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Non-destructive tomographic nanoscale imaging of ferroelectric domain walls
Authors:
Jiali He,
Manuel Zahn,
Ivan N. Ushakov,
Leonie Richarz,
Ursula Ludacka,
Erik D. Roede,
Zewu Yan,
Edith Bourret,
István Kézsmárki,
Gustau Catalan,
Dennis Meier
Abstract:
Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroicity. A special type of polar interface are ferroelectric domain walls, where electronic reconstruction phenomena can be driven by bound charges. Great progress has been achieved in the characterization of such domain wal…
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Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroicity. A special type of polar interface are ferroelectric domain walls, where electronic reconstruction phenomena can be driven by bound charges. Great progress has been achieved in the characterization of such domain walls and, over the last decade, their potential for next-generation nanotechnology has become clear. Established tomography techniques, however, are either destructive or offer insufficient spatial resolution, creating a pressing demand for 3D imaging compatible with future fabrication processes. Here, we demonstrate non-destructive tomographic imaging of ferroelectric domain walls using secondary electrons. Utilizing conventional scanning electron microscopy (SEM), we reconstruct the position, orientation, and charge state of hidden domain walls at distances up to several hundreds of nanometers away from the surface. A mathematical model is derived that links the SEM intensity variations at the surface to the local domain wall properties, enabling non-destructive tomography with good noise tolerance on the timescale of seconds. Our SEM-based approach facilitates high-throughput screening of materials with functional domain walls and domain-wall-based devices, which is essential for monitoring during the production of device architectures and quality control in real-time.
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Submitted 31 October, 2023;
originally announced November 2023.
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Imaging and structure analysis of ferroelectric domains, domain walls, and vortices by scanning electron diffraction
Authors:
Ursula Ludacka,
Jiali He,
Shuyu Qin,
Manuel Zahn,
Emil Frang Christiansen,
Kasper A. Hunnestad,
Zewu Yan,
Edith Bourret,
István Kézsmárki,
Antonius T. J. van Helvoort,
Joshua Agar,
Dennis Meier
Abstract:
Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent chiral structures and symmetry-breaking distortions that underpin functional properties. Quantifying nanoscale structural features with statistical significanc…
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Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent chiral structures and symmetry-breaking distortions that underpin functional properties. Quantifying nanoscale structural features with statistical significance, however, is complicated by the subtleties of dynamic diffraction and coexisting contrast mechanisms, which often results in low signal-to-noise and the superposition of multiple signals that are challenging to deconvolute. Here we apply scanning electron diffraction to explore local polar distortions in the uniaxial ferroelectric Er(Mn,Ti)O$_3$. Using a custom-designed convolutional autoencoder with bespoke regularization, we demonstrate that subtle variations in the scattering signatures of ferroelectric domains, domain walls, and vortex textures can readily be disentangled with statistical significance and separated from extrinsic contributions due to, e.g., variations in specimen thickness or bending. The work demonstrates a pathway to quantitatively measure symmetry-breaking distortions across large areas, map** structural changes at interfaces and topological structures with nanoscale spatial resolution.
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Submitted 9 May, 2023;
originally announced May 2023.
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Moiré Fringes in Conductive Atomic Force Microscopy
Authors:
L. Richarz,
J. He,
U. Ludacka,
E. Bourret,
Z. Yan,
A. T. J. van Helvoort,
D. Meier
Abstract:
Moiré physics plays an important role for the characterization of functional materials and the engineering of physical properties in general, ranging from strain-driven transport phenomena to superconductivity. Here, we report the observation of moiré fringes in conductive atomic force microscopy (cAFM) scans gained on the model ferroelectric Er(Mn,Ti)O$_3$. By performing a systematic study of the…
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Moiré physics plays an important role for the characterization of functional materials and the engineering of physical properties in general, ranging from strain-driven transport phenomena to superconductivity. Here, we report the observation of moiré fringes in conductive atomic force microscopy (cAFM) scans gained on the model ferroelectric Er(Mn,Ti)O$_3$. By performing a systematic study of the impact of key experimental parameters on the emergent moiré fringes, such as scan angle and pixel density, we demonstrate that the observed fringes arise due to a superposition of the applied raster scanning and sample-intrinsic properties, classifying the measured modulation in conductance as a scanning moiré effect. Our findings are important for the investigation of local transport phenomena in moiré engineered materials by cAFM, providing a general guideline for distinguishing extrinsic from intrinsic moiré effects. Furthermore, the experiments provide a possible pathway for enhancing the sensitivity, pushing the resolution limit of local transport measurements by probing conductance variations at the spatial resolution limit via more long-ranged moiré patterns.
