experiments. Here we report magnetotransport experiments on a ring-shaped semiconductor quantum dot in the Coulomb blockade regime. The measurements allow us to extract the discrete energy levels of a realistic ring, which are found to agree well with theoretical expectations. Such an agreement, so far only found for few-electron quantum dots, is here extended to a many-electron system. In a semiclassical language our results indicate that electron motion is governed by regular rather than chaotic motion, an unexplored regime in many-electron quantum dots. △ Less

Submitted 6 September, 2001; originally announced September 2001.

Comments: 10 pages, 4 figures

Journal ref: Nature 413, 822 (2001)

Transport properties of quantum dots with hard walls

Authors: A. Fuhrer, S. Luescher, T. Heinzel, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots' energy spectrum is reconstructed. W… ▽ More Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots' energy spectrum is reconstructed. We find that in small dots, the addition spectrum can qualitatively be described within a Fock-Darwin model. For a quantitative analysis, however, a hard-wall confinement has to be considered. In large dots, the energy level spectrum deviates even qualitatively from a Fock-Darwin model. The maximum wall steepness achieved is of the order of 0.4 meV/nm. △ Less

Submitted 22 September, 2000; originally announced September 2000.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 63, 125309 (2001)

Single hole transistor in a p-Si/SiGe quantum well

Authors: U. Doetsch, U. Gennser, T. Heinzel, S. Luescher, C. David, G. Dehlinger, D. Gruetzmacher, K. Ensslin

Abstract: A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates. Pronounced Coulomb blockade effects are observed at small coupling of the transistor island to source and drain. A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates. Pronounced Coulomb blockade effects are observed at small coupling of the transistor island to source and drain. △ Less

Submitted 22 September, 2000; v1 submitted 21 September, 2000; originally announced September 2000.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 78, 341 (2001)

Signatures of spin pairing in a quantum dot in the Coulomb blockade regime

Authors: S. Luescher, T. Heinzel, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: Coulomb blockade resonances are measured in a GaAs quantum dot in which both shape deformations and interactions are small. The parametric evolution of the Coulomb blockade peaks shows a pronounced pair correlation in both position and amplitude, which is interpreted as spin pairing. As a consequence, the nearest-neighbor distribution of peak spacings can be well approximated by a smeared bimoda… ▽ More Coulomb blockade resonances are measured in a GaAs quantum dot in which both shape deformations and interactions are small. The parametric evolution of the Coulomb blockade peaks shows a pronounced pair correlation in both position and amplitude, which is interpreted as spin pairing. As a consequence, the nearest-neighbor distribution of peak spacings can be well approximated by a smeared bimodal Wigner surmise, provided that interactions which go beyond the constant interaction model are taken into account. △ Less

Submitted 15 February, 2000; originally announced February 2000.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 86, 2114 (2001)

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

Authors: S. Luescher, A. Fuhrer, R. Held, T. Heinzel, K. Ensslin, W. Wegscheider

Abstract: A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional,… ▽ More A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, homogeneous top gate electrode. Pronounced Coulomb blockade oscillations are observed as a function of voltages applied to different gates. We find that, for positive top-gate voltages, the lithographic pattern is transferred with high accuracy to the electron gas. Furthermore, the dot shape does not change significantly when in-plane voltages are tuned. △ Less

Submitted 23 September, 1999; originally announced September 1999.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 75, 2452 (1999)

Shifting a Quantum Wire through a Disordered Crystal: Observation of Conductance Fluctuations in Real Space

Authors: T. Heinzel, G. Salis, R. Held, S. Luescher, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic temperature scale is a few hundred millikelvin, indicating a phase-coherent effect. Each fluctuation corresponds to a single scatterer entering or l… ▽ More A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic temperature scale is a few hundred millikelvin, indicating a phase-coherent effect. Each fluctuation corresponds to a single scatterer entering or leaving the wire. This way, scattering centers can be counted one by one. △ Less

Submitted 23 September, 1999; originally announced September 1999.

Comments: 4 pages, 3 figures

Journal ref: Physical Review B 61, R13353 (2000)