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Submitted 3 February, 2023;
originally announced February 2023.
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Perforating freestanding molybdenum disulfide monolayers with highly charged ions
Authors:
Roland Kozubek,
Mukesh Tripathi,
Mahdi Ghorbani-Asl,
Silvan Kretschmer,
Lukas Madauß,
Erik Pollmann,
Maria O'Brien,
Niall McEvoy,
Ursula Ludacka,
Toma Susi,
Georg S. Duesberg,
Richard A. Wilhelm,
Arkady V. Krasheninnikov,
Jani Kotakoski,
Marika Schleberger
Abstract:
Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to…
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Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm.
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Submitted 2 July, 2019;
originally announced July 2019.
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Substitutional Si impurities in monolayer hexagonal boron nitride
Authors:
Mohammad Reza Ahmadpour Monazam,
Ursula Ludacka,
Hannu-Pekka Komsa,
Jani Kotakoski
Abstract:
We report the first observation of substitutional silicon atoms in single-layer hexagonal boron nitride (h-BN) using aberration corrected scanning transmission electron microscopy (STEM). The medium angle annular dark field (MAADF) images reveal silicon atoms exclusively filling boron vacancies. This structure is stable enough under electron beam for repeated imaging. Density functional theory (DF…
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We report the first observation of substitutional silicon atoms in single-layer hexagonal boron nitride (h-BN) using aberration corrected scanning transmission electron microscopy (STEM). The medium angle annular dark field (MAADF) images reveal silicon atoms exclusively filling boron vacancies. This structure is stable enough under electron beam for repeated imaging. Density functional theory (DFT) is used to study the energetics, structure and properties of the experimentally observed structure. The formation energies of all possible charge states of the different silicon substitutions (Si$_\mathrm{B}$, Si$_\mathrm{N}$ and Si$_\mathrm{BN}$) are calculated. The results reveal Si$_\mathrm{B}^{+1}$ as the most stable substitutional configuration. In this case, silicon atom elevates by 0.66Å out of the lattice with unoccupied defect levels in the electronic band gap above the Fermi level. The formation energy shows a slightly exothermic process. Our results unequivocally show that heteroatoms can be incorporated into the h-BN lattice opening way for applications ranging from single-atom catalysis to atomically precise magnetic structures.
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Submitted 17 July, 2019; v1 submitted 4 April, 2019;
originally announced April 2019.
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Efficient first principles simulation of electron scattering factors for transmission electron microscopy
Authors:
Toma Susi,
Jacob Madsen,
Ursula Ludacka,
Jens Jørgen Mortensen,
Timothy J. Pennycook,
Zhongbo Lee,
Jani Kotakoski,
Ute Kaiser,
Jannik C. Meyer
Abstract:
Electron microscopy is a powerful tool for studying the properties of materials down to their atomic structure. In many cases, the quantitative interpretation of images requires simulations based on atomistic structure models. These typically use the independent atom approximation that neglects bonding effects, which may, however, be measurable and of physical interest. Since all electrons and the…
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Electron microscopy is a powerful tool for studying the properties of materials down to their atomic structure. In many cases, the quantitative interpretation of images requires simulations based on atomistic structure models. These typically use the independent atom approximation that neglects bonding effects, which may, however, be measurable and of physical interest. Since all electrons and the nuclear cores contribute to the scattering potential, simulations that go beyond this approximation have relied on computationally highly demanding all-electron calculations. Here, we describe a new method to generate ab initio electrostatic potentials when describing the core electrons by projector functions. Combined with an interface to quantitative image simulations, this implementation enables an easy and fast means to model electron microscopy images. We compare simulated transmission electron microscopy images and diffraction patterns to experimental data, showing an accuracy equivalent to earlier all-electron calculations at a much lower computational cost.
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Submitted 29 October, 2018; v1 submitted 14 March, 2018;
originally announced March 2018.
